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Inhalt des Dokuments

Publikationen 2014

        1. P. Vogt, P. Capiod, M. Berthe, A. Resta, P. De Padova, T. Bruhn, G. Le Lay, B. Grandidier, Synthesis and elecrtrical conductivity of multilayer silicene, Appl. Phys. Lett. 104, 021602 (2014). V. Hoffmann, A. Mogilatenko, C.
        2. V. Hoffmann, A. Mogilatenko, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes, Journal of Crystal Growth 391, 46 (2014), DOI: 10.1016/j.jcrysgro.2013.12.046
        3. M. Martens, F. Mehnke, C. Kuhn, C. Reich, T. Wernicke, J. Rass, V. Küller, A. Knauer, C. Netzel, M. Weyers, M. Bickermann, M. Kneissl, Performance characteristics of UV-C AlGaN-based lasers grown on sapphire and bulk AlN substrates, IEEE Photonics Tech. Lett., 26, 342 (2014)
        4. C. Netzel, J. Stellmach, M. Feneberg, M. Frentrup, M. Winkler, F. Mehnke, T. Wernicke, R. Goldhahn, M. Kneissl, M Weyers, Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers, Applied Physics Letters 104, 051906 (2014)
        5. L. Schade, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, U. T. Schwarz, Surface topology caused by dislocations in polar, semipolar and nonpolar InGaN/GaN heterostructures, phys. stat. sol. (a) 211, 756 (2014), DOI: 10.1002/pssa.201300448
        6. A. Mogilatenko, H. Kirmse, J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Kneissl, M. Weyers, Analysis of crystal orientation in AlN layers grown on m-plane sapphire, Journal of Crystal Growth 400, 54 (2014); dx.doi.org/10.1016/j.jcrysgro.2014.04.014 (2014)
        7. D. Skuridina, D. V. Dinh, M. Pristovsek, B. Lacroix, M.-P. Chauvat, P. Ruterana, M. Kneissl, P. Vogt Surface and crystal structure structure of nitridated sapphire substrates and their effect on polar InN layers, Appl. Surf. Sci. 307, 461-467 (2014)
        8. Neil W. Johnson, Patrick Vogt, Andrea Resta, Paola De Padova, Israel Perez, David Muir, Ernst Z. Kurmaev, Z. Kurmaev, Guy Le Lay, and Alexander Moewes, The Metallic Nature of Epitaxial Silicene Monolayers on Ag(111)  Adv. Funct. Mater. (2014), online 14.06.2014, DOI: 10.1002/adfm.201400769
        9. Zhi-Long Liu, Mei-Xiao Wang, Jin-Peng Xu, Jian-Feng Ge, Guy Le Lay, Patrick Vogt, Dong Qian, Chun-Lei Gao, Canhua Liu, Jin-Feng Jia Various atomic structures of monolayer silicene fabricated on Ag(111), New Journal of Physics 16, 075006 (2014).
        10. F. Mehnke, C. Kuhn, M. Guttmann, C. Reich, T. Kolbe, V. Kueller, A. Knauer, T. Wernicke, J. Rass, M. Weyers, and M. Kneissl, Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes, Appl. Phys. Lett. 105, 051113 (2014).
        11. J. B. Park, T. Niermann, D. Berger, A. Knauer, I. Koslow, M. Weyers, M. Kneissl, and M. Lehmann, Impact of electron irradiation on electron holographic potentiometry, Appl. Phys. Lett 105, 094102 (2014).
        12. Sebastian Friede, Sergei Kuehn, Jens W Tomm, Veit Hoffmann, Ute Zeimer, Markus Weyers, Michael Kneissl and Thomas Elsaesser, Nano-optical analysis of GaN-based diode lasers, Semicond. Sci. Technol. 29 112001 (2014)
        13. Xiao-Hang Li, Theeradetch Detchprohm, Tsung-Ting Kao, Md. Mahbub Satter, Shyh-Chiang Shen, P. Douglas Yoder, Russell D. Dupuis, Shuo Wang, Yong O. Wei, Hongen Xie, Alec M. Fischer, Fernando A. Ponce, Tim Wernicke, Christoph Reich, Martin Martens, and Michael Kneissl, Low threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple quantum well based lasers grown on sapphire substrates, Appl. Phys. Lett. 105, 141106 (2014).
        14. Jörg Jeschke, U. Zeimer, L. Redaelli, S. Einfeldt, M. Kneissl, M. Weyers, Effect of quantum well non-uniformities on lasing threshold, linewidth and lateral near field filamentation in violet (Al,In)GaN laser diodes , Appl. Phys. Lett 105, 173501 (2014).
        15. N. Hatui, A. Kadir, M. Frentrup, A. A. Rahman, S. Subramanian, M. Kneissl, and A. Bhattacharya, MOVPE growth of semipolar (112-2) AlInN across the alloy composition range (0 ≤ x ≤ 0.55), Journal of Crystal Growth, doi:10.1016/j.jcrysgro.2014.11.016 (2014).
        16. G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan, Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors, AIP Advances 4, 127101 (2014).
        17. Zhi-Long Liu,Mei-Xiao Wang, Canhua Liu, Jin-Feng Jia, Patrick Vogt, Claudio Quaresima, Carlo Ottaviani, Bruno Olivieri, Paola De Padova, Guy Le Lay, The fate of the 2√3 × 2√3R(30◦) silicene phase on Ag(111), APL MATERIALS 2, 092513 (2014).
        18. D. Papadimitriou, G. Roupakas, E. Chatzitheodoridis, G. Halampalakis, S. Tselepis, R. Sáez-Araoz, M.-Ch. Lux-Steiner, N. H. Nickel, S. Alamé, P. Vogt, M. Kneissl, Chemical and electrochemical processing of high quality CIS/CIGS absorber, buffer window, and anti-reflective coating for low cost photovoltaic technology, Proceedings EU PVSEC 2014, 1812-1815 (2014).

        Publikationen 2013

        1. N. Lobo Ploch, H. Rodriguez, C. Stölmacker, M. Hoppe, M. Lapeyrade, J. Stellmach, F. Mehnke, Tim Wernicke, A. Knauer, V. Kueller, M. Weyers, S. Einfeldt, M. Kneissl, Effective Thermal Management in Ultraviolet Light Emitting Diodes with Micro-LED Arrays, IEEE Trans Electron Devices, Vol. 60 (2) 782-786 (2013)
        2. J. Stellmach, F, Mehnke, M. Frentrup, C. Reich, J. Schlegel, M. Pristovsek, T. Wernicke, M. Kneissl, Structural and optical properties of semipolar (11-22) AlGaN grown on (10-10) sapphire by metal-organic vapour phase epitaxy, Journal of Crystal Growth 367 (2013) 42-47, DOI: 10.1016/j.jcrysgro.2013.01.006 (2013)
        3. J. Bläsing, P. Veit, A. Dadgar, A. Krost, V. Holý, S. Ploch, M. Frentrup, T. Wernicke, and M. Kneissl, Growth and characterization of stacking fault reduced GaN (10-13) on sapphire, J. Phys. D: Appl. Phys. 46, 125308 (2013)
        4. V. Kueller, A. Knauer, U. Zeimer, M. Kneissl, and M. Weyers, Controlled coalescence of MOVPE grown AlN during lateral overgrowth, Journal of Crystal Growth DOI: 10.1016/j.jcrysgro.2013.01.028 (2013)
        5. M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, J. Stellmach, M. Kneissl, F. Ivaldi, S. Kret, Growth mode transition and relaxation of thin InGaN layers on GaN (0001), J. Crystal Growth 372, 65 (2013)
        6. M. Pristovsek, R. Kremzow, M. Kneissl, Energetics of InGaAs quantum dot formation and relaxation on GaAs (001), Jpn. J. Appl. Phys., Vol. 52 (4), 041201 (2013).
        7. P. De Padova, P. Vogt, A. Resta, J. Avila, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T. Bruhn, T. Hirahara, T. Shirai, S. Hasegawa, M. C. Asensio, G. Le Lay, Evidence of Dirac Fermions in Multilayer Silicene Appl. Phys. Lett. 102, 163106 (2013).
        8. Duc V. Dinh, D. Skuridina, S. Solopow, M. Pristovsek, P. Vogt, M. Kneissl, Role of nitridation on the growth and the polarity of InN by metal-organic vapor phase epitaxy, J. Crystal Growth, 376, 17-22 (2013).
        9. Michael Kneissl, Jens Rass, Lukas Schade, Ulrich T. Schwarz, Growth and optical properties of GaN-based non- and semipolar LEDs, Seong, T.-Y.; Han, J.; Amano, H.; Morkoç, H. (Eds.), III-Nitride Based Light Emitting Diodes and Applications (Topics in Applied Physics, Vol. 126), 83-119, Berlin, Heidelberg, New York: Springer (2013).
        10. U. Zeimer, V. Kueller, A. Knauer, A. Mogilatenko, M. Weyers, M. Kneissl, High quality AlGaN grown on ELO AlN/sapphire templates, J. Crystal Growth 377, 32 (2013)
        11. J. Schlegel, M. Brendel, M. Martens, A. Knigge, J. Rass, S. Einfeldt, F. Brunner,M. Weyers, and M. Kneissl, Influence of carrier lifetime, transit time and operation voltages on the photoresponse of visible-blind AlGaN MSM photodetectors, Jpn. J. Appl. Phys. 52,  DOI: 10.7567/JJAP.52.08JF01 (2013)
        12. Jens Rass, Simon Ploch, Tim Wernicke, Martin Frentrup, Markus Weyers, and Michael Kneissl, Waveguide optimization for semipolar (In,Al,Ga)N laser diodes, Jpn. J. Appl. Phys. 52, DOI: 10.7567/JJAP.52.08JG12 (2013)
        13. Duc V. Dinh, S. Solopow, M. Pristovsek, M. Kneissl, Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys. 52, DOI: 10.7567/JJAP.52.08JD03 (2013)
        14. J. Avila, P. De Padova, S. Cho, I. Colambo, S. Lorcy, C. Quaresima, P. Vogt, A. Resta, G. Le Lay and M. C.Asensio, Presence of gapped silicene-derived band in the prototypical (3x3) silicene phase on silver (111) surfaces, (Fast Track Communication) J. Phys.: Cond. Mat. 25, 262001 (2013).
        15. M. Pristovsek, A. Kadir, M. Kneissl, Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys., Vol. 52 , DOI: 10.7567/JJAP.52.08JB23 (2013).
        16. L. Redaelli, A. Muhin, S. Einfeldt, P. Wolter, L. Weixelbaum and M. Kneissl, Ohmic Contacts on N-face n-type GaN after Low Temperature Annealing, IEEE Phot. Techn. Lett. 25 (13), 1278 (2013).
        17. T. Kolbe, F. Mehnke, M. Guttmann, C. Kuhn, J. Rass, T. Wernicke and M. Kneissl, Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure, Appl. Phys. Lett., 103, 031109 (2013)
        18. A. Resta, T. Leoni, C. Barth, A. Ranguis, C. Becker, T. Bruhn, P. Vogt & G. Le Lay, Atomic Structures of Silicene Layers Grown on Ag(111): Scanning Tunneling Microscopy and Noncontact Atomic Force Microscopy Observations, Sci. Rep. 3, 2399 (2013).
        19. T. Bruhn, B. O. Fimland, N. Esser, P. Vogt, STM analysis of defects at the GaAs(001)-c(4x4) surface, Surf. Sci. 617, 162–166 (2013). http://dx.doi.org/10.1016/j.susc.2013.07.012
        20. L. Redaelli, H. Wenzel, M. Martens, S. Einfeldt, M. Kneissl, and G. Tränkle, "Index antiguiding in narrow ridge-waveguide (In, AI)GaN based laser diodes," Journal of Applied Physics 114, 113102 (2013)
        21. M. Kneissl, T. Wernicke, Optical and structural properties of InGaN light emitters on non- and semipolar GaN, B. Gil (Ed.), III-nitride semiconductors and their modern devices (Series on Semiconductor Science and Technology 18), 244-279, New York: Oxford University Press (2013)
        22. P. De Padova, J. Avila, A. Resta, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T.  Bruhn, P. Vogt, M. C.  Asensio, G. Le Lay The quasiparticle band dispersion in epitaxial multilayer silicene, J. Phys.: Condens. Matter 25, 382202 (2013) (IOP select)
        23. D. Skuridina, D. Dinh, M. Pristovsek, B. Lacroix, P. Ruterana, M. Hoffmann, S. Zlatko, M. Kneissl, P. Vogt, Polarity determination of InN and GaN by valence band photoelectron spectroscopy, J. Appl. Phys. 114, 173503 (2013)
        24. M. Lapeyrade, Anton Muhin, Sven Einfeldt, Ute Zeimer, Anna Mogilatenko, Markus Weyers, Michael Kneissl, Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces, Semicond. Sci. Technol. 28 (2013), doi:10.1088/0268-1242/28/12/125015
        25. C. Reich, M. Feneberg, V. Kueller, A. Knauer, T. Wernicke, J. Schlegel, M. Frentrup, R. Goldhahn, M. Weyers, and M.Kneissl, Excitonic recombination in epitaxial lateral overgrown AlN on sapphire, Appl. Phys. Lett. 103, 212108, (2013).
        26. F. Mehnke, T. Wernicke, H. Pinhel, C. Kuhn, C. Reich, V. Kueller, A. Knauer, M. Lapeyrade, M. Weyers, M. Kneissl, Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%, Appl. Phys. Lett. 103, 212109, (2013).
        27. N. Lobo-Ploch, S. Einfeldt, M. Frentrup, J. Rass, T. Wernicke, A. Knauer, V. Küller, M. Weyers and M. Kneissl, Investigation of the temperature dependent efficiency droop in UV LEDs, Semicond. Sci. Technol. 28 , 125021, (2013), doi:10.1088/0268-1242/28/12/125021
        28. M. Frentrup, N. Hatui, T. Wernicke, J. Stellmach, A. Bhattacharya and M. Kneissl, Determination of lattice parameters, strain state, and composition in semipolar III-nitrides using high resolution X-ray diffraction, Journal of Applied Physics 114, 213509 (2013); doi: 10.1063/1.4834521
        29. P.Vogt, N.Esser, Surface and interface Science, Volume 3, Chapter Compound Semiconductor Surfaces, Ed. K. Wandelt, Wiley-VCH, November 2013; ISBN: 978-3-527-41157-3.

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