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Aktuelle Publikationen


Ground-state resonant two-photon transitions in wurtzite GaN/AIN quantum dots
S.T. Jagsch, L. A.T. Greif, S. Reitzenstein, A. Schliwa
Phys. Rev. B 99 (24) (2019) 245303

Twofold gain enhancement by elongation of QDs in polarization preserving QD-SOAs
L. A.T. Greif, A. Mittelstädt, S. T. Jagsch, A. Schliwa
Semiconductor Science and Technology 34 (7) (2019) 075003

Nanometer scale cathodoluminescence of GaN quantum-dots on a wavelength-matched deep-UV distributed Bragg reflector
H. Schuermann, G. Schmidt, C. Berger, S. metzner, P. Veit, J. Bläsing, F. Bertram, A. Dadgar, A. Strittmatter, J. Christen, S. Kalinowski, G. Callsen, S. Jagsch, M. Wagner, A. Hoffmann
Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 109290A (4 March 2019)

Challenges for reliable internal quantum effieciency determination in AlGaN-based multi-quantum-well structures posed by carrier transport effects and morphology issues
C. Frankerl, M. P. Hoffmann, F. Nippert, H. Wang, C. Brandner, N. Tillner, H.-J. Lugauer, R. Zeisel, A. Hoffmann, M.J. Davies
Journal of Applied Physics 126 (7) (2019) 075703

Phonon dispersion in MoS2
H. Tornatzky, R. Gillen, Hiroshi Uchiyama, J. Maultzsch
Physical Review Review B 99 (2019) 144309

Quasi-phase-matched second harmonic generation for UV light using AIN waveguides
D. Alden, T. Troha, R. Kirste, S. Mita, Q. Guo, A. Hoffmann, M. Zgonik, R. Collazo, Z. Sitar
Applied Physics Letters, 114, 103504 (2019)

Resonance profiles of valley polarization in single-layer Mos2 and MoSe2
H. Tornatzky, A. Kaulitz, J. Maultzsch
Physical Review Letters 121 (2018) 167401

2017 - 2018

Resonance profiles of valley polarization in single-layer Mos2 and MoSe2
H. Tornatzky, A. Kaulitz, J. Maultzsch
Physical Review Letters 121 (2018) 167401

Strain Engineering in InP/(Zn,Cd)Se Core/Shell Quantum Dots
M. Rafipoor, D. Dupont, H. Tornatzky, M.D. Tessier, J. Maultzsch, Z. Hens, H. Lange
Chemistry of Materials 30 (13) (2018) 4393-4400

Suppression of the quantum-confined Stark effect in polar nitride heterostructures
S. Schlichting, G.M.O. Hönig, J. Müßener, P. Hille, T. Grieb, S. Westerkamp, J. Teubert, J. Schörmann, M.R. Wagner, A. Rosenauer, M. Eickhoff, A. Hoffmann, G. Callsen
Communications Physics 1 (2018) 48

Auger recombination in AlGaN quantum wells for UV light-emitting diodes
F. Nippert, M.T. Mazraehno, M. Davies, M.P. Hoffmann, H.-J. Lugauer, T. Kure, M. Kneissl, A. Hoffmann, M.R. Wagner
Applied Physics Letters 113 (2018) 071107

Synthesis and Characterization of Nanotubes from Misfit (LnS)1+yTaS2 (Ln=Pr, Sm, Gd, Yb) Compounds
M. Serra, D. Stolovas, L. Houben, R. Popovitz-Biro, I. Pinkas, F. Kampmann, J. Maultzsch, E. Joslevich, R. Tenne
Chemistry - A European Journal 24 (2018) 11354-11363

Double-resonant Raman-scattering with optical and acoustic phonons in carbon nanotubes
C. Tyborski, A. Vierck, R. Narula, V.N. Popov, J. Maultzsch
Physical Review B 97 (2018) 214306

Electronic excitations stabilized by a degenerate electron gas in semiconductors
C. Nenstiel, G. Callsen, F. Nippert, T. Kure, S. Schlichting, N. Jankowski, M.P. Hoffmann, A. Dadgar, S. Fritze, A. Krost, M.R. Wagner, A. Hoffmann, F. Bechstedt
Communications Physics 1 (2018) 38

Crystallisation behaviour of CH3NH3PbI3 films: The benefits of sub-second flash lamp annealing
R. Muydinov, S. Seeger, S.H.B.V.Kumar, C. Klimm, R. Kraehnert, M.R. Wagner, B. Szyszka
Thin Solid Films 653 (2018) 204-214

Point-Defect Nature of the Ultraviolet Absorption Band in AlN
D. Alden, J.S. Harris, Z. Bryan, J.N. Baker, P. Reddy, S. Mita, G. Callsen, A. Hoffmann, D.L. Irving, R. Collazo, Z. Sitar
Physical Review Applied 9 (5) (2018) 054036

Tunable quantum interference in bilayer graphene in double-resonant Raman scattering
F. Herziger, C. Tyborski, O. Ochedowski, M. Schleberger, J. Maultzsch
Carbon 133 (2018) 254-259

Correlation of the Carrier Decay Time and Barrier Thickness for Asymmetric Cubic GaN/Al0.64Ga0.26N Double Quantum Wells
T. Wecker, G. Callsen, A. Hoffmann, D. Reuter, DJ As
Physica Status Solidi B - Basic Solid State Physics 255 (5) (2018) 1700373

Optical Emission of GaN/AlN quantum-wires - the role of charge transfer from a nanowire template
j. Muessener, LAT Greif, S. Kalinowski, G. Callsen, P. Hille, J. Schormann, MR Wagner, A. Schliwa, S. Marti-Sanchez, J. Arbiol, A. Hoffmann, M. Eickhoff
Nanoscale 10 (12) (2018) 5591-5598

A quantum optical study of thresholdless lasing features in high-beta nitride nanobeam cavities
S. Jagsch, NV Trivino, F. Lohof, G. Callsen, S. Kalinowski, IM Rousseau, R. Barzel, JF Carlin, F. Jahnke, R. Butte, C. Gies, A. Hoffmann, N. Grandjean, S. Reitzenstein
Nature Communications 9 (2018) 564

Breakdown of Fal-Field Raman Selection Rules by Light-Plasmon Coupling Demonstrated by Tip-Enhanced Raman Scattering
E. Poliani, MR. Wagner, A. Vierck, F. Herziger, C. Nenstiel, F. Gannott, M. Schweiger, S. Fritze,, A. Dadgar, J. Zaumsei, A. Krost, A. Hoffmann, J. Maultzsch
Journal of Physical Chemical Letters 8 (22) (2017) 5462-5471

Carbon doped GaN layers grown by Pseudo-Halide Vapour Physe Epitaxy
D. Siche, R. Swierz, K. Kachel, N. Jankowski, C. Nenstiel, G. Callsen, M. Bickermann, A. Hoffmann
Crystal Research and Technology 52 (8) (2017) 1600364

Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements
I. Reklaitis, F. Nippert, R. Kudzma, T. Malinauskas, S. Karpov, I. Pietzonka, H.J. Lugauer, M. Strassburg, P. Vitta, R. Tomasiunas, A. Hoffmann
Journal of Applied Physics 121 (3) (2017) 035701
Charge state switching of Cu acceptors in ZnO nanorods
M.A. Rahman, MT Westerhausen, C. Nenstiel, S. Choi, A. Hoffmann, A. Gentle, MR. Phillips, C. Thon-That
Applied Physics Letters 110 (12) (2016), 121907

Influence of carbon doping and hydrogen co-doping on acceptor related optical transitions in ZnO nanowires

F. Mohammadbeigi, T. Kure, G. Callsen, ES Kumar, MR Wagner, A. Hoffmann, SP Watkins
Semiconductor Science and Technology 32 (4) (2017), 045017

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