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Inhalt des Dokuments

Publikationen 2012

  1. J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson and T. Kolbe, Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells, Appl. Phys. Lett. 100, 021101 (2012).
  2. Tim Wernicke, Lukas Schade, Carsten Netzel, Jens Rass, Veit Hoffmann, Simon Ploch, Arne Knauer, Markus Weyers, Ulrich Schwarz, Michael Kneissl, Indium incorporation and emission wavelength of polar, nonpolar, and semipolar InGaN quantum wells, Semiconductor Science & Technology 27, 024014 (2012).
  3. S. Ploch, T. Wernicke, D. V. Dinh M. Pristovsek, M. Kneissl, Surface diffusion and layer morphology of {11-22} GaN layers grown by metal-organic vapor phase epitaxy, J. Appl Phys. 111, 033526 (2012).
  4. T. Bruhn, B. O. Fimland, N. Esser, P. Vogt, Adsorption of pyrrole on GaAs(001) c(4x4): The role of surface defects, Phys. Rev. B 85, 075322 (2012).
  5. S. Pandey, D. Cavalcoli, A. Minj, B. Fraboni, A. Cavallini, D. Skuridina, P. Vogt, M. Kneissl, Mobility Limiting Mechanisms in Polar Semiconductor Heterostructures, Acta Materialia (2012), doi:10.1016/j.actamat.2012.02.025
  6. Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina, and M. Kneissl,  Comparison of N- and In-polar InN layers grown by MOVPE, phys. stat. sol. (c) 9, 977 (2012).
  7. Lukas Schade, Ulrich. T. Schwarz, Tim Wernicke, Jens Rass, Simon Ploch, MarkusWeyers, Michael Kneissl, Auger recombination in nonpolar InGaN quantum wells, Proc. SPIE 8262, 82620K (2012), DOI: 10.1117/12.905955
  8. L. Redaelli, M. Martens, J. Piprek, H. Wenzel, C. Netzel, A. Linke, Y. V. Flores, S. Einfeldt, M. Kneissl, G. Tränkle, Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes, Proc. SPIE 8262, 826219 (2012); DOI: 10.1117/12.908368
  9. J. Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse, A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, M. Kneissl, Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN, Proc. SPIE, vol. 8262, no. 826218 (2012).
  10. T. Wunderer, C.L. Chua, J.E. Northrup, Z. Yang, N.M. Johnson, M. Kneissl, G.A. Garrett, H. Shen, M. Wraback, B. Moody, H.S. Craft, R. Schlesser, R.F. Dalmau, Z. Sitar, Optically Pumped UV Lasers Grown on Bulk AlN Substrates, phys. stat. sol. (c) 9, No. 3–4, 822 (2012).
  11. P. Vogt, P. De Padova,C. Quaresima,J. Avila, E. Frantzeskakis, M.Asensio, A. Resta, B. Ealet, G. Le Lay, Silicene: Compelling experimental evidence for graphene-like two-dimensional silicon, Phys. Rev. Lett.  108, 155501 (2012). 
  12. V. Kueller, A. Knauer, F. Brunner, A. Mogilatenko, M. Kneissl, and M. Weyers, "Investigation of inversion domain formation in AlN grown on sapphire by MOVPE", phys. stat. sol. (c), vol. 9, no. 3-4, pp. 496-498 (2012).
  13. Oliver Supplie, Thomas Hannappel, Markus Pristovsek, Hennig Döscher; In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces, Phys. Rev B 86, 035308 (2012).
  14. Duc V. Dinh, D. Skuridina, S. Solopow, F. Ivaldi, S.Kret, M. Pristovsek, P. Vogt, M. Kneissl, Growth and characterization of semipolar (11-22) InN, J. Appl. Phys. 112, 013530 (2012).
  15. J. Stellmach, M. Frentrup, F. Mehnke, T. Wernicke, M. Pristovsek, M. Kneissl, MOVPE growth of semipolar (11-22) AlN on m-plane (10-10) sapphire, J. Cryst. Growth 335 (2012) 59-62 DOI: 10.1016/j.jcrysgro.2012.06.047
  16. S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck M. Weyers M. Kneissl, Topography of (20-21) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy, J. Cryst. Growth. DOI: 10.1016/j.jcrysgro.2012.07.016
  17. T. Bruhn, L. Riele, B.-O. Fimland, N. Esser, P. Vogt, Optical investigations of the interface formation between organic molecules and semiconductor surfaces, Proc. of  the 49th Course of the International School of Solid State Physics, World Scientific (2012),  ISBN: 978-981-4417-11-2
  18. L. Riele, B. Buick, E. Speiser, B.-O. Fimland, P. Vogt, W. Richter, Epitaxial-like Growth of Lead Phthalocyanine Thin Layers on GaAs(001), Proc. of  the 49th Course of the International School of Solid State Physics, World Scientific (2012), ISBN: 978-981-4417-11-2
  19. R. Debusmann, V. Hoffmann, U. Brauch, M. Weyers, M. Kneissl, Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells, J. Appl. Phys. 112, 033110 (2012) DOI: 10.1063/1.4745025
  20. V. Kueller, A. Knauer, C. Reich, A. Mogilatenko, M. Weyers, J. Stellmach, T. Wernicke, M. Kneissl, Z. Yang, C. L. Chua, and N. M. Johnson, Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs, IEEE Photonics Tech. Letters (2012) DOI: 10.1109/LPT.2012.2210542
  21. C. Friedrich, A. Biermann, V. Hoffmann, M. Kneissl, N. Esser, P. Vogt, Preparation and atomic structure of reconstructed InGaN(0001) surfaces, J. Appl. Phys. 112, 033509 (2012)
  22. Abdul Kadir, Konrad Bellmann, Tino Simoneit, Markus Pristovsek, and Michael Kneissl, Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE, phys. stat. aol. (a), DOI 10.1002/pssa.201228238 (2012)
  23. G. Le Lay, P. De Padova, A. Resta, T. Bruhn and  P. Vogt,  Epitaxial silicene: can it be strongly strained?, Journal of Physics D 45, 392001 (2012).
  24. S. Ploch, T. Wernicke, M. Frentrup, M. Pristovsek, M. Weyers, M. Kneissl, Indium incorporation efficiency and critical layer thickness in (20-21) InGaN layers on GaN, Appl. Phys. Lett. 101, 202102 (2012).
  25. A. Knauer, V. Kueller, U. Zeimer, M. Weyers, C. Reich, and M. Kneissl, AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates, phys. stat. sol. (a), DOI:10.1002/pssa.201200648 (2012).

Publikationen 2011

  1. Tim Wernicke, Simon Ploch, Veit Hoffmann, Arne Knauer, Markus Weyers, and Michael Kneissl, Surface morphology of homoepitaxial GaN grown on non and semipolar GaN substrates, phys. stat. sol. (b) 248, No. 3, 574 (2011).
  2. M. Frentrup, S. Ploch, M. Pristovsek, M. Kneissl, Crystall orientation of GaN layers on (10-10) Sapphire, phys. stat. sol. (b) 248, No.3, 583 (2011).
  3. M.A. Würtele, T. Kolbe, A. Külberg, M. Lipsz, M. Weyers, M. Kneissl, M. Jekel, Application of GaN-based deep ultraviolet light emitting diodes - UV-LEDs - for Water disinfection, Water Research 45, 1481 (2011).
  4. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, M. Weyers, Advances in group III-nitride based deep UV light emitting diode technology, Semicond. Sci. Technol. 26, 014036 (2011).
  5. T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, Adsorbate-induced modification of the surface band bending at GaAs(001) surfaces, Phys. Rev. B 83, 045307 (2011)
  6. J. Stellmach M. Pristovsek, Ö. Savas, J. Schlegel, E. V. Yakovlev, M. Kneissl, High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor, Journal of Crystal Growth 315, 229 (2011).
  7. L. Schade, U.T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, Polarization dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells, phys. stat. sol. (b) 248, No.3, 638 (2011).
  8. F. Ivaldi, J. Domagala, S. Kret, Ch. Meissner, M. Pristovsek, M. Högele, and M. Kneissl, Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE, Jpn. J. of Appl. Phys. 50, No. 3, (2011).
  9. T. Kolbe, A. Knauer, J. Stellmach, C. Chua, Z. Yang, H. Rodrigues, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light emitting diodes, Proc. SPIE 7939, 79391G (2011).
  10. P. Kleinschmidt, H. Döscher, P. Vogt, T. Hannappel, Direct observation of dimer flipping at H-terminated InP and GaP (001) surfaces, Phys. Rev. B 83, 155316 (2011)
  11. T. Bruhn, B. O. Fimland, M. Kneissl, N. Esser, P. Vogt, In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001), J. Nanoparticle Research. (online) DOI 10.1007/s11051-011-0340-0
  12. M. Martens, J. Schlegel, P. Vogt, F. Brunner., R. Lossy, J. Würfl, M. Weyers, M. Kneissl, High gain UV photodetectors based on AlGaN/GaN heterostructures for optical switching, Appl. Phys. Lett. 98, 211114 (2011); doi:10.1063/1.3595303.
  13. Michael Kneissl, Tim Kolbe, Jessica Schlegel, Joachim Stellmach, Chris Chua, Zhihong Yang, Arne Knauer, Markus Weyers, Noble M. Johnson, AlGaN-based Ultraviolet Lasers - Applications and Materials Challenges, OSA Technical Digest (CD) (Optical Society of America, 2011), JTuB1 (2011).
  14. Carsten Netzel, Soheil Hatami, Veit Hoffmann, Tim Wernicke, Arne Knauer, Michael Kneissl, and Markus Weyers, GaInN quantum well design and measurement conditions affecting the emission energy S-shape, phys. status solidi (c), (2011), DOI 10.1002/pssc.201000956.
  15. R. Aleksiejunas, L. Lubys, M. Vengris, K. Jarasiunas, T. Wernicke, V. Hoffmann, C. Netzel, A. Knauer, M. Weyers, and M. Kneissl, Study of excess carrier dynamics in polar, semipolar, and non-polar InGaN epilayers and QWs, phys. status solidi (c), (2011), DOI 10.1002/pssc.201000973.
  16. Michael Kneissl & Jens Raß, Blue and green-emitting laser diodes, Landolt-Börnstein VIII-Vol. B Part III – Laser System, 27-42, Berlin, Heidelberg, New York: Springer (2011).
  17. S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl, Single phase {11-22} GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy, J Cryst. Growth 331, 25 (2011).
  18. L. Schade, U.T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M.Weyers, and M. Kneissl, On the optical polarization properties of semipolar InGaN quantum wells, Appl. Phys. Lett 99, 051103 (2011).
  19. A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, and M. Kneissl, ‘Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy’, J. Cryst. Growth 334, 40 (2011).
  20. C Netzel, C Mauder, T Wernicke, B Reuters, H Kalisch, M Heuken, A Vescan, M Weyers, M Kneissl, Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells, Semicond. Sci. Technol. 26, 105017 (2011).
  21. M. Pristovsek, A. Kadir, Ch. Meissner, T. Schwaner, M. Leyer, M. Kneissl, Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy, J. Appl. Phys. 110 (7) 073527(2011).
  22. J.Rass, T. Wernicke, S. Ploch, M. Brendel, A. Kruse,  A. Hangleiter, W. Scheibenzuber, U.T. Schwarz, M. Weyers, and M. Kneissl, Polarization dependent study of gain anisotropy in semipolar InGaN lasers, Appl. Phys. Lett. 99 (17) 171105 (2011).
  23. L. Riele, T. Bruhn, R. Passmann, V. Rackwitz, B. O. Fimland, P. Vogt, Reconstruction dependent epitaxial growth of lead-phthalocyanine films on GaAs(001) surfaces, Phys. Rev. B 84, 205317 (2011).
  24. Viola Kueller, Arne Knauer, Frank Brunner, Anna Mogilatenko, Michael Kneissl, Markus Weyers, Investigation of inversion domain formation in AlN grown on sapphire by MOVPE, phys. stat. sol. (c) (2011), DOI: 10.1002/pssc.201100495
  25. L. Schade, U. T. Schwarz, T.Wernicke, S. Ploch, M.Weyers, M. Kneissl, Spectral properties of polarized light from semipolar grown InGaN quantum wells, phys. stat. sol. (c) (2011), DOI:10.1002/pssc.201100493
  26. T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N.M. Johnson, M. Weyers and M. Kneissl, Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodesAppl. Phys. Lett. 99, 261105 (2011).
  27. V. Kueller, A. Knauer, U. Zeimer, H. Rodriguez, A. Mogilatenko, M. Kneissl, M. Weyers, (Al,Ga)N overgrowth over AlN ridges oriented in [11-20] and [1-100] direction, phys. stat. solidi (c) 8, 2022–2024 (2011).


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