TU Berlin

Workgroup Prof. Dr. D. Bimberg1998 - 2000

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1998 - 2000

553            Th. Engel, A. Strittmatter, W. Passenberg, E. Dröge, A. Umbach, W. Schlaak, R. Steingrüber, A. Seeger, G.G. Mekonnen, G. Unterbörsch, H.-G. Bach, E.H. Böttcher, D. Bimberg                    38 GHz Narrow Band Photoreceiver OEIC with MSM Photodetector and HEMT Amplifier                    Proc. European Conference on Optical Communication ECOC‘98, <st1:place w:st="on"><st1:city w:st="on">Madrid</st1:city>, <st1:country-region w:st="on">Spain</st1:country-region></st1:place>, p. 63 (1998)
554            E. Dröge, E.H. Böttcher, D. Bimberg, O. Reimann, R. Steingrüber                    70 GHz InGaAs metal-semiconductor-metal photodetectors for polarisation-insensitive operation                    Electron. Lett. 34, 1421 (1998)
555            E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, D. Bimberg, O. Reimann, R. Steingrüber                    78 GHz distributed InGaAs MSM Photodetector                    Electron. Lett. 34, 2241 (1998)
556            O. Reimann, D. Huhse, E. Dröge, E.H. Böttcher, D.Bimberg, H.D. Stahlmann                    Advanced Semiconductor Laser Based Electro-Optical Sampling System Using SolitonPulse Compression for Direct Probing at 1.55-µm Wavelength                    Proc. LEOS ´98, Orlando 1, p. 215 (1998)
557            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop’ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott                    Application of self-organized quantum dots to edge emitting and vertical cavity lasers                    Physica E 3, 129 (1998)
558            St. Kollakowski, Ch. Lemm, E. H. Böttcher, D. Bimberg                    Buried InAlGaAs/InP waveguides – etching, overgrowth, and characterization                    IEEE Photon. Technol. Lett. 10, 114 (1998)
559            F. Hatami, M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, R. Heitz, J. Böhrer, D. Bimberg, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov                    Carrier dynamics in type-II GaSb/GaAs qantum dots                    Phys. Rev. B 57, 4635 (1998)
560            M. Grundmann, R. Heitz, D. Bimberg                    Carrier statistics in quantum dot lasers                    Physics of the <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> 40, 772 (1998)
561            A. Khan, M.Z. Iqbal, U.S. Qurashi, M. Yamaguchi, N. Zafar, A. Dadgar, D. Bimberg                    Characteristics of alpha-radiation-induced deep level defects in p-type InP grown by metal-organic chemical vapor deposition                    Jpn. J. Appl. Phys. 37, 4595 (1998)
562            R. Schneider, H. Kirmse, W. Neumann, M. Kappelt, F. Heinrichsdorff, A. Krost, D. Bimberg                    Characterization of III-V quantum structures by EFTEM                    Electron Microscopy III, 429 (1998)
563            A. Strittmatter, A. Krost, K. Schatke, D. Bimberg, J. Bläsing, J. Christen                    Comparison between <st1:place w:st="on"><st1:city w:st="on">GaAs</st1:city>, <st1:state w:st="on">AlAs.</st1:state></st1:place> and AlN buffer layers for the growth of GaN layers on silicon substrates                    Proc.Intern. Conf. on Silicon Carbide, III-nitrides and Related Materials, Stockholm, Sweden, p. 1145 (1998)
564            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, M.V. Maximov, Zh.I. Alferov, J.A. Lott                    Competitive vertical cavity and edge emitting quantum dot lasers                    Proc. Conf. on Lasers and Electro-Optics Europe, CLEO <st1:place w:st="on">EUROPE</st1:place>, 14-18 Sep, p. 63 (1998)
565            V. Türck, F. Heinrichsdorff, M. Veit, R. Heitz, M. Grundmann, A. Krost, D. Bimberg                    Correlation of InGaAs/GaAs quantum dot and wetting layer formation                    Appl. Surf. Sci. 123/124, 352 (1998)
566            Th. Engel, G.G. Mekonnen, A. Umbach, V. Breuer, H.-G. Bach, E.H. Böttcher, D. Bimberg                    Design and modeling of narrow band InP-photoreceiver OEICs based on HEMTs and MSM photodetector                    Proc. 22nd Workshop on Compound Semiconductor Devices and Integrated Circuits WOCSDICE ‘98, Zeuthen (1998)
567            Th. Engel, A. Strittmatter, W. Passenberg, A. Seeger, R. Steingrüber, G.G. Mekonnen, G. Unterbörsch, D. Bimberg                    Design, fabrication and characterizaiton of narrow band photoreceiver OEISs based on InP                    Proc. LEOS’98 Annual Meeting, <st1:place w:st="on"><st1:city w:st="on">Orlando</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 75 (1998)
568            Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, V.M. Ustinov, Zhao Zehn, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    Device characteristics and their anisotropy in high power quantum dots                    Techn. Phys. Lett. 24, 50 (1998)
569            M. Kuttler, M. Straßburg, U.W. Pohl, D. Bimberg                    Diffusion of Cd, Mg and S IN ZnSe-based quantum well structures                    Thin Solid Films 336, 208 (1998)
570            E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, O. Reimann, R. Steingrüber, A. Umbach, D. Bimberg                    Distributed Millimeter-Wave InGaAs Metal-Semiconductor-Metal Photodetector                    Technical Digest Intern. Topical Meeting on Microwave Photonics, MWP‘98, <st1:place w:st="on"><st1:city w:st="on">Princeton</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 173 (1998)
571            E. Dröge, E.H. Böttcher, St. Kollakowski, A. Strittmatter, O. Reimann, R. Steingrüber, A. Umbach, D. Bimberg                    Distributed MSM Photodetectors for the <st1:place w:st="on"><st1:placename w:st="on">Long-Wavelength</st1:placename> <st1:placetype w:st="on">Range</st1:placetype></st1:place>                    Proc. European Conference on Optical Communication ECOC‘98, <st1:place w:st="on"><st1:city w:st="on">Madrid</st1:city>, <st1:country-region w:st="on">Spain</st1:country-region></st1:place>, p. 57 (1998)
572            M. Straßburg, M. Kuttler, O. Stier, U.W. Pohl, D. Bimberg, M. Behringer, D. Hommel                    Doping dependent Mg diffusion in ZnMgSSe/ZnSSe-structures                    J. Crystal Growth 184/185, 465 (1998)
573            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott                    Edge and vertical cavity surface emitting InAs quantum dot lasers                    Solid-State Electronics 42, 1433 (1998)
574            A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maksimov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    Effect of the quantum-dot surface density in the active region on injection-laser characteristics                    Semiconductors 32, 997 (1998)
575            <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, V.P. Kalosha, N.N. Ledentsov, G.Ya. Slepyan, D. Bimberg                    Effective-medium approach for certain laser active media                    Proc. 7th Intern. Conf. on Complex Media Bianisotropics ‘98, A.F. Jacob and J. Reinert eds., Braunschweig, p. 81 (1998)
576            H. Nakashima, T. Kato, K. Maehashi, T. Nishida, Y. Inoue, T. Takeuchi, K. Inoue, P. Fischer, J. Christen, M. Grundmann, D. Bimberg                    Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE                    Mat. Sci. Eng. B51, 229 (1998)
577            M. Kuttler, M. Straßburg, V. Türck, R. Engelhardt, U.W. Pohl, D. Bimberg, M. Behringer, D. Hommel, J. Nürnberger, G. Landwehr                    Efficient lateral index guiding of II-VI laser structures by implantation-induced disordering                    J. Crystal Growth 184/185, 566 (1998)
578            M. Grundmann, O. Stier, D. Bimberg                    Electronic states in strained cleaved edge overgrowth quantum wires and quantum dots                    Phys. Rev. B 58, 10557 (1998)
579            A. Strittmatter, A. Krost, K. Schatke, D. Bimberg, J. Bläsing, J. Christen                    Epitaxial growth of GaN on silicon substrates by low-pressure MOCVD using AlAs, AlAs/GaAs, and AlN butter layers                    Proc.The Second Intern. Conf. on Nitride Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Tokushima</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 324 (1998)
580            R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg                    Excited states and energy relaxation in stacked InAs/GaAs quantum dots                    Phys. Rev. B 57, 9050 (1998)
581            G.F. Cirlin, V.N. Petrov, V.G. Dubrovski, S.A. Masalov, A.O. Golubok, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg abstract Fabrication of InAs quantum dots on silicon                    Tech. Phys. Lett. 24, 290 (1998)
582            D. Bimberg, N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott                    Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers                    Proc. IEEE Intern. Conf. on Compound Semiconduct., <st1:city w:st="on"><st1:place w:st="on">San Diego</st1:place></st1:city>, 1997, p. 547 (1998)
583            O. Stier, V. Türck, M. Kappelt, D. Bimberg                    First observation of symmetry breaking in strained In0.7Ga0.3As/InP V-groove quantum wires                    Physica E 2, 969 (1998)
584            A.F. Tsatsul’nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maximov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Zhao Zhen, V.N. Petrov, G.E. Cirlin, D. Bimberg, P.S. Kop’ev, Zh.I. Alferov                    Formation of InAs quantum dots in a GaAs matrix by growth on vicinal substrates                    Semiconductors 32, 95 (1998)
585            A.F. Tsatsul'nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Chao Chen, P.S. Kop'ev, Zh.I. Alferov, V.N. Petrov, G.F. Cirlin, D. Bimberg abstract Formation of InAs Quantum dots in a GaAs matrix during growth on misoriented substrates                    Semiconductors å, 84 (1998)
586            G.E. Cirlin, V.G. Dubrovskii, V.N . Petrov, N.K. Polyakov, N.P. Korneevat, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.J. Komyak, V.M . Ustionov, A.Yu Egorov, A.R. Kovsh, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.E.                    Formation of InAs quantum dots on silicon (100) surface                    Semicond. Sci. Technol. 13, 1262 (1998)
587            A.F. Tsatsul'nikov, S.V. Ivanov, P.S. Kop’ev, A.K. Kryganovskii, N.N. Ledentsov, M.V. Maximov, B.Ya. Meltser, P.V. Nekludov, A.A. Suvorova, A.N. Titkov, B.V. Volovik,  M. Grundmann, D. Bimberg, Zh.I. Alferov                    Formation of InSb quantum dots in a GaSb matrix                    J. Electr. Mat 27, 414 (1998)
588            D. Bimberg, V.A. Shchukin, N.N. Ledentsov, A. Krost, F. Heinrichsdorff                    Formation of self-organized quantum dots at semiconductor surfaces                    Appl. Surf. Sci. 130-132, 713 (1998)
589            M. Straßburg, N.N. Ledentsov, A. Hoffmann, U.W. Pohl, D. Bimberg, I.L. Krestnikov,S.V. Ivanov, M.V. Maximov, S.V. Sorokin, P.S. Kop'ev, Zh.I. Alferov                    Gain studies and lasing in excitonic waveguides of II-VI submonolayer structures                    Physica E 2, 542 (1998)
590            M. Straßburg, V. Kutzer, U.W. Pohl, A. Hoffmann, I. Broser, N.N. Ledentsov, D. Bimberg, Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, P.S. Kop’ev, Zh.I. Alferov                    Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix                    Appl. Phys. Lett. 72, 942 (1998)
591            V. Kutzer, M. Straßburg, A. Hoffmann, I. Broser, U.W. Pohl, N.N. Ledentsov, D. Bimberg,  S.V. Ivanov                    Gain to absorption conversion by increasing excitation density in excitonic wave­guides                    J. Crystal Growth 184/185, 632 (1998)
592            D. Huhse, C. Warmuth, D. Bimberg, A.A. Sysoliatin, E.M. Dianov                    Generation of ultrashort (<500 fs) wavelength tunable laser pulses by self-seeding and adiabatic soliton compression                    Proc. CLEO/Europe ‘98, Glasgow, Paper CTu I 67, p. 102 (1998)
593            A. Dadgar, O. Stenzel, L. Koehne, A. Naeser, M. Straßburg, W. Stolz, D. Bimberg, H. Schumann                    Growth of Ru doped semi-insulating InP by low pressure metalorganic chemical vapor deposition                    J. Cryst. Growth 195, 69 (1998)
594            D. Bimberg, M. Grundmann, N.N. Ledentsov                    Growth, spectroscopy, and laser application of self-ordered III-V quantum dots                    MRS Bulletin 23, 31 (1998)
595            M.v. Ortenberg, K. Uchida, N. Miura, F. Heinrichsdorff, D. Bimberg                    High magnetic fields probing nanostructures: Magneto-condensation into quantum dots                    Physica B 246/247, 88 (1998)
596            M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul’nikov, A.V. Lunev, A.V. Sakharov, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, P.S. Kop’ev, L.V. Asryan, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, P. Werner                    High power continuous wave operation of InGaAs/AlGaAs quantum dot laser                    J. Appl. Phys. 83, 5561 (1998)
597            A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, V. Türck, A. Krost, D. Bimberg                    High-gain excitonic lasing from a single InAs monolayer in bulk GaAs                    Appl. Phys. Lett. 72, 1433 (1998)
598            St. Kollakowski, E.H. Böttcher, A. Strittmatter, D. Bimberg                    High-speed InGaAs/InAlGaAs/InP waveguide-integrated MSM photodetector for the 1.3 – 1.55 µm wavelength range                    Electron. Lett. 34, 587 (1998)
599            R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov                    Hot carrier relaxation in InAs/GaAs quantum dots                    Physica E 2, 578 (1998)
600            G.E. Cirlin, V.G. Dubrovski, V.N. Petrov, N.K. Polyakov, N.P. Korneeva, V.N. Demidov, A.O. Golubok, S.A. Masalov, D.V. Kurochkin, O.M. Gorbenko, N.I. Komyak, N.N. Ledentsov,Zh.I. Alferov, D. Bimberg                    InAs nanoscale islands on Si surface: a new type of quantum dots                    Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 249 (1998)
601            G.E. Cirlin, V.N. Petrov, V.G. Dubrovsky, S.A. Masalov, A.O. Golubok, N.I. Komyak, N.N. Ledentsov, Zh.I. Alferov, D. Bimberg                    InAs quantum dots on Si                    Techn. Phys. Lett. 24, 10 (1998)
602            M. Grundmann, N.N. Ledentsov, F. Heinrichsdorff, M.-H. Mao, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh.I. Alferov, J.A. Lott                    InAs/GaAs quantum dot injection lasers                    Workbook of the Topical Meeting on "Radiative Processes and Dephasing in Solids", Coeurd'Aline, <st1:state w:st="on"><st1:place w:st="on">Idaho</st1:place></st1:state>, Trends in Optics and Photonics OSA Series 18, 34 (1998)
603            M. Kappelt, V. Türck, D. Bimberg                    InAsxP1-x V-Groove quantum wires                    Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 587 (1998)
604            F. Heinrichsdorff, M. Grundmann, O. Stier, A. Krost, D. Bimberg                    Influence of In/Ga intermixing on the optical properties of InGaAs quantum dots                    J. Cryst. Growth 195, 540 (1998)
605            M. Kappelt, V. Türck, D. Bimberg, H. Kirmse, I. Hähnert, W. Neumann                    InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparation                    Proc. The Ninth Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), J. Cryst. Growth 195, 552 (1998)
606            A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, N.V. Lukovskaya, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, A.V. Lunev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    Injection laser based on composite InAlAs/InAs vertically coupled quantum dots in AlGaAs matrix                    Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 386 (1998)
607            A.R. Goñi, M. Stroh, C. Thomsen, F. Heinrichsdorff, V. Türck, A. Krost, D. Bimberg                    Lasing and electronic properties of a single InAs monolayer embedded in bulklike GaAs                    Revista Mexicana de Fisica 44, 154 (1998)
608            B.V. Volovik, A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg abstract Lasing in Submonolayer InAs-AlGaAs structures without external optical confinement                    Tech. Phys. Lett. 24, 567 (1998)
609            M. Kuttler, M. Straßburg, U.W. Pohl, D. Bimberg                    Lateral index guiding in ZnCdSe quantum well lasers by selective implantation-induced disordering                    Appl. Phys. Lett. 73, 1865 (1998)
610            V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, S.V. Zaitsev, N.Yu. Gordeev, V.I. Kopchatov, N.N. Ledentsov, A.F. Tsatsul’nikov, B.V. Volovik, P.S. Kop’ev, Z.I. Alferov, S.S. Ruvimov, Z. Liliental-Weber, D. Bimberg                    Low threshold quantum dot injection laser emitting at 1.9 µm                    Electr. Lett. 34, 670 (1998)
611            D. Bimberg, M. Grundmann, R. Heitz                    Master equations for the micro-states description of carrier relaxation and recombination in quantum dots                    Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 1 (1998)
612            F. Heinrichsdorff, A. Krost, K. Schatke, D. Bimberg, A.O. Kosogov, P. Werner                    MOCVD growth and laser applications of In(Ga)As/GaAs quantum dots                    Proc. of the Electrochem. Soc. PV 98-2, Light Emitting Devices for Optoelectronic Applicatons and State-of-the-art program on compound semiconductors XXVIII, eds. H.Q. Hou, R.E. Sah, S.J. Pearton, F. Ren, K. Wada, ISBN 1-56677-194-3, p. 164 (1998)
613            U. Pohl, R. Engelhardt, V. Türck, D. Bimberg                    MOCVD of vertically stacked CdSe/ZnSSe quantum islands                    Proc. The Ninth Intern. Conf. on Metal Organic Vapor Phase Epitaxy (ICMOVPE IX), J. Cryst. Growth 195, 569 (1998)
614            L. Finger, M. Nishioka, M. Grundmann, R. Hogg, F. Heinrichsdorff, O. Stier, D. Bimberg, Y. Arakawa                    Modification of energy relaxation of InGaAs quantum dots by postgrowth thermal annealing                    Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 151 (1998)
615            Th. Engel, A., Strittmatter, W. Passenberg, A. Umbach, W. Schlaak, E. Dröge, A. Seeger, R. Steingrüber, G.G. Mekonnen, G. Unterbörsch, H.-G. Bach, E.H. Böttcher, D. Bimberg,                    Narrow-band photoreceiver OEIC on InP operating at 38 Ghz                    IEEE Photon. Technol. Lett. 10, 1298 (1998)
616            M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg                    Neuartige Halbleiterlaser auf der Basis von Quantenpunkten                    Laser und Optoelektronik 30, 70 (1998)
617            M. Grundmann, R. Heitz, D. Bimberg                    New approach to modeling carrier distribution in quantum dot ensembles: Gain and threshold of QD lasers and impact of phonon bottleneck                    Physica E 2, 725 (1998)
618            Yu.M. Shernyakov, A.Yu. Egorov, B.V. Volovik, A.E. Zhukov, A.R. Kovsh, A.V. Lunev, N.N. Ledentsov, M.V. Maksimov, A.V. Sakharov, V.M. Ustinov, Zhao Zhen, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg abstract Operating characteristics and their anisotropy in high power laser (1.5 W, 300 K) with a quantum-dot active region                    Tech. Phys. Lett. 24, 351 (1998)
619            Zhao Zhen, M.V. Maximov, N.N. Ledentsov, A.E. Zhukov, V.M. Ustinov, A.Yu. Egorov, V.B. Volovik, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov, J. Böhrer, D. Bimberg                    Optical characteristics of InGaAs vertically-coupled quantum dots                    High Power Laser and Particle Beams 10, 43 (1998)
620            I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, S.V. Ivanov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, P.S. Kopev, Zh.I. Alferov, C.M. Sotomayor Torres                    Optical properties and lasing in CdSe-submonolayers in a (Zn,Mg)(S,Se) matrix                    phys. stat. sol. (a) 168, 309 (1998)
621            A.F. Tsatsul'nikov, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov,  M. Grundmann, D. Bimberg, Zh.I. Alferov                    Optical properties of InAlAs quantum dots in an AlGaAs matrix                    Appl. Surf. Sci. 123/124, 381 (1998)
622            J. Christen, T. Hempel, F. Bertram, N.N. Ledentsov, D. Bimberg, A.V. Sakharov, M.V. Maximov, A.S. Vsikov, W.V. Lundin, B.V. Pushnyi, Zh.I.Alferov                    Possible impact of surface morphology on stimulated emission in GaN-AlGaN double heterostructures                    Physica E 2, 557 (1998)
623            D. Bimberg, M. Grundmann, N.N. Ledentsov                    Quantum Dot Heterostructures                    John Wiley & Sons Ltd., <st1:place w:st="on">Chichester</st1:place>, GB ISBN 0471973882 (1998)
624            N.N. Ledentsov, V.M. Ustinov, A.V. Shchukin, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    Quantum dot heterostructures: fabrication, properties, lasers (Review)                    Semiconductors 32, 343 (1998)
625            D. Bimberg                    Quantum dot lasers – art and trends                    Proc. LEOS’98 Annual Meeting, <st1:place w:st="on"><st1:city w:st="on">Orlando</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> 1, p. 291 (1998)
626            N.N. Ledentsov, V.M. Ustinov, G.E. Cirlin, L.V. Vorob’ev, M. Grundmann, F. Heinrichsdorff, D. Bimberg, Zh.I. Alferov                    Quantum dot lasers - experimental results                    Proc. Advanced Research Workshop on Future Trends in Microelectronics: ‘Off the Beaten Path’, Ile des <st1:place w:st="on"><st1:city w:st="on">Embiez</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place> (1998)
627            Th. Engel, E. Dröge, G. Unterbörsch, E.H. Böttcher, D. Bimberg                    Reactive matching of millimetre-wave photodetectors using coplanar waveguide technology                    Electron. Lett. 34, 1690 (1998)
628            A.F. Tsatsul’nikov, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop’ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg                    Resonant waveguiding and lasing in structures with InAs submonolayers in an AlGaAs matrix                    Proc. 6th Intern. Symp. on Nanostructures: 98 Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 382 (1998)
629            I.L. Krestnikov, S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov, M.V. Maximov, A.V. Sakharov, S.V. Sorokin, A. Rosenauer, D. Gerthsen, C.M. Sotomayor Torres, D. Bimberg, Zh.I. Alferov                    RT exciton waveguiding and lasing in submonolayer CdSe-(Zn, MG)(S, Se) structures                    Mat. Sci. Eng. B51, 26 (1998)
630            Krestnikov, M. Maximov, A.V. Sakharov, P.S. Kop'ev, Zh.I. Ålferov, N.N. Ledentsov, D. Bimberg, C.M. Sotomayor Torres                    RT Lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattice                    J. Crystal Growth 184/185, 545 (1998)
631            A. Dadgar, O. Stenzel, L. Köhne, A. Näser, M. Straßburg, W. Stolz, H. Schumann, D. Bimberg                    Ruthenium a new thermally stable compensator in InP                    Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 57 (1998)
632            A. Dadgar, O. Stenzel, A. Näser, M. Zafar Iqbal, D. Bimberg, H. Schmann                    Ruthenium: A superior compensator on InP                    Appl. Phys. Lett. 73, 3878 (1998)
633            F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, P. Werner                    Self organized defect free InAs/GaAs and InAs/InGaAs quantum dots with high lateral density grown on MOCVD                    Appl. Surf. Sci. 123/124, 725 (1998)
634            I.L. Krestnikov, A.V. Sakharov, N.N. Ledentsov, I.P. Soshnikov, Yu.G. Musikhin, A.R. Kovsh, V.M. Ustinov, I.V. Kochnev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    Self-assembled formation of quantum dots during InGaAlAs quantum well growth                    Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 257 (1998)
635            M. Grundmann, N.N. Ledentsov, N. Kirstaedter, F. Heinrichsdorff, A. Krost, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov                    Semiconductor quantum dots for application in diode lasers                    Thin Solid Films 318, 83 (1998)
636            M. Behringer, K. Ohkawa, V. Großmann, H. Heinke, K. Leonardi, M. Fehrer, D. Hommel, M. Kuttler, M. Strassburg, D. Bimberg                    Stability issues of quaternary CdZnSSe and ternary CdZnSe quantum wells in blue-green laser diodes                    J. Crystal Growth 184/185, 580 (1998)
637            V.A. Shchukin, D. Bimberg                    Strain-driven self-organization of nanostructures on semiconductor surfaces                    Appl. Phys. Lett A 67, 687 (1998)
638            S. Ruvimov, Z. Lilienthal-Weber, J. Washburn, N.N. Ledentsov, V.M. Ustinov, V.A. Shchukin, P.S. Kop'ev, Zh.I. Alferov, D. Bimerg abstract Structural characterization of self-organized nanostructures                    Physics of the <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> 40, 781 (1998)
639            R. Engelhardt, V. Türck, U.W. Pohl, D. Bimberg, P. Veit                    Three-dimensionally confined excitons in MOCVD-grown ultrathin CdSe depo­sitions in ZnSSe matrix                    J. Crystal Growth 184/185, 311 (1998)
640            V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov, D. Bimberg                    Vertical correlations and anti-correlations in multi-layered arrays of 2D quantum islands                    Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 253 (1998)
641            V.A. Shchukin, V.G. Malyshkin, N.N. Ledentsov, D. Bimberg                    Vertical correlations and anticorrelations in multi-sheet arrays of two-dimensional islands                    Phys. Rev. B 57, 12262 (1998)
642            I.L. Krestnikov, P.S. Kop’ev, Zh.I. Alferov, M. Straßburg, N.N. Ledentsov, A. Hoffmann, D. Bimberg, C.M. Sotomayor Torres                    Vertical coupling of quantum islands in the CdSe/ZnSe submonolayer superlattices                    Proc. 6th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 187 (1998)
643            St. Kollakowski, E. Dröge, E.H. Böttcher, A. Strittmatter, O. Reimann, D. Bimberg                    Waveguide-integrated InP/InGaAs/InAlGaAs MSM photodetector for operation at 1.3 and 1.55 µm                    Proc. 10th Intern. Conf. on Indium Phosphide and Related Materials (IPRM), <st1:place w:st="on"><st1:city w:st="on">Tsukuba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 266 (1998)
644            I.L. Krestnikov, N.A. Maleev, M.V. Maximov, A.F. Tsatsul’nikov, A.E. Zhukov, A.R. Kovsh, I.V. Kochnev, N.M. Schmidt, N.N. Ledentsov, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    1.06 and 1.3 µm resonant cavity.enhanced photodetectors based on InGaAs quantum dots                    Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 131 (1999)
645            A.F. Tsatsul’nikov, D.A. Bedarev, A.R. Kovsh, P.S. Kop’ev, N.N. Ledentsov, N.A. Maleev, Yu.G. Musikhin, M.V. Maximov, A.A. Suvorova, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, D. Bimberg, P. Werner                    1.3 µm emission from 2 ML InAs quantum dots in a GaAs matrix                    Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 139 (1999)
646            A.F. Tsatsul’nikov, N.A. Bedarev, A.R. Kovsh, P.S. Kop'ev, N.A. Maleev, Yu.G. Musikhin, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, N.N. Ledentsov, D. Bimberg                    1.3 µm emission from quantum dots formed by 2 ML InAs deposition in a wide band gap (1.5-1.7 eV) InGaAlAs matrix                    Proc. 26th Intern. Symp. on Compound Semiconductors Inst. Phys. Conf. Ser. No 166, 261 (1999)
647            Yu.M. Shernyakov, D.A. Bedarev, E.Yu. Kondrat’eva, P.S. Kop’ev. A.R. Kovsh. N.A.  Maleev, M.V. Maximov, S.S. Mikhrin, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov and D. Bimberg                    1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition                    Electr. Lett. 35, 898 (1999)
648            V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maximov, B.V. Volovik, A.F. Tsatsul’nikov, P.S. Kop’ev, Zh.I. Alferov, I.P. Soshnikov, N. Zakharov, P. Werner, D. Bimberg                    1.75 µm emission from self-organized InAs quantum dots on GaAs                    J. Crystal Growth 201/202, 1143 (1999)
649            A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, M.V. Maximov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    3.3 W injection heterolaser based on self-organized quantum dots                    Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 128 (1999)
650            A.R. Kovsh, A.E. Zhukov, D.A. Livshits, A.Yu. Egorov, V.M: <st1:place w:st="on">Ustinov</st1:place>, M.V. Maximov, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg                    3.5 CW operation of quantum dot laser                    Electronics Lett. 35, 1161 (1999)
651            A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, M.V. Maximov, A.F. Tsatsul'nikov, I.P. Soshnikov, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg 3.9 W CW power from sub-monolayer quantum dot diode laser                    Electronics Lett. 35, 1845 (1999)
652            M. Grundmann, Ch. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, A.R. Kovsh, A.Yu. Egorov, D.A. Lifshits, M.V. Maximov, Yu.M. Shernyakov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov                    4 Watt High Power Quantum Dot Lasers                    41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
653            St. Kollakowski, A. Strittmatter, E. Dröge, E.H. Böttcher, D. Bimberg, O. Reimann, K. Janiak                    65 GHz InGaAs/InAlGaAs/InP waveguide-integrated photodetectors for the 1.3 – 1.55 µm wavelength regime                    Appl. Phys. Lett. 74, 612 (1999)
654            O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch                    Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition                    J. Vac. Sci. Technol. B 17, 1639 (1999)
655            D. Bimberg, V. Türck                    Blaue Laserdioden                    Verfahrenstechnik Marktübersicht 2000, Sonderveröffentlichung der Zeitschrift Verfahrenstechnik 33, 20 (1999)
656            Martin Straßburg, A. Hoffmann, S. Rodt, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, S. Schwedthelm, D. Schikora                    Blue emission from Stranski-Krastanov CdSe quantum dots                    Proc. Intern. Workshop on Advances in growth and characterization of II-VI semiconductors. <st1:place w:st="on"><st1:city w:st="on">Würzburg</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place> (1999)
657            R. Heitz, D. Bimberg, M.-H. Mao, F. Heinrichsdorff, P. Borri, J. MØrk, W. Langbein, J.M. Hvam                    Carrier dynamics in quantum dots and quantum dot lasers                    The 6th International Workshop on Femtosecond Technology, <st1:place w:st="on"><st1:city w:st="on">Chiba</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, 147 (1999)
658            A.S. Usikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, I.L. Krestnikov, M.V. Baidakova, Yu.G. Musikhin, V.V. Ratnikov, N.N. Ledentsov, Zh.I. Alferov, A. Hoffmann, D. Bimberg                    Characterization of the InGaN/GaN heterostructures grown by MOCVD in argon ambient                    Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 57 (1999)
659            D. Huhse, D. Bimberg                    Competing mode suppression ratio of electrically wavelength tunable self-seeded lasers                    IEEE Photon. Technol. Lett. 11, 167 (1999)
660            A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, Yu.M. Shernyakov, S.S. Mikhrin, N.A. Maleev, E. Yu. Kondrat’eva, D.A. Livshits, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate                    IEEE Photon. Technol. Lett. 11, 1345 (1999)
661            I.L. Krestnikov, M. Straßburg, M. Caesar, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen                    Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots                    Phys. Rev. B 60, 8695 (1999)
662            A.E. Zhukov, V.M. Ustinov, A.R. Kovsh. A.Yu. Egorov, N.A. Maleev, N.N. Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, Yu.G. Musikhin, N.A. Bert, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov                    Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status                    Semicond. Sci. Technol. 14, 575 (1999)
663            H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch                    Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots                    Appl. Phys. Lett 75, 106 (1999)
664            M.Z. Iqbal, U.S. Qurashi, A. Majid, A. Khan, N. Zafar, A. Dadgar, D. Bimberg                    Deep levels associated with alpha irradiation of n-type MOCVD InP                    Physica B 273, 839 (1999)
665            P. Borri, W. Langbein, J. Mørk, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg                    Dephasing in InAs/GaAs quantum dots                    Phys. Rev. B 60, 7784 (1999)
666            M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, D. Bimberg, Zh.I. Alferov                    Diode lasers based on quantum dots                    in: Advances in <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Physics (Festkörperprobleme), ed. B. Kramer 38, 203 (1999)
667            A. Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg                    Direct evidence of In-enrichment in MOCVD-grown (In,Ga)As/GaAs quantum dots                    Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 171 (1999)
668            E.H. Böttcher, H. Pfitzenmaier, E. Dröge, St. Kollakowski, A. Strittmatter, D. Bimberg                    Distributed wave-guide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation                    Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzer­land</st1:country-region></st1:place>, p. 79 (1999)
669            M.-H. Mao, F. Heinrichsdorff, D. Bimberg                    Dynamic properties of InGaAs quantum dot lasers                    Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 569 (1999)
670            G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, Y.B. Samsonenko, D.V. Denisov, V.M. Busov, B .V. Volovik, V.M. Ustinov, Z.I. Alferov, D. Bimberg, N.D. Zakharov, P. Werner                    Effect of growth conditions on InAs nanoislands formation on Si(100) surface                    Czechoslovak J. of Physics 49, 1547 (1999)
671            V.P. Kalosha, G.YA. <st1:place w:st="on"><st1:city w:st="on">Slepyan</st1:city>, <st1:country-region w:st="on">S.A.</st1:country-region></st1:place> Maksimeko, N.N. Ledentsov, O. Stier, M. Grundmann, D. Bimberg                    Effective-medium approach for active medium of QD laser                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
672            F. Heinrichsdorff, N. Zhakarov, P. Werner, A. Krost, D. Bimberg                    Electroluminescence of stacked In(Ga)As/GaAs QDs at 1.3 µm – 1.4 µm                    41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
673            C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, M. Grundmann, D. Bimberg                    Electron emission from InAs quantum dots                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
674            C.M.A. Kapteyn, F. Heinrichsdorff, O. Stier, R. Heitz, M. Grundmann, N.D. Zakharov, D. Bimberg, P. Werner                    Electron escape from InAs quantum dots                    Phys. Rev. B 60, 14265 (1999)
675            O. Stier, M. Grundmann, D. Bimberg                    Electronic and optical properties of strained quantum dots modeled by 8-band-k•p theory                    Phys. Rev. B 59, 5688 (1999)
676            D. Bimberg, O. Stier, M. Grundmann, C. Ribbat, M.-H. Mao, F. Heinrichsdorff, N.N. Ledentsov                    Electronic properties of self-organized quantum dots                    Workbook 12. Deutsch-Japanisches Forum Informationstechnologie, Dresden, Germany (1999)
677            O. Reimann, D. Huhse, E. Dröge, E.H. Böttcher, D. Bimberg, H.D. Stahlmann                    Electrooptical sampling using 1.55-µm self-seeded semiconductor laser with soliton pulse compression                    IEEE Photonics Techn. Lett. 11, 1024 (1999)
678            R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, D. Bimberg                    Enhanced polar exciton-LO-phonon interaction in quantum dots                    Phys. Rev. Lett. 83, 4654 (1999)
679            R. Heitz, I. Mukhametzhanov, J. Zeng, P. Chen, A. Madhukar, D. Bimberg                    Excitation transfer in novel self-organized quantum dot structures                    Superlattices and Microstructures 25, 97 (1999)
680            A.F.Tsatsul'nikov, B.V. Volovik, N.N. Ledentsov, M.V. Maksimov, A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, P.S. Kop'ev, Zh.I. Alferov, I.E. Kozin, M.V. Belousov, D. Bimberg abstract Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host                    Semiconductors 33, 467 (1999)
681            J. L. Spithoven, J. Lorbacher, I. Manke, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch                    Finite linewidth observed in photoluminescence spectra of individual In0.4Ga0.6As quantum dots                    J. Vac. Sci. Technol. B 17, 1632 (1999)
682            A.F. Tsatsul’nikov, A.Yu Egrov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, N.A. Bert, V.M. Ustinov, B.V. Volovik, A.E. Zhukov,  Zh.I. Alferov, G.E. Cirlin, A.O. Golubok, S.A. Masalov, V.N. Petrov, N.N. Ledentsov, R. Heitz, M. Grundmann, D. Bimberg, I.P. Soshnikov                    Formation of InAs quantum dots in a silicon matrix                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
683            A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N.Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov, V.I. Kopchatov, A.V. Lunev, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov                    Gain characteristics of quantum dot injection lasers                    Semicond. Sci. Technol. 14, 118 (1999)
684            A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, A.Yu. Egorov, N.N.Ledentsov, A.F. Tsatsul’nikov, M.V. Maximov, S.V. Zaitsev, Yu.M. Shernyakov,  A.V. Lunev, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg abstract Gain characteristics of quantum-dot injection lasers                    Semiconductors 33, 1013 (1999)
685            D. Huhse, O. Reimann, E.H. Böttcher, D. Bimberg                    Generation of 290 fs laser pulses by self-seeding and soliton compression                    Appl. Phys. Lett. 75, 2530 (1999)
686            D. Huhse, C. Warmuth, M. Schulze, D. Bimberg                    Generation of short, wavelength tunable semiconductor laser pulses                    Proc. SPIE’s Intern. Symp. Optoelectronics 99 (Photonic West), <st1:place w:st="on"><st1:city w:st="on">San Jose</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place> (1999)
687            A..E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, V.M. Ustinov, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, E.Cu. Kondrat'eva, Yu.M. Shernyakov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg                    Ground and excited state lasing near 1.3-µm from self-assembled quantum dots on GaAs substrates                    Digest of the LEOS Summer Topical Meetings, p. 127 (1999)
688            A. Strittmatter, A. Krost, J. Bläsing, P. Veit, J. Christen, D. Bimberg                    Growth and characterization of MOCVD grown GaN layers on Si(111)substrates                    Proc. Mat. Res. Soc. Symp., Boston, USA (1999)
689            G.E. Cirlin, V.N . Petrov, V.G. Dubrovskii, Yu.B. Samsonenko, .K. Polyakov, A.O. Golubok, S.A. Masalov, N.I. Komyak, V.M. Ustinov, A.Yu. Egorov, A.R. Kosvh, M.V. Maximov, A.F. Tsatsul'nikov, V.B. Volovik, A.E. Zhukov, P.S. Kop'ev, N.N. Ledentsov, Zh.I. Al abstract Heteroepitaxial growth of InAs on Si: a new type of quantum dot                    Semiconductors 33, 972 (1999)
690            V.M. Ustinov, A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, I.S. Tarasov, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    High output power CW operation of a uantum dot laser                    Proc. 26th Intern. Symp. Compounds of Semiconductors, Inst. Phys. Conf. Ser. No 166, 277 (1999)
691            A. Strittmatter, A. Krost, J. Bläsing, D. Bimberg                    HIgh quality GaN layers grown by metalorganic chemical vapor deposition on Si(111) substrates                    phys. stat. sol. (a) 176, 611 (1999)
692            R. Heitz, I. Mukhametzhanov, H. Born, M. Grundmann, A. Hoffmann, A. Madhukar, D. Bimberg                    Hot carrier relaxation in InAs/GaAs quantum dots                    Physica B 272, 8 (1999)
693            G. Unterbörsch, Th. Engel, D. Rohde, M. Rohde, D. Bimberg, G. Grosskopf                    Hybrid and monolithic integrated optic/millimeter-wave converters for 60 GHz radio-over-fiber systems                    Optical Fiber Communication Conf, 1999, and the Intern. Conf. on Integrated Optics and Optical Fiber Communication OFC/IOOC'99, Technical Digest 1, 117 (1999)
694            Krost, J. Bläsing, F. Heinrichsdorff, D. Bimberg                    In enrichment in (In,Ga)As/GaAs Quantum Dots studied by high-resolution X-ray diffraction and pole figure analysis                    Appl. Phys. Lett. 75, 2957 (1999)
695            E.H. Böttcher, T. Pirk, H. Pfitzenmaier, F. Heinrichsdorff, D. Bimberg                    InAs/GaAs quantum dots: a material for very high-speed, long-wavelength photodetectors on GaAs                    Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 327 (1999)
696            V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, A.V. Lunev, B.V. Volovik, I.L. Krestnikov, Yu.G. Musikhin, N.A. Bert, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg                    InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 µm                    Appl. Phys. Lett. 74, 2815 (1999)
697            A.F. Tsatsul’nikov, B.Ya. Ber, A.P. Kartashova, Yu.A. Kudravtsev, N.N. Ledentsov, W.V. Lundin, M.V. Maximov, A.V. Sakharov, A.S. Usikov, Zh.I. Alferov, A. Hoffmann, D. Bimberg                    Incorporation of As in GaN layers during MOCVD growth                    Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city> , p. 41 (1999)
698            N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg, V.P. Kalosha, J.A. Lott, A.O. Kosogov, P. Werner                    Influence of gain spectrum on cavity modes in quantum dot vertical cavity lasers                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>  (1999)
699            N.A. Maleev, A.E. Zhukov, A.R. Kovsh, A.Yu. Egorov, V.M. Ustinov, I.L. Krestnikov, A.V. Lunev, A.V. Sakharov, B.V. Volovik, N.N. Ledentsov, P.S Kop'ev, Zh.I. Alferov, D. Bimberg abstract InGaAs/GaAs structures with quantum dots in vertical optical cavitites for wavelength near 1.3 µm                    Semiconductors 33, 586 (1999)
700            W. Schlaak, Th. Engel, A. Umbach, W. Passenberg, A. Seeger, R. Steingrüber, C. Schramm, G.G. ekonnen. G. Unterbörsch, H.G. Bach,  D. Bimberg                    InP-based OEIC fabrication technology for 40 Gbit/s broadband and 38 / 60 GHz narrowband photoreceivers                    Proc. 26th Intern. Symp. on Compound Semiconductors Inst. Phys. Conf. Ser. No 166, 399 (1999)
701            O. Stier, M. Grundmann, D. Bimberg                    Inter- and intraband transitions in strained quantum dots modeled in eight-band k•p theory                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
702            N.N. Ledentsov, D. Bimberg, V.M. Ustinov, M.V. Maximov,  Zh.I. Alferov, V.P. Kalosha, J.A. Lott                    Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser                    Semiconductor Science and Technology 14, 99 (1999)
703            N.N. Ledentsov, A.F. Tsatsul’nikov, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, M.V. Maximov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, I.L. Krestnikov, D. Bimberg, A. Hoffmann                    Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer super­lattices                    Appl. Phys. Lett. 74, 161 (1999)
704            A.R. Kovsh, A,E, Zhukov, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov, M.V. Maksimov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, E.Yu. Kontrat’eva, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures                    Semiconductors 33, 929 (1999)
705            M.V. Maximov, Yu.M. Shernyakov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, I.N. Kaiander, N.N. Ledentsov, A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    Lasing from quantum dots formed by activated alloy spinodal decomposition on InAs stressors                    Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 135 (1999)
706            B.V. Volovik, A.Yu. Egorov, P.S. Kop’ev, A.R. Kovsh, I.E. Kozin, I.L. Krestnikov, M.V. Maximov, A.V. Sakharov, A.F. Tsatsul’nikov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, M. Strassburg, A. Hoffmann, D. Bimberg, I.P. Soshnikov, P. Werner                    Lasing in structures with InAs submonolayer insertions in an AlGaAs matrix without external optical confinement                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
707            B.V. Volovik, A.F. Tsatsul’nikov, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maksimov, N.A. Maleev, Yu.G. Musikhin, A.A. Suvorova, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg, P. Werner                    Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands                    Seminconductors 33, 901 (1999)
708            A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, V.M. Ustinov, A.F. Tsatsul’nikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, Yu.M. Shernyakov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg                    Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates                    Appl. Phys. Lett. 75, 1926 (1999)
709            O. Reimann, D. Huhse, E.H. Böttcher, D. Bimberg, H.D. Stahlmann                    Low jitter dual semiconductor laser system using electrical phase shift for fast temporal scanning in time-resolved pump and probe experiments                    Proc. CLEO, Pacific Rim '99 W13, 203 (1999)
710            A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, NN.A. Maleev, S.S. Mikhrin, Yu.M. Shernyakov,  A.F. Tsatsul’nikov, M.V. Maximov, B.V. Volovik, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg                    Low threshold lasing in 1.3 µm range in the structure based on InAs/InGaAs quantum dots                    Proc. Intern. Symp. on Compound Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Berlin</st1:city>, <st1:country-region w:st="on">Germany</st1:country-region></st1:place> , Th A3.3 (1999)
711            Strittmatter, A. Krost, M. Straßburg, V. Türck, D. Bimberg, J. Bläsing, J. Christen                    Low-pressure metal organic chemical vapor depostion of GaN on silicon(111) substrates using an AlAs nucleation layer                    Appl. Phys. Lett. 74, 1242 (1999)
712            Strittmatter, A. Krost, V. Türck, M. Straßburg, D. Bimberg, J. Bläsing, T. Hempel, J. Christen, B. Neubauer, D. Gerthsen, T. Christmann, B.K. Meyer                    LP-MOCVD growth of GaN on silicon substrates – comparison between AlAs and ZnO nucleation layers                    Mat. Sci. Eng. B 59, 29 (1999)
713            M. v. Ortenberg, H. Wißmann, L. Parthier, K. Uchida, N. Miura, F. Heinrichsdorff, D. Bimberg                    Magneto condensation and probing of nanostructures by high magnetic fields                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
714            H. Born, A.R. Goni, R. Heitz,  A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg                    Magnetoluminescence of annealed self-organized InGaAs/GaAs quantum dots                    phys. stat. sol. (b) 215, 313 (1999)
715            M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov,  P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner                    Middle infrared emission from InAs quantum dots in a GaAs matrix                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>  (1999)
716            M. Grundmann, R. Heitz, D. Bimberg, J.H.H. Sandmann, J. Feldmann                    Modeling of quantum dot optical properties using micro-states                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>  (1999)
717            A.R. Kovsh, A.E. Zhukov, A.Yu. Egorov, V.M. Ustinov, Yu.M. Shernyakov, M.V. Maximov, B.V. Volovik, A.F. Tsatsul’nikov, Yu.G. Musikhin, N.N. Ledentsov, P.S. Kop’ev, D. Bimberg, Zh.I. Alferov                    Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers                    J. Crystal Growth 201/202, 1117 (1999)
718            M. Straßburg, U.W. Pohl, D. Bimberg                    MOVPE-grown ZnMgCdSe structures on InP                    Proc. EW MOVPE VIII, <st1:city w:st="on"><st1:place w:st="on">Prague</st1:place></st1:city>, p. 115 (1999)
719            V. Türck, D. Bimberg                    Nanotechnology in optoelectronics: trends and prospects                    mst news, intern. newsletters on microsystems, 17 (1999)
720            Th. Engel, G. Unterbörsch, R. Hübsch, G.G. Mekonnen, D. Bimberg                    Noise and nonlinearity of monolithic 38 GHz photoreceiver for OPTIC/mm-wave conversion                    Proc. European Conference on Optical Communication, ECOC’99, Nice. <st1:country-region w:st="on"><st1:place w:st="on">France</st1:place></st1:country-region>  (1999)
721            M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.Yu. Egorov, A.E. Zhukov, A.R. Kovsh, N.A. Bert, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, I.P. Soshnikov, P. Werner                    Optical and structural properties of InAs quantum dots in a GaAs matrix for a sprectral range up to 1.7 µm                    Appl. Phys. Lett. 75, 2347 (1999)
722            P. Yu, W. Langbein, K. Leosson, J.M. Hvam, N.N. Ledentsov, D. Bimberg, V. M. Ustinov, A.Yu. Egorov, A.E. Zhukov                    Optical anisotropy in vertically coupled quantum dots                    Phys. Rev. B 60, 16680 (1999)
723            R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. Soshnikov, P. Werner, U. Gösele                    Optical properties of InAs quantum dots in a Si matrix                    Appl. Phys. Lett. 74, 1701 (1999)
724            A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg                    Optical properties of structures with single and multiple InGaN  insertions in a GaN matrix                    phys. stat. sol. (b) 216, 435 (1999)
725            M.V. Maximov, D.A. Bedarev, A.Yu Egorov, P.S. Kop’ev, A.R. Kovsh, A.V. Lunev, Yu.G. Musikhin, Yu.M. Shernyakov, A.F. Tsatsul’nikov, V.M. Ustinov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg                    Optimization of quantum dot lasers by seeding of quantum dots                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city> (1999)
726            L. Köhne, A. Dadgar, D. Bimberg, M. Zafar Iqbal, U.S. Qurashi, T. Grunde­mann,H. Schumann                    Osmium related deep levels in indium phosphide                    phys. stat. sol. (a) 171, 521 (1999)
727            I.L. Krestnikov, W.V. Lundin, A.V. Sakharov., V.A. Semenov, A.S. Usikov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N . Ledentsov, A. Hoffmann, D. Bimberg                    Photopumped InGaN/GaN/AlGaN vertical cavity surface emitting laser operating at room temperature                    phys. stat. sol. (b) 216, 511 (1999)
728            G.Ya. Slepyan, S.A. Maksimenko, V.P. Kalosha, J. Herrmann, N.N. Ledentsov, I.L. Krestnikov, Zh.I. Alferov, D. Bimberg                    Polarization splitting of the gain band in quantum wire and quantum dot arrays                    Phys. Rev. B59, 12275 (1999)
729            D. Bimberg                    QD lasers up to and beyond 1300 nm                    Digest of the LEOS Summer Topical Meetings, 17 (1999)
730            M. Grundmann, F. Heinrichsdorff, C. Ribbat, M.-H. Mao,  D. Bimberg                    Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation                    Appl. Phys. B 69, 413 (1999)
731            M. Straßburg, R. Engelhardt, R. Heitz, U.W. Pohl, S. Rodt, V. Türck, A. Hoffmann, D. Bimberg, I.L. Krestnikov, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen                    Quantum dots formed by ultrathin CdSe-ZnSe insertions                    Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 13 (1999)
732            D. Bimberg                    Quantum dots: paradigm changes in semiconductor physics                    semiconductors 33, 951 (1999)
733            A.R. Kovsh, D.A. Livshits, A.E. Zhukov, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, I.S. Tarasov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg abstract Quantum-dot injection heterolaser with 3.3 W output power                    Tech. Phys. Lett. 25, 438 (1999)
734            G. Sek, J. Misiewicz, K. Ryczko, M. Kubisa, F. Heinrichsdorff, O. Stier, D. Bimberg                    Room temperature photoreflectance of MOCVD-grown InAs/GaAs quantum dots                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Communications 110, 657 (1999)
735            P. Borri, W. Langbein, J. Mork, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, D. Bimberg                    Room-temperature dephasing in InAs/GaAs quantum dots                    Proc. CLEO/QUELS’99, Baltimore Convention Center, Baltimore, USA, 46 (1999)
736            R. Engelhardt, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen                    Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures                    J. Appl. Phys. 86, 5578 (1999)
737            I.L. Krestnikov, W.V. Lundin, A.V. Sakharov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg                    Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser                    Appl. Phys. Lett. 75, 1192 (1999)
738            van Gelen, J.J.M. Binsma, T. van Dongen, A. van Leerdam, A. Dadgar, D. Bimberg, O. Stenzel, H. Schumann                    Ruthenium doped high power 1.48 µm SIPBH Laser                    Proc. 11th Indium Phosphide and Related Materials (IPRM’99), <st1:place w:st="on"><st1:city w:st="on">Davos</st1:city>, <st1:country-region w:st="on">Switzerland</st1:country-region></st1:place>, p. 203 (1999)
739            V.A. Shchukin, D. Bimberg                    Self-ordering in multisheet arrays of 2D strained islands                    Thin  Solid Films 357, 66 (1999)
740            A.Yu. Egorov, A.R. Kovsh, V.M. Ustinov, A.E. Zhukov, M.V. Maksimov, G.E. Cirlin, N.N. Ledentsov, D. Bimberg, P. Werner, Zh.I. Alferov                    Self-organized InAs quantum dots in a silicon matrix                    J. Cryst. Growth 201/202, 1202 (1999)
741            E. Martinet, M.-A. Dupertuis,  E. Kapon, O. Stier, M. Grundmann, D. Bimberg                    Separation of Strain and Confinement Effects in the Photoluminescence Excitation Spectra of InGaAs/AlGaAs V-Groove Quantum Wires                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>  (1999)
742            M.V. Maximov, Yu.M. Shernyakov, I.N. Kaiander, D.A. Bedarev, E.Yu. Kondrat'eva, P.S. Kop’ev, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, A.F. Tsatsul'nikov, V.M. Ustionov, B.V. Volovik, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg                    Single transverse mode operation of long wavelength (~1.3 µm)InAsGaAs quantum dot laser                    Electronics Lett. 35, 2038 (1999)
743            D. Bhattacharyya, E.A. Avrutin, A.C. Bryce, J.M. Gray, J.H. Marsh, D. Bimberg, F. Heinrichsdorff, V.M. Ustinov, S.V. Zaitsev, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, A.I. Onishchenko, E.P. O’Reilly                    Spectral and dynamic properties of InAs/GaAs self-organized quantum dot lasers                    IEEE J. Quantum El. 5, 648 (1999)
744            V.A. Shchukin, D. Bimberg                    Spontaneous ordering of nanostructures on crystal surfaces                    Rev. of  Modern Physics 71, 1125 (1999)
745            N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg                    Structural studies of stacked InAs quantum dots in a Silicon matrix grown by MBE                    41st Electronic Materials Conference, <st1:place w:st="on"><st1:city w:st="on">Santa Barbara</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>  (1999)
746            N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg                    Structure of InAs quantum dots in Si matrix investigated by high resolution electron microscopy                    Proc. 7th Intern. Symp. Nanostructures: Physics and Technology, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> , p. 216 (1999)
747            N.D. Zakharov, P. Werner, V.M. Ustinov, G.E. Cirlin, O.V. Smolski, D.V. Denisov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. Bimberg                    Structure of stacked InAs quantum dots in a Si matrix: HRTEM experimental results and modelling                    Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 216 (1999)
748            A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, N.N. Ledentsov, A.F. Tsatsul’nikov,  Zh.I. Alferov, A. Hoffmann, D. Bimberg                    Surface-mode lasing from optically pumped InGaN/GaN heterostructures                    Proc. of the 7th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 124 (1999)
749            A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, V.A. Semenov, A.S. Usikov, A.F. Tsatsul’nikov, Yu.G. Musikhin, M.V. Baidakova, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg                    Surface-mode lasing from stacked InGaN insertions in a GaN matrix                    Appl. Phys. Lett. 74, 3921 (1999)
750            Umbach, Th. Engel, H.-G. Bach, S. v. Waasen, E. Dröge, A. Strittmatter, W. Ebert, W. Passenberg, R. Steingrüber, W. Schlaak, G.G. Mekonnen, D. Bimberg, G. Unterbörsch                    Technology of InP-based 1.55 µm ultrafast OEMMICs: 40 Gbit/s broadband and 38 / 60 GHz narrow-band photoreceivers                    IEEE J. Quantum El. 35, 1024 (1999)
751            R. Heitz, I. Mukhametzhanov, A. Madhukar, A. Hoffmann, D. Bimberg                    Temperature-dependent optical properties of self-organized InAs/GaAs quantum dots                    J. Elec. Mat. 28, 520 (1999)
752            H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, M. Dähne-Prietsch                    The stoichiometry of InAs quantum dots determined by cross-sectional scanning tunneling microscopy                    phys. stat. sol. (b) 215, 865 (1999)
753            M. Straßburg, R. Heitz, V. Türck,  S. Rodt, U.W. Pohl, A. Hoffmann, D. Bimberg, L.L. Krestnikow, V.A. Shchukin, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen                    Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices                    J. El. Mat. 28, 506 (1999)
754            P. Borri, W. Langbein, J.M. Hvam, M.-H. Mao, F. Heinrichsdorff, D. Bimberg                    Ultrafast dynamics in InAs/GaAs quantum dot amplifiers                    in: Conf. on Lasers and Electro-Optics, OSA Techn. Digest, Washington DC, USA, 321 (1999)
755            P. Borri, W. Langbein, J. Mørk, J.V. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg                    Ultrafast gain and index dynamics in InAs/InGaAs quantum dot amplifiers                    Proc. 25th European Conference on Optical Communication, ECOC’99, Techn. Digest, 74 (1999)
756            I.L. Krestnikov, M. Strassburg, M. Caesar, V.A. Shchukin, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, V.G. Malyshkin, P.S. Kop’ev, Zh.I. Alferov, D. Litvinov, Rosenauer, D. Gerthsen                    Vertical arrangement and wavefunction control in structures with 2d quantum dots                    Proc. 24th Intern. Conf. on the Physics of Semiconductors, <st1:city w:st="on"><st1:place w:st="on">Jerusalem</st1:place></st1:city>, p. 71 (1999)
757            A.Krost, F.Heinrichsdorff, D.Bimberg, J.Bläsing, A.A.Darhuber, G.Bauer                    X-ray analysis of self-organized InAs/InGaAs quantum dot structure                    Cryst. Res. Techn. 34, 89 (1999) 758           S.S. Mikhrin, A.E. Zhukov,. A.R. Kovsh, N.A. Maleev, V.M. Ustinov, Yu.M. Shernyakov, I.P. Soshnikov, D.A. Livshits, I.S. Tarasov, D.A. Bedarev, B.V. Volovik, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov abstract 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots                    Semicond. Sci. Technol. 15, 1061 (2000)
759            N.N. Ledentsov, M.V. Maximov, D. Bimberg, T. Maka, C.M. Sotomayor Torres, I.V. Kochnev, I.L. Krestnikov, V.M. Lantratov, N.A. Cherkashin, Yu.M. Musikhin, Zh.I. Alferov                    1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition                    Semicond. Sci. Technol. 15, 604 (2000)
760            A.E. Zhukov, A.R. Kovsh, V.M. Ustinov, D.A. Livshits, N.N. Ledentsov, P.S. Kop’ev, Zh.I. Alferov, D. Bimberg                    3.5 W continuous wave operation from quantum dot laser                    Mat. Scie. Eng. B 74, 70 (2000)
761            M. Strassburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude,. D. Hommel, S. Itoh, K. Nakano, A. Ishibashi                    A new approach to improved green emitting II-VI laser diodes                    Conf. Digest 17th Intern. Semiconductor Laser Conf., 25-28 Sep, p. 1053 (2000)
762            S.S. Mikhrin, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, V.M. Ustinov, Yu.M. Shernyakov, I.N. Kayander, E.Yu. Kondrat'eva, D.A. Livshits, U.S. Tarasov, M.V. Maksimov, A.F. Tsatsul'nikov, N.N. Ledentsov, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov abstract A spatially single-mode laser for a range of 1.25 < 1.28 µm on the basis of InAs quantum dots on a GaAs substrate                    Semiconductors 34, 119 (2000)
763            O. Stier, A. Schliwa, R. Heitz, M. Grundmann, D. Bimberg                    Biexciton binding energy in InAs/GaAs quantum dots - a local probe for the dot geometry                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1265 (2000)
764            D. Bimberg, N.N. Ledentsov                    Birth of quantum dot devices: Paradigm changes                    Semiconductor News 9, 37 (2000)
765            R. Wetzler, A. Wacker, E. Schöll, C.M.A. Kapteyn, R. Heitz, D. Bimberg                    Capacitance-voltage characteristics of self-organized InAs/GaAs quantum dots embedded in a pn structure                    Appl. Phys. Lett. 77, 1671 (2000)
766            R. Wetzler, C.M.A. Kapteyn, R. Heitz, A. Wacker, E. Schöll, D. Bimberg                    Capacitance-voltage characteristics of self-organized quantum dots embedded in a pn junction                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1093 (2000)
767            C.M.A. Kapteyn, M. Lion, F. Heinrichsdorff, R. Heitz, M. Grundmann, D. Bimberg                    Carrier Emission Processes in InAs Quantum Dots                    Physica E 7, 388 (2000)
768            C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P. Brunkov, B. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov                    Carrier escape and level structure of InAs/GaAs quantum dots                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1045 (2000)
769            M.V. Maximov, A.F. Tsatsul'nikov, D.S. Sizov, Yu.M. Shernyakov,  A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres                    Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation                    Nanotechnology 11, 309 (2000)
770            U.W. Pohl, Matthias Straßburg, Martin Straßburg, I.L. Krestnikov, R. Engelhardt, S. Rodt, D. Bimberg                    CdSe/ZnSSe quantum islands grown by MOVPE on homoepitaxial GaAs buffers                    J. Cryst. Growth 214/215, 717 (2000)
771            V . Türck, S. Rodt, R. Heitz, O. Stier, M. Straßburg, U.W. Pohl, D. Bimberg                    Charged excitons and biexcitons in self-organized CdSe quantum dots                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1369 (2000)
772            M. Strassburg, Th. Deniozou, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, K. Lischka, D. Schikora                    Coexistence of Planar and Three-dimensional Quantum Dots in CdSe/ZnSe Structures                    Appl. Phys. Lett. 76, 685 (2000)
773            P. Borri, W. Langbein, J.M. Hvam, D. Bimberg                    Coherent versus incoherent dynamics in InAs quantum dots: The role of elastic dephasing                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1221 (2000)
774            C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P.N. Brunkov, B.V. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov                    Comparison of hole and electron emission from InAs quantum dots                    Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 375 (2000)
775            A.R. Goni, A. Cantarero, H. Scheel, S. Reich, C. Thomsen, P.V. Santos, F. Heinrichsdorff, D. Bimberg                    Different temperature renormalizations for heavy and light-hole states of monolyer-thick heterostructures                    <st1:place w:st="on"><st1:placename w:st="on">Solid</st1:placename> <st1:placetype w:st="on">State</st1:placetype></st1:place> Communications 116, 121 (2000)
776            A.V. Sakharov, W.V. Lundin, I.L. Krestnikov, E.E. Zavarin, A.S. Usikov, A.F. Tsatsul'nikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, Zh.I. Alferov                    Effect of annealing on phase separation in ternary III-N alloys                    Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 216 (2000)
777            L.V. Asryan, M. Grundmann, N.N. Ledentsov, O. Stier, R.A. Suris, D. Bimberg abstract Effect of excited-state transitions on the threshold characteristics of a quantum dot laser                    Proc. SPIE, Physics and Simulation of Optoelectronic Devices VIII 3944, 823 (2000)
778            V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U.W. Pohl, D. Bimberg                    Effect of random field fluctations on excitonic transitions of individual CdSe quantum dots                    Phys. Rev. B 61, 9944 (2000)
779            A. Weber, K. Goede, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov                    Electrically and optically pumped mid-infrared emission from quantum dots                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1157 (2000)
780            <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, G.Ya. Slepyan, V.P. Kalosha, S.V. Maly, N.N. Ledentsov, J. Herrmann, A. Hoffmann, D. Bimberg, Zh.I. Alferov                    Electromagnetic response of 3D arrays of quantum dots                    J. Elec. Mat. 29, 494 (2000)
781            M. Grundmann, O. Stier, A. Schliwa, D. Bimberg                    Electronic structures of cleaved-edge-overgrowth strain induced quantum wires                    Phys. Rev. B 61, 1744 (2000)
782            C.M.A. Kapteyn, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, G. abstractreiter                    Fermi-filling of Ge quantum dots in Si                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1053 (2000)
783            I.L. Krestnikov, N.N. Ledentsov, M.V. Maximov, D. Bimberg, D.A. Bedarev, I.V. Kochnev,  V.M. Lantratov, N.A. Cherkashin, Yu.G. Musikhin, Zh.I. Alferov                    Formation of defect-free InGaAs-GaAs quantum dots for 1.3 µm spectral range grown by metal-organic chemical vapor deposition                    Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place> , p. 355 (2000)
784            A.F. Tsatsul'nikov, I.L. Krestnikov, V.W. Lundin, A.V. Sakharov, D.A. Bedarev, A.S. Usikov, Zh.I. Alferov, B.Ya. Ber, V.V. Tret'yakov, Zh.I. Alferov, N.N. Ledentsov,  A. Hoffmann, D. Bimberg, T. Riemann, J. Christen, Yu.G. Musikhin, L.P. Soshnikov, D. Lit                    Formation of GaAsN nanoinsertions in a GaN matrix                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 395 (2000)
785            A.F. Tsatsul'nikov, I.L. Krestnikov, V.W. Lundin, A.V. Sakharov, A.P. Kartashova, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Strittmatter, A. Hoffmann, D. Bimberg, I.P. Soshnikov, D. Litvinov, A. Rosenauer, D. Gerthsen, A. Plaut abstract Formation of GaAsN  nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition                    Semicond. Sci. Technol. 15, 766 (2000)
786            M.V. Maximov, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg                    GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report                    J. Elec. Mat. 29, 476 (2000)
787            G.E. Cirlin, N.K. Polyakov, V.N. Petrov, V.A. Egorov, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, .N.N. Ledentsov, . Heitz, D. Bimberg, N.D. Zakharov, P. Werner, U. Gösele                    Heteroepitaxial growth of InAs on Si: The new Type of quantum dots                    Mater. Phys. Mech. 1, 15 (2000)
788            D. Bimberg                    High power quantum dot lasers                    Conf. Digest of Lasers and Electro-Optics Europe 2000, 10-15 Sep, 1 (2000)
789            F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, D. Bimberg                    High power quantum dot lasers at 1100 nm                    Appl. Phys. Lett. 76, 556 (2000)
790            Ch. Ribbat, R. Sellin, M. Grundmann, D. Bimberg                    High power quantum dot lasers at 1140 nm                    17th Intern. Semiconductor Laser Conf. 2000, Conf. Digest 2000, IEEE, p. 131 (2000)
791            C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, P.N. Brunkov, B.V. Volovik, S.G. Konnikov, A.R. Kovsh, V.M. Ustinov                    Hole and electron emission from InAs quantum dots                    Appl. Phys. Lett. 76, 1573 (2000)
792            G.E. Cirlin, V.A. Egorov, V.N. Petrov, A.O. Golubok, N.I. Komyak, N.K. Polyakov, Yu.B. Samsonenko, D.V. Denisov, B.V. Volovik, V.M. Ustinov, Zh.I. Alferov, N.N. Ledentsov, R. Heitz, D. <st1:place w:st="on"><st1:city w:st="on">Bimberg</st1:city>, <st1:state w:st="on">N.D.</st1:state></st1:place> Zakharov, P. Werner, U. Gösele                    InAs nanostructures in a silicon matrix: Growth and properties                    Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 51 (2000)
793            J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg                    InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm                    Electronics Lett. 36, 1384 (2000)
794            A.B. Sakharov, W.V. Lundin, I.L. Krestnikov, D.A. Bedarev, A.F. Tsatsul'nikov, A.S. Usikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg                    Influence of growth interruptions and gas ambient on optical and structural properties of InGaN/GaN multilayer structures                    Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, p. 241 (2000)
795            A.S. Usikov, W.V.Lundin, D.A. Bedarev, E.E. Zavarin, A.F. Sakharov, A.F. Tsatsul'nikov, Zh.I. Alferov, N.N. Ledentsov, A. Hoffmann, D. Bimberg                    Influence of the thick GaN buffer growth conditions on the electroluminescence properties of GaN/InGaN multilayer heterostructures                    Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, p. 875 (2000)
796            M.V. Maximov, I.L. Krestnikov, Yu.M. Shernyakov, A.E. Zhukov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, Zh.I. Alferov, A.Yu. Chernyshov, N.N. Ledentsov, D. Bimberg, T. Maka, C.M. Sotomayor Torres                    InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices                    J. Elec. Mat. 29, 487 (2000)
797            A. Dadgar, J. Christen, S. Richter, F. Bertram, A. Diez, J. Bläsing, A. Krost, A. Strittmatter, D. Bimberg, A. Alam, M. Heuken                    InGaN blue light emitter grown on Si(111) using an AlAs seed layer                    Proc. Intern. Workshop on Nitride Semiconductors IPAP Conf. Series 1, 845 (2000)
798            D. Schikora, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg                    Investigations on the formation kinetics of CdSe quantum dots                    J. Cryst. Growth 214/215, 698 (2000)
799            D. Schikora, S. Schwedhelm, D.J. As, K. Lischka, D. Litvinov, A. Rosenauer, D. Gerthsen, M. Strassburg, A. Hoffmann, D. Bimberg                    Investigations on the Stranski-Krastanov growth of CdSe quantum dots                    Appl. Phys. Lett. 76, 418 (2000)
800            D. Bimberg, M. Grundmann                    Kleine Teilchen - große Wirkung                    GEO 5, 205 (2000)
801            I.L. Krestnikov, A.V. Sakharov, V.W. Lundin, Yu.G. Musikhin, A.P. Kartashova, A.S. Usikov, A.F. Tsatsul'nikov, N. N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, E. Hahn, B. Neubauer, A. Rosenauer, D. Litvinov, D. Gerthsen, A.C. Plaut, A.A. Hoffmann, D. Bimberg abstract Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots                    Semiconductors 34, 481 (2000)
802            I.L. Krestinikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul’nikov, N.N. Ledentsov, Zh.I. Alferov, I.P. Soshnikov, D. Gerthsen, A.C. Plaut, A. Hoffmann, D. Bimberg                    Lasing in vertical direction in structures with InGaN quantum dots                    phys. stat. sol. (a) 180, 91 (2000)
803            Matthias Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude, D. Hommel                    Lateral-index guided ZnCdSSe-based lasers                    J. Cryst. Growth 214/215, 1054 (2000)
804            <st1:country-region w:st="on"><st1:place w:st="on">S.A.</st1:place></st1:country-region> Maksimenko, G.Ya. Slepyan, N.N. Ledentsov, V.P. Kalosha,  A. Hoffmann, D. Bimberg                    Light confinement in a quantum dot                    Semicond. Sci. Technol. 15, 1-6 (2000)
805            V. Türck, S. Rodt, O. Stier, R. Heitz, R. Engelhardt, U.W. Pohl, D. Bimberg                    Line broadening and localization mechanisms in CdSe / ZnSe quantum dots                    J. Luminescence 87-89, 337 (2000)
806            V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, N.A. Maleev, B.V. Volovik, Yu.G. Musikhin, Yu.M. Shernykov, E.Yu. Kondrat'eva, M.V. Maximov, A.F. Tsatsul'nikov, N.N. Ledentsov, Zh.I. Alferov, J.A. Lott, D. Bimberg                    Long wavelength quantum dot lasers on GaAs substrates                    Nanotechnology 11, 397 (2000)
807            V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, A.F. Tsatsul'nikov, M.V. Maximov, B.V. Volovik, D.A. Bedarev, P.S. Kop'ev, Zh.I. Alferov, L.E. Vorob'ev, D.A. Firsov. A.A. Suvorova, I.P. Soshnikov, P. Werner, N.N. Ledentsov, D. Bimberg                    Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates                    Microelectronic J. 31, 1 (2000)
808            M. Strassburg, O. Schulz, U.W. Pohl, D. Bimberg, M. Klude,. D. Hommel                    Low threshold current densities for II-VI lasers                    Electronics Lett. 36, 878 (2000)
809            A.R. Goni, H. Born, R. Heitz, A. Hoffmann, C. Thomsen, F. Heinrichsdorff, D. Bimberg                    Magnetoluminescence study of annealing effects on the electronic structure of self-organized InGaAs/Gaas quantum dots                    Jpn. J. Appl. Phys. 39, 3907 (2000)
810            R. Heitz, F. Guffarth, <st1:place w:st="on">I.</st1:place> Mukhamethzahnov, M. Grundmann, A. Madhukar, D. Bimberg                    Many-body effects on the optical spectra of InAs/GaAs quantum dots                    Phys. Rev. B 62, 16881 (2000)
811            C.M.A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, G. Abstreiter                    Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy                    Appl. Phys. Lett. 77, 4169 (2000)
812            V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, S.S. Mikhrin, Y.G. Musikhin, A.F. Tsatsul'nikov, B.V. Volovik, D.A. Bedarev, M.V. Maximov, D.A. Livshits, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg                    MBE growth, structural and optical characterization of InAs/InGaAlAs self-organized quantum dots                    Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 57 (2000)
813            A.F. Tsatsul'nikov, B.V. Volovik, D. A. Bedarev, A.E. Zhukov, A.R. Kovsh, N.N. Ledentsov, M.V. Maksimov, N.A. Maleev, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S. Kop'ev, D. Bimberg, Zh.I. Alferov   Mechanisms of InGaAlAs solid decomposition stimulated by InAs quantum dots                    Semiconductors 34, 323 (2000)
814            Matthias Straßburg, Martin Straßburg, U.W. Pohl, D. Bimberg                    Metalorganic vapor-phase epitaxy of ZnMgCdSe structures of InP                    J. Cryst. Growth 214/215, 115 (2000)
815            R. Gibis, S. Schelhase, R. Steingrüber, G. Urmann, H. Künzel, S. Thiel, O. Stier, D. Bimberg                    MOMBE selective infill growth of InP/GaInAs for quantum dot formation                    J. Cryst. Growth 209, 499 (2000)
816            M. Meixner, R. Kunert, S. Bose, E. Schöll, V.A. Shchukin, D. Bimberg, E. Penev, P. Kratzer                    <st1:place w:st="on">Monte Carlo</st1:place> simulation of the self-organised growth of quantum dots with anisotropic surface diffusion                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 381 (2000)
817            D. Bimberg, N.N. Ledentsov                    Nano-Optoelectronics: From promise to realization                    Proc. 7th Intern. Symp. on Trends and Applications of Thin Films, TATF‘2000, <st1:place w:st="on"><st1:city w:st="on">Nancy</st1:city>, <st1:country-region w:st="on">France</st1:country-region></st1:place>, March 2000, p. 120 (2000)
818            V.A. Shchukin, N.N. Ledentsov, V.M. Ustinov, Yu.G. Musikhin, V.B. Volovik, A. Schliwa, O. Stier, R. Heitz, D. Bimberg                    New tools to control morphology of self-organized quantum dot nanostructures                    Proc. Mat. Res. Soc. Symp., San Francisco, USA 618, 79 (2000)
819            Martin Straßburg, Th. Deniozou, A. Hoffmann, S. Rodt, V. Türck, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, S. Schwedhelm, I. Kudryashov, K. Lischka, D. Schikora                    Optical identification  of quantum dot types in CdSe/ZnSe structures                    J. Cryst. Growth 214/215, 756 (2000)
820            N.D. Zakharov, P. Werner, U. Gösele, V.M. Ustinov, G.E. Cirlin, B.V. Volovik, N.K. Polyakov, V.N. Petrov, V.A. Egorov, N.N. Ledenstov, Zh.I. Alferov, R. Heitz, D. Bimberg                    Optical properties and structure of Si/InAs/Si layers grown by MBE on Si substrate                    Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 322 (2000)
821            R. Heitz, N.N. Ledentsov, D. Bimberg, A.Yu. Egorov, M.V. Maximov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, G.E. Cirlin, I.P. <st1:place w:st="on"><st1:city w:st="on">Soshnikov</st1:city>, <st1:state w:st="on">N.D.</st1:state></st1:place> Zakharov, P. Werner, U. Gösele                    Optical properties of InAs quantum dots in a Si matrix                    Physica E 7, 317 (2000)
822            B.V. Volovik, A.R. Kovsh, W. Passenberg, H. Kuenzel, Yu.G. Musikhin, V.A. Odnoblyudov, N.N. Ledentsov, D. Bimberg, V.M. Ustinov                    Optical properties of InGaAsN/GaAs quantum well and quantum dot structures for longwavelength emission                    Proc. of the 8th Intern. Symp. ”Nanostructures: Physics and Technology”, <st1:place w:st="on"><st1:city w:st="on">St. Petersburg</st1:city>, <st1:country-region w:st="on">Russia</st1:country-region></st1:place>, p. 148 (2000)
823            M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, N.N. Ledentsov, A.E. Zhukov, A.R. Kovsh, A. Kovsh, N.A. Maleev, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, R. Heitz, D. Bimberg                    Optical properties of quantum dots formed by activated spinodal decomposition of GaAs-based lasers emitting at ~ 1.3 µm                    Microelectronic Engineering 51-52, 61 (2000)
824            M. Grundmann, O. Stier, S. Bognár, C. Ribbat, F. Heinrichsdorff, D. Bimberg                    Optical Properties of Self-organized Quantum Dots: Modelling and Experiments                    phys. stat. sol. (a) 178, 255 (2000)
825            O. Schulz, M. Straßburg, U.W. Pohl, D. Bimberg, A. Itoh, K. Nakano, A. Ishibashi, M. Klude, D. Homel                    Optimised implantation-induced disordering for lowering of the threshold current density of II-VI laser diodes                    phys. stat. sol.(a) 180, 213 (2000)
826            S. Rodt, V. Türck, R. Heitz, M. Straßburg, U.W. Pohl, D. Bimberg                    Phonon-assisted energy transfer from barrier states into quantum dots                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1231 (2000)
827            R. Heitz, I. Mukhametzhanov, O. Stier, A. Madhukar, D. Bimberg                    Phonon-assisted exciton-transitions in self-organized InAs/GaAs quantum dots                    Physica E 7, 398 (2000)
828            A.E. Zhukov, A.R Kovsh, S.S. Mikhrin, N.A. Maleev, V.A. Odnoblyudov, V.M. Ustinov, Yu.M. Shernyakov, E.Yu. Kondrat'eva, D.A. Livshits, IS. Tarasov, N.N. Ledentsov, P.S. Kop'ev, Zh.I. Alferov, D. Bimberg                    Power conversion efficiency of quantum dot laser diodes                    Semiconductors 34, 609 (2000)
829            M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, C. Ribbat, D. Bimberg, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, D.A. Lifshits, V.M. Ustinov, Zh.I. Alferov                    Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications                    Jpn. J. Appl. Phys. 39, 2341 (2000)
830            F. Romstad, P. Borri, J. Moerk, J. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg                    Pulse distortion in a quantum dot amplifier                    Conf. on Lasers and Electro-Optics (CLEO 2000), p. 471 (2000)
831            D. Bimberg, N.N. Ledenstov, R. Sellin, Ch. Ribbat, M. Mao, M. Grundmann, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, Zh.I. Alferov                    Quantum dot lasers                    Proc. LEOS 2000 IEEE 13th Annual Meeting, Rio Grande, Puerto Rico, p. 302 (2000)
832            D. Bimberg, M. Grundmann, F. Heinrichsdorff, N.N. Ledentsov, V.M. Ustinov, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, Y.M. Shernyakov, B.V. Volovik, A.F. Tsatsul'nikov, P.S. Kop'ev, Zh.I. Alferov                    Quantum Dot Lasers: Breakthrough in optoelectronics                    Thin  Solid Films 367, 235 (2000)
833            N.N. Ledentsov, D. Bimberg, V.M. Ustinov, J.A. Lott, Zh.I. Alferov                    Quantum dot lasers: The promises come to reality                    Memoirs of The Institute of Scientific and Industrial Research, <st1:city w:st="on"><st1:place w:st="on">Osaka</st1:place></st1:city> 57, 80 (2000)
834            M.V. Maximov, A.F. Tsatsul’nikov, B.V. Volovik, D.A. Bedarev, A.E. Zhukov, A.R. Kovsh, N.A. Maleev, V.M. Ustinov, P.S. Kop’ev, Zh.I. Alferov, R. Heitz, N.N. Ledentsov, D. Bimberg                    Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors                    Physica E 7, 326 (2000)
835            N.N. Ledentsov, I.L. Krestnikov, M. Straßburg, R. Engelhardt, S. Rodt, R. Heitz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.V. Sakharov, W.V. Lundin, A.S. Usikov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, D. Gerthsen                    Quantum dots formed by ultrathin insertions in wide gap matrices                    Thin  Solid Films 367, 40 (2000)
836            C. Meyne, U.W. Pohl, W. Richter, M. Straßburg, A. Hoffmann, V. Türck, S. Rodt, D. Bimberg, D. Gerthsen                    Quantum island formation in CdS/ZnS heterostructures grown by MOVPE                    J. Cryst. Growth 214/215, 722 (2000)
837            R. Heitz, O. Stier, I. Mukhametzhanov, A. Madhukar, D. Bimberg                    Quantum size effect in self-organized InAs/GaAs quantum dots                    Phys. Rev. B 62, 11017 (2000)
838            N.N. Ledentsov, M. Grundmann, F. Heinrichsdorff, D. Bimberg, V.M. Ustinov, A.E. Zhukov, M.V. Maximov, Zh.I. Alferov                    Quantum-Dot Heterostructure Lasers                    IEEE, J. of Selected Topics in Quant. Electr. 6, 439 (2000)
839            D. Bimberg, N.N. Ledentsov                    Quantum-Dot Lasers: From promise to reality                    Proc. SPIE’s Intern. Symp. Optoelectronics 2000 (Photonic West), <st1:place w:st="on"><st1:city w:st="on">San Jose</st1:city>, <st1:country-region w:st="on">USA</st1:country-region></st1:place>, p. 790 (2000)
840            M. Straßburg, M. Dworzak, A. Hoffmann, R. Heitz, U.W. Pohl, D. Bimberg, D. Litvinov, A. Rosenauer, D. Gerthsen, I. Kudryashov, K. Lischka, D. Schikora                    Resonant gain in ZnSe structures with stacked CdSe islands grown in Stranski-Krastanow mode                    phys. stat. sol. (a) 180, 281 (2000)
841            R. Heitz, H. Born, A. Hoffmann, D. Bimberg, I. Mukhametzhanov, A. Madhukar,                    Resonant Raman scattering in self-organized InAs/GaAs quantum dots                    Appl. Phys. Lett. 77, 3746 (2000)
842            R. Heitz, H. Born, T. Lüttgert, A. Hoffmann, D. Bimberg                    Resonantly excited time-resolved photoluminescence study of self-organized InGaAs/GaAs quantum dots                    phys. stat. sol. (b) 221, 65 (2000)
843            J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg                    Room temperature continuous wave InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm                    Proc. LEOS 2000 IEEE 13th Annual Meeting, <st1:city w:st="on">Rio Grande</st1:city>, <st1:place w:st="on">Puerto Rico</st1:place> , p. 304 (2000)
844            P. Borri, W. Langbein, J. Mørk, J.V. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg                    Room-temperature dephasing in InAs quantum dots                    phys. stat. sol. (a) 178, 337 (2000)
845            D. Bimberg, F. Heinrichsdorff, N.N. Ledentsov, V.A. Shchukin                    Self-organized growth of semiconductor nanostructures for novel light emitters                    Appl. Surf. Sci. 159-160, 1 (2000)
846            E. Martinet, M.-A. Dupertuis, F. Reinhardt, G. Biasiol,  E. Kapon, O. Stier, M. Grundmann, D. Bimberg                    Separation of Strain and Confinement Effects in the Photoluminescence Excitation Spectra of InGaAs/AlGaAs V-Groove Quantum Wires                    Phys. Rev. B 61, 4488 (2000)
847            R. Heitz, H. Born, A. Hoffmann, F. Guffarth, D. Bimberg                    Shape-dependent phonon bottleneck in InGaAs/GaAs quantum dots                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1167 (2000)
848            P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg                    Spectral hole-burning and carrier-heating dynamics in quantum dot amplifiers                    IEEE, J. of Selected Topics in Quant. Electr. 6, 544 (2000)
849            V.A. Shchukin, N.N. Ledentsov, D. Bimberg                    Spontaneous formation of arrays of strained islands: Thermodynamics versus kinetics                    Proc. Mat. Res. Soc. Symp., San Francisco, USA 583, 23 (2000)
850            N.A. Maleev,  A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, D.A. Bedarev, B.V. Volovik, I.L. Krestnikov, I.N. Kayander, V.A. Odnoblyudov, A.A. Suvorova, A.F. Tsatsul'nikov, Yu.M. Shernyakov, N.N. Ledentsov, PlS. Kop'ev, Zh.I. Alferov, D. Bimberg abstract Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range                    Semiconductors 34, 594 (2000)
851            A. Strittmatter, D. Bimberg,  A. Krost, J. Bläsing, P. Veit                    Structural investigation  of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer                    J. Cryst. Growth 221, 293 (2000)
852            N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, B.V. Volovik, Zh.I. Alferov, N.K. Polyakov, V.N. Petrov, V.A.Egorov, G.E. Cirlin                    Structure and optical properties of Si/InAs/Si layers grown by mbe on Si substrate at different temperatures                    Proc. Mat. Res. Soc. Symp., San Francisco, USA 618, 249 (2000)
853            N.D. Zakharov, P. Werner, U. Gösele, R. Heitz, D. Bimberg, N.N. Ledentsov, V.M. Ustinov, B.V. Volovik, Zh.I. Alferov, N.K. Polyakov                    Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate                    Appl. Phys. Lett. 76, 2677 (2000)
854            R. Sellin, F. Heinrichsdorff, Ch. Ribbat, M. Grundmann, U.W. Pohl, D. Bimberg                    Surface flattering during MOCVD of thin GaAs layers covering InGaAs quantum dots                    J. Cryst. Growth 221, 581 (2000)
855            L. Müller-Kirsch, U.W. Pohl, R. Heitz, H. Kirmse, W. Neumann, D. Bimberg                    Thin GaSb insertions and quantum dot formation in GaAs by MOCVD                    J. Cryst. Growth 221, 611 (2000)
856            P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg                    Time-resolved four-wave mixing in InAs/InGaAs quantum-dot amplifiers under electrical injection                    Appl. Phys. Lett. 76, 1380 (2000)
857            M. Straßburg, V. Kutzer, M. Dworzak, A. Hoffmann, R. Heitz, D. Bimberg, I. Kudryashov, K. Lischka, D. Schikora                    Time-resolved studies and high-excitation properties of CdSe/ZnSe quantum dots                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1323 (2000)
858            I.L. Krestnikov, H. Born, T. Lüttgert, R. Heitz,  A.F. Tsatsul'nikov, B.V. Volovik, M.V. Maximov, Yu.G. Musikhin, A.R. Kovsh, N.A. Maleev, A.E. Zhukov, V.M. Ustinov, N.N. Ledentsov, A. Hoffmann, Zh.I. Alferov, D. Bimberg                    Time-resolved studies of large In GaAs/GaAs quantum dots                    Proc. 25th Intern. Conf. on the Physics of Semiconductors, <st1:place w:st="on"><st1:city w:st="on">Osaka</st1:city>, <st1:country-region w:st="on">Japan</st1:country-region></st1:place>, p. 1241 (2000)
859            M.V. Maximov, A.F. Tsatsul'nikov, B.V. Volovik, D.S. Sizov, Yu.M. Shernyskov, I.N. Kaiander, A.E. Zhukov, A.R. Kovsh, S.S. Mikhrin, V.M. Ustinov, Zh.I. Alferov, R. Heitz, V.A. Shchukin, N.N. Ledentsov, D. Bimberg, Yu.G. Musikhin, W. Neumann                    Tuning quantum dot properties by activated phase separation  of an InGa(Al)As alloy grown on InAs stressors                    Phys. Rev. B 62, 16671 (2000)
860            P. Borri, W. Langbein, J.M. Hvam, F. Heinrichsdorff, M.-H. Mao, D. Bimberg                    Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers                    IEEE Photonics Techn. Lett. 12, 594 (2000)
861            Matthias Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, S. Itoh, K. Nakano, A. Ishibashi                    Ultra-low threshold current density ZnCdSe SQW laser fabricated by implantation-induced disordering                    Electronics Lett. 36, 44 (2000)
862            J.A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg                    Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrages emitting at 1.3 µm                    Conf. Digest of 17th Intern. Conf. of Semiconductor Laser Conf., 25-28 Sep, 13 (2000)
863            A.F. Tsatsul'nikov, A.R. Kovsh, A.E. Zhukov, Yu.M. Shernyakov, Yu.G. Musikhin, V.M. Ustinov, N.A. Bert, P.S. Kop'ev, Zh.I. Alferov, A.M. Mintairov, J.L. Merz, N.N. Ledentsov, D. Bimberg                    Volmer-Weber and Stranski-Krastanov InAs-(<st1:place w:st="on"><st1:city w:st="on">Al</st1:city>,<st1:state w:st="on">Ga</st1:state></st1:place>)As quantum dots emitting at 1.3 µm                    J. Appl. Phys. 88, 6272 (2000)
864            Matthias Straßburg, Martin Straßburg, O. Schulz, U.W. Pohl, D. Bimberg, D. Litvinov, D. Gerthsen, M. Schmidtbauer, P. Schäfer                    ZnMgCdSe structures on InP grown by MOVPE                    J. Christ. Growth 221, 416 (2000)

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