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1998 - 2000
553 Th. Engel, A. Strittmatter, W. Passenberg, E. Dröge, A. Umbach, W. Schlaak, R. Steingrüber, A. Seeger, G.G. Mekonnen, G. Unterbörsch, H.-G. Bach, E.H. Böttcher, D. Bimberg 38 GHz Narrow Band Photoreceiver OEIC with MSM Photodetector and HEMT Amplifier Proc. European Conference on Optical Communication ECOC‘98, <st1:place w:st="on"><st1:city w:st="on">Madrid</st1:city>, <st1:country-region w:st="on">Spain</st1:country-region></st1:place>, p. 63 (1998)
554 E. Dröge, E.H. Böttcher, D. Bimberg, O. Reimann, R. Steingrüber 70 GHz InGaAs metal-semiconductor-metal photodetectors for polarisation-insensitive operation Electron. Lett. 34, 1421 (1998)
555 E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, D. Bimberg, O. Reimann, R. Steingrüber 78 GHz distributed InGaAs MSM Photodetector Electron. Lett. 34, 2241 (1998)
556 O. Reimann, D. Huhse, E. Dröge, E.H. Böttcher, D.Bimberg, H.D. Stahlmann Advanced Semiconductor Laser Based Electro-Optical Sampling System Using SolitonPulse Compression for Direct Probing at 1.55-µm Wavelength Proc. LEOS ´98, Orlando 1, p. 215 (1998)
557 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop’ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott Application of self-organized quantum dots to edge emitting and vertical cavity lasers Physica E 3, 129 (1998)
558 St. Kollakowski, Ch. Lemm, E. H. Böttcher, D. Bimberg Buried InAlGaAs/InP waveguides – etching, overgrowth, and characterization IEEE Photon. Technol. Lett. 10, 114 (1998)
559 F. Hatami, M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov Carrier dynamics in type-II GaSb/GaAs qantum dots Phys. Rev. B 57, 4635 (1998)
560 M. Grundmann, R. Heitz, D. Bimberg Carrier statistics in quantum dot lasers Physics of the <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> 40, 772 (1998)
561 A. Khan, M.Z. Iqbal, U.S. Qurashi, M. Yamaguchi, N. Zafar, A. Dadgar, D. Bimberg Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition Jpn. J. Appl. Phys. 37, 4595 (1998)
562 R. Schneider, H. Kirmse, W. Neumann, M. Kappelt, F. Heinrichsdorff, A. Krost, D. Bimberg Characterization of III-V quantum structures by EFTEM Electron Microscopy III, 429 (1998)
563 A. Strittmatter, A. Krost, K. Schatke, D. Bimberg, J. Bläsing, J. Christen Comparison between <st1:place w:st="on"><st1:city w:st="on">GaAs</st1:city>, <st1:state w:st="on">AlAs.</st1:state></st1:place> and AlN buffer layers for the growth of GaN layers on silicon substrates Proc.Intern. Conf. on Silicon Carbide, III-nitrides and Related Materials, Stockholm, Sweden, p. 1145 (1998)
564 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott Competitive vertical cavity and edge emitting quantum dot lasers Proc. Conf. on Lasers and Electro-Optics Europe, CLEO <st1:place w:st="on">EUROPE</st1:place>, 14-18 Sep, p. 63 (1998)
565 V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, D. Bimberg Correlation of InGaAs/GaAs quantum dot and wetting layer formation Appl. Surf. Sci. 123/124, 352 (1998)
566 Th. Engel, G.G. Mekonnen, A. Umbach, V. Breuer, H.-G. Bach, E.H. Böttcher, D. Bimberg Design and modeling of narrow band InP-photoreceiver OEICs based on HEMTs and MSM photodetector Proc. 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits WOCSDICE ‘98, Zeuthen (1998)
567 Th. Engel, A. Strittmatter, W. Passenberg, A. Seeger, R. Steingrüber, G.G. Mekonnen, G. Unterbörsch, D. Bimberg Design, fabrication and characterizaiton of narrow band photoreceiver OEISs based on InP Proc. LEOS’98 Annual Meeting, <st1:place w:st="on"><st1:city w:st="on">Orlando</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 75 (1998)
568 Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, V.M. Ustinov, Zhao Zehn, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg Device characteristics and their anisotropy in high power quantum dots Techn. Phys. Lett. 24, 50 (1998)
569 M. Kuttler, M. Straßburg, U.W. Pohl, D. Bimberg Diffusion of Cd, Mg and S IN ZnSe-based quantum well structures Thin Solid Films 336, 208 (1998)
570 E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, O. Reimann, R. Steingrüber, A. Umbach, D. Bimberg Distributed Millimeter-Wave InGaAs Metal-Semiconductor-Metal Photodetector Technical Digest Intern. Topical Meeting on Microwave Photonics, MWP‘98, <st1:place w:st="on"><st1:city w:st="on">Princeton</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 173 (1998)
571 E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, O. Reimann, R. Steingrüber, A. Umbach, D. Bimberg Distributed MSM Photodetectors for the <st1:place w:st="on"><st1:placename w:st="on">Long-Wavelength</st1:placename> <st1:placetype w:st="on">Range</st1:placetype></st1:place> Proc. European Conference on Optical Communication ECOC‘98, <st1:place w:st="on"><st1:city w:st="on">Madrid</st1:city>, <st1:country-region w:st="on">Spain</st1:country-region></st1:place>, p. 57 (1998)
572 M. Straßburg, M. Kuttler, O. Stier, U.W. Pohl, D. Bimberg, M. Behringer, D. Hommel Doping dependent Mg diffusion in ZnMgSSe/ZnSSe-structures J. Crystal Growth 184/185, 465 (1998)
573 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott Edge and vertical cavity surface emitting InAs quantum dot lasers Solid-State Electronics 42, 1433 (1998)
574 A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maksimov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg Effect of the quantum-dot surface density in the active region on injection-laser characteristics Semiconductors 32, 997 (1998)
575 <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, V.P. Kalosha, N.N. Ledentsov, G.Ya. Slepyan, D. Bimberg Effective-medium approach for certain laser active media Proc. 7th Intern. Conf. on Complex Media Bianisotropics ‘98, A.F. Jacob and J. Reinert eds., Braunschweig, p. 81 (1998)
576 H. Nakashima, T. Kato, K. Maehashi, T. Nishida, Y. Inoue, T. Takeuchi, K. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE Mat. Sci. Eng. B51, 229 (1998)
577 M. Kuttler, M. Straßburg, V. Türck, R. Engelhardt, U.W. Pohl, D. Bimberg, M. Behringer, D. Hommel, J. Nürnberger, G. Landwehr Efficient lateral index guiding of II-VI laser structures by implantation-induced disordering J. Crystal Growth 184/185, 566 (1998)
578 M. Grundmann, O. Stier, D. Bimberg Electronic states in strained cleaved edge overgrowth quantum wires and quantum dots Phys. Rev. B 58, 10557 (1998)
579 A. Strittmatter, A. Krost, K. Schatke, D. Bimberg, J. Bläsing, J. Christen Epitaxial growth of GaN on silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AlN butter layers Proc.The Second Intern. Conf. on Nitride Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Tokushima</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 324 (1998)
580 R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg Excited states and energy relaxation in stacked InAs/GaAs quantum dots Phys. Rev. B 57, 9050 (1998)
581 G.F. Cirlin, V.N. Petrov, V.G. Dubrovski, S.A. Masalov, A.O. Golubok, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg abstract Fabrication of InAs quantum dots on silicon Tech. Phys. Lett. 24, 290 (1998)
582 D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers Proc. IEEE Intern. Conf. on Compound Semiconduct., <st1:city w:st="on"><st1:place w:st="on">San Diego</st1:place></st1:city>, 1997, p. 547 (1998)
583 O. Stier, V. Türck, M. Kappelt, D. Bimberg First observation of symmetry breaking in strained In0.7Ga0.3As/InP V-groove quantum wires Physica E 2, 969 (1998)
584 A.F. Tsatsul’nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Zhao Zhen, V.N. Petrov, G.E. Cirlin, D. Bimberg, P.S. Kop’ev, Zh.I. Alferov Formation of InAs quantum dots in a GaAs matrix by growth on vicinal substrates Semiconductors 32, 95 (1998)
585 A.F. Tsatsul'nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Chao Chen, P.S. Kop'ev, Zh.I. Alferov, V.N. Petrov, G.F. Cirlin, D. Bimberg abstract Formation of InAs Quantum dots in a GaAs matrix during growth on misoriented substrates Semiconductors å, 84 (1998)
586 G.E. Cirlin, V.G. Dubrovskii, V.N . Petrov, N.K. Polyakov, N.P. Korneevat, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.J. Komyak, V.M . Ustionov, A.Yu Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.E. Formation of InAs quantum dots on silicon (100) surface Semicond. Sci. Technol. 13, 1262 (1998)
587 A.F. Tsatsul'nikov, S.V. Ivanov, P.S. Kop’ev, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Meltser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik, M. Grundmann, D. Bimberg, Zh.I. Alferov Formation of InSb quantum dots in a GaSb matrix J. Electr. Mat 27, 414 (1998)
588 D. Bimberg, V.A. Shchukin, N.N. Ledentsov, A. Krost, F. Heinrichsdorff Formation of self-organized quantum dots at semiconductor surfaces Appl. Surf. Sci. 130-132, 713 (1998)
589 M. Straßburg, N.N. Ledentsov, A. Hoffmann, U.W. Pohl, D. Bimberg, I.L. Krestnikov,S.V. Ivanov, M.V. Maximov, S.V. Sorokin, P.S. Kop'ev, Zh.I. Alferov Gain studies and lasing in excitonic waveguides of II-VI submonolayer structures Physica E 2, 542 (1998)
590 M. Straßburg, V. Kutzer, U.W. Pohl, A. Hoffmann, I. Broser, N.N. Ledentsov, D. Bimberg, Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix Appl. Phys. Lett. 72, 942 (1998)
591 V. Kutzer, M. Straßburg, A. Hoffmann, I. Broser, U.W. Pohl, N.N. Ledentsov, D. Bimberg, S.V. Ivanov Gain to absorption conversion by increasing excitation density in excitonic waveguides J. Crystal Growth 184/185, 632 (1998)
592 D. Huhse, C. Warmuth, D. Bimberg, A.A. Sysoliatin, E.M. Dianov Generation of ultrashort (<500 fs) wavelength tunable laser pulses by self-seeding and adiabatic soliton compression Proc. CLEO/Europe ‘98, Glasgow, Paper CTu I 67, p. 102 (1998)
593 A. Dadgar, O. Stenzel, L. Koehne, A. Naeser, M. Straßburg, W. Stolz, D. Bimberg, H. Schumann Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition J. Cryst. Growth 195, 69 (1998)
594 D. Bimberg, M. Grundmann, N.N. Ledentsov Growth, spectroscopy, and laser application of self-ordered III-V quantum dots MRS Bulletin 23, 31 (1998)
595 M.v. Ortenberg, K. Uchida, N. Miura, F. Heinrichsdorff, D. Bimberg High magnetic fields probing nanostructures: Magneto-condensation into quantum dots Physica B 246/247, 88 (1998)
596 M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul’nikov, A.V. Lunev, A.V. Sakharov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop’ev, L.V. Asryan, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, P. Werner High power continuous wave operation of InGaAs/AlGaAs quantum dot laser J. Appl. Phys. 83, 5561 (1998)
597 A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, V. Türck, A. Krost, D. Bimberg High-gain excitonic lasing from a single InAs monolayer in bulk GaAs Appl. Phys. Lett. 72, 1433 (1998)
598 St. Kollakowski, E.H. Böttcher, A. Strittmatter, D. Bimberg High-speed InGaAs/InAlGaAs/InP waveguide-integrated MSM photodetector for the 1.3 – 1.55 µm wavelength range Electron. Lett. 34, 587 (1998)
599 R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov Hot carrier relaxation in InAs/GaAs quantum dots Physica E 2, 578 (1998)
600 G.E. Cirlin, V.G. Dubrovski, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, N.N. Ledentsov,Zh.I. Alferov, D. Bimberg InAs nanoscale islands on Si surface: a new type of quantum dots Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 249 (1998)
601 G.E. Cirlin, V.N. Petrov, V.G. Dubrovsky, S.A. Masalov, A.O. Golubok, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg InAs quantum dots on Si Techn. Phys. Lett. 24, 10 (1998)
602 M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott InAs/GaAs quantum dot injection lasers Workbook of the Topical Meeting on "Radiative Processes and Dephasing in Solids", Coeurd'Aline, <st1:state w:st="on"><st1:place w:st="on">Idaho</st1:place></st1:state>, Trends in Optics and Photonics OSA Series 18, 34 (1998)
603 M. Kappelt, V. Türck, D. Bimberg InAsxP1-x V-Groove quantum wires Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 587 (1998)
604 F. Heinrichsdorff, M. Grundmann, O. Stier, A. Krost, D. Bimberg Influence of In/Ga intermixing on the optical properties of InGaAs quantum dots J. Cryst. Growth 195, 540 (1998)
605 M. Kappelt, V. Türck, D. Bimberg, H. Kirmse, I. Hähnert, W. Neumann InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparation Proc. The Ninth Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), J. Cryst. Growth 195, 552 (1998)
606 A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, N.V. Lukovskaya, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg Injection laser based on composite InAlAs/InAs vertically coupled quantum dots in AlGaAs matrix Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 386 (1998)
607 A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, V. Türck, A. Krost, D. Bimberg Lasing and electronic properties of a single InAs monolayer embedded in bulklike GaAs Revista Mexicana de Fisica 44, 154 (1998)
608 B.V. Volovik, A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg abstract Lasing in Submonolayer InAs-AlGaAs structures without external optical confinement Tech. Phys. Lett. 24, 567 (1998)
609 M. Kuttler, M. Straßburg, U.W. Pohl, D. Bimberg Lateral index guiding in ZnCdSe quantum well lasers by selective implantation-induced disordering Appl. Phys. Lett. 73, 1865 (1998)
610 V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, N.N. Ledentsov, A.F. Tsatsul’nikov, B.V. Volovik, P.S. Kop’ev, Z.I. Alferov, S.S. Ruvimov, Z. Liliental-Weber, D. Bimberg Low threshold quantum dot injection laser emitting at 1.9 µm Electr. Lett. 34, 670 (1998)
611 D. Bimberg, M. Grundmann, R. Heitz Master equations for the micro-states description of carrier relaxation and recombination in quantum dots Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 1 (1998)
612 F. Heinrichsdorff, A. Krost, K. Schatke, D. Bimberg, A.O. Kosogov, P. Werner MOCVD growth and laser applications of In(Ga)As/GaAs quantum dots Proc. of the Electrochem. Soc. PV 98-2, Light Emitting Devices for Optoelectronic Applicatons and State-of-the-art program on compound semiconductors XXVIII, eds. H.Q. Hou, R.E. Sah, S.J. Pearton, F. Ren, K. Wada, ISBN 1-56677-194-3, p. 164 (1998)
613 U. Pohl, R. Engelhardt, V. Türck, D. Bimberg MOCVD of vertically stacked CdSe/ZnSSe quantum islands Proc. The Ninth Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), J. Cryst. Growth 195, 569 (1998)
614 L. Finger, M. Nishioka, M. Grundmann, R. Hogg, F. Heinrichsdorff, O. Stier, D. Bimberg, Y. Arakawa Modification of energy relaxation of InGaAs quantum dots by postgrowth thermal annealing Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 151 (1998)
615 Th. Engel, A., Strittmatter, W. Passenberg, A. Umbach, W. Schlaak, E. Dröge, A. Seeger, R. Steingrüber, G.G. Mekonnen, G. Unterbörsch, H.-G. Bach, E.H. Böttcher, D. Bimberg, Narrow-band photoreceiver OEIC on InP operating at 38 Ghz IEEE Photon. Technol. Lett. 10, 1298 (1998)
616 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg Neuartige Halbleiterlaser auf der Basis von Quantenpunkten Laser und Optoelektronik 30, 70 (1998)
617 M. Grundmann, R. Heitz, D. Bimberg New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck Physica E 2, 725 (1998)
618 Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, V.M. Ustinov, Zhao Zhen, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg abstract Operating characteristics and their anisotropy in high power laser (1.5 W, 300 K) with a quantum-dot active region Tech. Phys. Lett. 24, 351 (1998)
619 Zhao Zhen, M.V. Maximov, N.N. Ledentsov, A.E. Zhukov, V.M. Ustinov, A.Yu. Egorov, V.B. Volovik, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov, J. Böhrer, D. Bimberg Optical characteristics of InGaAs vertically-coupled quantum dots High Power Laser and Particle Beams 10, 43 (1998)
620 I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, S.V. Ivanov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, P.S. Kopev, Zh.I. Alferov, C.M. Sotomayor Torres Optical properties and lasing in CdSe-submonolayers in a (Zn,Mg)(S,Se) matrix phys. stat. sol. (a) 168, 309 (1998)
621 A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, M. Grundmann, D. Bimberg, Zh.I. Alferov Optical properties of InAlAs quantum dots in an AlGaAs matrix Appl. Surf. Sci. 123/124, 381 (1998)
622 J. Christen, T. Hempel, F. Bertram, N.N. Ledentsov, D. Bimberg, A.V. Sakharov, M.V. Maximov, A.S. Vsikov, W.V. Lundin, B.V. Pushnyi, Zh.I.Alferov Possible impact of surface morphology on stimulated emission in GaN-AlGaN double heterostructures Physica E 2, 557 (1998)
623 D. Bimberg, M. Grundmann, N.N. Ledentsov Quantum Dot Heterostructures John Wiley & Sons Ltd., <st1:place w:st="on">Chichester</st1:place>, GB ISBN 0471973882 (1998)
624 N.N. Ledentsov, V.M. Ustinov, A.V. Shchukin, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg Quantum dot heterostructures: fabrication, properties, lasers (Review) Semiconductors 32, 343 (1998)
625 D. Bimberg Quantum dot lasers – art and trends Proc. LEOS’98 Annual Meeting, <st1:place w:st="on"><st1:city w:st="on">Orlando</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> 1, p. 291 (1998)
626 N.N. Ledentsov, V.M. Ustinov, G.E. Cirlin, L.V. Vorob’ev, M. Grundmann, F. Heinrichsdorff, D. Bimberg, Zh.I. Alferov Quantum dot lasers - experimental results Proc. Advanced Research Workshop on Future Trends in Microelectronics: ‘Off the Beaten Path’, Ile des <st1:place w:st="on"><st1:city w:st="on">Embiez</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1998)
627 Th. Engel, E. Dröge, G. Unterbörsch, E.H. Böttcher, D. Bimberg Reactive matching of millimetre-wave photodetectors using coplanar waveguide technology Electron. Lett. 34, 1690 (1998)
628 A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg Resonant waveguiding and lasing in structures with InAs submonolayers in an AlGaAs matrix Proc. 6th Intern. Symp. on Nanostructures: 98 Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 382 (1998)
629 I.L. Krestnikov, S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, A. Rosenauer, D. Gerthsen, C.M. Sotomayor Torres, D. Bimberg, Zh.I. Alferov RT exciton waveguiding and lasing in submonolayer CdSe-(Zn, MG)(S, Se) structures Mat. Sci. Eng. B51, 26 (1998)
630 Krestnikov, M. Maximov, A.V. Sakharov, P.S. Kop'ev, Zh.I. Ålferov, N.N. Ledentsov, D. Bimberg, C.M. Sotomayor Torres RT Lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattice J. Crystal Growth 184/185, 545 (1998)
631 A. Dadgar, O. Stenzel, L. Köhne, A. Näser, M. Straßburg, W. Stolz, H. Schumann, D. Bimberg Ruthenium a new thermally stable compensator in InP Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 57 (1998)
632 A. Dadgar, O. Stenzel, A. Näser, M. Zafar Iqbal, D. Bimberg, H. Schmann Ruthenium: A superior compensator on InP Appl. Phys. Lett. 73, 3878 (1998)
633 F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, P. Werner Self organized defect free InAs/GaAs and InAs/InGaAs quantum dots with high lateral density grown on MOCVD Appl. Surf. Sci. 123/124, 725 (1998)
634 I.L. Krestnikov, A.V. Sakharov, N.N. Ledentsov, I.P. Soshnikov, Yu.G. Musikhin, A.R. Kovsh, V.M. Ustinov, I.V. Kochnev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg Self-assembled formation of quantum dots during InGaAlAs quantum well growth Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 257 (1998)
635 M. Grundmann, N.N. Ledentsov, N. Kirstaedter, F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov Semiconductor quantum dots for application in diode lasers Thin Solid Films 318, 83 (1998)
636 M. Behringer, K. Ohkawa, V. Großmann, H. Heinke, K. Leonardi, M. Fehrer, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes J. Crystal Growth 184/185, 580 (1998)
637 V.A. Shchukin, D. Bimberg Strain-driven self-organization of nanostructures on semiconductor surfaces Appl. Phys. Lett A 67, 687 (1998)
638 S. Ruvimov, Z. Lilienthal-Weber, J. Washburn, N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, P.S. Kop'ev, Zh.I. Alferov, D. Bimerg abstract Structural characterization of self-organized nanostructures Physics of the <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> 40, 781 (1998)
639 R. Engelhardt, V. Türck, U.W. Pohl, D. Bimberg, P. Veit Three-dimensionally confined excitons in MOCVD-grown ultrathin CdSe depositions in ZnSSe matrix J. Crystal Growth 184/185, 311 (1998)
640 V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov, D. Bimberg Vertical correlations and anti-correlations in multi-layered arrays of 2D quantum islands Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 253 (1998)
641 V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov, D. Bimberg Vertical correlations and anticorrelations in multi-sheet arrays of two-dimensional islands Phys. Rev. B 57, 12262 (1998)
642 I.L. Krestnikov, P.S. Kop’ev, Zh.I. Alferov, M. Straßburg, N.N. Ledentsov, A. Hoffmann, D. Bimberg, C.M. Sotomayor Torres Vertical coupling of quantum islands in the CdSe/ZnSe submonolayer superlattices Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 187 (1998)
643 St. Kollakowski, E. Dröge, E.H. Böttcher, A. Strittmatter, O. Reimann, D. Bimberg Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 µm Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 266 (1998)
644 I.L. Krestnikov, N.A. Maleev, M.V. Maximov, A.F. Tsatsul’nikov, A.E. Zhukov, A.R. Kovsh, I.V. Kochnev, N.M. Schmidt, N.N. Ledentsov, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg 1.06 and 1.3 µm resonant cavity.enhanced photodetectors based on InGaAs quantum dots Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 131 (1999)
645 A.F. Tsatsul’nikov, D.A. Bedarev, A.R. Kovsh, P.S. Kop’ev, N.N. Ledentsov, N.A. Maleev, Yu.G. Musikhin, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, D. Bimberg, P. Werner 1.3 µm emission from 2 ML InAs quantum dots in a GaAs matrix Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 139 (1999)
646 A.F. Tsatsul’nikov, N.A. Bedarev, A.R. Kovsh, P.S. Kop'ev, N.A. Maleev, Yu.G. Musikhin, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D. Bimberg 1.3 µm emission from quantum dots formed by 2 ML InAs deposition in a wide band gap (1.5-1.7 eV) InGaAlAs matrix Proc. 26th Intern. Symp. on Compound Semiconductors Inst. Phys. Conf. Ser. No 166, 261 (1999)
647 Yu.M. Shernyakov, D.A. Bedarev, E.Yu. Kondrat’eva, P.S. Kop’ev. A.R. Kovsh. N.A. Maleev, M.V. Maximov, S.S. Mikhrin, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov and D. Bimberg 1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition Electr. Lett. 35, 898 (1999)
648 V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.F. Tsatsul’nikov, P.S. Kop’ev, Zh.I. Alferov, I.P. Soshnikov, N. Zakharov, P. Werner, D. Bimberg 1.75 µm emission from self-organized InAs quantum dots on GaAs J. Crystal Growth 201/202, 1143 (1999)
649 A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, M.V. Maximov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg 3.3 W injection heterolaser based on self-organized quantum dots Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 128 (1999)
650 A.R. Kovsh, A.E. Zhukov, D.A. Livshits, A.Yu. Egorov, V.M: <st1:place w:st="on">Ustinov</st1:place>, M.V. Maximov, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg 3.5 CW operation of quantum dot laser Electronics Lett. 35, 1161 (1999)
651 A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, M.V. Maximov, A.F. Tsatsul'nikov, I.P. Soshnikov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg 3.9 W CW power from sub-monolayer quantum dot diode laser Electronics Lett. 35, 1845 (1999)
652 M. Grundmann, Ch. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, A.Yu. Egorov, D.A. Lifshits, M.V. Maximov, Yu.M. Shernyakov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov 4 Watt High Power Quantum Dot Lasers 41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
653 St. Kollakowski, A. Strittmatter, E. Dröge, E.H. Böttcher, D. Bimberg, O. Reimann, K. Janiak 65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3 – 1.55 µm wavelength regime Appl. Phys. Lett. 74, 612 (1999)
654 O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition J. Vac. Sci. Technol. B 17, 1639 (1999)
655 D. Bimberg, V. Türck Blaue Laserdioden Verfahrenstechnik Marktübersicht 2000, Sonderveröffentlichung der Zeitschrift Verfahrenstechnik 33, 20 (1999)
656 Martin Straßburg, A. Hoffmann, S. Rodt, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, S. Schwedthelm, D. Schikora Blue emission from Stranski-Krastanov CdSe quantum dots Proc. Intern. Workshop on Advances in growth and characterization of II-VI semiconductors. <st1:place w:st="on"><st1:city w:st="on">Würzburg</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place> (1999)
657 R. Heitz, D. Bimberg, M.-H. Mao, F. Heinrichsdorff, P. Borri, J. MØrk, W. Langbein, J.M. Hvam Carrier dynamics in quantum dots and quantum dot lasers The 6th International Workshop on Femtosecond Technology, <st1:place w:st="on"><st1:city w:st="on">Chiba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, 147 (1999)
658 A.S. Usikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, I.L. Krestnikov, M.V. Baidakova, Yu.G. Musikhin, V.V. Ratnikov, N.N. Ledentsov, Zh.I. Alferov, A. Hoffmann, D. Bimberg Characterization of the InGaN/GaN heterostructures grown by MOCVD in argon ambient Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 57 (1999)
659 D. Huhse, D. Bimberg Competing mode suppression ratio of electrically wavelength tunable self-seeded lasers IEEE Photon. Technol. Lett. 11, 167 (1999)
660 A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Yu.M. Shernyakov, S.S. Mikhrin, N.A. Maleev, E. Yu. Kondrat’eva, D.A. Livshits, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate IEEE Photon. Technol. Lett. 11, 1345 (1999)
661 I.L. Krestnikov, M. Straßburg, M. Caesar, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots Phys. Rev. B 60, 8695 (1999)
662 A.E. Zhukov, V.M. Ustinov, A.R. Kovsh. A.Yu. Egorov, N.A. Maleev, N.N. Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, Yu.G. Musikhin, N.A. Bert, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status Semicond. Sci. Technol. 14, 575 (1999)
663 H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots Appl. Phys. Lett 75, 106 (1999)
664 M.Z. Iqbal, U.S. Qurashi, A. Majid, A. Khan, N. Zafar, A. Dadgar, D. Bimberg Deep levels associated with alpha irradiation of n-type MOCVD InP Physica B 273, 839 (1999)
665 P. Borri, W. Langbein, J. Mørk, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg Dephasing in InAs/GaAs quantum dots Phys. Rev. B 60, 7784 (1999)
666 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov Diode lasers based on quantum dots in: Advances in <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Physics (Festkörperprobleme), ed. B. Kramer 38, 203 (1999)
667 A. Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg Direct evidence of In-enrichment in MOCVD-grown (In,Ga)As/GaAs quantum dots Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 171 (1999)
668 E.H. Böttcher, H. Pfitzenmaier, E. Dröge, St. Kollakowski, A. Strittmatter, D. Bimberg Distributed wave-guide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 79 (1999)
669 M.-H. Mao, F. Heinrichsdorff, D. Bimberg Dynamic properties of InGaAs quantum dot lasers Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 569 (1999)
670 G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, Y.B. Samsonenko, D.V. Denisov, V.M. Busov, B .V. Volovik, V.M. Ustinov, Z.I. Alferov, D. Bimberg, N.D. Zakharov, P. Werner Effect of growth conditions on InAs nanoislands formation on Si(100) surface Czechoslovak J. of Physics 49, 1547 (1999)
671 V.P. Kalosha, G.YA. <st1:place w:st="on"><st1:city w:st="on">Slepyan</st1:city>, <st1:country-region w:st="on">S.A.</st1:country-region></st1:place> Maksimeko, N.N. Ledentsov, O. Stier, M. Grundmann, D. Bimberg Effective-medium approach for active medium of QD laser Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
672 F. Heinrichsdorff, N. Zhakarov, P. Werner, A. Krost, D. Bimberg Electroluminescence of stacked In(Ga)As/GaAs QDs at 1.3 µm – 1.4 µm 41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
673 C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, M. Grundmann, D. Bimberg Electron emission from InAs quantum dots Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
674 C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N.D. Zakharov, D. Bimberg, P. Werner Electron escape from InAs quantum dots Phys. Rev. B 60, 14265 (1999)
675 O. Stier, M. Grundmann, D. Bimberg Electronic and optical properties of strained quantum dots modeled by 8-band-k•p theory Phys. Rev. B 59, 5688 (1999)
676 D. Bimberg, O. Stier, M. Grundmann, C. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov Electronic properties of self-organized quantum dots Workbook 12. Deutsch-Japanisches Forum Informationstechnologie, Dresden, Germany (1999)
677 O. Reimann, D. Huhse, E. Dröge, E.H. Böttcher, D. Bimberg, H.D. Stahlmann Electrooptical sampling using 1.55-µm self-seeded semiconductor laser with soliton pulse compression IEEE Photonics Techn. Lett. 11, 1024 (1999)
678 R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, D. Bimberg Enhanced polar exciton-LO-phonon interaction in quantum dots Phys. Rev. Lett. 83, 4654 (1999)
679 R. Heitz, I. Mukhametzhanov, J. Zeng, P. Chen, A. Madhukar, D. Bimberg Excitation transfer in novel self-organized quantum dot structures Superlattices and Microstructures 25, 97 (1999)
680 A.F.Tsatsul'nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg abstract Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host Semiconductors 33, 467 (1999)
681 J. L. Spithoven, J. Lorbacher, I. Manke, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots J. Vac. Sci. Technol. B 17, 1632 (1999)
682 A.F. Tsatsul’nikov, A.Yu Egrov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, N.A. Bert, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, A.O. Golubok, S.A. Masalov, V.N. Petrov, N.N. Ledentsov, R. Heitz, M. Grundmann, D. Bimberg, I.P. Soshnikov Formation of InAs quantum dots in a silicon matrix Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
683 A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N.Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov, V.I. Kopchatov, A.V. Lunev, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov Gain characteristics of quantum dot injection lasers Semicond. Sci. Technol. 14, 118 (1999)
684 A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N.Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov, A.V. Lunev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg abstract Gain characteristics of quantum-dot injection lasers Semiconductors 33, 1013 (1999)
685 D. Huhse, O. Reimann, E.H. Böttcher, D. Bimberg Generation of 290 fs laser pulses by self-seeding and soliton compression Appl. Phys. Lett. 75, 2530 (1999)
686 D. Huhse, C. Warmuth, M. Schulze, D. Bimberg Generation of short, wavelength tunable semiconductor laser pulses Proc. SPIE’s Intern. Symp. Optoelectronics 99 (Photonic West), <st1:place w:st="on"><st1:city w:st="on">San Jose</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
687 A..E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, E.Cu. Kondrat'eva, Yu.M. Shernyakov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg Ground and excited state lasing near 1.3-µm from self-assembled quantum dots on GaAs substrates Digest of the LEOS Summer Topical Meetings, p. 127 (1999)
688 A. Strittmatter, A. Krost, J. Bläsing, P. Veit, J. Christen, D. Bimberg Growth and characterization of MOCVD grown GaN layers on Si(111)substrates Proc. Mat. Res. Soc. Symp., Boston, USA (1999)
689 G.E. Cirlin, V.N . Petrov, V.G. Dubrovskii, Yu.B. Samsonenko, .K. Polyakov, A.O. Golubok, S.A. Masalov, N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kosvh, M.V. Maximov, A.F. Tsatsul'nikov, V.B. Volovik, A.E. Zhukov, P.S. Kop'ev, N.N. Ledentsov, Zh.I. Al abstract Heteroepitaxial growth of InAs on Si: a new type of quantum dot Semiconductors 33, 972 (1999)
690 V.M. Ustinov, A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, I.S. Tarasov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg High output power CW operation of a uantum dot laser Proc. 26th Intern. Symp. Compounds of Semiconductors, Inst. Phys. Conf. Ser. No 166, 277 (1999)
691 A. Strittmatter, A. Krost, J. Bläsing, D. Bimberg HIgh quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates phys. stat. sol. (a) 176, 611 (1999)
692 R. Heitz, I. Mukhametzhanov, H. Born, M. Grundmann, A. Hoffmann, A. Madhukar, D. Bimberg Hot carrier relaxation in InAs/GaAs quantum dots Physica B 272, 8 (1999)
693 G. Unterbörsch, Th. Engel, D. Rohde, M. Rohde, D. Bimberg, G. Grosskopf Hybrid and monolithic integrated optic/millimeter-wave converters for 60 GHz radio-over-fiber systems Optical Fiber Communication Conf, 1999, and the Intern. Conf. on Integrated Optics and Optical Fiber Communication OFC/IOOC'99, Technical Digest 1, 117 (1999)
694 Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg In enrichment in (In,Ga)As/GaAs Quantum Dots studied by high-resolution X-ray diffraction and pole figure analysis Appl. Phys. Lett. 75, 2957 (1999)
695 E.H. Böttcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg InAs/GaAs quantum dots: a material for very high-speed, long-wavelength photodetectors on GaAs Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 327 (1999)
696 V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, A.V. Lunev, B.V. Volovik, I.L. Krestnikov, Yu.G. Musikhin, N.A. Bert, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 µm Appl. Phys. Lett. 74, 2815 (1999)
697 A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudravtsev, N.N. Ledentsov, W.V. Lundin, M.V. Maximov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg Incorporation of As in GaN layers during MOCVD growth Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city> , p. 41 (1999)
698 N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg, V.P. Kalosha, J.A. Lott, A.O. Kosogov, P. Werner Influence of gain spectrum on cavity modes in quantum dot vertical cavity lasers Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
699 N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, V.M. Ustinov, I.L. Krestnikov, A.V. Lunev, A.V. Sakharov, B.V. Volovik, N.N. Ledentsov, P.S Kop'ev, Zh.I. Alferov, D. Bimberg abstract InGaAs/GaAs structures with quantum dots in vertical optical cavitites for wavelength near 1.3 µm Semiconductors 33, 586 (1999)
700 W. Schlaak, Th. Engel, A. Umbach, W. Passenberg, A. Seeger, R. Steingrüber, C. Schramm, G.G. ekonnen. G. Unterbörsch, H.G. Bach, D. Bimberg InP-based OEIC fabrication technology for 40 Gbit/s broadband and 38 / 60 GHz narrowband photoreceivers Proc. 26th Intern. Symp. on Compound Semiconductors Inst. Phys. Conf. Ser. No 166, 399 (1999)
701 O. Stier, M. Grundmann, D. Bimberg Inter- and intraband transitions in strained quantum dots modeled in eight-band k•p theory Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
702 N.N. Ledentsov, D. Bimberg, V.M. Ustinov, M.V. Maximov, Zh.I. Alferov, V.P. Kalosha, J.A. Lott Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser Semiconductor Science and Technology 14, 99 (1999)
703 N.N. Ledentsov, A.F. Tsatsul’nikov, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, I.L. Krestnikov, D. Bimberg, A. Hoffmann Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices Appl. Phys. Lett. 74, 161 (1999)
704 A.R. Kovsh, A,E, Zhukov, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov, M.V. Maksimov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, E.Yu. Kontrat’eva, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures Semiconductors 33, 929 (1999)
705 M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, I.N. Kaiander, N.N. Ledentsov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg Lasing from quantum dots formed by activated alloy spinodal decomposition on InAs stressors Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 135 (1999)
706 B.V. Volovik, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, I.E. Kozin, I.L. Krestnikov, M.V. Maximov, A.V. Sakharov, A.F. Tsatsul’nikov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, M. Strassburg, A. Hoffmann, D. Bimberg, I.P. Soshnikov, P. Werner Lasing in structures with InAs submonolayer insertions in an AlGaAs matrix without external optical confinement Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
707 B.V. Volovik, A.F. Tsatsul’nikov, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maksimov, N.A. Maleev, Yu.G. Musikhin, A.A. Suvorova, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg, P. Werner Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands Seminconductors 33, 901 (1999)
708 A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates Appl. Phys. Lett. 75, 1926 (1999)
709 O. Reimann, D. Huhse, E.H. Böttcher, D. Bimberg, H.D. Stahlmann Low jitter dual semiconductor laser system using electrical phase shift for fast temporal scanning in time-resolved pump and probe experiments Proc. CLEO, Pacific Rim '99 W13, 203 (1999)
710 A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, NN.A. Maleev, S.S. Mikhrin, Yu.M. Shernyakov, A.F. Tsatsul’nikov, M.V. Maximov, B.V. Volovik, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg Low threshold lasing in 1.3 µm range in the structure based on InAs/InGaAs quantum dots Proc. Intern. Symp. on Compound Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Berlin</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place> , Th A3.3 (1999)
711 Strittmatter, A. Krost, M. Straßburg, V. Türck, D. Bimberg, J. Bläsing, J. Christen Low-pressure metal organic chemical vapor depostion of GaN on silicon(111) substrates using an AlAs nucleation layer Appl. Phys. Lett. 74, 1242 (1999)
712 Strittmatter, A. Krost, V. Türck, M. Straßburg, D. Bimberg, J. Bläsing, T. Hempel, J. Christen, B. Neubauer, D. Gerthsen, T. Christmann, B.K. Meyer LP-MOCVD growth of GaN on silicon substrates – comparison between AlAs and ZnO nucleation layers Mat. Sci. Eng. B 59, 29 (1999)
713 M. v. Ortenberg, H. Wißmann, L. Parthier, K. Uchida, N. Miura, F. Heinrichsdorff, D. Bimberg Magneto condensation and probing of nanostructures by high magnetic fields Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
714 H. Born, A.R. Goni, R. Heitz, A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg Magnetoluminescence of annealed self-organized InGaAs/GaAs quantum dots phys. stat. sol. (b) 215, 313 (1999)
715 M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner Middle infrared emission from InAs quantum dots in a GaAs matrix Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
716 M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann Modeling of quantum dot optical properties using micro-states Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
717 A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov, B.V. Volovik, A.F. Tsatsul’nikov, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers J. Crystal Growth 201/202, 1117 (1999)
718 M. Straßburg, U.W. Pohl, D. Bimberg MOVPE-grown ZnMgCdSe structures on InP Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 115 (1999)
719 V. Türck, D. Bimberg Nanotechnology in optoelectronics: trends and prospects mst news, intern. newsletters on microsystems, 17 (1999)
720 Th. Engel, G. Unterbörsch, R. Hübsch, G.G. Mekonnen, D. Bimberg Noise and nonlinearity of monolithic 38 GHz photoreceiver for OPTIC/mm-wave conversion Proc. European Conference on Optical Communication, ECOC’99, Nice. <st1:country-region w:st="on"><st1:place w:st="on">France</st1:place></st1:country-region> (1999)
721 M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner Optical and structural properties of InAs quantum dots in a GaAs matrix for a sprectral range up to 1.7 µm Appl. Phys. Lett. 75, 2347 (1999)
722 P. Yu, W. Langbein, K. Leosson, J.M. Hvam, N.N. Ledentsov, D. Bimberg, V. M. Ustinov, A.Yu. Egorov, A.E. Zhukov Optical anisotropy in vertically coupled quantum dots Phys. Rev. B 60, 16680 (1999)
723 R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. Soshnikov, P. Werner, U. Gösele Optical properties of InAs quantum dots in a Si matrix Appl. Phys. Lett. 74, 1701 (1999)
724 A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Optical properties of structures with single and multiple InGaN insertions in a GaN matrix phys. stat. sol. (b) 216, 435 (1999)
725 M.V. Maximov, D.A. Bedarev, A.Yu Egorov, P.S. Kop’ev, A.R. Kovsh, A.V. Lunev, Yu.G. Musikhin, Yu.M. Shernyakov, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg Optimization of quantum dot lasers by seeding of quantum dots Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
726 L. Köhne, A. Dadgar, D. Bimberg, M. Zafar Iqbal, U.S. Qurashi, T. Grundemann,H. Schumann Osmium related deep levels in indium phosphide phys. stat. sol. (a) 171, 521 (1999)
727 I.L. Krestnikov, W.V. Lundin, A.V. Sakharov., V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N . Ledentsov, A. Hoffmann, D. Bimberg Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature phys. stat. sol. (b) 216, 511 (1999)
728 G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, J. Herrmann, N.N. Ledentsov, I.L. Krestnikov, Zh.I. Alferov, D. Bimberg Polarization splitting of the gain band in quantum wire and quantum dot arrays Phys. Rev. B59, 12275 (1999)
729 D. Bimberg QD lasers up to and beyond 1300 nm Digest of the LEOS Summer Topical Meetings, 17 (1999)
730 M. Grundmann, F. Heinrichsdorff, C. Ribbat, M.-H. Mao, D. Bimberg Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation Appl. Phys. B 69, 413 (1999)
731 M. Straßburg, R. Engelhardt, R. Heitz, U.W. Pohl, S. Rodt, V. Türck, A. Hoffmann, D. Bimberg, I.L. Krestnikov, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen Quantum dots formed by ultrathin CdSe-ZnSe insertions Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 13 (1999)
732 D. Bimberg Quantum dots: paradigm changes in semiconductor physics semiconductors 33, 951 (1999)
733 A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, I.S. Tarasov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg abstract Quantum-dot injection heterolaser with 3.3 W output power Tech. Phys. Lett. 25, 438 (1999)
734 G. Sek, J. Misiewicz, K. Ryczko, M. Kubisa, F. Heinrichsdorff, O. Stier, D. Bimberg Room temperature photoreflectance of MOCVD-grown InAs/GaAs quantum dots <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Communications 110, 657 (1999)
735 P. Borri, W. Langbein, J. Mork, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, D. Bimberg Room-temperature dephasing in InAs/GaAs quantum dots Proc. CLEO/QUELS’99, Baltimore Convention Center, Baltimore, USA, 46 (1999)
736 R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures J. Appl. Phys. 86, 5578 (1999)
737 I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser Appl. Phys. Lett. 75, 1192 (1999)
738 van Gelen, J.J.M. Binsma, T. van Dongen, A. van Leerdam, A. Dadgar, D. Bimberg, O. Stenzel, H. Schumann Ruthenium doped high power 1.48 µm SIPBH Laser Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 203 (1999)
739 V.A. Shchukin, D. Bimberg Self-ordering in multisheet arrays of 2D strained islands Thin Solid Films 357, 66 (1999)
740 A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, M.V. Maksimov, G.E. Cirlin, N.N. Ledentsov, D. Bimberg, P. Werner, Zh.I. Alferov Self-organized InAs quantum dots in a silicon matrix J. Cryst. Growth 201/202, 1202 (1999)
741 E. Martinet, M.-A. Dupertuis, E. Kapon, O. Stier, M. Grundmann, D. Bimberg Separation of Strain and Confinement Effects in the Photoluminescence Excitation Spectra of InGaAs/AlGaAs V-Groove Quantum Wires Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
742 M.V. Maximov, Yu.M. Shernyakov, I.N. Kaiander, D.A. Bedarev, E.Yu. Kondrat'eva, P.S. Kop’ev, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.F. Tsatsul'nikov, V.M. Ustionov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg Single transverse mode operation of long wavelength (~1.3 µm)InAsGaAs quantum dot laser Electronics Lett. 35, 2038 (1999)
743 D. Bhattacharyya, E.A. Avrutin, A.C. Bryce, J.M. Gray, J.H. Marsh, D. Bimberg, F. Heinrichsdorff, V.M. Ustinov, S.V. Zaitsev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, A.I. Onishchenko, E.P. O’Reilly Spectral and dynamic properties of InAs/GaAs self-organized quantum dot lasers IEEE J. Quantum El. 5, 648 (1999)
744 V.A. Shchukin, D. Bimberg Spontaneous ordering of nanostructures on crystal surfaces Rev. of Modern Physics 71, 1125 (1999)
745 N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg Structural studies of stacked InAs quantum dots in a Silicon matrix grown by MBE 41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
746 N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg Structure of InAs quantum dots in Si matrix investigated by high resolution electron microscopy Proc. 7th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> , p. 216 (1999)
747 N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg Structure of stacked InAs quantum dots in a Si matrix: HRTEM experimental results and modelling Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 216 (1999)
748 A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, N.N. Ledentsov, A.F. Tsatsul’nikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg Surface-mode lasing from optically pumped InGaN/GaN heterostructures Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 124 (1999)
749 A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Surface-mode lasing from stacked InGaN insertions in a GaN matrix Appl. Phys. Lett. 74, 3921 (1999)
750 Umbach, Th. Engel, H.-G. Bach, S. v. Waasen, E. Dröge, A. Strittmatter, W. Ebert, W. Passenberg, R. Steingrüber, W. Schlaak, G.G. Mekonnen, D. Bimberg, G. Unterbörsch Technology of InP-based 1.55 µm ultrafast OEMMICs: 40 Gbit/s broadband and 38 / 60 GHz narrow-band photoreceivers IEEE J. Quantum El. 35, 1024 (1999)
751 R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, D. Bimberg Temperature-dependent optical properties of self-organized InAs/GaAs quantum dots J. Elec. Mat. 28, 520 (1999)
752 H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy phys. stat. sol. (b) 215, 865 (1999)
753 M. Straßburg, R. Heitz, V. Türck, S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, L.L. Krestnikow, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices J. El. Mat. 28, 506 (1999)
754 P. Borri, W. Langbein, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, D. Bimberg Ultrafast dynamics in InAs/GaAs quantum dot amplifiers in: Conf. on Lasers and Electro-Optics, OSA Techn. Digest, Washington DC, USA, 321 (1999)
755 P. Borri, W. Langbein, J. Mørk, J.V. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg Ultrafast gain and index dynamics in InAs/InGaAs quantum dot amplifiers Proc. 25th European Conference on Optical Communication, ECOC’99, Techn. Digest, 74 (1999)
756 I.L. Krestnikov, M. Strassburg, M. Caesar, V.A. Shchukin, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, V.G. Malyshkin, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, Rosenauer, D. Gerthsen Vertical arrangement and wavefunction control in structures with 2d quantum dots Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>, p. 71 (1999)
757 A.Krost, F.Heinrichsdorff, D.Bimberg, J.Bläsing, A.A.Darhuber, G.Bauer X-ray analysis of self-organized InAs/InGaAs quantum dot structure Cryst. Res. Techn. 34, 89 (1999) 758 S.S. Mikhrin, A.E. Zhukov,. A.R. Kovsh, N.A. Maleev, V.M. Ustinov, Yu.M. Shernyakov, I.P. Soshnikov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov abstract 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots Semicond. Sci. Technol. 15, 1061 (2000)
759 N.N. Ledentsov, M.V. Maximov, D. Bimberg, T. Maka, C.M. Sotomayor Torres, I.V. Kochnev, I.L. Krestnikov, V.M. Lantratov, N.A. Cherkashin, Yu.M. Musikhin, Zh.I. Alferov 1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition Semicond. Sci. Technol. 15, 604 (2000)
760 A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, D.A. Livshits, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg 3.5 W continuous wave operation from quantum dot laser Mat. Scie. Eng. B 74, 70 (2000)
761 M. Strassburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude,. D. Hommel, S. Itoh, K. Nakano, A. Ishibashi A new approach to improved green emitting II-VI laser diodes Conf. Digest 17th Intern. Semiconductor Laser Conf., 25-28 Sep, p. 1053 (2000)
762 S.S. Mikhrin, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, V.M. Ustinov, Yu.M. Shernyakov, I.N. Kayander, E.Yu. Kondrat'eva, D.A. Livshits, U.S. Tarasov, M.V. Maksimov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov abstract A spatially single-mode laser for a range of 1.25 < 1.28 µm on the basis of InAs quantum dots on a GaAs substrate Semiconductors 34, 119 (2000)
763 O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg Biexciton binding energy in InAs/GaAs quantum dots - a local probe for the dot geometry Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1265 (2000)
764 D. Bimberg, N.N. Ledentsov Birth of quantum dot devices: Paradigm changes Semiconductor News 9, 37 (2000)
765 R. Wetzler, A. Wacker, E. Schöll, C.M.A. Kapteyn, R. Heitz, D. Bimberg Capacitance-voltage characteristics of self-organized InAs/GaAs quantum dots embedded in a pn structure Appl. Phys. Lett. 77, 1671 (2000)
766 R. Wetzler, C.M.A. Kapteyn, R. Heitz, A. Wacker, E. Schöll, D. Bimberg Capacitance-voltage characteristics of self-organized quantum dots embedded in a pn junction Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1093 (2000)
767 C.M.A. Kapteyn, M. Lion, F. Heinrichsdorff, R. Heitz, M. Grundmann, D. Bimberg Carrier Emission Processes in InAs Quantum Dots Physica E 7, 388 (2000)
768 C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. Brunkov, B. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov Carrier escape and level structure of InAs/GaAs quantum dots Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1045 (2000)
769 M.V. Maximov, A.F. Tsatsul'nikov, D.S. Sizov, Yu.M. Shernyakov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation Nanotechnology 11, 309 (2000)
770 U.W. Pohl, Matthias Straßburg, Martin Straßburg, I.L. Krestnikov, R. Engelhardt, S. Rodt, D. Bimberg CdSe/ZnSSe quantum islands grown by MOVPE on homoepitaxial GaAs buffers J. Cryst. Growth 214/215, 717 (2000)
771 V . Türck, S. Rodt, R. Heitz, O. Stier, M. Straßburg, U.W. Pohl, D. Bimberg Charged excitons and biexcitons in self-organized CdSe quantum dots Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1369 (2000)
772 M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, D. Schikora Coexistence of Planar and Three-dimensional Quantum Dots in CdSe/ZnSe Structures Appl. Phys. Lett. 76, 685 (2000)
773 P. Borri, W. Langbein, J.M. Hvam, D. Bimberg Coherent versus incoherent dynamics in InAs quantum dots: The role of elastic dephasing Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1221 (2000)
774 C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P.N. Brunkov, B.V. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov Comparison of hole and electron emission from InAs quantum dots Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 375 (2000)
775 A.R. Goni, A. Cantarero, H. Scheel, S. Reich, C. Thomsen, P.V. Santos, F. Heinrichsdorff, D. Bimberg Different temperature renormalizations for heavy and light-hole states of monolyer-thick heterostructures <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Communications 116, 121 (2000)
776 A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, E.E. Zavarin, A.S. Usikov, A.F. Tsatsul'nikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, Zh.I. Alferov Effect of annealing on phase separation in ternary III-N alloys Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 216 (2000)
777 L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg abstract Effect of excited-state transitions on the threshold characteristics of a quantum dot laser Proc. SPIE, Physics and Simulation of Optoelectronic Devices VIII 3944, 823 (2000)
778 V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U.W. Pohl, D. Bimberg Effect of random field fluctations on excitonic transitions of individual CdSe quantum dots Phys. Rev. B 61, 9944 (2000)
779 A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov Electrically and optically pumped mid-infrared emission from quantum dots Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1157 (2000)
780 <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, G.Ya. Slepyan, V.P. Kalosha, S.V. Maly, N.N. Ledentsov, J. Herrmann, A. Hoffmann, D. Bimberg, Zh.I. Alferov Electromagnetic response of 3D arrays of quantum dots J. Elec. Mat. 29, 494 (2000)
781 M. Grundmann, O. Stier, A. Schliwa, D. Bimberg Electronic structures of cleaved-edge-overgrowth strain induced quantum wires Phys. Rev. B 61, 1744 (2000)
782 C.M.A. Kapteyn, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, G. abstractreiter Fermi-filling of Ge quantum dots in Si Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1053 (2000)
783 I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, D. Bimberg, D.A. Bedarev, I.V. Kochnev, V.M. Lantratov, N.A. Cherkashin, Yu.G. Musikhin, Zh.I. Alferov Formation of defect-free InGaAs-GaAs quantum dots for 1.3 µm spectral range grown by metal-organic chemical vapor deposition Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> , p. 355 (2000)
784 A.F. Tsatsul'nikov, I.L. Krestnikov, V.W. Lundin, A.V. Sakharov, D.A. Bedarev, A.S. Usikov, Zh.I. Alferov, B.Ya. Ber, V.V. Tret'yakov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, T. Riemann, J. Christen, Yu.G. Musikhin, L.P. Soshnikov, D. Lit Formation of GaAsN nanoinsertions in a GaN matrix Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 395 (2000)
785 A.F. Tsatsul'nikov, I.L. Krestnikov, V.W. Lundin, A.V. Sakharov, A.P. Kartashova, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut abstract Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition Semicond. Sci. Technol. 15, 766 (2000)
786 M.V. Maximov, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report J. Elec. Mat. 29, 476 (2000)
787 G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, .N.N. Ledentsov, . Heitz, D. Bimberg, N.D. Zakharov, P. Werner, U. Gösele Heteroepitaxial growth of InAs on Si: The new Type of quantum dots Mater. Phys. Mech. 1, 15 (2000)
788 D. Bimberg High power quantum dot lasers Conf. Digest of Lasers and Electro-Optics Europe 2000, 10-15 Sep, 1 (2000)
789 F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, D. Bimberg High power quantum dot lasers at 1100 nm Appl. Phys. Lett. 76, 556 (2000)
790 Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg High power quantum dot lasers at 1140 nm 17th Intern. Semiconductor Laser Conf. 2000, Conf. Digest 2000, IEEE, p. 131 (2000)
791 C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P.N. Brunkov, B.V. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov Hole and electron emission from InAs quantum dots Appl. Phys. Lett. 76, 1573 (2000)
792 G.E. Cirlin, V.A. Egorov, V.N. Petrov, A.O. Golubok, N.I. Komyak, N.K. Polyakov, Yu.B. Samsonenko, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. <st1:place w:st="on"><st1:city w:st="on">Bimberg</st1:city>, <st1:state w:st="on">N.D.</st1:state></st1:place> Zakharov, P. Werner, U. Gösele InAs nanostructures in a silicon matrix: Growth and properties Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 51 (2000)
793 J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm Electronics Lett. 36, 1384 (2000)
794 A.B. Sakharov, W.V. Lundin, I.L. Krestnikov, D.A. Bedarev, A.F. Tsatsul'nikov, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Influence of growth interruptions and gas ambient on optical and structural properties of InGaN/GaN multilayer structures Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, p. 241 (2000)
795 A.S. Usikov, W.V.Lundin, D.A. Bedarev, E.E. Zavarin, A.F. Sakharov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg Influence of the thick GaN buffer growth conditions on the electroluminescence properties of GaN/InGaN multilayer heterostructures Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, p. 875 (2000)
796 M.V. Maximov, I.L. Krestnikov, Yu.M. Shernyakov, A.E. Zhukov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, Zh.I. Alferov, A.Yu. Chernyshov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices J. Elec. Mat. 29, 487 (2000)
797 A. Dadgar, J. Christen, S. Richter, F. Bertram, A. Diez, J. Bläsing, A. Krost, A. Strittmatter, D. Bimberg, A. Alam, M. Heuken InGaN blue light emitter grown on Si(111) using an AlAs seed layer Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, 845 (2000)
798 D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg Investigations on the formation kinetics of CdSe quantum dots J. Cryst. Growth 214/215, 698 (2000)
799 D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg Investigations on the Stranski-Krastanov growth of CdSe quantum dots Appl. Phys. Lett. 76, 418 (2000)
800 D. Bimberg, M. Grundmann Kleine Teilchen - große Wirkung GEO 5, 205 (2000)
801 I.L. Krestnikov, A.V. Sakharov, V.W. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul'nikov, N. N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, D. Bimberg abstract Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots Semiconductors 34, 481 (2000)
802 I.L. Krestinikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, A. Hoffmann, D. Bimberg Lasing in vertical direction in structures with InGaN quantum dots phys. stat. sol. (a) 180, 91 (2000)
803 Matthias Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude, D. Hommel Lateral-index guided ZnCdSSe-based lasers J. Cryst. Growth 214/215, 1054 (2000)
804 <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha, A. Hoffmann, D. Bimberg Light confinement in a quantum dot Semicond. Sci. Technol. 15, 1-6 (2000)
805 V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U.W. Pohl, D. Bimberg Line broadening and localization mechanisms in CdSe / ZnSe quantum dots J. Luminescence 87-89, 337 (2000)
806 V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, B.V. Volovik, Yu.G. Musikhin, Yu.M. Shernykov, E.Yu. Kondrat'eva, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, J.A. Lott, D. Bimberg Long wavelength quantum dot lasers on GaAs substrates Nanotechnology 11, 397 (2000)
807 V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, A.F. Tsatsul'nikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, P.S. Kop'ev, Zh.I. Alferov, L.E. Vorob'ev, D.A. Firsov. A.A. Suvorova, I.P. Soshnikov, P. Werner, N.N. Ledentsov, D. Bimberg Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates Microelectronic J. 31, 1 (2000)
808 M. Strassburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude,. D. Hommel Low threshold current densities for II-VI lasers Electronics Lett. 36, 878 (2000)
809 A.R. Goni, H. Born, R. Heitz, A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg Magnetoluminescence study of annealing effects on the electronic structure of self-organized InGaAs/Gaas quantum dots Jpn. J. Appl. Phys. 39, 3907 (2000)
810 R. Heitz, F. Guffarth, <st1:place w:st="on">I.</st1:place> Mukhamethzahnov, M. Grundmann, A. Madhukar, D. Bimberg Many-body effects on the optical spectra of InAs/GaAs quantum dots Phys. Rev. B 62, 16881 (2000)
811 C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy Appl. Phys. Lett. 77, 4169 (2000)
812 V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, Y.G. Musikhin, A.F. Tsatsul'nikov, B.V. Volovik, D.A. Bedarev, M.V. Maximov, D.A. Livshits, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg MBE growth, structural and optical characterization of InAs/InGaAlAs self-organized quantum dots Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 57 (2000)
813 A.F. Tsatsul'nikov, B.V. Volovik, D. A. Bedarev, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maksimov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov Mechanisms of InGaAlAs solid decomposition stimulated by InAs quantum dots Semiconductors 34, 323 (2000)
814 Matthias Straßburg, Martin Straßburg, U.W. Pohl, D. Bimberg Metalorganic vapor-phase epitaxy of ZnMgCdSe structures of InP J. Cryst. Growth 214/215, 115 (2000)
815 R. Gibis, S. Schelhase, R. Steingrüber, G. Urmann, H. Künzel, S. Thiel, O. Stier, D. Bimberg MOMBE selective infill growth of InP/GaInAs for quantum dot formation J. Cryst. Growth 209, 499 (2000)
816 M. Meixner, R. Kunert, S. Bose, E. Schöll, V.A. Shchukin, D. Bimberg, E. Penev, P. Kratzer <st1:place w:st="on">Monte Carlo</st1:place> simulation of the self-organised growth of quantum dots with anisotropic surface diffusion Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 381 (2000)
817 D. Bimberg, N.N. Ledentsov Nano-Optoelectronics: From promise to realization Proc. 7th Intern. Symp. on Trends and Applications of Thin Films, TATF‘2000, <st1:place w:st="on"><st1:city w:st="on">Nancy</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, March 2000, p. 120 (2000)
818 V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, Yu.G. Musikhin, V.B. Volovik, A. Schliwa, O. Stier, R. Heitz, D. Bimberg New tools to control morphology of self-organized quantum dot nanostructures Proc. Mat. Res. Soc. Symp., San Francisco, USA 618, 79 (2000)
819 Martin Straßburg, Th. Deniozou, A. Hoffmann, S. Rodt, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Schikora Optical identification of quantum dot types in CdSe/ZnSe structures J. Cryst. Growth 214/215, 756 (2000)
820 N.D. Zakharov, P. Werner, U. Gösele, V.M. Ustinov, G.E. Cirlin, B.V. Volovik, N.K. Polyakov, V.N. Petrov, V.A. Egorov, N.N. Ledenstov, Zh.I. Alferov, R. Heitz, D. Bimberg Optical properties and structure of Si/InAs/Si layers grown by MBE on Si substrate Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 322 (2000)
821 R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. <st1:place w:st="on"><st1:city w:st="on">Soshnikov</st1:city>, <st1:state w:st="on">N.D.</st1:state></st1:place> Zakharov, P. Werner, U. Gösele Optical properties of InAs quantum dots in a Si matrix Physica E 7, 317 (2000)
822 B.V. Volovik, A.R. Kovsh, W. Passenberg, H. Kuenzel, Yu.G. Musikhin, V.A. Odnoblyudov, N.N. Ledentsov, D. Bimberg, V.M. Ustinov Optical properties of InGaAsN/GaAs quantum well and quantum dot structures for longwavelength emission Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 148 (2000)
823 M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, N.N. Ledentsov, A.E. Zhukov, A.R. Kovsh, A. Kovsh, N.A. Maleev, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, R. Heitz, D. Bimberg Optical properties of quantum dots formed by activated spinodal decomposition of GaAs-based lasers emitting at ~ 1.3 µm Microelectronic Engineering 51-52, 61 (2000)
824 M. Grundmann, O. Stier, S. Bognár, C. Ribbat, F. Heinrichsdorff, D. Bimberg Optical Properties of Self-organized Quantum Dots: Modelling and Experiments phys. stat. sol. (a) 178, 255 (2000)
825 O. Schulz, M. Straßburg, U.W. Pohl, D. Bimberg, A. Itoh, K. Nakano, A. Ishibashi, M. Klude, D. Homel Optimised implantation-induced disordering for lowering of the threshold current density of II-VI laser diodes phys. stat. sol.(a) 180, 213 (2000)
826 S. Rodt, V. Türck, R. Heitz, M. Straßburg, U.W. Pohl, D. Bimberg Phonon-assisted energy transfer from barrier states into quantum dots Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1231 (2000)
827 R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, D. Bimberg Phonon-assisted exciton-transitions in self-organized InAs/GaAs quantum dots Physica E 7, 398 (2000)
828 A.E. Zhukov, A.R Kovsh, S.S. Mikhrin, N.A. Maleev, V.A. Odnoblyudov, V.M. Ustinov, Yu.M. Shernyakov, E.Yu. Kondrat'eva, D.A. Livshits, IS. Tarasov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg Power conversion efficiency of quantum dot laser diodes Semiconductors 34, 609 (2000)
829 M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, D.A. Lifshits, V.M. Ustinov, Zh.I. Alferov Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications Jpn. J. Appl. Phys. 39, 2341 (2000)
830 F. Romstad, P. Borri, J. Moerk, J. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg Pulse distortion in a quantum dot amplifier Conf. on Lasers and Electro-Optics (CLEO 2000), p. 471 (2000)
831 D. Bimberg, N.N. Ledenstov, R. Sellin, Ch. Ribbat, M. Mao, M. Grundmann, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, Zh.I. Alferov Quantum dot lasers Proc. LEOS 2000 IEEE 13th Annual Meeting, Rio Grande, Puerto Rico, p. 302 (2000)
832 D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, B.V. Volovik, A.F. Tsatsul'nikov, P.S. Kop'ev, Zh.I. Alferov Quantum Dot Lasers: Breakthrough in optoelectronics Thin Solid Films 367, 235 (2000)
833 N.N. Ledentsov, D. Bimberg, V.M. Ustinov, J.A. Lott, Zh.I. Alferov Quantum dot lasers: The promises come to reality Memoirs of The Institute of Scientific and Industrial Research, <st1:city w:st="on"><st1:place w:st="on">Osaka</st1:place></st1:city> 57, 80 (2000)
834 M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, R. Heitz, N.N. Ledentsov, D. Bimberg Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors Physica E 7, 326 (2000)
835 N.N. Ledentsov, I.L. Krestnikov, M. Straßburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen Quantum dots formed by ultrathin insertions in wide gap matrices Thin Solid Films 367, 40 (2000)
836 C. Meyne, U.W. Pohl, W. Richter, M. Straßburg, A. Hoffmann, V. Türck, S. Rodt, D. Bimberg, D. Gerthsen Quantum island formation in CdS/ZnS heterostructures grown by MOVPE J. Cryst. Growth 214/215, 722 (2000)
837 R. Heitz, O. Stier, I. Mukhametzhanov, A. Madhukar, D. Bimberg Quantum size effect in self-organized InAs/GaAs quantum dots Phys. Rev. B 62, 11017 (2000)
838 N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Zh.I. Alferov Quantum-Dot Heterostructure Lasers IEEE, J. of Selected Topics in Quant. Electr. 6, 439 (2000)
839 D. Bimberg, N.N. Ledentsov Quantum-Dot Lasers: From promise to reality Proc. SPIE’s Intern. Symp. Optoelectronics 2000 (Photonic West), <st1:place w:st="on"><st1:city w:st="on">San Jose</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 790 (2000)
840 M. Straßburg, M. Dworzak, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka, D. Schikora Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanow mode phys. stat. sol. (a) 180, 281 (2000)
841 R. Heitz, H. Born, A. Hoffmann, D. Bimberg, I. Mukhametzhanov, A. Madhukar, Resonant Raman scattering in self-organized InAs/GaAs quantum dots Appl. Phys. Lett. 77, 3746 (2000)
842 R. Heitz, H. Born, T. Lüttgert, A. Hoffmann, D. Bimberg Resonantly excited time-resolved photoluminescence study of self-organized InGaAs/GaAs quantum dots phys. stat. sol. (b) 221, 65 (2000)
843 J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg Room temperature continuous wave InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm Proc. LEOS 2000 IEEE 13th Annual Meeting, <st1:city w:st="on">Rio Grande</st1:city>, <st1:place w:st="on">Puerto Rico</st1:place> , p. 304 (2000)
844 P. Borri, W. Langbein, J. Mørk, J.V. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg Room-temperature dephasing in InAs quantum dots phys. stat. sol. (a) 178, 337 (2000)
845 D. Bimberg, F. Heinrichsdorff, N.N. Ledentsov, V.A. Shchukin Self-organized growth of semiconductor nanostructures for novel light emitters Appl. Surf. Sci. 159-160, 1 (2000)
846 E. Martinet, M.-A. Dupertuis, F. Reinhardt, G. Biasiol, E. Kapon, O. Stier, M. Grundmann, D. Bimberg Separation of Strain and Confinement Effects in the Photoluminescence Excitation Spectra of InGaAs/AlGaAs V-Groove Quantum Wires Phys. Rev. B 61, 4488 (2000)
847 R. Heitz, H. Born, A. Hoffmann, F. Guffarth, D. Bimberg Shape-dependent phonon bottleneck in InGaAs/GaAs quantum dots Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1167 (2000)
848 P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg Spectral hole-burning and carrier-heating dynamics in quantum dot amplifiers IEEE, J. of Selected Topics in Quant. Electr. 6, 544 (2000)
849 V.A. Shchukin, N.N. Ledentsov, D. Bimberg Spontaneous formation of arrays of strained islands: Thermodynamics versus kinetics Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 23 (2000)
850 N.A. Maleev, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, D.A. Bedarev, B.V. Volovik, I.L. Krestnikov, I.N. Kayander, V.A. Odnoblyudov, A.A. Suvorova, A.F. Tsatsul'nikov, Yu.M. Shernyakov, N.N. Ledentsov, PlS. Kop'ev, Zh.I. Alferov, D. Bimberg abstract Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range Semiconductors 34, 594 (2000)
851 A. Strittmatter, D. Bimberg, A. Krost, J. Bläsing, P. Veit Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer J. Cryst. Growth 221, 293 (2000)
852 N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, B.V. Volovik, Zh.I. Alferov, N.K. Polyakov, V.N. Petrov, V.A.Egorov, G.E. Cirlin Structure and optical properties of Si/InAs/Si layers grown by mbe on Si substrate at different temperatures Proc. Mat. Res. Soc. Symp., San Francisco, USA 618, 249 (2000)
853 N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, B.V. Volovik, Zh.I. Alferov, N.K. Polyakov Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate Appl. Phys. Lett. 76, 2677 (2000)
854 R. Sellin, F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, U.W. Pohl, D. Bimberg Surface flattering during MOCVD of thin GaAs layers covering InGaAs quantum dots J. Cryst. Growth 221, 581 (2000)
855 L. Müller-Kirsch, U.W. Pohl, R. Heitz, H. Kirmse, W. Neumann, D. Bimberg Thin GaSb insertions and quantum dot formation in GaAs by MOCVD J. Cryst. Growth 221, 611 (2000)
856 P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection Appl. Phys. Lett. 76, 1380 (2000)
857 M. Straßburg, V. Kutzer, M. Dworzak, A. Hoffmann, R. Heitz, D. Bimberg, I. Kudryashov, K. Lischka, D. Schikora Time-resolved studies and high-excitation properties of CdSe/ZnSe quantum dots Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1323 (2000)
858 I.L. Krestnikov, H. Born, T. Lüttgert, R. Heitz, A.F. Tsatsul'nikov, B.V. Volovik, M.V. Maximov, Yu.G. Musikhin, A.R. Kovsh, N.A. Maleev, A.E. Zhukov, V.M. Ustinov, N.N. Ledentsov, A. Hoffmann, Zh.I. Alferov, D. Bimberg Time-resolved studies of large In GaAs/GaAs quantum dots Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1241 (2000)
859 M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, D.S. Sizov, Yu.M. Shernyskov, I.N. Kaiander, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, R. Heitz, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, Yu.G. Musikhin, W. Neumann Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors Phys. Rev. B 62, 16671 (2000)
860 P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers IEEE Photonics Techn. Lett. 12, 594 (2000)
861 Matthias Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, S. Itoh, K. Nakano, A. Ishibashi Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering Electronics Lett. 36, 44 (2000)
862 J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrages emitting at 1.3 µm Conf. Digest of 17th Intern. Conf. of Semiconductor Laser Conf., 25-28 Sep, 13 (2000)
863 A.F. Tsatsul'nikov, A.R. Kovsh, A.E. Zhukov, Yu.M. Shernyakov, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, A.M. Mintairov, J.L. Merz, N.N. Ledentsov, D. Bimberg Volmer-Weber and Stranski-Krastanov InAs-(<st1:place w:st="on"><st1:city w:st="on">Al</st1:city>,<st1:state w:st="on">Ga</st1:state></st1:place>)As quantum dots emitting at 1.3 µm J. Appl. Phys. 88, 6272 (2000)
864 Matthias Straßburg, Martin Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, D. Litvinov, D. Gerthsen, M. Schmidtbauer, P. Schäfer ZnMgCdSe structures on InP grown by MOVPE J. Christ. Growth 221, 416 (2000)