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Inhalt des Dokuments

Publikationen 2016

        1. T. Kolbe, J. Stellmach, F. Mehnke, M.-A. Rothe, V. Küller, A. Knauer, S. Einfeldt, T. Wernicke, M. Weyers and M. Kneissl, Efficient carrier-injection and electron-confinement in UV-B light emitting diodes, Phys. Stat. Sol. (a) 213, 210 (2016).
        2. Duc V. Dinh, M. Pristovsek, M. Kneissl, MOVPE growth and indium incorporation of polar, semipolar (112-2) and (202-1) InGaN,  phys. stat. sol. (b) 253 (1), 93 (2016)
        3. Robert A. R. Leute, Junjun Wang, Tobias Meisch, Dominik Heinz, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Jürgen Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Ferdinand Scholz, Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, phys. stat. sol. (b) 253 (1), 180 (2016).
        4. Monir Rychetsky, Ingrid Koslow, Baran Avinc, Jens Rass, Tim Wernicke, Konrad Bellmann, Luca Sulmoni, Veit Hoffmann, Markus Weyers, Johannes Wild, Josef Zweck, Bernd Witzigmann, Michael Kneissl, Determination of Polarization Fields in Group III-Nitride Heterostructures by Capacitance-Voltage-Measurements, Journal of Applied Physics 119 (9), 095713 (2016).
        5. Sabine Alamé, Andrea Navarro Quezada, Daria Skuridina, Christoph Reich, Dimitri Henning, Martin Frentrup, Tim Wernicke, Ingrid Koslow, Michael Kneissl, Norbert Esser, Patrick Vogt, Preparation and Structure of ultra-thin GaN (0001) Layers on  In0.11Ga0.89N-Single Quantum Wells, Materials Science in Semiconductor Processing (2016).
        6. Johannes Glaab, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Christoph Stoelmacker, Viola Kueller, Arne Knauer, Sven Einfeldt,  Markus Weyers, Michael Kneissl, Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs, Proc. of SPIE 9748, 97481O-1 (2016).
        7. A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Weyers and M. Kneissl, Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN, phys. stat. sol. (b) 253 (5), 809-813 (2016).
        8. M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, M. Kneissl, Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes, Appl. Phys. Lett. 108, 151108 (2016).

        9. Albert Minj, Daria Skuridina, Daniela Cavalcoli, Ana Cros, Patrick Vogt, Michael Kneissl, Surface properties of AlInGaN/GaN heterostructures,  Materials Science in Semiconductor Processing (2016), doi:10.1016/j.mssp.2016.04.005

        10. Ji-Hye Kang, Olaf Krüger, Uwe Spengler, Ute Zeimer, Sven Einfeldt, Michael Kneissl, On the formation of cleaved mirror facets of GaN-based laser diodes – a comparative study of diamond tip edge-scribing and laser scribing, Journal of Vacuum Science & Technology B 34, 041222 (2016).
        11. Philipp Elmlinger, Martin Schreivogel, Marc Schmid, Myriam Kaiser, Roman Priester, Patrick Sonstroem,  Michael Kneissl, Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica, Proc. SPIE 9888, Micro-Optics 2016, 98880A (2016); doi:10.1117/12.2227518
        12. Christian Mounir and Ulrich T. Schwarz, Ingrid L. Koslow and Michael Kneissl, Tim Wernicke, Tilman Schimpke and Martin Strassburg, Impact of Inhomogeneous Broadening on the Optical Polarization of High-Inclination Semipolar and Nonpolar InxGa1−xN/GaN Quantum Wells, Phys. Rev. B 93, 235314 (2016).
        13. Duc V. Dinh, Brian Corbett, and Peter. J. Parbrook, Ingrid. L. Koslow, Monir Rychetsky, Martin Guttmann, Tim Wernicke, and Michael Kneissl, Christian Mounir, Ulrich Schwarz, Johannes Glaab, Carsten Netzel, Frank Brunner, and Markus Weyers, Role of substrate quality on the performance of semipolar (11-22) InGaN light-emitting diodes, Journal of Applied Physics 120, 135701 (2016).
        14. F. Mehnke, X. T. Trinh, H. Pingel, T. Wernicke, E. Janzén, N. T. Son, and M. Kneissl, Electronic properties of Si-doped AlxGa1-xN with aluminum mole fraction above 80%, Journal of Applied Physics 120, 145702 (2016).
        15. F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers, and M. Kneissl, Gas sensing of nitrogen oxide utilizing spectrally pure deep UV LEDs, IEEE Journal of Selected Topics in Quantum Electronics 23, 1 (2017).
        16. Farsane Tabataba-Vakili, Thomas Wunderer, Michael Kneissl, Zhihong Yang, Mark Teepe, Max Batres, Martin Feneberg, Bernard Vancil, Noble M. Johnson, Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures, Appl. Phys. Lett. 109, 181105 (2016).


        Publikationen 2015

              1. N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl, and A. Bhattacharya, MOVPE growth of semipolar (112-2) AlInN across the alloy composition range (0 ≤ x ≤ 0.55), Journal of Crystal Growth 411, 106 (2015).
              2. T. Bruhn, B. Fimland, and P. Vogt, Electrophilic surface sites as precondition for the chemisorption of pyrrole on GaAs(001) surfaces, The Journal of Chemical Physics 142, 101903 (2015); doi: 10.1063/1.4906117.
              3. M. Lapeyrade, F. Eberspach, N. Lobo Ploch, C. Reich, M. Guttmann, T. Wernicke, F. Mehnke, S. Einfeldt, A. Knauer, M. Weyers, and M. Kneissl, Current spreading study in UV-C LED emitting around 235 nm, Proc. SPIE 9363, 93631P (2015), doi: 10.1117/12.2076349
              4. J. Rass, T. Kolbe, N. Lobo Ploch, T. Wernicke, F. Mehnke, C. Kuhn, J. Enslin, M. Guttmann, C. Reich, J. Glaab, C. Stoelmacker, M. Lapeyrade, S. Einfeldt, M. Weyers, and Michael Kneissl, High power UV-B LEDs with long lifetime, Proc. SPIE 9363, 93631K (2015), doi: 10.1117/12.2077426
              5. M. Feneberg, M. Winkler, J. Klamser, J. Stellmach, M. Frentrup, S. Ploch, F. Mehnke, T. Wernicke, M. Kneissl, R. Goldhahn, Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire, Appl. Phys. Lett. 106, 182102 (2015)
              6. V. Hoffmann, A. Mogilatenko, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, In-situ observation of InGaN quantum well decomposition during growth of laser diodes,  Crystal Research & Technology No. 6, 499-503 (2015), DOI: 10.1002/crat.201500073
              7. D. Papadimitriou*, G. Roupakas, R. Sáez-Araoz, M.-Ch. Lux-Steiner, N. H. Nickel,  S. Alamé, P. Vogt, M. Kneissl , Quality CuInSe2 and Cu(In,Ga)Se2 Thin Films processed by Single-Step Electrochemical Deposition Techniques, Materials Research Express 2, 056402 (2015)
              8. F. Mehnke, C. Kuhn, J. Stellmach, T. Kolbe, N. Lobo-Ploch, J. Rass, M.-A. Rothe, C. Reich, N. Ledentsov Jr., M. Pristovsek, T. Wernicke, and M. Kneissl, Effect of heterostructure design on carrier injection and emission characteristics 295 nm light emitting diodes, Journal of Applied Physics 117, 195704 (2015).
              9. Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stoelmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs, Mater. Res. Soc. Symp. Proc. Vol. 1792 (2015), DOI: 10.1557/opl.2015.446.
              10. A. Navarro-Quezada, Z. Galazka, S. Alamé, D. Skuridina, P.Vogt, N.Esser, Surface properties of annealed semiconductive β-Ga2O3 (100) single crystals for epitaxy, J. Appl. Phys. 349, 368–373 (2015)
              11. Joerg Jeschke, Martin Martens, Arne Knauer, Viola Kueller, Ute Zeimer, Carsten Netzel, Christian Kuhn, Felix Krueger, Christoph Reich, Tim Wernicke, Michael Kneissl, and Markus Weyers, UV-C lasing from AlGaN multiple quantum wells on different types of AlN/sapphire templates, IEEE Phot. Tech. Lett., Vol. 27 (18), 1969 (2015).
              12. Gunnar Kusch, M. Nouf-Allehiani, Frank Mehnke, Christian Kuhn, Paul Edwards, Tim Wernicke, Arne Knauer, Viola Kueller, Naresh Kumar Gunasekar, Markus Weyers, Michael Kneissl, Carol Trager-Cowan, and Robert Martin, Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N, Appl. Phys. Lett. 107, 072103 (2015).
              13. K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, Desorption induced GaN quantum dots on (0001) AlN by MOVPE, phys. stat. sol. RRL (DOI 10.1002/pssr.201510217)
              14. M. Kneissl, F. Mehnke, C. Kuhn, C. Reich, M. Guttmann, J. Enslin, T. Wernicke , A. Knauer, V. Kueller, U. Zeimer, M. Lapeyrade, J. Raß, N. Lobo-Ploch, T. Kolbe, J. Glaab, S. Einfeldt, M. Weyers, Deep Ultraviolet LEDs: from materials research to real-world applications, IEEE Summer Topical Meeting Series (SUM), 9-10 (2015)
              15. Li Xiao-Hang, T. Detchprohm, Liu Yuh-Shiuan, R.D. Dupuis, Kao Tsung-Ting , S. Haq, Shen Shyh-Chiang, K. Mehta, P.D. Yoder, Wei Shuo, Y.O. Wang, H. Xie, A.M. Fischer, F.A. Ponce, T. Wernicke, C. Reich, M. Martens, M.Kneissl, Optically pumped low-threshold UV lasers, IEEE Summer Topical Meeting Series (SUM), 119-120 (2015)
              16. Johannes Glaab, Christian Ploch, Rico Kelz, Christoph Stölmacker, Mickael Lapeyrade, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Sven Einfeldt, Frank Mehnke, Christian Kuhn, Tim Wernicke, Markus Weyers, Michael Kneissl, Degradation of (InAlGa)N-based UV-B LEDs stressed by current and temperature, submitted to J. Appl. Phys., Vol. 118 (9), 094504(2015).
              17. Duc V. Dinh, M. Pristovsek, M. Kneissl, MOVPE growth and indium incorporation of polar, semipolar (112-2) and (202-1) InGaN,  phys. stat. sol. (b), (2015), DOI: 10.1002/pssb.201552274
              18. L. Schade, T.Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz, On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552419
              19. L. Redaelli, H. Wenzel, J. Piprek, T. Weig, S. Einfeldt, M. Martens, G. Lükens, U.T. Schwarz, and M. Kneissl, Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current dependent gain and index spectra and self-consistent simulation, IEEE Journal of Quantum Electronics, Vol. 51, 2000506 (2015).
              20. Robert A. R. Leute, Junjun Wang, Tobias Meisch, Dominik Heinz, Marcus Müller, Gordon Schmidt, Sebastian Metzner, Peter Veit, Frank Bertram, Jürgen Christen, Martin Martens, Tim Wernicke, Michael Kneissl, Stefan Jenisch, Steffen Strehle, Ferdinand Scholz, Embedded GaN Nanostripes on c-sapphire for DFB Lasers with semipolar Quantum Wells, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552277
              21. M. Rychetsky, I. L. Koslow, T. Wernicke, J. Rass, V. Hoffmann, M. Weyers, and M. Kneissl, Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg, phys. stat. sol. (b) (2015), DOI: 10.1002/pssb.201552407
              22. Christoph Reich, Martin Guttmann, Martin Feneberg, Tim Wernicke, Frank Mehnke, Christian Kuhn, Jens Rass, Mickael Lapeyrade, Sven Einfeldt, Arne Knauer, Viola Kueller, Markus Weyers, Rüdiger Goldhahn, and Michael Kneissl, „Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well LEDs“, Appl. Phys. Lett. 107, 142101 (2015)
              23. U. Zeimer, J. Jeschke, A. Mogilatenko, A. Knauer, V. Kueller, V. Hoffmann,  C. Kuhn, F. Krüger, M. Martens, M. Kneissl, M. Weyers, Spatial inhomogeneities in structural and optical properties of AlxGa1-xN quantum wells induced by surface morphology of AlN/sapphire templates, Semiconductor Science and Technology 30 (11), 14008 (2015)
              24. A. Mogilatenko, J. Enslin, A. Knauer, F. Mehnke, K. Bellmann, T. Wernicke, M. Weyers, M. Kneissl, V-pit to truncated pyramid transition in AlGaN-based heterostructures, Semiconductor Science and Technology 30 (11), 114010 (2015).
              25. A. Navarro-Quezada, S. Alamé, N. Esser, J. Furthmüller, F. Bechstedt, Z. Galazka, , D. Skuridina, and P.Vogt, Near valence-band electronic properties of semiconducting β-Ga2O3 (100) single crystals, Phys. Rev. B. 92, 195306 (2015).
              26. M. Kneissl, A brief review of III-Nitride UV emitter technologies and applications , M. Kneissl, J. Rass (Eds.), “III-Nitride Ultraviolet Emitters - Technology & Applications” (Series on Material Science, Vol. 227), 1-26, Cham, Heidelberg, New York, London: Springer (2015)
              27. J. Rass, N Lobo-Ploch, Optical polarization and light extraction from UV LEDs, M. Kneissl, J. Rass (Eds.), “III-Nitride Ultraviolet Emitters - Technology & Applications” (Series on Material Science, Vol. 227), 137-170, Cham, Heidelberg, New York, London: Springer (2015)

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