TU Berlin

Workgroup Prof. Dr. D. Bimberg2001

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2001

865         V.M. Ustinov, A.E. Zhukov, N.A. Maleev, A.R. Kovsh, S.S. Mikhrin, B.V. Volovik, Yu.G. Musikhin, Yu.M. Shernyakov, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, J.A. Lott, D. Bimberg               1.3 µm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy J. Cryst. Growth 227-228, p. 1155 (2001)
866         I.L. Krestnikov, N.A. Maleev, A.V. Sakharov, A.R. Kovsh, A.E. Zhukov, A.F. Tsatsul'nikov, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, J.A. Lott               1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices Semicond. Sci. Technol. 16, p. 844 (2001)
867         A.V. Sakharov, I.L. Krestnikov, N.A. Maleev, A.R. Kovsh, A.E. Zhukov, A.F. Tsatsul'nikov, V.M. Ustinov, N.N . Ledentsov, D. Bimberg, J.A. Lott, Zh.I. Alferov               1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them Semiconductors 35, p. 854 (2001)
868         N.A. Maleev, A.V. Sakharov, C. Möller, I.L. Krestnikov, A.R. Kovsh, S.S. Mikhrin, A.E. Zhukov, V.M. Ustinov, W. Passenberg, E. Pawlowski, H. Künzel, A.F. Tsatsul'nikov, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov               1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots J. Cryst. Growth 227-228, p. 1146 (2001)
869         M. Strassburg, O. Schulz, U.W Pohl, D. Bimberg, s. Itoh, K. Nakano, A. Ishibashi, M. Klude, D. Hommel               A novel approach for improved green emitting II-VI lasers IEEE J. Selected Topics on Quantum Electronics 7, p. 371 (2001)
870         I.L. Krestnikov,  N.N. Ledentsov, A. Hoffmann,  D. Bimberg               Arrays of two-dimensional islands formed by submonolayer insertions: Growth, properties, devices (Review Article) phys. stat. sol. (a) 183, p. 207 (2001)
871         K. Goede, A. Weber, F. Guffarth, C.M.A. Kapteyn, F. Heinrichsdorff, D. Bimberg, M. Grundmann               Calorimetric investigation of intersublevel transitions in charged quantum dots Phys. Rev. B 64,  p. 245317-1 (2001)
872         R. Wetzler, C.M.A. Kapteyn, R. Heitz, A. Wacker, E. Schöll, D. Bimberg               Capacitance-voltage characteristics of self-organized InAs/GaAs quantum dots embedded in a pn diode phys. stat. sol. (b) 224,  p. 79 (2001)
873         V. Türck, S. Rodt, R. Heitz, O. Stier, M. Straßburg, U.W. Pohl, D. Bimberg               Charged excitons and biexcitons in self-organized CdSe quantum dots phys. stat. sol. (b) 224,  p. 217 (2001)
874         R.L. Sellin, Ch. Ribbat, M. Grundmann, N.N. Ledentsov, D. Bimberg               Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers Appl. Phys. Lett. 78, p. 1207 (2001)
875         P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg               Coherent versus incoherent dynamics in InAs quantum-dot active wave guides J. Appl. Phys. 89, p. 6542 (2001)
876         J.A. Lott, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg               Continous wave 1.3 mm InAs-InGaAs quantum dot VCSELS on GaAs substrates Digest of the LEOS Summer Topical Meetings ISBN 0-7803-7100-3, p. 137 (2001)
877         R.N. Pereira, W. Gehlhoff, N.A. Sobolev, A.J. Neves, D. Bimberg               Determination of the W8 and AB5 defect levels in the diamond gap J. Phys. Condens. Matter 13, p. 8957 (2001)
878         D. Söderström, S. Lourduloss, M. Wallnäs, A. Dadgar, O. Stenzel, D. Bimberg, H. Schumann               Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe J. Elec. Mat. 30, p. 972 (2001)
879         L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier,  R.A. Suris, D. Bimberg               Effect of excited-state transitions on the threshold characteristics of a quantum dot laser IEEE J. Quantum El. 37, p. 418 (2001)
880         G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, A. Hoffmann, D. Bimberg               Effective boundary conditions for planar QD structures Phys. Rev. B 64, p. 125326 (2001)
881         G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, N.N. Ledentsov, A. Hoffmann, D. Bimberg               Effective medium approach for planar QD stuctures Proc. The 9th Intern. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia, p. 331 (2001)
882         D. Söderström, S. Lourduloss, M. Wallnäs, A. Dadgar, O. Stenzel, D. Bimberg, H. Schumann               Electrical characterization of Ruthenium-Doped InP grown by low pressure hydride vapor phase epitaxy Electrochem. and Solid-State Lett. 4, p. G53 (2001)
883         F. Guffarth, R. Heitz, A. Schliwa, O. Stier, A.R. Kovsh,  V. Ustinov, N.N. Ledentsov, D. Bimberg               Electronic properties of InAs/GaAs quantum dots covered by an InxGa1-xAs quantum well phys. stat. sol. (b) 224, p. 61 (2001)
884         R. Heitz, I. Mukhametzhanov, O. Stier, A. Hoffmann, A. Madhukar, D. Bimberg               Electronic properties of InAs/GaAs quantum dots in: Physics and Applications of Semiconductor Quantum Structures, eds. j.-C. Woo and T. Yao (IOP Publishing, Bristol , p. Jan 20 (2001)
885         N.A. Sobolev, A. Cavaco, M.C. Carmo, M. Grundmann, F. Heinrichsdorff, D. Bimberg               Enhanced radiation hardness of InAs/GaAs quantum dot structures phys. stat. sol. (b) 224, p. 93 (2001)
886         Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg, N.A. Sobolev, M.C. Carmo               Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation Electr. Lett. 37, p. 174 (2001)
887         V.A. Shchukin, N.N. Ledentsov,  A. Hoffmann, D. Bimberg, I.P. Soshnikov, B.V. Volovik, V.M. Ustinov, D. Litvinov, D. Gerthsen               Entropy-driven effects in self-organized formation of quantum dots phys. stat. sol. (b) 224, p. 503 (2001)
888         R. Heitz, F. Guffarth, I. Mukhamethzahnov, O. Stier, A. Madhukar, D. Bimberg               Excited states of InAs/GaAs quantum dots phys. stat. sol. (b) 224, p. 367 (2001)
889         A. Schliwa, O. Stier, R. Heitz, M. Grundmann, D. Bimberg               Exciton level crossing in coupled InAs/GaAs quantum dot pairs phys. stat. sol. (b) 224, p. 405 (2001)
890         R. Heitz, F. Guffarth, O. Stier, A. Schliwa, A. Hoffmann, D. Bimberg               Existence of a phonon bottleneck for excitons in quantum dots Phys. Rev. B 64, p. 241305-1 (2001)
891         M.V. Maximov, L.V. Asryan, Yu.M. Shernyakov, A.F. Tsatsul'nikov, I.N. Kaiander, V.V. Nikolaev, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg               Gain and threshold characteristics of longwavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation IEEE J. Quantum Elec. 37, p. 676 (2001)
892         D. Huhse, O. Reimann, E.H. Böttcher, D. Bimberg               Generation of pico- and femtosecond-wavelength tunable optical pulses with self-seeded laser diodes Proc. of SPIE, Laser Optics 2000, St. Petersburg, Russia , p. 24 (2001)
893         P. Werner, N.D. Zakharov, R. Heitz, D. Bimberg, V.M. Ustinov, V.A. Egorov, B.V. Volovik, N.N. Ledentsov, G.E. Cirlin               Growth and characterization of InAs nanostructures in silicon emitting in the 1.3 µm region Proc. APF, Ed. N. Koguchi, Tsukuba, Japan 2001, p. 132 (2001)
894         R. Sellin, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, Zh.I. Alferov               Growth and optical characterization of long-wavelength quantum dots for low-threshold current current lasers Proc. 6th Intern. Symp. on Advanced Physical Fields, Tsukuba, Japan , p. 49 (2001)
895         Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg               High power quantum dot lasers at 1160 nm phys. stat. sol. (b) 224, p. 819 (2001)
896         N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, D. Bimberg, J.A. Lott, Zh.I. Alferov               High-power-wavelength lasers using GaAs-based quantum dots Proc. SPIE’s Intern. Symp. Optoelectronics 2001 (Photonic West), San Jose, USA 4287, p. 71-82 (2001)
897         C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter               Hole emission from Ge/Si quantum dots studied by time-resolved capacitance spectroscopy phys. stat. sol. (b) 224, p. 261 (2001)
898         M.V. Maximov, V.B. Volovik, C.M. Sotomayor Torres, E.M. Ramushina, V.I. Skopina, E.M. Tanklevskaya, S.A. Gurevich, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg               Impact of carrier lateral transport and surface recombination on PL efficiency of mesas with self-organized quantum dots phys. stat. sol (a) 188, p. 955 (2001)
899         N.A. Maleev,  I.L. Krestnikov, A.R. Kovsh,A.V. Sakharov, A.E. Zhukov, V.M. Ustinov, S.S. Mikhrin, W. Passenberg, E. Pawlowski, C. Möller, A.F. Tsatsul'nikov, H. Künzel, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg               InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 µm wavelength range phys. stat. sol (b) 224, p. 803 (2001)
900         V.N. Petrov, G.E. Tsyrlin, A.O. Golubok, N.I. Komyak, V.M. Ustinov, N.N . Ledentsov, Zh.I. Alferov, D. Bimberg               InAs/Si-based quantum-dot heterostructures for new-generation optoelectronic and microelectronic devices Russian Microelectronics 30, p. 99 (2001)
901         G.E. Cirlin, N.K. Polyakov, V.N . Petrov, V.A. Egorov, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg, N.D. Zakharov, P. Werner, U. Gösele               Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties Materials Science and Engineering B80, p. 108 (2001)
902         N.N. Ledentsov, D. Litvinov, A. Rosenauer, D. Gerthsen, I.P. Soshnikov, V.A. Shchukin, V.M. Ustinov, A.Yu. Egorov, A.E. Zukov, V.A. Volodin, M.D. Efremov, V.V. Preobrazhenskii, B.P. Semyagin, D. Bimberg, Zh.I. Alferov               Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surface J. Elec. Mat. 30, p. 463 (2001)
903         S. Bognár, M. Grundmann, O. Stier, D. Ouyang, C. Ribbat, R. Heitz, R. Sellin, D. Bimberg               Large modal gain of InAs/GaAs quantum dot lasers phys. stat. sol. (b) 224, p. 823 (2001)
904         M.V. Maximov, I.L. Krestnikov, A.G. Makarov, A.E. Zhukov, N.A. Maleev,  V.M. Ustinov, A.F. Tsatsul'niklov, Zh.I. Alferov, A.Yu. Chernyshov, N.N . Ledentsov, D. Bimberg, C.M. Sotomayor Torres               Large spectral splitting of TE and TM components and enhancement of the spontaneous emission rate of QDs in a microcavity phys. stat. sol. (b) 224, p. 811 (2001)
905         L. Müller-Kirsch, R. Heitz, A. Schliwa, O. Stier, D. Bimberg               Many-particle effects in type II quantum dots Appl. Phys. Lett. 78, p. 1418 (2001)
906         A. Strittmatter, L. Reißmann, D. Bimberg, H. Schröder, E. Obermeier, T. Riemann, J. Christen, A. Krost               Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111)substrates Appl. Phys. Lett. 78, p. 727 (2001)
907         L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier,  R.A. Suris, D. Bimberg               Maximum modal gain of self-assembled InAs/GaAs quantum-dot laser J. Appl. Phys. 90, p. 1666 (2001)
908         M. Grundmann, A. Weber, K. Goede, F. Heinrichsdorff, D. Bimberg, N.N. Ledentsov, P.S Kop'ev, Z.I. Alferov               Mid-infrared properties of quantum dot lasers Proc. SPIE, Photonics Technology in the 21st Century 4598, p. 44 (2001)
909         I.P. Soshnikov, N.N. Ledentsov, B.V. Volovik, A. Kovsh,  N.A. Maleev, S.S. Mikhrin,  O.M. Gorbenko, W. Passenberg, H. Kuenzel, N. Grote, V.M. Ustinov, H. Kirmse, W. Neumann, P. Werner, N.D. Zakharov, D. Bimberg, Zh.I. Alferov               Nitrogen-activated phase separation in InGaAsN/GaAs heterostructures grown by MBE Proc. The 9th Intern. Symp. Nanostructures: Physics and Technology, St. Petersburg, Russia , p. 82 (2001)
910         D. Bimberg, M. Grundmann, N.N . Ledentsov, M.H. Mao, Ch. Ribbat, R. Sellin, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, J.A. Lott               Novel infrared quantum dot lasers: Theory and reality phys. stat. sol. (b) 224, p. 787 (2001)
911         B.V. Volovik, A.R. Kovsh, W. Passenberg, H. Kuenzel, N. Grote, N.A. Cherkashin, Yu.G. Musikhin,  N.N. Ledentsov, D. Bimberg, V.M. Ustinov               Optical and structural properties of self-organized InGaAsN/GaAs nanostructures Semicond. Sci. Technol. 16, p. 186 (2001)
912         H.Y. Ryu, Y.H. Lee, R.L. Sellin, D. Bimberg               Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature Appl. Phys. Lett. 79, p. 3573 (2001)
913         R.N. Pereira, W. Gehlhoff, N.A. Sobolev, A.J. Neves, D. Bimberg               Photo-ERP studies on the AB3 and AB4 nickel-related defects in diamond Physica B 308-310, p. 589 (2001)
914         D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, Ch. Ribbat, R. Sellin, Zh.I. Alferov, P.S. Kop'ev, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, J.A. Lott               Quantum dot lasers: Theory and experiment AIP Conf. Proc. 560, p. 178 (2001)
915         N.N. Ledentsov, A. Hoffmann, I.L. Krestnikov, V.M. Ustinov, D. Bimberg, Zh.I. Alferov               Quantum dot semiconductor lasers Proc. of Commemorative Intern. Symp. for the 40th Anniversary of the Foundation of the Osaka Electro-Communication University 1/2, p. 57 (2001)
916         J.A. Lott, N.N. Ledentsov, V.M. Ustinov, D. Bimberg               Quantum dot vertical cavity lasers Digest of the LEOS Summer Topical Meetings ISBN 0-7803-7100-3, p. 17 (2001)
917         D. Bimberg               Quantum dots: Lasers and Amplifiers Buchbeitrag in: Compound Semiconductors 2001, eds. Arakawa, Hirayama, Kishino, Yamaguchi, IOP Publishing, Bristol and Philadelphia 170, p. 485 (2001)
918         A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kopev, Zh.I. Alferov               Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots phys. stat. sol. (b) 224, p. 833 (2001)
919         H. Born, L. Müller-Kirsch, R. Heitz, A. Hoffmann, D. Bimberg               Radiative recombination in type II GaSb/GaAs quantum dots phys. stat. sol (b) 228, p. R4 (2001)
920         N.D. Zakharov, P. Werner, U. Gösele, N.N. Ledentsov, D. Bimberg, N.A. Cherkashin, N.A. Bert, B.V. Volovik, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.F. Tsatsulnikov               Reduction of defect density in structures with InAs-GaAs quantum dots grown at low temperature for 1.55 µm range Mat. Res. Soc. Symp. 672, p. O8.5.1 (2001)
921         N.N. Ledentsov, V.A. Shchukin, R. Heitz, D. Bimberg, V.M. Ustinov, N.A. Cherkashin, A.R. Kovsh, Yu.G. Musikhin, B.V. Volovik, A.E. Zhukov, G.E. Cirlin, Zh.I. Alferov               Reversibility of the island shape, volume and density in Stranski-Krastanow growth Semicond. Sci. Technol. 16, p. 502 (2001)
922         M. Zafar Iqbal, A. Majid, S. Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar, D. Bimberg               Rhodium-related deep levels in n-type MOCVD GaAs Physica B 308-310, p. 816 (2001)
923         M. Meixner, E. Schöll, V.A. Shchukin, D. Bimberg               Self-assembled quantum dots: Crossover from kinetically controlled to thermodynamically limited growth Phys. Rev. Lett. 87, p. 236101-1 (2001)
924         S.A. Maksimenko, G.Ya. Slepyan, V.P. Kalosha, N.N. Ledentsov, A. Hoffmann, D. Bimberg               Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays Materials Science and Engineering B82, p. 215 (2001)
925         P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg               Spectral hole-burning and carrier-heating dynamics in quantum dot amplifiers: Comparison with bulk amplifiers phys. stat. sol. (b) 224, p. 419 (2001)
926         V.A. Shchukin, N.N. Ledentsov, D. Bimberg               Spontaneous formation of nanostructures on crystal surfaces Physica E 9, p. 140 (2001)
927         O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg               Stability of biexcitons in pyramidal InAs/GaAs quantum dots phys. stat. sol. (b) 224, p. 115 (2001)
928         L. Müller-Kirsch, A. Schliwa, O. Stier, R. Heitz, H. Kirmse, W. Neumann, D. Bimberg               State filling in type II quantum dots phys. stat. sol. (b) 224, p. 349 (2001)
929         F. Guffarth, R. Heitz, A. Schliwa, O. Stier, N.N. Ledentsov, A.R. Kovsh, V.M. Ustinov,  D. Bimberg               Strain engineering of self-organized InAs quantum dots Phys. Rev. B 64, p. 85305 (2001)
930         H. Kirmse, I. Häusler, R. Schneider, W. Neumann, L. Müller-Kirsch, D. Bimberg               Structural and chemical characterization of GaSb/GaAs quantum dot structures by TEM Proc. microscopy of semiconducting mat. XII, eds. A.G. Cullis, J.L. Hutchinson, IOP, Bristol, 2001 3, p. 13-16 (2001)
931         D. Soderstrom, S. Lourdudoss, M. Wallnass, A. Dadgar, O. Stenzel, D. Bimberg, H. Schumann               Studies on Ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy J. of The Electrochem. Soc. 148, p. G375 (2001)
932         H. Born, R. Heitz, A. Hoffmann, F. Guffarth, D. Bimberg               Suppressed relaxation in InGaAs/GaAs quantum dots phys. stat. sol. (b) 224, p. 487 (2001)
933         L. Müller-Kirsch, R. Heitz, U.W. Pohl, D. Bimberg, I. Häusler, H. Kirmse, W. Neumann               Temporal evolution of GaSb/GaAs quantum dot formation Appl. Phys. Lett. 79, p. 1027 (2001)
934         H.P. Wagner, R.H.-P. Tranitz,  R. Schuster, R. Engelhardt, U.W. Pohl, D. Bimberg               Thermal activation and phase relaxation of excitons in CdSe/ZnSSe quantum island structures phys. stat. sol. (b) 224, p. 195 (2001)
935         C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. Brunkov, B. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov               Time-resolved capacitance spectroscopy of hole and electron levels in InAsGaAs quantum dots phys. stat. sol. (b) 224, p. 57 (2001)
936         V. Türck, S. Rodt, R. Heitz, M. Strassburg, U.W. Pohl, D. Bimberg               Time-resolved spectroscopy of single quantum dots: evidence for phonon assisted carrier feeding phys. stat. sol. (b) 224, p. 643 (2001)
937         P. Borri, S. Schneider, W. Langbein, U. Woggon, A.E. Zhukov, V.M. Ustinov, N.N. Ledentsov, Zh.I. Alferov, D. Ouyang, D. Bimberg               Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near
1.3-µm-wavelength at room temperature
Appl. Phys. Lett. 79, p. 2633 (2001)
938         P. Borri, W. Langbein, S. Schneider, U. Woggon, R. Sellin, D. Ouyang, D. Bimberg               Ultralong dephasing time in InGaAs quantum dots Phys. Rev. Lett. 87, p. 157401-1 (2001)
939         D. Huhse, M. Kuntz, D. Bimberg               Wellenlängendurchstimmbare cw- und Puls-Halbleiterlaserquellen mit externen Glasfaserkavitäten für die Gasanalytik tm Technisches Messen 68, p. 380 (2001)

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