AG Experimentelle Nanophysik und Photonik

Publikationen

2023

Muhin, Anton; Guttmann, Martin; Montag, Verena; Susilo, Norman; Ziffer, Eviathar; Sulmoni, Luca; Hagedorn, Sylvia; Lobo-Ploch, Neysha; Rass, Jens; Cancellara, Leonardo; Wu, Shaojun; Wernicke, Tim; Kneissl, Michael
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
Phys. Status Solidi A, 220 (16) :2200458
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 1862-6300
Kneissl, Michael; Christen, Jürgen; Hoffmann, Axel; Monemar, Bo; Wernicke, Tim; Schwarz, Ulrich; Haglund, Åsa; Meneghini, Matteo
Nitride Semiconductors
Phys. Status Solidi B, 260 (8) :2300286
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 0370-1972
Persson, Lars; Hjort, Filip; Cardinali, Giulia; Enslin, Johannes; Kolbe, Tim; Wernicke, Tim; Kneissl, Michael; Ciers, Joachim; Haglund, Åsa
Athermalization of the Lasing Wavelength in Vertical-Cavity Surface-Emitting Lasers
Laser Photonics Rev, 17 (8) :2300009
August 2023
Herausgeber: John Wiley & Sons, Ltd
ISSN: 1863-8880
Kolbe, Tim; Knauer, Arne; Rass, Jens; Cho, Hyun Kyong; Hagedorn, Sylvia; Bilchenko, Fedir; Muhin, Anton; Ruschel, Jan; Kneissl, Michael; Einfeldt, Sven; Weyers, Markus
234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer
Appl. Phys. Lett., 122 (19) :191101
Mai 2023
ISSN: 0003-6951
Piva, F.; Pilati, M.; Buffolo, M.; Roccato, N.; Susilo, N.; Hauer Vidal, D.; Muhin, A.; Sulmoni, L.; Wernicke, T.; Kneissl, M.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
Appl. Phys. Lett., 122 (18) :181102
Mai 2023
ISSN: 0003-6951
Roccato, Nicola; Piva, Francesco; De Santi, Carlo; Buffolo, Matteo; Fregolent, Manuel; Pilati, Marco; Susilo, Norman; Vidal, Daniel Hauer; Muhin, Anton; Sulmoni, Luca; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
Appl. Phys. Lett., 122 (16) :161105
April 2023
ISSN: 0003-6951
Höpfner, Jakob; Gupta, Priti; Guttmann, Martin; Ruschel, Jan; Glaab, Johannes; Kolbe, Tim; Rass, Jens; Knauer, Arne; Stölmacker, Christoph; Einfeldt, Sven; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
Temperature-dependent electroluminescence of stressed and unstressed InAlGaN multi-quantum well UVB LEDs
Appl. Phys. Lett., 122 (15) :151104
April 2023
ISSN: 0003-6951
Piva, F.; Grigoletto, M.; Brescancin, R.; De Santi, C.; Buffolo, M.; Ruschel, J.; Glaab, J.; Hauer Vidal, D.; Guttmann, M.; Rass, J.; Einfeldt, S.; Susilo, N.; Wernicke, T.; Kneissl, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
Appl. Phys. Lett., 122 (15) :151108
April 2023
ISSN: 0003-6951
Piva, F.; Buffolo, M.; Santi, C. De; Pilati, M.; Roccato, N.; Muhin, A.; Susilo, N.; Vidal, D. Hauer; Sulmoni, L.; Wernicke, T.; Kneissl, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy
, Band12421, Seite 1242107
März 2023
Meneghini, Matteo; Roccato, Nicola; Piva, Francesco; Santi, Carlo De; Buffolo, Matteo; Haller, Camille; Carlin, Jean-François; Grandjean, Nicolas; Tibaldi, Alberto; Bertazzi, Francesco; Goano, Michele; Verzellesi, Giovanni; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico
III-N optoelectronic devices: understanding the physics of electro-optical degradation
, Band12441, Seite 124410D
März 2023
Bergmann, Michael A.; Enslin, Johannes; Guttmann, Martin; Sulmoni, Luca; Ploch, Neysha Lobo; Hjort, Filip; Kolbe, Tim; Wernicke, Tim; Kneissl, Michael; Haglund, Åsa
Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing
ACS Photonics, 10 (2) :368–373
Februar 2023
Herausgeber: American Chemical Society
Cameron, Douglas; Coulon, Pierre-Marie; Fairclough, Simon; Kusch, Gunnar; Edwards, Paul R.; Susilo, Norman; Wernicke, Tim; Kneissl, Michael; Oliver, Rachel A.; Shields, Philip A.; Martin, Robert W.
Core-Shell Nanorods as Ultraviolet Light-Emitting Diodes
Nano Lett., 23 (4) :1451–1458
Februar 2023
Herausgeber: American Chemical Society
ISSN: 1530-6984
Knauer, A.; Kolbe, T.; Hagedorn, S.; Hoepfner, J.; Guttmann, M.; Cho, H. K.; Rass, J.; Ruschel, J.; Einfeldt, S.; Kneissl, M.; Weyers, M.
Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates
Applied Physics Letters, 122 (1) :011102
Januar 2023
ISSN: 0003-6951

2022

[English] Tanaka, Shiki; Ishii, Ryota; Susilo, Norman; Wernicke, Tim; Kneissl, Michael; Funato, Mitsuru; Kawakami, Yoichi
Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions
JAPANESE JOURNAL OF APPLIED PHYSICS, 61 (11)
November 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0021-4922
[English] Cho, H. K.; Mogilatenko, A.; Susilo, N.; Ostermay, I; Seifert, S.; Wernicke, T.; Kneissl, M.; Einfeldt, S.
Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37 (10)
Oktober 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
[English] Cardinali, G.; Hjort, F.; Prokop, N.; Enslin, J.; Cobet, M.; Bergmann, M. A.; Gustavsson, J.; Ciers, J.; Haeusler, I.; Kolbe, T.; Wernicke, T.; Haglund, Å.; Kneissl, M.
Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning
APPLIED PHYSICS LETTERS, 121 (10)
September 2022
Herausgeber: AIP Publishing
ISSN: 0003-6951
[English] Busch, Loris; Schleusener, Johannes; Diaz, Daniela F. Zamudio; Kroeger, Marius; Lohan, Silke B.; Zwicker, Paula; Sven, Einfeldt; Kneissl, Michael; Kuehl, Anja A.; Witzel, Christian; Klose, Holger; Keck, Cornelia M.; Kramer, Axel; Meinke, Martina C.
[YIA] THE INFLUENCE OF SKIN BARRIER DISRUPTION AND MELANIN CONTENT ON THE FORMATION OF DNA LESIONS AND RADICALS IN EX VIVO HUMAN SKIN INDUCED BY 233 NM FAR-UVC IRRADIATION FROM LEDS
FREE RADICAL BIOLOGY AND MEDICINE, 189 (1) :31
August 2022
Herausgeber: ELSEVIER SCIENCE INC
ISSN: 0891-5849
[English] Wu, Shaojun; Guttmann, Martin; Lobo-Ploch, Neysha; Gindele, Frank; Susilo, Norman; Knauer, Arne; Kolbe, Tim; Rass, Jens; Hagedorn, Sylvia; Cho, Hyun Kyong; Hilbrich, Katrin; Feneberg, Martin; Goldhahn, Ruediger; Einfeldt, Sven; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 37 (6)
Juni 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
[English] Guttmann, Martin; Lobo-Ploch, Neysha; Gundlach, Heiko; Mehnke, Frank; Sulmoni, Luca; Wernicke, Tim; Cho, Hyun Kyong; Hilbrich, Katrin; Kuelberg, Alexander; Friedler, Matthias; Filler, Thomas; Kaepplinger, Indira; Mitrenga, Dennis; Maier, Christian; Brodersen, Olaf; Ortlepp, Thomas; Woggon, Ulrike; Einfeldt, Sven; Kneissl, Michael
Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 55 (20)
Mai 2022
Herausgeber: IOP Publishing Ltd
ISSN: 0022-3727
[English] Cameron, Douglas; Edwards, Paul R.; Mehnke, Frank; Kusch, Gunnar; Sulmoni, Luca; Schilling, Marcel; Wernicke, Tim; Kneissl, Michael; Martin, Robert W.
The influence of threading dislocations propagating through an AlGaN UVC LED
APPLIED PHYSICS LETTERS, 120 (16)
April 2022
Herausgeber: AIP Publishing
ISSN: 0003-6951
[English] Zwicker, Paula; Schleusener, Johannes; Lohan, Silke B.; Busch, Loris; Sicher, Claudia; Einfeldt, Sven; Kneissl, Michael; Kühl, Anja A.; Keck, Cornelia M.; Witzel, Christian; Kramer, Axel; Meinke, Martina C.
Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models
SCIENTIFIC REPORTS, 12 (1)
Februar 2022
Herausgeber: NATURE PORTFOLIO
ISSN: 2045-2322
[English] Meneghini, Matteo; Piva, Francesco; De Santi, Carlo; Trivellin, Nicola; Buffolo, Matteo; Roccato, Nicola; Brescancin, Riccardo; Grigoletto, Massimo; Fiorimonte, Davide; Einfeldt, Sven; Glaab, Johannes; Ruschel, Jan; Susilo, Norman; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico
UV LED reliability: degradation mechanisms and challenges
In Fujioka, H and Morkoc, H and Schwarz, UT, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XVIIBand12001ausProceedings of SPIE
In Fujioka, H and Morkoc, H and Schwarz, UT, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2022
ISBN
978-1-5106-4874-6; 978-1-5106-4873-9
[English] Muhin, Anton; Guttmann, Martin; Montag, Verena; Susilo, Norman; Ziffer, Eviathar; Sulmoni, Luca; Hagedorn, Sylvia; Lobo-Ploch, Neysha; Rass, Jens; Cancellara, Leonardo; Wu, Shaojun; Wernicke, Tim; Kneissl, Michael
Radiative Recombination and Carrier Injection Efficiencies in 265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN/Sapphire Templates with Different Defect Densities
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
2022
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Glaab, J.; Ruschel, J.; Lobo Ploch, N.; Cho, H. K.; Mehnke, F.; Sulmoni, L.; Guttmann, M.; Wernicke, T.; Weyers, M.; Einfeldt, S.; Kneissl, M.
Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs
JOURNAL OF APPLIED PHYSICS, 131 (1)
Januar 2022
Herausgeber: AIP Publishing
ISSN: 0021-8979

2021

[English] Roemer, Friedhard; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael; Witzigmann, Bernd
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
MATERIALS, 14 (24)
Dezember 2021
Herausgeber: MDPI
[English] Guttmann, Martin; Susilo, Anna; Sulmoni, Luca; Susilo, Norman; Ziffer, Eviathar; Wernicke, Tim; Kneissl, Michael
Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 54 (33)
August 2021
Herausgeber: IOP Publishing Ltd
ISSN: 0022-3727
[English] Spasevski, Lucia; Buse, Ben; Edwards, Paul R.; Hunter, Daniel A.; Enslin, Johannes; Foronda, Humberto M.; Wernicke, Tim; Mehnke, Frank; Parbrook, Peter J.; Kneissl, Michael; Martin, Robert W.
Quantification of Trace-Level Silicon Doping in AlxGa1-xN Films Using Wavelength-Dispersive X-Ray Microanalysis
MICROSCOPY AND MICROANALYSIS, 27 (4) :696-704
August 2021
Herausgeber: CAMBRIDGE UNIV PRESS
ISSN: 1431-9276
[English] Glaab, Johannes; Lobo-Ploch, Neysha; Cho, Hyun Kyong; Filler, Thomas; Gundlach, Heiko; Guttmann, Martin; Hagedorn, Sylvia; Lohan, Silke B.; Mehnke, Frank; Schleusener, Johannes; Sicher, Claudia; Sulmoni, Luca; Wernicke, Tim; Wittenbecher, Lucas; Woggon, Ulrike; Zwicker, Paula; Kramer, Axel; Meinke, Martina C.; Kneissl, Michael; Weyers, Markus; Winterwerber, Ulrike; Einfeldt, Sven
Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs
SCIENTIFIC REPORTS, 11 (1)
Juli 2021
Herausgeber: NATURE PORTFOLIO
ISSN: 2045-2322
[English] Mehnke, Frank; Kuhn, Christian; Guttmann, Martin; Sulmoni, Luca; Montag, Verena; Glaab, Johannes; Wernicke, Tim; Kneissl, Michael
Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm
PHOTONICS RESEARCH, 9 (6) :1117-1123
Juni 2021
Herausgeber: CHINESE LASER PRESS
ISSN: 2327-9125
[English] Feneberg, Martin; Romero, Fátima; Goldhahn, Rüdiger; Wernicke, Tim; Reich, Christoph; Stellmach, Joachim; Mehnke, Frank; Knauer, Arne; Weyers, Markus; Kneissl, Michael
Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
APPLIED PHYSICS LETTERS, 118 (20)
Mai 2021
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Freier, Erik; Glaab, Johannes; Ruschel, Jan; Hoffmann, Veit; Kang, Ji Hye; Norman-Reiner, Maria; Wenzel, Hans; Kneissl, Michael; Einfeldt, Sven
Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device's operating voltage
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 54 (13)
April 2021
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English] Hjort, Filip; Enslin, Johannes; Cobet, Munise; Bergmann, Michael A.; Gustavsson, Johan; Kolbe, Tim; Knauer, Arne; Nippert, Felix; Häusler, Ines; Wagner, Markus R.; Wernicke, Tim; Kneissl, Michael; Haglund, Åsa
A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser
ACS PHOTONICS, 8 (1) :135-141
Januar 2021
Herausgeber: AMER CHEMICAL SOC
ISSN: 2330-4022
[English] Kneissl, M.; Cardinali, G.; Enslin, J.; Guttmann, M.; Kuhn, C.; Mehnke, F.; Schilling, M.; Sulmoni, L.; Susilo, N.; Wernicke, T.; Cho, H. K.; Glaab, J.; Ruschel, J.; Hagedorn, S.; Lobo-Ploch, N.; Netzel, C.; Rass, J.; Walde, S.; Winterwerber, U.; Einfeldt, S.; Weyers, M.
Advances towards deep-UV light emitting diode technologies
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC)
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2021
ISBN
978-1-6654-1876-8

2020

[English] Amano, Hiroshi; Collazo, Ramón; Santi, Carlo De; Einfeldt, Sven; Funato, Mitsuru; Glaab, Johannes; Hagedorn, Sylvia; Hirano, Akira; Hirayama, Hideki; Ishii, Ryota; Kashima, Yukio; Kawakami, Yoichi; Kirste, Ronny; Kneissl, Michael; Martin, Robert; Mehnke, Frank; Meneghini, Matteo; Ougazzaden, Abdallah; Parbrook, Peter J.; Rajan, Siddharth; Reddy, Pramod; Roemer, Friedhard; Ruschel, Jan; Sarkar, Biplab; Scholz, Ferdinand; Schowalter, Leo J.; Shields, Philip; Sitar, Zlatko; Sulmoni, Luca; Wang, Tao; Wernicke, Tim; Weyers, Markus; Witzigmann, Bernd; Wu, Yuh-Renn; Wunderer, Thomas; Zhang, Yuewei
The 2020 UV emitter roadmap
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (50)
Dezember 2020
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English] Muhin, A.; Guttmann, M.; Kuhn, C.; Mickein, E.; Aparici, J. R.; Ziffer, E.; Susilo, N.; Sulmoni, L.; Wernicke, T.; Kneissl, M.
Vertical conductivity and Poole-Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction
APPLIED PHYSICS LETTERS, 117 (25)
Dezember 2020
Herausgeber: AIP Publishing
ISSN: 0003-6951
[English] Ruschel, Jan; Glaab, Johannes; Susilo, Norman; Hagedorn, Sylvia; Walde, Sebastian; Ziffer, Eviathar; Cho, Hyun Kyong; Ploch, Neysha Lobo; Wernicke, Tim; Weyers, Markus; Einfeldt, Sven; Kneissl, Michael
Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
APPLIED PHYSICS LETTERS, 117 (24)
Dezember 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Foronda, Humberto M.; Hunter, Daniel A.; Pietsch, Mike; Sulmoni, Luca; Muhin, Anton; Graupeter, Sarina; Susilo, Norman; Schilling, Marcel; Enslin, Johannes; Irmscher, Klaus; Martin, Robert W.; Wernicke, Tim; Kneissl, Michael
Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy
APPLIED PHYSICS LETTERS, 117 (22)
November 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Prozheev, I.; Mehnke, F.; Wernicke, T.; Kneissl, M.; Tuomisto, F.
Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
APPLIED PHYSICS LETTERS, 117 (14)
Oktober 2020
Herausgeber: AIP Publishing
ISSN: 0003-6951
[English] Witzigmann, Bernd; Roemer, Friedhard; Martens, Martin; Kuhn, Christian; Wernicke, Tim; Kneissl, Michael
Calculation of optical gain in AlGaN quantum wells for ultraviolet emission
AIP ADVANCES, 10 (9)
September 2020
Herausgeber: AMER INST PHYSICS
[English] Cho, H. K.; Kang, J. H.; Sulmoni, L.; Kunkel, K.; Rass, J.; Susilo, N.; Wernicke, T.; Einfeldt, S.; Kneissl, M.
Low resistance n-contact for UVC LEDs by a two-step plasma etching process
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35 (9)
September 2020
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
[English] Lobo-Ploch, Neysha; Mehnke, Frank; Sulmoni, Luca; Cho, Hyun Kyong; Guttmann, Martin; Glaab, Johannes; Hilbrich, Katrin; Wernicke, Tim; Einfeldt, Sven; Kneissl, Michael
Milliwatt power 233nm AlGaN-based deep UV-LEDs on sapphire substrates
APPLIED PHYSICS LETTERS, 117 (11)
September 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Sulmoni, Luca; Mehnke, Frank; Mogilatenko, Anna; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
PHOTONICS RESEARCH, 8 (8) :1381-1387
August 2020
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English] Cho, Hyun Kyong; Susilo, Norman; Guttmann, Martin; Rass, Jens; Ostermay, Ina; Hagedorn, Sylvia; Ziffer, Eviathar; Wernicke, Tim; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael
Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact
IEEE PHOTONICS TECHNOLOGY LETTERS, 32 (14) :891-894
Juli 2020
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Hagedorn, Sylvia; Walde, Sebastian; Knauer, Arne; Susilo, Norman; Pacak, Daniel; Cancellara, Leonardo; Netzel, Carsten; Mogilatenko, Anna; Hartmann, Carsten; Wernicke, Tim; Kneissl, Michael; Weyers, Markus
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217 (14, SI)
Juli 2020
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Trager-Cowan, C.; Alasmari, A.; Avis, W.; Bruckbauer, J.; Edwards, P. R.; Ferenczi, G.; Hourahine, B.; Kotzai, A.; Kraeusel, S.; Kusch, G.; Martin, R. W.; McDermott, R.; Naresh-Kumar, G.; Nouf-Allehiani, M.; Pascal, E.; Thomson, D.; Vespucci, S.; Smith, M. D.; Parbrook, P. J.; Enslin, J.; Mehnke, F.; Kuhn, C.; Wernicke, T.; Kneissl, M.; Hagedorn, S.; Knauer, A.; Walde, S.; Weyers, M.; Coulon, P-M; Shields, P. A.; Bai, J.; Gong, Y.; Jiu, L.; Zhang, Y.; Smith, R. M.; Wang, T.; Winkelmann, A.
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 35 (5)
Mai 2020
Herausgeber: IOP Publishing Ltd
ISSN: 0268-1242
[English] Susilo, Norman; Ziffer, Eviathar; Hagedorn, Sylvia; Cancellara, Leonardo; Netzel, Carsten; Ploch, Neysha Lobo; Wu, Shaojun; Rass, Jens; Walde, Sebastian; Sulmoni, Luca; Guttmann, Martin; Wernicke, Tim; Albrecht, Martin; Weyers, Markus; Kneissl, Michael
Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire
PHOTONICS RESEARCH, 8 (4) :589-594
April 2020
Herausgeber: CHINESE LASER PRESS
ISSN: 2327-9125
[English] Hagedorn, Sylvia; Walde, Sebastian; Susilo, Norman; Netzel, Carsten; Tillner, Nadine; Unger, Ralph-Stephan; Manley, Phillip; Ziffer, Eviathar; Wernicke, Tim; Becker, Christiane; Lugauer, Hans-Juergen; Kneissl, Michael; Weyers, Markus
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High-Temperature Annealing for UVC Light-Emitting Diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 217 (7, SI)
April 2020
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Bergmann, Michael A.; Enslin, Johannes; Hjort, Filip; Wernicke, Tim; Kneissl, Michael; Haglund, Åsa
Thin-film flip-chip UVB LEDs realized by electrochemical etching
APPLIED PHYSICS LETTERS, 116 (12)
März 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Freytag, Stefan; Winkler, Michael; Goldhahn, Ruediger; Wernicke, Tim; Rychetsky, Monir; Koslow, Ingrid L.; Kneissl, Michael; Dinh, Duc; Corbett, Brian; Parbrook, Peter J.; Feneberg, Martin
Polarization fields in semipolar (20(1)over-bar(1)over-bar) and (20(2)over-bar1) InGaN light emitting diodes
APPLIED PHYSICS LETTERS, 116 (6)
Februar 2020
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Kang, Ji Hye; Wenzel, Hans; Freier, Erik; Hoffmann, Veit; Brox, Olaf; Fricke, Joerg; Sulmoni, Luca; Matalla, Mathias; Stoelmacker, Christoph; Kneissl, Michael; Weyers, Markus; Einfeldt, Sven
Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings
OPTICS LETTERS, 45 (4) :935-938
Februar 2020
Herausgeber: OPTICAL SOC AMER
ISSN: 0146-9592
[English] Walde, S.; Hagedorn, S.; Coulon, P. -M.; Mogilatenko, A.; Netzel, C.; Weinrich, J.; Susilo, N.; Ziffer, E.; Matiwe, L.; Hartmann, C.; Kusch, G.; Alasmari, A.; Naresh-Kumar, G.; Trager-Cowan, C.; Wernicke, T.; Straubinger, T.; Bickermann, M.; Martin, R. W.; Shields, P. A.; Kneissl, M.; Weyers, M.
AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 531
Februar 2020
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English] Lee, Da-Hoon; Kang, Daesung; Seong, Tae-Yeon; Kneissl, Michael; Amano, Hiroshi
Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 53 (4)
Januar 2020
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English] Trager-Cowan, C.; Alasmari, A.; Avis, W.; Bruckbauer, J.; Edwards, P. R.; Hourahine, B.; Kraeusel, S.; Kusch, G.; Jablon, B. M.; Johnston, R.; Martin, R. W.; McDermott, R.; Naresh-Kumar, G.; Nouf-Allehiani, M.; Pascal, E.; Thomson, D.; Vespucci, S.; Mingard, K.; Parbrook, P. J.; Smith, M. D.; Enslin, J.; Mehnke, F.; Kneissl, M.; Kuhn, C.; Wernicke, T.; Knauer, A.; Hagedorn, S.; Walde, S.; Weyers, M.; Coulon, P-M; Shields, P. A.; Zhang, Y.; Jiu, L.; Gong, Y.; Smith, R. M.; Wang, T.; Winkelmann, A.
Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope
, EMAS 2019 WORKSHOP - 16TH EUROPEAN WORKSHOP ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSISBand891ausIOP Conference Series-Materials Science and Engineering
Herausgeber: IOP PUBLISHING LTD, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
2020

2019

[English] Ren, Fan; Mishra, Kailash C.; Amano, Hiroshi; Collins, John; Han, Jung; Im, Won Bin; Kneissl, Michael; Seong, Tae-Yeon; Setlur, Anant; Suski, Tadek; Zych, Eugeniusz
Preface-JSS Focus Issue on Recent Advances inWide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (1)
Dezember 2019
Herausgeber: ELECTROCHEMICAL SOC INC
ISSN: 2162-8769
[English] Enslin, Johannes; Knauer, Arne; Mogilatenko, Anna; Mehnke, Frank; Martens, Martin; Kuhn, Christian; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
Determination of Sapphire Off-Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216 (24)
Dezember 2019
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Coulon, Pierre-Marie; Damilano, Benjamin; Alloing, Blandine; Chausse, Pierre; Walde, Sebastian; Enslin, Johannes; Armstrong, Robert; Vézian, Stéphane; Hagedorn, Sylvia; Wernicke, Tim; Massies, Jean; Zuniga-Perez, Jesus; Weyers, Markus; Kneissl, Michael; Shields, Philip A.
Displacement Talbot lithography for nano-engineering of III-nitride materials
MICROSYSTEMS & NANOENGINEERING, 5
Dezember 2019
Herausgeber: NATURE PUBLISHING GROUP
ISSN: 2055-7434
[English] Trager-Cowan, C.; Alasmari, A.; Avis, W.; Bruckbauer, J.; Edwards, P. R.; Hourahine, B.; Kraeusel, S.; Kusch, G.; Johnston, R.; Naresh-Kumar, G.; Martin, R. W.; Nouf-Allehiani, M.; Pascal, E.; Spasevski, L.; Thomson, D.; Vespucci, S.; Parbrook, P. J.; Smith, M. D.; Enslin, J.; Mehnke, F.; Kneissl, M.; Kuhn, C.; Wernicke, T.; Hagedorn, S.; Knauer, A.; Kueller, V.; Walde, S.; Weyers, M.; Coulon, P. -M.; Shields, P. A.; Zhang, Y.; Jiu, L.; Gong, Y.; Smith, R. M.; Wang, T.; Winkelmann, A.
Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films
PHOTONICS RESEARCH, 7 (11) :B73-B82
November 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English] Kolbe, Tim; Knauer, Arne; Enslin, Johannes; Hagedorn, Sylvia; Mogilatenko, Anna; Wernicke, Tim; Kneissl, Michael; Weyers, Markus
Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes
JOURNAL OF CRYSTAL GROWTH, 526
November 2019
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English] Kim, Ho-Young; Lee, Jong Woo; Moon, Young Min; Oh, Jeong Tak; Jeong, Hwan-Hee; Song, June-O; Seong, Tae-Yeon; Kneissl, Michael; Amano, Hiroshi
Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 9 (1)
November 2019
Herausgeber: ELECTROCHEMICAL SOC INC
ISSN: 2162-8769
[English] Kang, Daesung; Oh, Jeong-Tak; Song, June-O; Seong, Tae-Yeon; Kneissl, Michael; Amano, Hiroshi
Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application
APPLIED PHYSICS EXPRESS, 12 (10)
Oktober 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 1882-0778
[English] Bergmann, Michael A.; Enslin, Johannes; Yapparov, Rinat; Hjort, Filip; Wickman, Björn; Marcinkevičius, Saulius; Wernicke, Tim; Kneissl, Michael; Haglund, Åsa
Electrochemical etching of AlGaN for the realization of thin-film devices
APPLIED PHYSICS LETTERS, 115 (18)
Oktober 2019
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Monti, Desiree; De Santi, Carlo; Da Ruos, Silvia; Piva, Francesco; Glaab, Johannes; Rass, Jens; Einfeldt, Sven; Mehnke, Frank; Enslin, Johannes; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (8) :3387-3392
August 2019
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
[English] Guttmann, Martin; Hoepfner, Jakob; Reich, Christoph; Sulmoni, Luca; Kuhn, Christian; Roeder, Pascal; Wernicke, Tim; Kneissl, Michael
Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 34 (8)
August 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Ruschel, Jan; Glaab, Johannes; Beidoun, Batoul; Ploch, Neysha Lobo; Rass, Jens; Kolbe, Tim; Knauer, Arne; Weyers, Markus; Einfeldt, Sven; Kneissl, Michael
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
PHOTONICS RESEARCH, 7 (7) :B36-B40
Juli 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English] Enslin, Johannes; Wernicke, Tim; Lobanova, Anna; Kusch, Gunnar; Spasevski, Lucia; Teke, Tolga; Belde, Bettina; Martin, Robert W.; Talalaev, Roman; Kneissl, Michael
Indium incorporation in quaternary InxAlyGa1-x-yN for UVB-LEDs
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Kusch, Gunnar; Enslin, Johannes; Spasevski, Lucia; Teke, Tolga; Wernicke, Tim; Edwards, Paul R.; Kneissl, Michael; Martin, Robert W.
Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1-x-yN
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Guttmann, Martin; Mehnke, Frank; Belde, Bettina; Wolf, Fynn; Reich, Christoph; Sulmoni, Luca; Wernicke, Tim; Kneissl, Michael
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Susilo, Norman; Schilling, Marcel; Narodovitch, Michael; Yao, Hsin-Hung; Li, Xiaohang; Witzigmann, Bernd; Enslin, Johannes; Guttmann, Martin; Roumeliotis, Georgios G.; Rychetsky, Monir; Koslow, Ingrid; Wernicke, Tim; Niermann, Tore; Lehmann, Michael; Kneissl, Michael
Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance-voltage-measurements
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Foronda, Humberto Miguel; Graupeter, Sarina; Mehnke, Frank; Enslin, Johannes; Wernicke, Tim; Kneissl, Michael
Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates
JAPANESE JOURNAL OF APPLIED PHYSICS, 58 (C)
Juni 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Kuhn, Christian; Sulmoni, Luca; Guttmann, Martin; Glaab, Johannes; Susilo, Norman; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
PHOTONICS RESEARCH, 7 (5) :B7-B11
Mai 2019
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English] Glaab, J.; Ruschel, J.; Kolbe, T.; Knauer, A.; Rass, J.; Cho, H. K.; Ploch, N. Lobo; Kreutzmann, S.; Einfeldt, S.; Weyers, M.; Kneissl, M.
Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen
IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (7) :529-532
April 2019
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Kneissl, Michael; Seong, Tae-Yeon; Han, Jung; Amano, Hiroshi
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
NATURE PHOTONICS, 13 (4) :233-244
April 2019
Herausgeber: NATURE PUBLISHING GROUP
ISSN: 1749-4885
[English] Mehnke, Frank; Sulmoni, Luca; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael
Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm
APPLIED PHYSICS EXPRESS, 12 (1)
Januar 2019
Herausgeber: IOP PUBLISHING LTD
ISSN: 1882-0778
[English] Roemer, Friedhard; Witzigmann, Bernd; Guttmann, Martin; Susilo, Norman; Wernicke, Tim; Kneissl, Michael
Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes
In Witzigmann, B and Osinski, M and Arakawa, Y, Editor, PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXVIIBand10912ausProceedings of SPIE
In Witzigmann, B and Osinski, M and Arakawa, Y, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2019
ISBN
978-1-5106-2467-2

2018

[English] Susilo, Norman; Roumeliotis, Georgios G.; Narodovitch, Michael; Witzigmann, Bernd; Rychetsky, Monir; Neugebauer, Silvio; Guttmann, Martin; Enslin, Johannes; Dadgar, Armin; Niermann, Tore; Wernicke, Tim; Strittmatter, Andre; Lehmann, Michael; Papadimitriou, Dimitra N.; Kneissl, Michael
Accurate determination of polarization fields in (0001) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (48)
Dezember 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English] Cho, Hyun Kyong; Kuelberg, Alex; Ploch, Neysha Lobo; Rass, Jens; Ruschel, Jan; Kolbe, Tim; Knauer, Ma; Braun, Andrea; Krueger, Olaf; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael
Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning
IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (20) :1792-1794
Oktober 2018
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Kuhn, Christian; Martens, Martin; Mehnke, Frank; Enslin, Johannes; Schneider, Peter; Reich, Christoph; Krueger, Felix; Rass, Jens; Park, Jae Bum; Kueller, Viola; Knauer, Arne; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (41)
Oktober 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English] Glaab, Johannes; Ruschel, Jan; Mehnke, Frank; Lapeyrade, Mickael; Guttmann, Martin; Wernicke, Tim; Weyers, Markus; Einfeldt, Sven; Kneissl, Michael
Degradation behavior of AlGaN-based 233nm deep-ultraviolet light emitting diodes
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (9)
September 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Ruschel, J.; Glaab, J.; Brendel, M.; Rass, J.; Stoelmacker, C.; Lobo-Ploch, N.; Kolbe, T.; Wernicke, T.; Mehnke, F.; Enslin, J.; Einfeldt, S.; Weyers, M.; Kneissl, M.
Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs
JOURNAL OF APPLIED PHYSICS, 124 (8)
August 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Nippert, Felix; Mazraehno, Mohammad Tollabi; Davies, Matthew J.; Hoffmann, Marc P.; Lugauer, Hans-Juergen; Kure, Thomas; Kneissl, Michael; Hoffmann, Axel; Wagner, Markus R.
Auger recombination in AlGaN quantum wells for UV light-emitting diodes
APPLIED PHYSICS LETTERS, 113 (7)
August 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Kuhn, Christian; Simoneit, Tino; Martens, Martin; Markurt, Toni; Enslin, Johannes; Mehnke, Frank; Bellmann, Konrad; Schulz, Tobias; Albrecht, Martin; Wernicke, Tim; Kneissl, Michael
MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215 (13)
Juli 2018
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Susilo, Norman; Enslin, Johannes; Sulmoni, Luca; Guttmann, Martin; Zeimer, Ute; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 215 (10, SI)
Mai 2018
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Glaab, Johannes; Haefke, Joscha; Ruschel, Jan; Brendel, Moritz; Rass, Jens; Kolbe, Tim; Knauer, Arne; Weyers, Markus; Einfeldt, Sven; Guttmann, Martin; Kuhn, Christian; Enslin, Johannes; Wernicke, Tim; Kneissl, Michael
Degradation effects of the active region in UV-C light-emitting diodes
JOURNAL OF APPLIED PHYSICS, 123 (10)
März 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Jeschke, J.; Martens, M.; Hagedorn, S.; Knauer, A.; Mogilatenko, A.; Wenzel, H.; Zeimer, U.; Enslin, J.; Wernicke, T.; Kneissl, M.; Weyers, M.
Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 33 (3)
März 2018
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Mounir, Christian; Koslow, Ingrid L.; Wernicke, Tim; Kneissl, Michael; Kuritzky, Leah Y.; Adamski, Nicholas L.; Oh, Sang Ho; Pynn, Christopher D.; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.; Schwarz, Ulrich T.
On the optical polarization properties of semipolar (20(2)over-bar1) and (20(2)over-bar(1)over-bar) InGaN/GaN quantum wells
JOURNAL OF APPLIED PHYSICS, 123 (8)
Februar 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Kang, Ji Hye; Wenzel, Hans; Hoffmann, Veit; Freier, Erik; Sulmoni, Luca; Unger, Ralph-Stephan; Einfeldt, Sven; Wernicke, Tim; Kneissl, Michael
DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings
IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (3) :231-234
Februar 2018
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Muhin, Anton; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael
AlGaN multi-quantum barriers for electron blocking in group III-nitride devices
In Piprek, J and Djurisic, AB, Editor, 2018 18TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD 2018)ausInternational Conference on Numerical Simulation of Optoelectronic Devices, Seite 21-22
In Piprek, J and Djurisic, AB, Editor
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2018
ISBN
978-1-5386-5599-3
[English] Kang, J. H.; Wenzel, H.; Hoffmann, V; Freier, E.; Sulmoni, L.; Unger, R-S; Einfeldt, S.; Wernicke, T.; Kneissl, M.
10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings
In Belyanin, AA and Smowton, PM, Editor, NOVEL IN-PLANE SEMICONDUCTOR LASERS XVIIBand10553ausProceedings of SPIE
In Belyanin, AA and Smowton, PM, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2018
ISBN
978-1-5106-1592-2; 978-1-5106-1591-5
[English] Monti, D.; Meneghini, M.; De Santi, C.; Da Ruos, S.; Meneghesso, G.; Zanoni, E.; Glaab, J.; Rass, J.; Einfeldt, S.; Mehnke, F.; Enslin, J.; Wernicke, T.; Kneissl, M.
Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress
In Kim, JK and Krames, MR and Strassburg, M and Tu, LW, Editor, LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXIIBand10554ausProceedings of SPIE
In Kim, JK and Krames, MR and Strassburg, M and Tu, LW, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2018
ISBN
978-1-5106-1594-6
[English] Susilo, Norman; Hagedorn, Sylvia; Jaeger, Dominik; Miyake, Hideto; Zeimer, Ute; Reich, Christoph; Neuschulz, Bettina; Sulmoni, Luca; Guttmann, Martin; Mehnke, Frank; Kuhn, Christian; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire
APPLIED PHYSICS LETTERS, 112 (4)
Januar 2018
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951

2017

[English] Cho, H. K.; Krueger, O.; Kuelberg, A.; Rass, J.; Zeimer, U.; Kolbe, T.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.
Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (12)
Dezember 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Kolbe, Tim; Knauer, Arne; Rass, Jens; Cho, Hyun Kyong; Hagedorn, Sylvia; Einfeldt, Sven; Kneissl, Michael; Weyers, Markus
Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
MATERIALS, 10 (12)
Dezember 2017
Herausgeber: MDPI AG
ISSN: 1996-1944
[English] Cho, Hyun Kyong; Ostermay, Ina; Zeimer, Ute; Enslin, Johannes; Wernicke, Tim; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael
Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes
IEEE PHOTONICS TECHNOLOGY LETTERS, 29 (24) :2222-2225
Dezember 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Bellmann, Konrad; Pohl, Udo W.; Kuhn, Christian; Wernicke, Tim; Kneissl, Michael
Controlling the morphology transition between step-flow growth and step-bunching growth
JOURNAL OF CRYSTAL GROWTH, 478 :187-192
November 2017
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English] Lapeyrade, Mickael; Alamé, Sabine; Glaab, Johannes; Mogilatenko, Anna; Unger, Ralph-Stephan; Kuhn, Christian; Wernicke, Tim; Vogt, Patrick; Knauer, Arne; Zeimer, Ute; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael
Effect of Cl-2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N
JOURNAL OF APPLIED PHYSICS, 122 (12)
September 2017
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Pristovsek, Markus; Bellman, Konrad; Mehnke, Frank; Stellmach, Joachim; Wernicke, Tim; Kneissl, Michael
Surface reconstructions of (0001) AlN during metal-organic vapor phase epitaxy
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 254 (8)
August 2017
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English] De Santi, Carlo; Meneghini, Matteo; Monti, Desiree; Glaab, Johannes; Guttmann, Martin; Rass, Jens; Einfeldt, Sven; Mehnke, Frank; Enslin, Johannes; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs
PHOTONICS RESEARCH, 5 (2) :A44-A51
April 2017
Herausgeber: OPTICAL SOC AMER
ISSN: 2327-9125
[English] Lapeyrade, Mickael; Glaab, Johannes; Knauer, Arne; Kuhn, Christian; Enslin, Johannes; Reich, Christoph; Guttmann, Martin; Mehnke, Frank; Wernicke, Tim; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael
Design considerations for AlGaN-based UV LEDs emitting near 235nm with uniform emission pattern
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (4)
April 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Enslin, Johannes; Mehnke, Frank; Mogilatenko, Anna; Bellmann, Konrad; Guttmann, Martin; Kuhn, Christian; Rass, Jens; Lobo-Ploch, Neysha; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
JOURNAL OF CRYSTAL GROWTH, 464 :185-189
April 2017
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English] Kusch, Gunnar; Mehnke, Frank; Enslin, Johannes; Edwards, Paul R.; Wernicke, Tim; Kneissl, Michael; Martin, Robert W.
Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32 (3)
März 2017
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Mehnke, Frank; Guttmann, Martin; Enslin, Johannes; Kuhn, Christian; Reich, Christoph; Jordan, Jakob; Kapanke, Simon; Knauer, Arne; Lapeyrade, Mickael; Zeimer, Ute; Kreuger, Hendrik; Rabe, Marian; Einfeldt, Sven; Wernicke, Tim; Ewald, Hartmut; Weyers, Markus; Kneissl, Michael
Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 23 (2)
März 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1077-260X
[English] Martens, M.; Kuhn, C.; Simoneit, T.; Hagedorn, S.; Knauer, A.; Wernicke, T.; Weyers, M.; Kneissl, M.
The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers
APPLIED PHYSICS LETTERS, 110 (8)
Februar 2017
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Monti, Desiree; Meneghini, Matteo; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Glaab, Johannes; Rass, Jens; Einfeldt, Sven; Mehnke, Frank; Enslin, Johannes; Wernicke, Tim; Kneissl, Michael
Defect-Related Degradation of AlGaN-Based UV-B LEDs
IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (1) :200-205
Januar 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
[English] Kang, Ji Hye; Martens, Martin; Wenzel, Hans; Hoffmann, Veit; John, Wilfred; Einfeldt, Sven; Wernicke, Tim; Kneissl, Michael
Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings
IEEE PHOTONICS TECHNOLOGY LETTERS, 29 (1) :138-141
Januar 2017
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Kneissl, Michael; Rass, Jens; Schade, Lukas; Schwarz, Ulrich T.
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
In Seong, TY and Han, J and Amano, H and Morkoc, H, Editor, III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS, 2ND EDITION Band 133 aus Topics in Applied Physics
Seite 93-128
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2017
93-128
ISBN
978-981-10-3755-9; 978-981-10-3754-2
[English] Monti, Desiree; Meneghini, Matteo; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Glaab, Johannes; Rass, Jens; Einfeldt, Sven; Mehnke, Frank; Wernicke, Tim; Kneissl, Michael
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
In Kim, JK and Krames, MR and Tu, LW and Strassburg, M, Editor, LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XXIBand10124ausProceedings of SPIE
In Kim, JK and Krames, MR and Tu, LW and Strassburg, M, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2017
ISBN
978-1-5106-0689-0; 978-1-5106-0690-6

2016

[English] Alamé, Sabine; Quezada, Andrea Navarro; Skuridina, Dania; Reich, Christoph; Henning, Dimitri; Frentrup, Martin; Wernicke, Tim; Koslow, Ingrid; Kneissl, Michael; Esser, Norbert; Vogt, Patrick
Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 55 (SI) :7-11
November 2016
Herausgeber: ELSEVIER SCI LTD
ISSN: 1369-8001
[English] Minj, A.; Skuridina, D.; Cavalcoli, D.; Cros, A.; Vogt, P.; Kneissl, M.; Giesen, C.; Heuken, M.
Surface properties of AlInGaN/GaN heterostructure
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 55 (SI) :26-31
November 2016
Herausgeber: ELSEVIER SCI LTD
ISSN: 1369-8001
[English] Dinh, Duc V.; Corbett, Brian; Parbrook, Peter J.; Koslow, Ingrid. L.; Rychetsky, Monir; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael; Mounir, Christian; Schwarz, Ulrich; Glaab, Johannes; Netzel, Carsten; Brunner, Frank; Weyers, Markus
Role of substrate quality on the performance of semipolar (11(2)over-bar2) InGaN light-emitting diodes
JOURNAL OF APPLIED PHYSICS, 120 (13)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Mehnke, Frank; Trinh, Xuan Thang; Pingel, Harald; Wernicke, Tim; Janzén, Erik; Son, Nguyen Tien; Kneissl, Michael
Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80%
JOURNAL OF APPLIED PHYSICS, 120 (14)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Tabataba-Vakili, Farsane; Wunderer, Thomas; Kneissl, Michael; Yang, Zhihong; Teepe, Mark; Batres, Max; Feneberg, Martin; Vancil, Bernard; Johnson, Noble M.
Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures
APPLIED PHYSICS LETTERS, 109 (18)
Oktober 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Kang, Ji Hye; Krueger, Olaf; Spengler, Uwe; Zeimer, Ute; Einfeldt, Sven; Kneissl, Michael
On the formation of cleaved mirror facets of GaN-based laser diodes-A comparative study of diamond-tip edge-scribing and laser scribing
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 34 (4)
Juli 2016
Herausgeber: A V S AMER INST PHYSICS
ISSN: 2166-2746
[English] Mounir, Christian; Schwarz, Ulrich T.; Koslow, Ingrid L.; Kneissl, Michael; Wernicke, Tim; Schimpke, Tilman; Strassburg, Martin
Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar InxGa1-xN/GaN quantum wells
PHYSICAL REVIEW B, 93 (23)
Juni 2016
Herausgeber: AMER PHYSICAL SOC
ISSN: 2469-9950
[English] Knauer, Arne; Mogilatenko, Anna; Hagedorn, Silvia; Enslin, Johannes; Wernicke, Tim; Kneissl, Michael; Weyers, Markus
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AIN (vol 253, pg 809, 2016)
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (6) :1228
Juni 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English] Knauer, Arne; Mogilatenko, Anna; Hagedorn, Silvia; Enslin, Johannes; Wernicke, Tim; Kneissl, Michael; Weyers, Markus
Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (5) :809-813
Mai 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English] Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Kueller, V.; Knauer, A.; Rass, J.; Wernicke, T.; Einfeldt, S.; Weyers, M.; Kneissl, M.
Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes
APPLIED PHYSICS LETTERS, 108 (15)
April 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Rychetsky, Monir; Koslow, Ingrid; Avinc, Baran; Rass, Jens; Wernicke, Tim; Bellmann, Konrad; Sulmoni, Luca; Hoffmann, Veit; Weyers, Markus; Wild, Johannes; Zweck, Josef; Witzigmann, Bernd; Kneissl, Michael
Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements
JOURNAL OF APPLIED PHYSICS, 119 (9)
März 2016
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Leute, Robert A. R.; Heinz, Dominik; Wang, Junjun; Meisch, Tobias; Mueller, Marcus; Schmidt, Gordon; Metzner, Sebastian; Veit, Peter; Bertram, Frank; Christen, Juergen; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Jenisch, Stefan; Strehle, Steffen; Rettig, Oliver; Thonke, Klaus; Scholz, Ferdinand
Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :180-185
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English] Rychetsky, M.; Koslow, I. L.; Wernicke, T.; Rass, J.; Hoffmann, V.; Weyers, M.; Kneissl, M.
Impact of acceptor concentration on the resistivity of Ni/Au p-contacts on semipolar (20-21) GaN:Mg
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :169-173
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English] Kolbe, T.; Stellmach, J.; Mehnke, F.; Rothe, M. -A.; Kueller, V.; Knauer, A.; Einfeldt, S.; Wernicke, T.; Weyers, M.; Kneissl, M.
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213 (1) :210-214
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Glaab, Johannes; Ploch, Neysha Lobo; Rass, Jens; Kolbe, Tim; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Enslin, Johannes; Stoelmacker, Christoph; Kueller, Viola; Knauer, Arne; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael
Influence of the LED heterostructure on the degradation behavior of (InAlGa) N-based UV-B LEDs
In Chyi, JI and Fujioka, H and Morkoc, H and Nanishi, Y and Schwarz, UT and Shim, JI, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XIBand9748ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H and Nanishi, Y and Schwarz, UT and Shim, JI, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2016
ISBN
978-1-62841-983-2
[English] Dinh, Duc V.; Pristovsek, Markus; Kneissl, Michael
MOVPE growth and indium incorporation of polar, semipolar (11(2)over-bar2) and (20(2)over-bar21) InGaN
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :93-98
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English] Schade, L.; Wernicke, T.; Rass, J.; Ploch, S.; Weyers, M.; Kneissl, M.; Schwarz, U. T.
On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 253 (1) :145-157
Januar 2016
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0370-1972
[English] Elmlinger, Philipp; Schreivogel, Martin; Schmid, Marc; Kaiser, Myriam; Priester, Roman; Sonstroem, Patrick; Kneissl, Michael
Comparision of fabrication methods for microstructured deep UV multimode waveguides based on fused silica
In Thienpont, H and Mohr, J and Zappe, H and Nakajima, H, Editor, MICRO-OPTICS 2016Band9888ausProceedings of SPIE
In Thienpont, H and Mohr, J and Zappe, H and Nakajima, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2016
ISBN
978-1-5106-0133-8
[English] Kneissl, Michael
A Brief Review of III-Nitride UV Emitter Technologies and Their Applications
In Kneissl, M and Rass, J, Editor, III-NITRIDE ULTRAVIOLET EMITTERS: TECHNOLOGY AND APPLICATIONS Band 227 aus Springer Series in Materials Science
Seite 1-25
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2016
1-25
ISBN
978-3-319-24100-5; 978-3-319-24098-5
[English] Kneissl, Michael; Rass, Jens
III-Nitride Ultraviolet Emitters Technology and Applications Preface
In Kneissl, M and Rass, J, Editor, III-NITRIDE ULTRAVIOLET EMITTERS: TECHNOLOGY AND APPLICATIONS Band 227 aus Springer Series in Materials Science
Seite V-VII
Editorial Material; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2016
V-VII
ISBN
978-3-319-24100-5; 978-3-319-24098-5

2015

[English] Zeimer, Ute; Jeschke, Joerg; Mogilatenko, Anna; Knauer, Arne; Kueller, Viola; Hoffmann, Veit; Kuhn, Christian; Simoneit, Tino; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Weyers, Markus
Spatial inhomogeneities in AlxGa1-xN quantum wells induced by the surface morphology of AlN/sapphire templates
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11)
November 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Mogilatenko, A.; Enslin, J.; Knauer, A.; Mehnke, F.; Bellmann, K.; Wernicke, T.; Weyers, M.; Kneissl, M.
V-pit to truncated pyramid transition in AlGaN-based heterostructures
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 30 (11)
November 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Reich, Christoph; Guttmann, Martin; Feneberg, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Rass, Jens; Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus; Goldhahn, Ruediger; Kneissl, Michael
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
APPLIED PHYSICS LETTERS, 107 (14)
Oktober 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Glaab, Johannes; Ploch, Christian; Kelz, Rico; Stoelmacker, Christoph; Lapeyrade, Mickael; Ploch, Neysha Lobo; Rass, Jens; Kolbe, Tim; Einfeldt, Sven; Mehnke, Frank; Kuhn, Christian; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature
JOURNAL OF APPLIED PHYSICS, 118 (9)
September 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Bellmann, Konrad; Tabataba-Vakili, Farsane; Wernicke, Tim; Strittmatter, Andre; Callsen, Gordon; Hoffmann, Axel; Kneissl, Michael
Desorption induced GaN quantum dots on (0001) AlN by MOVPE
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 9 (9) :526-529
September 2015
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6254
[English] Jeschke, Joerg; Martens, Martin; Knauer, Arne; Kueller, Viola; Zeimer, Ute; Netzel, Carsten; Kuhn, Christian; Krueger, Felix; Reich, Christoph; Wernicke, Tim; Kneissl, Michael; Weyers, Markus
UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates
IEEE PHOTONICS TECHNOLOGY LETTERS, 27 (18) :1969-1972
September 2015
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Kusch, Gunnar; Nouf-Allehiani, M.; Mehnke, Frank; Kuhn, Christian; Edwards, Paul R.; Wernicke, Tim; Knauer, Arne; Kueller, Viola; Naresh-Kumar, G.; Weyers, Markus; Kneissl, Michael; Trager-Cowan, Carol; Martin, Robert W.
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
APPLIED PHYSICS LETTERS, 107 (7)
August 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Redaelli, Luca; Wenzel, Hans; Piprek, Joachim; Weig, Thomas; Einfeldt, Sven; Martens, Martin; Luekens, Gerrit; Schwarz, Ulrich T.; Kneissl, Michael
Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation
IEEE JOURNAL OF QUANTUM ELECTRONICS, 51 (8)
August 2015
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9197
[English] Hoffmann, V.; Mogilatenko, A.; Zeimer, U.; Einfeldt, S.; Weyers, M.; Kneissl, M.
In-situ observation of InGaN quantum well decomposition during growth of laser diodes
CRYSTAL RESEARCH AND TECHNOLOGY, 50 (6) :499-503
Juni 2015
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 0232-1300
[English] Mehnke, Frank; Kuhn, Christian; Stellmach, Joachim; Kolbe, Tim; Lobo-Ploch, Neysha; Rass, Jens; Rothe, Mark-Antonius; Reich, Christoph; Ledentsov, Nikolay; Pristovsek, Markus; Wernicke, Tim; Kneissl, Michael
Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes
JOURNAL OF APPLIED PHYSICS, 117 (19)
Mai 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Papadimitriou, D.; Roupakas, G.; Sáez-Araoz, R.; Lux-Steiner, M-Ch; Nickel, N. H.; Alamé, S.; Vogt, P.; Kneissl, M.
Quality CuInSe2 and Cu(In,Ga)Se-2 thin films processed by single-step electrochemical deposition techniques
MATERIALS RESEARCH EXPRESS, 2 (5)
Mai 2015
Herausgeber: IOP PUBLISHING LTD
ISSN: 2053-1591
[English] Feneberg, Martin; Winkler, Michael; Klamser, Juliane; Stellmach, Joachim; Frentrup, Martin; Ploch, Simon; Mehnke, Frank; Wernicke, Tim; Kneissl, Michael; Goldhahn, Ruediger
Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire
APPLIED PHYSICS LETTERS, 106 (18)
Mai 2015
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Hatui, Nirupam; Frentrup, Martin; Rahman, A. Azizur; Kadir, Abdul; Subramanian, Shruti; Kneissl, Michael; Bhattacharya, Arnab
MOVPE growth of semipolar (11(2)over-bar2) Al1-xInxN across the alloy composition range (0 <= x <= 0.55)
JOURNAL OF CRYSTAL GROWTH, 411 :106-109
Februar 2015
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English] Li, Xiao-Hang; Detchprohm, Theeradetch; Dupuis, Russell D.; Kao, Tsung-Ting; Shen, Shyh-Chiang; Satter, Md. Mahbub; Yoder, P. Douglas; Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec; Ponce, Fernando A.; Wernicke, Tim; Reich, Christof; Martens, Martin; Kneissl, Michael
III-nitride deep UV laser on sapphire substrate
2015 PHOTONICS CONFERENCE (IPC)ausIEEE Photonics Conference
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2015
ISBN
978-1-4799-7465-8
[English] Rass, Jens; Kolbe, Tim; Ploch, Neysha Lobo; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian; Enslin, Johannes; Guttmann, Martin; Reich, Christoph; Mogilatenko, Anna; Glaab, Johannes; Stoelmacker, Christoph; Lapeyrade, Mickael; Einfeldt, Sven; Weyers, Markus; Kneissl, Michael
High power UV-B LEDs with long lifetime
In Chyi, JI and Fujioka, H and Morkoc, H, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XBand9363ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2015
ISBN
978-1-62841-453-0
[English] Lapeyrade, Mickael; Eberspach, Florian; Glaab, Johannes; Lobo-Ploch, Neysha; Reich, Christoph; Kuhn, Christian; Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Einfeldt, Sven; Knauer, Arne; Weyers, Markus; Kneissl, Michael
Current spreading in UV-C LEDs emitting around 235 nm
In Chyi, JI and Fujioka, H and Morkoc, H, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES XBand9363ausProceedings of SPIE
In Chyi, JI and Fujioka, H and Morkoc, H, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2015
ISBN
978-1-62841-453-0

2014

[English] Naresh-Kumar, G.; Vilalta-Clemente, A.; Pandey, S.; Skuridina, D.; Behmenburg, H.; Gamarra, P.; Patriarche, G.; Vickridge, I.; Forte-Poisson, M. A.; Vogt, P.; Kneissl, M.; Morales, M.; Ruterana, P.; Cavallini, A.; Cavalcoli, D.; Giesen, C.; Heuken, M.; Trager-Cowan, C.
Multicharacterization approach for studying InAl(Ga) N/Al(Ga) N/GaN heterostructures for high electron mobility transistors
AIP ADVANCES, 4 (12)
Dezember 2014
Herausgeber: AMER INST PHYSICS
[English] Friede, Sebastian; Kuehn, Sergei; Tomm, Jens W.; Hoffmann, Veit; Zeimer, Ute; Weyers, Markus; Kneissl, Michael; Elsaesser, Thomas
Nano-optical analysis of GaN-based diode lasers
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 29 (11)
November 2014
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Li, Xiao-Hang; Detchprohm, Theeradetch; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Yoder, P. Douglas; Dupuis, Russell D.; Wang, Shuo; Wei, Yong O.; Xie, Hongen; Fischer, Alec M.; Ponce, Fernando A.; Wernicke, Tim; Reich, Christoph; Martens, Martin; Kneissl, Michael
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
APPLIED PHYSICS LETTERS, 105 (14)
Oktober 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Jeschke, J.; Zeimer, U.; Redaelli, L.; Einfeldt, S.; Kneissl, M.; Weyers, M.
Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al, In)GaN laser diodes
APPLIED PHYSICS LETTERS, 105 (17)
Oktober 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Park, J. B.; Niermann, T.; Berger, D.; Knauer, A.; Koslow, I.; Weyers, M.; Kneissl, M.; Lehmann, M.
Impact of electron irradiation on electron holographic potentiometry
APPLIED PHYSICS LETTERS, 105 (9)
September 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Mehnke, Frank; Kuhn, Christian; Guttmann, Martin; Reich, Christoph; Kolbe, Tim; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Einfeldt, Sven; Rass, Jens; Wernicke, Tim; Weyers, Markus; Kneissl, Michael
Efficient charge carrier injection into sub-250nm AlGaN multiple quantum well light emitting diodes
APPLIED PHYSICS LETTERS, 105 (5)
August 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Mogilatenko, A.; Kirmse, H.; Stellmach, J.; Frentrup, M.; Mehnke, E.; Wernicke, T.; Kneissl, M.; Weyers, M.
Analysis of crystal orientation in AIN layers grown on m-plane sapphire
JOURNAL OF CRYSTAL GROWTH, 400 :54-60
August 2014
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English] Skuridina, D.; Dinh, D. V.; Pristovsek, M.; Lacroix, B.; Chauvat, M. -P.; Ruterana, P.; Kneissl, M.; Vogt, P.
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
APPLIED SURFACE SCIENCE, 307 :461-467
Juli 2014
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0169-4332
[English] Schade, L.; Wernicke, T.; Rass, J.; Ploch, S.; Weyers, M.; Kneissl, M.; Schwarz, U. T.
Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 211 (4) :756-760
April 2014
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Hoffmann, V.; Mogilatenko, A.; Netzel, C.; Zeimer, U.; Einfeldt, S.; Weyers, M.; Kneissl, M.
Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes
JOURNAL OF CRYSTAL GROWTH, 391 :46-51
April 2014
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English] Netzel, Carsten; Stellmach, Joachim; Feneberg, Martin; Frentrup, Martin; Winkler, Michael; Mehnke, Frank; Wernicke, Tim; Goldhahn, Ruediger; Kneissl, Michael; Weyers, Markus
Polarization of photoluminescence emission from semi-polar (11-22) AlGaN layers
APPLIED PHYSICS LETTERS, 104 (5)
Februar 2014
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Martens, Martin; Mehnke, Frank; Kuhn, Christian; Reich, Chirstoph; Kueller, Viola; Knauer, Arne; Netzel, Carsten; Hartmann, Carsten; Wollweber, Juergen; Rass, Jens; Wernicke, Tim; Bickermann, Matthias; Weyers, Markus; Kneissl, Michael
Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
IEEE PHOTONICS TECHNOLOGY LETTERS, 26 (4) :342-345
Februar 2014
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135

2013

[English] Frentrup, Martin; Hatui, Nirupam; Wernicke, Tim; Stellmach, Joachim; Bhattacharya, Arnab; Kneissl, Michael
Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction
JOURNAL OF APPLIED PHYSICS, 114 (21)
Dezember 2013
Herausgeber: AIP Publishing
ISSN: 0021-8979
[English] Lapeyrade, Mickael; Muhin, Anton; Einfeldt, Sven; Zeimer, Ute; Mogilatenko, Anna; Weyers, Markus; Kneissl, Michael
Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12)
Dezember 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Ploch, N. Lobo; Einfeldt, S.; Frentrup, M.; Rass, J.; Wernicke, T.; Knauer, A.; Kueller, V.; Weyers, M.; Kneissl, M.
Investigation of the temperature dependent efficiency droop in UV LEDs
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 28 (12)
Dezember 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Skuridina, D.; Dinh, D. V.; Lacroix, B.; Ruterana, P.; Hoffmann, M.; Sitar, Z.; Pristovsek, M.; Kneissl, M.; Vogt, P.
Polarity determination of polar and semipolar (11(2)over-bar2) InN and GaN layers by valence band photoemission spectroscopy
JOURNAL OF APPLIED PHYSICS, 114 (17)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Reich, Christoph; Feneberg, Martin; Kueller, Viola; Knauer, Arne; Wernicke, Tim; Schlegel, Jessica; Frentrup, Martin; Goldhahn, Ruediger; Weyers, Markus; Kneissl, Michael
Excitonic recombination in epitaxial lateral overgrown AIN on sapphire
APPLIED PHYSICS LETTERS, 103 (21)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Mehnke, Frank; Wernicke, Tim; Pingel, Harald; Kuhn, Christian; Reich, Christoph; Kueller, Viola; Knauer, Arne; Lapeyrade, Mickael; Weyers, Markus; Kneissl, Michael
Highly conductive n-AlxGa1-xN layers with aluminum mole fractions above 80%
APPLIED PHYSICS LETTERS, 103 (21)
November 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Redaelli, L.; Wenzel, H.; Martens, M.; Einfeldt, S.; Kneissl, M.; Traenkle, G.
Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes
JOURNAL OF APPLIED PHYSICS, 114 (11)
September 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Rass, Jens; Ploch, Simon; Wernicke, Tim; Frentrup, Martin; Weyers, Markus; Kneissl, Michael
Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Pristovsek, Markus; Kadir, Abdul; Kneissl, Michael
Surface Transitions During InGaN Growth on GaN(0001) in Metal-Organic Vapor Phase Epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Dinh, Duc V.; Solopow, Sergej; Pristovsek, Markus; Kneissl, Michael
Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Schlegel, Jessica; Brendel, Moritz; Martens, Martin; Knigge, Andrea; Rass, Jens; Einfeldt, Sven; Brunner, Frank; Weyers, Markus; Kneissl, Michael
Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal-Semiconductor-Metal Photodetectors
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (8, 2, SI)
August 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0021-4922
[English] Zeimer, U.; Kueller, V.; Knauer, A.; Mogilatenko, A.; Weyers, M.; Kneissl, M.
High quality AlGaN grown on ELO AlN/sapphire templates
JOURNAL OF CRYSTAL GROWTH, 377 :32-36
August 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English] Dinh, Duc V.; Skuridina, D.; Solopow, S.; Pristovsek, M.; Vogt, P.; Kneissl, M.
Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 376 :17-22
August 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English] Redaelli, Luca; Muhin, Anton; Einfeldt, Sven; Wolter, Peter; Weixelbaum, Leonhard; Kneissl, Michael
Ohmic Contacts on N-Face n-Type GaN After Low Temperature Annealing
IEEE PHOTONICS TECHNOLOGY LETTERS, 25 (13) :1278-1281
Juli 2013
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Kolbe, T.; Mehnke, F.; Guttmann, M.; Kuhn, C.; Rass, J.; Wernicke, T.; Kneissl, M.
Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure
APPLIED PHYSICS LETTERS, 103 (3)
Juli 2013
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Pristovsek, Markus; Kadir, Abdul; Meissner, Christian; Schwaner, Tilman; Leyer, Martin; Stellmach, Joachim; Kneissl, Michael; Ivaldi, Francesco; Kret, Slawomir
Growth mode transition and relaxation of thin InGaN layers on GaN (0001)
JOURNAL OF CRYSTAL GROWTH, 372 :65-72
Juni 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English] Pristovsek, Markus; Kremzow, Raimund; Kneissl, Michael
Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)
JAPANESE JOURNAL OF APPLIED PHYSICS, 52 (4)
April 2013
Herausgeber: JAPAN SOC APPLIED PHYSICS
ISSN: 0021-4922
[English] Kueller, V.; Knauer, A.; Zeimer, U.; Kneissl, M.; Weyers, M.
Controlled coalescence of MOVPE grown AlN during lateral overgrowth
JOURNAL OF CRYSTAL GROWTH, 368 :83-86
April 2013
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English] Blaesing, Juergen; Holý, Vaclav; Dadgar, Armin; Veit, Peter; Christen, Juergen; Ploch, Simon; Frentrup, Martin; Wernicke, Tim; Kneissl, Michael; Krost, Alois
Growth and characterization of stacking fault reduced GaN( 1 0 1(\$)over-bar 3) on sapphire
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 46 (12)
März 2013
Herausgeber: IOP PUBLISHING LTD
ISSN: 0022-3727
[English] Stellmach, J.; Mehnke, F.; Frentrup, M.; Reich, C.; Schlegel, J.; Pristovsek, M.; Wernicke, T.; Kneissl, M.
Structural and optical properties of semipolar (11(2)over-bar2) AlGaN grown on (10(1)over-bar0) sapphire by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 367 :42-47
März 2013
Herausgeber: ELSEVIER SCIENCE BV
ISSN: 0022-0248
[English] Knauer, A.; Kueller, V.; Zeimer, U.; Weyers, M.; Reich, C.; Kneissl, M.
AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 210 (3) :451-454
März 2013
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Ploch, N. Lobo; Rodriguez, H.; Stoelmacker, C.; Hoppe, M.; Lapeyrade, M.; Stellmach, J.; Mehnke, F.; Wernicke, Tim; Knauer, A.; Kueller, V.; Weyers, M.; Einfeldt, S.; Kneissl, M.
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays
IEEE TRANSACTIONS ON ELECTRON DEVICES, 60 (2, SI) :782-786
Februar 2013
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 0018-9383
[English] Redaelli, L.; Wenzel, H.; Weig, T.; Luekens, G.; Einfeldt, S.; Schwarz, U. T.; Kneissl, M.; Traenkle, G.
Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)ausConference on Lasers and Electro-Optics
Herausgeber: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
2013
ISBN
978-1-55752-973-2
[English] Kneissl, Michael; Rass, Jens; Schade, Lukas; Schwarz, Ulrich T.
Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs
In Seong, TY and Han, J and Amano, H and Morkoc, H, Editor, III-NITRIDE BASED LIGHT EMITTING DIODES AND APPLICATIONS Band 126 aus Topics in Applied Physics
Seite 83-119
Review; Book Chapter
Herausgeber: SPRINGER-VERLAG BERLIN, HEIDELBERGER PLATZ 3, D-14197 BERLIN, GERMANY
2013
83-119
ISBN
978-94-007-5863-6; 978-94-007-5862-9

2012

[English] Kadir, Abdul; Bellmann, Konrad; Simoneit, Tino; Pristovsek, Markus; Kneissl, Michael
Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (12) :2487-2491
Dezember 2012
Herausgeber: WILEY-V C H VERLAG GMBH
ISSN: 1862-6300
[English] Ploch, Simon; Wernicke, Tim; Frentrup, Martin; Pristovsek, Markus; Weyers, Markus; Kneissl, Michael
Indium incorporation efficiency and critical layer thickness of (20(2)over-bar1) InGaN layers on GaN
APPLIED PHYSICS LETTERS, 101 (20)
November 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Ploch, Simon; Wernicke, Tim; Thalmair, Johannes; Lohr, Matthias; Pristovsek, Markus; Zweck, Josef; Weyers, Markus; Kneissl, Michael
Topography of (20(2)over-bar1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 356 :70-74
Oktober 2012
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English] Kueller, Viola; Knauer, Arne; Reich, Christoph; Mogilatenko, Anna; Weyers, Markus; Stellmach, Joachim; Wernicke, Tim; Kneissl, Michael; Yang, Zhihong; Chua, Christopher L.; Johnson, Noble M.
Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs
IEEE PHOTONICS TECHNOLOGY LETTERS, 24 (18) :1603-1605
September 2012
Herausgeber: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN: 1041-1135
[English] Stellmach, J.; Frentrup, M.; Mehnke, F.; Pristovsek, M.; Wernicke, T.; Kneissl, M.
MOVPE growth of semipolar (11(2)over-bar2) AIN on m-plane (10(1)over-bar0) sapphire
JOURNAL OF CRYSTAL GROWTH, 355 (1) :59-62
September 2012
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English] Friedrich, C.; Biermann, A.; Hoffmann, V.; Kneissl, M.; Esser, N.; Vogt, P.
Preparation and atomic structure of reconstructed (0001) InGaN surfaces
JOURNAL OF APPLIED PHYSICS, 112 (3)
August 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Debusmann, R.; Brauch, U.; Hoffmann, V.; Weyers, M.; Kneissl, M.
Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells
JOURNAL OF APPLIED PHYSICS, 112 (3)
August 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Dinh, Duc V.; Skuridina, D.; Solopow, S.; Frentrup, M.; Pristovsek, M.; Vogt, P.; Kneissl, M.; Ivaldi, F.; Kret, S.; Szczepanska, A.
Growth and characterizations of semipolar (11(2)over-bar2) InN
JOURNAL OF APPLIED PHYSICS, 112 (1)
Juli 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Pandey, Saurabh; Cavalcoli, Daniela; Minj, Albert; Fraboni, Beatrice; Cavallini, Anna; Skuridina, Daria; Vogt, Patrick; Kneissl, Michael
Mobility-limiting mechanisms in polar semiconductor heterostructures
ACTA MATERIALIA, 60 (6-7) :3176-3180
April 2012
Herausgeber: PERGAMON-ELSEVIER SCIENCE LTD
ISSN: 1359-6454
[English] Ploch, Simon; Wernicke, Tim; Dinh, Duc V.; Pristovsek, Markus; Kneissl, Michael
Surface diffusion and layer morphology of (11(2)over-bar2) GaN grown by metal-organic vapor phase epitaxy
JOURNAL OF APPLIED PHYSICS, 111 (3)
Februar 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0021-8979
[English] Han, Jung; Kneissl, Michael
Non-polar and semipolar nitride semiconductors
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 27 (2)
Februar 2012
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Wernicke, Tim; Schade, Lukas; Netzel, Carsten; Rass, Jens; Hoffmann, Veit; Ploch, Simon; Knauer, Arne; Weyers, Markus; Schwarz, Ulrich; Kneissl, Michael
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 27 (2)
Februar 2012
Herausgeber: IOP PUBLISHING LTD
ISSN: 0268-1242
[English] Kueller, Viola; Knauer, Arne; Brunner, Frank; Mogilatenko, Anna; Kneissl, Michael; Weyers, Markus
Investigation of inversion domain formation in AlN grown on sapphire by MOVPE
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 496-498
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
[English] Rass, Jens; Wernicke, Tim; Ploch, Simon; Brendel, Moritz; Kruse, Andreas; Hangleiter, Andreas; Scheibenzuber, Wolfgang; Schwarz, Ulrich T.; Weyers, Markus; Kneissl, Michael
Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES VIIBand8262ausProceedings of SPIE
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2012
ISBN
978-0-8194-8905-0
[English] Northrup, J. E.; Chua, C. L.; Yang, Z.; Wunderer, T.; Kneissl, M.; Johnson, N. M.; Kolbe, T.
Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
APPLIED PHYSICS LETTERS, 100 (2)
Januar 2012
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Schade, L.; Schwarz, U. T.; Wernicke, T.; Ploch, S.; Weyers, M.; Kneissl, M.
Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 700-703
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
[English] Redaelli, L.; Martens, M.; Piprek, J.; Wenzel, H.; Netzel, C.; Linke, A.; Flores, Y. V.; Einfeldt, S.; Kneissl, M.; Traenkle, G.
Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor, GALLIUM NITRIDE MATERIALS AND DEVICES VIIBand8262ausProceedings of SPIE
In Chyi, JI and Nanishi, Y and Morkoc, H and Piprek, J and Yoon, E, Editor
Herausgeber: SPIE-INT SOC OPTICAL ENGINEERING, 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
2012
ISBN
978-0-8194-8905-0
[English] Dinh, Duc V.; Pristovsek, M.; Solopow, S.; Skuridina, D.; Kneissl, M.
Comparison study of N- and In-polar \0001 InN layers grown by MOVPE
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 977-981
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012
[English] Wunderer, T.; Chua, C. L.; Northrup, J. E.; Yang, Z.; Johnson, N. M.; Kneissl, M.; Garrett, G. A.; Shen, H.; Wraback, M.; Moody, B.; Craft, H. S.; Schlesser, R.; Dalmau, R. F.; Sitar, Z.
Optically pumped UV lasers grown on bulk AlN substrates
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4Band9ausPhysica Status Solidi C-Current Topics in Solid State Physics, Seite 822-825
In Parbrook, PJ and Martin, RW and Halsall, MP, Editor
Herausgeber: WILEY-V C H VERLAG GMBH, PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
2012

2011

[English] Kolbe, Tim; Knauer, Arne; Chua, Chris; Yang, Zhihong; Kueller, Viola; Einfeldt, Sven; Vogt, Patrick; Johnson, Noble M.; Weyers, Markus; Kneissl, Michael
Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes
APPLIED PHYSICS LETTERS, 99 (26)
Dezember 2011
Herausgeber: AMER INST PHYSICS
ISSN: 0003-6951
[English] Kadir, Abdul; Meissner, Christian; Schwaner, Tilman; Pristovsek, Markus; Kneissl, Michael
Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy
JOURNAL OF CRYSTAL GROWTH, 334 (1) :40-45
November 2011
Herausgeber: ELSEVIER
ISSN: 0022-0248
[English] Bruhn, Thomas; Ewald, Marcel; Fimland, Bjorn-Ove; Kneissl, Michael; Esser, Norbert; Vogt, Patrick
In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001)
JOURNAL OF NANOPARTICLE RESEARCH, 13 (11, SI) :5847-5853
November 2011
Herausgeber: SPRINGER
ISSN: 1388-0764