direkt zum Inhalt springen

direkt zum Hauptnavigationsmenü

Sie sind hier

TU Berlin

Inhalt des Dokuments

2006

  1. Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg, Noble M. Johnson, Alexander Usikov and Vladimir Dmitriev, Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Template, Jpn. J. of Appl. Phys. 45, 3905 (2006)
  2. L. Zhou, J. E. Epler, M. R. Krames, W. Goetz, M. Gherasimova, Z. Ren, J. Han, M. Kneissl, and N. M. Johnson, Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes, Appl. Phys. Lett. 89, 241113 (2006)
  3. Richard K. Chang, Gustavo E. Fernandes, and Michael Kneissl, The Quest for Uni-Directionality with WGMs in µ-Lasers: Coupled Oscillators and Amplifiers, Proceedings of 2006 8th International Conference on Transparent Optical Networks, 47 (2006)
  4. M. Drago, P. Vogt, W. Richter, MOVPE growth of InN with ammonia on sapphire, Phys. Stat. Sol. (a), 203, 116-126 (2006)
  5. B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter, In-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy, Appl. Phys. Lett. 89, 063108 (2006)
  6. B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter, In-situ Scanning Tunneling Microscopy during Metal-organic Vapour Phase Epitaxy, Appl. Phys. Lett. 89 063108 (2006)
  7. M. Drago, C. Werner, M. Pristovsek, U.W. Pohl, W. Richter, InN growth on sapphire using different nitridation procedure, Phys. Stat. Sol. (a) 203 (7), 1622-1625 (2006)
  8. R. Ehlert, F. Poser, N. Esser, P. Vogt, W. Richter, MOVPE growth and surface reconstructions of GaAs(001) surfaces, Phys. Stat. Sol. (b) 243 No13 (2006) 2575-2580
  9. P. Ruterana, M. Abouzaid, F. Gloux, W. Maciej, J. L. Doualan, M. Drago, T. Schmidtling, U. W. Pohl, W. Richter, Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers, phys. stat. sol. (a) 203 (1), 156-161 (2006)

2005

  1. W.W. Chow & M. Kneissl, Laser gain properties of AlGaN quantum wells, J. Appl. Phys. 98, 114502 (2005)
  2. M. Kneissl, G.D. Chern, M. Teepe, D.W. Treat, Z. Yang, R.K. Chang, N.M. Johnson, Spiral-shaped microcdisk laser, SPIE Proc. 5738, 225 (2005)
  3. O. Schmidt, O. Wolst, M. Kneissl, P. Kiesel, Z.H. Yang, M. Teepe, N.M. Johnson, Gain and photoluminescence spectroscopy in violet and ultra-violet InAlGaN laser structures, phys. stat. sol. (c) 2, No. 7, 2891 (2005)
  4. M. Kneissl, M. Teepe, N. Miyashita, N.M. Johnson, G.D. Chern, R.K. Chang, Spiral-shaped microcavity laser: a new class of semiconductor laser, AIP Conference Proceedings 772, 1517 (2005)
  5. I.H. Brown, I.A. Pope, P.M. Smowton , P Blood, and J.D. Thomson, W.W. Chow, D.P. Bour, M. Kneissl, Determination of the Piezoelectric Field in InGaN Quantum Wells, Appl. Phys. Lett. 86, 131108 (2005)
  6. E. Silveira, J. A. Freitas Jr., G. Slack, L. Schowalter, M. A. Kneissl, D.W. Treat, N. M. Johnson, Free and bound excitons in bulk AlN, J. Cryst. Growth 281, 188 (2005)
  7. Michael Kneissl, Mark Teepe, Naoko Miyashita, Grace D. Chern, Richard K. Chang, and Noble M. Johnson, Spiral-shaped microcavity laser: a new class of semiconductor laser, AIP Conference Proc., Vol. 772, 1517 (2005)
  8. H. Y. Peng, M. D. McCluskey, Y. M. Gupta, M. A. Kneissl, N. M. Johnson, Shock-induced band gap shift in GaN: anisotropy of the deformation potentials, Phys. Rev. B 71, 115207 (2005)
  9. P. Ruterana, M. Morales, F. Gourbilleau, P. Singh, M. Drago, T. Schmidtling, U. W. Pohl, W. Richter, Effects of the low temperature buffer and annealing on the properties on InN layers grown by MOVPE, Phys. Stat. Sol. (a), 202 (5), 781-784 (2005)
  10. M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter, Development of InN metalorganic vapor phase epitaxy, Cryst. Res. Technol. 40, No. 10-11, 993-996 (2005)
  11. S. Chandola, J. Jacob, K. Fleischer, P. Vogt, W. Richter, J. F. McGilp, Optical response of Ag-induced reconstructions on vicianl Si(111), Phys. Stat. Sol. (b) 242, No. 15, 3017, 2005

Zusatzinformationen / Extras

Direktzugang

Schnellnavigation zur Seite über Nummerneingabe