Inhalt des Dokuments
2006
- Michael Kneissl, Zhihong Yang, Mark Teepe, Cliff Knollenberg, Noble M. Johnson, Alexander Usikov and Vladimir Dmitriev, Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Template, Jpn. J. of Appl. Phys. 45, 3905 (2006)
- L. Zhou, J. E. Epler, M. R. Krames, W. Goetz, M. Gherasimova, Z. Ren, J. Han, M. Kneissl, and N. M. Johnson, Vertical injection thin-film AlGaN/AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes, Appl. Phys. Lett. 89, 241113 (2006)
- Richard K. Chang, Gustavo E. Fernandes, and Michael Kneissl, The Quest for Uni-Directionality with WGMs in µ-Lasers: Coupled Oscillators and Amplifiers, Proceedings of 2006 8th International Conference on Transparent Optical Networks, 47 (2006)
- M. Drago, P. Vogt, W. Richter, MOVPE growth of InN with ammonia on sapphire, Phys. Stat. Sol. (a), 203, 116-126 (2006)
- B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter, In-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy, Appl. Phys. Lett. 89, 063108 (2006)
- B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter, In-situ Scanning Tunneling Microscopy during Metal-organic Vapour Phase Epitaxy, Appl. Phys. Lett. 89 063108 (2006)
- M. Drago, C. Werner, M. Pristovsek, U.W. Pohl, W. Richter, InN growth on sapphire using different nitridation procedure, Phys. Stat. Sol. (a) 203 (7), 1622-1625 (2006)
- R. Ehlert, F. Poser, N. Esser, P. Vogt, W. Richter, MOVPE growth and surface reconstructions of GaAs(001) surfaces, Phys. Stat. Sol. (b) 243 No13 (2006) 2575-2580
- P. Ruterana, M. Abouzaid, F. Gloux, W. Maciej, J. L. Doualan, M. Drago, T. Schmidtling, U. W. Pohl, W. Richter, Investigation of InN layers grown by MOCVD using analytical and high resolution TEM: The structure, band gap, role of the buffer layers, phys. stat. sol. (a) 203 (1), 156-161 (2006)
2005
- W.W. Chow & M. Kneissl, Laser gain properties of AlGaN quantum wells, J. Appl. Phys. 98, 114502 (2005)
- M. Kneissl, G.D. Chern, M. Teepe, D.W. Treat, Z. Yang, R.K. Chang, N.M. Johnson, Spiral-shaped microcdisk laser, SPIE Proc. 5738, 225 (2005)
- O. Schmidt, O. Wolst, M. Kneissl, P. Kiesel, Z.H. Yang, M. Teepe, N.M. Johnson, Gain and photoluminescence spectroscopy in violet and ultra-violet InAlGaN laser structures, phys. stat. sol. (c) 2, No. 7, 2891 (2005)
- M. Kneissl, M. Teepe, N. Miyashita, N.M. Johnson, G.D. Chern, R.K. Chang, Spiral-shaped microcavity laser: a new class of semiconductor laser, AIP Conference Proceedings 772, 1517 (2005)
- I.H. Brown, I.A. Pope, P.M. Smowton , P Blood, and J.D. Thomson, W.W. Chow, D.P. Bour, M. Kneissl, Determination of the Piezoelectric Field in InGaN Quantum Wells, Appl. Phys. Lett. 86, 131108 (2005)
- E. Silveira, J. A. Freitas Jr., G. Slack, L. Schowalter, M. A. Kneissl, D.W. Treat, N. M. Johnson, Free and bound excitons in bulk AlN, J. Cryst. Growth 281, 188 (2005)
- Michael Kneissl, Mark Teepe, Naoko Miyashita, Grace D. Chern, Richard K. Chang, and Noble M. Johnson, Spiral-shaped microcavity laser: a new class of semiconductor laser, AIP Conference Proc., Vol. 772, 1517 (2005)
- H. Y. Peng, M. D. McCluskey, Y. M. Gupta, M. A. Kneissl, N. M. Johnson, Shock-induced band gap shift in GaN: anisotropy of the deformation potentials, Phys. Rev. B 71, 115207 (2005)
- P. Ruterana, M. Morales, F. Gourbilleau, P. Singh, M. Drago, T. Schmidtling, U. W. Pohl, W. Richter, Effects of the low temperature buffer and annealing on the properties on InN layers grown by MOVPE, Phys. Stat. Sol. (a), 202 (5), 781-784 (2005)
- M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter, Development of InN metalorganic vapor phase epitaxy, Cryst. Res. Technol. 40, No. 10-11, 993-996 (2005)
- S. Chandola, J. Jacob, K. Fleischer, P. Vogt, W. Richter, J. F. McGilp, Optical response of Ag-induced reconstructions on vicianl Si(111), Phys. Stat. Sol. (b) 242, No. 15, 3017, 2005
Zusatzinformationen / Extras
Direktzugang
Schnellnavigation zur Seite über Nummerneingabe
