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Inhalt des Dokuments

2004

  1. E. Silveira, J.A. Freitas Jr., M. Kneissl, D.W. Treat, N.M. Johnson, G. Slack, L. Schowalter, Near-band-edge cathodoluminescence studies of AlN homoepitaxial films, Applied Physics Letters 84, 3501 (2004).
  2. M. Kneissl, M. Teepe, N. Miyashita, N.M. Johnson, G.D. Chern, R.K. Chang, Current-injection spiral-shaped microcavity disk laser diodes with uni-directional emission, Applied Physics Letters 84, 2485 (2004).
  3. G.D. Chern, H.E. Tureci, A.D. Stone, R.K. Chang, M. Kneissl, N.M. Johnson, Uni-directionally blue emitting spiral-shaped micropillar laser diode, 2004 Digest of the LEOS Summer Topical Meetings: Biophotonics/Optical Interconnects & VLSI Photonics/WGM Microcavities, 2 (2004)
  4. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet InGaN, AlGaN and InAlGaN multiple-quantum-well laser diodes, SPIE Proc. 5365, 278 (2004).
  5. O. Pulci, K. Fleischer, M. Pristovsek, S. Tsukamoto, R. DelSole, W. Richter, Structural Analysis by Reflectance Anisotropy Spectroscopy: As and Sb on GaAs(110), J. Phys.: Condens. Matter 16 (2004) 4367
  6. K. Lüdge, P. Vogt, W. Richter, B.-O. Fimland, W. Braun, N. Esser, Metallic nanostructures on Co/GaAs(001)(4x2) surfaces, J. Vac. Sci. Technol. B 22 (4) (2004) 2008
  7. V. Hoffmann, F. Poser, C. Kaspari, S. Weeke, M. Pristovsek, W. Richter, Nitrogen-arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE, Journal of Crystal Growth 272 (2004) 30-36
  8. M. Drago, T. Schmidtling, C. Werner, M. Pristovsek, U.W. Pohl, W. Richter, InN Growth and Annealing Investigations using in-situ Spectroscopic Ellipsometry, J.Crys. Growth 272, (2004), 87-93
  9. M.R. Phillips, M.H. Zareie, O. Gelhausen, M. Drago, T. Schmidtling, W. Richter, Scanning tunneling and cathodoluminescence spectroscopy of indium nitride, J.Crys. Growth 269, (2004), 106-110

2003

  1. G.D. Chern, H.E. Tureci, A.D. Stone, R.K. Chang, M. Kneissl, N.M. Johnson, Uni-directional lasing from InGaN multiple quantum-well spiral-shaped micropillars, Applied Physics Letters 83, 1710 (2003)
  2. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet AlGaN Multiple Quantum Well Laser Diodes, Applied Physics Letters 82, 4441 (2003)
  3. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Continuous-Wave Operation of Ultraviolet InGaN/InAlGaN Multiple Quantum Well Laser Diodes, Applied Physics Letters 82, 2386 (2003)
  4. M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, N.M. Johnson, Ultraviolet InAlGaN Multiple Quantum Well Laser Diodes, ("Editor’s Choice"), phys. stat. sol. (a), Vol. 200, No. 1, 118-121 (2003)
  5. H.Y. Peng, M.D. McCluskey, Y. Gupta, M. Kneissl, N.M. Johnson, The Franz-Keldysh effect in shocked GaN:Mg, Applied Physics Letters 82, 2085 (2003)
  6. E.A. Stach, W.S. Wong, M. Kneissl, Quantitative determination of the kinetics of nanopipe growth in GaN, Accepted for publication in the Proceedings of Materials Research Society 2002 Fall Meeting, Symposium on GaN and Related Alloys (2003)
  7. R.F. Schmidt, M. Kneissl, P. Kiesel, C.G. Van de Walle, N.M. Johnson, G. Doehler, F. Renner, Direct Determination of the Built-in Polarization Field in InGaN/GaN Quantum Wells, Proc. of SIMC XII, IEEE Catalog Number: 02CH37343 (ISBN: 0-7803-7418-5), 48-51 (2003)
  8. M. Kneissl, Advances in InGaAlN laser diode technology towards the development of UV optical sources, SPIE Proc. 4995, 103 (2003)
  9. J.W. Wagner, V. Wagner, L. Hansen, G. Schmidt, J. Geurts,P. Vogt, N. Esser, W. Richter, Preparation of BeTe surface reconstructions by decapping and thermal treatment, Journ. of Appl. Phys. 93, 1511, 2003
  10. W.G. Schmidt, P.H. Hahn, F. Bechstedt, N. Esser, P. Vogt, A. Wange, W. Richter, InP(001)-(2x1) surface: A hydrogen stabilized structure, Phys. Rev. Lett. 90, 126101, 2003
  11. K. Lüdge, P. Vogt, W. Braun, W. Richter, N. Esser, Cobalt growth on InGaP(001)(2X4): Interface formation, J. Vac. Sci. Technol. B 21 (2003)
  12. M. Drago, T. Schmidtling, U.W. Pohl, S. Peters, W. Richter, InN metalorganic vapour phase epitaxy and ellipsometric characterisation, phys. stat. sol. (c) 0, 7, 2842 (2003)
  13. M. Pristovsek, S. Tsukamoto, B. Han, J.T. Zettler, W. Richter, Influence of the reconstruction of GaAs(001) on the electro-opitcal bulk properties, Journ. Crys. Growth, 248, 254 (2003)

2002

  1. M. Kneissl, T.L. Paoli, P. Kiesel, D.W. Treat, M. Teepe, N.M. Miyashita, N.M. Johnson, Two-section InGaN multiple-quantum-well laser diode with integrated electro-absorption modulator, Applied Physics Letters 80 (18), 3283-3285 (2002).
  2. M. Kneissl, W.S. Wong, D.W. Treat, M. Teepe, M. R., Miyashita, N.M. Johnson, CW InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off, Materials Science & Engineering B, B93, 68 (2002)
  3. F. Renner, P. Kiesel, G. H. Döhler, M. Kneissl, C. G. Van de Walle, and N. M. Johnson, Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy, Applied Physics Letters 81 (3), 490 (2002).
  4. M.D. McCluskey, K.K. Zhuravlev, M. Kneissl, W.S. Wong, D.W. Treat, S. Limpijumnong, C.G. Van de Walle, N.M. Johnson, Vibrational spectroscopy of GaN:Mg under pressure, Mat. Res. Soc. Symp. Proc. Vol. 693, I2.4 (2002).
  5. J.A. Chediak, M. Kneissl, T. Sands, Evaluation of InGaN films as optical absorption filters for applications in integrated fluorescence detection micro-bioanalytical systems, Mat. Res. Soc. Symp. Proc. Vol. 693, I11.13 (2002)
  6. H.Y. Peng, M.D. McCluskey, Y.M. Gupta, M. Kneissl, N.M. Johnson, Band gap shift of GaN under uniaxial strain compression, Mat. Res. Soc. Symp. Proc. Vol. 693, I11.49 (2002).
  7. W.S. Wong, M. Kneissl, D.W. Treat, M. Teepe, N. Miyashita, A. Salleo, N.M. Johnson, Continuous-wave InGaN laser diodes on copper and diamond substrates, Journal of Materials Research, Vol. 17 (4), 890-894 (2002).
  8. M. Kneissl, N.M. Johnson, L. Schowalter, Palo Alto Research Center (PARC) and Crystal IS demonstrate the first UV-LED on AlN substrates, Compound Semiconductor, Vol. 8 (4), 9 (2002).
  9. M. Kneissl, N.M. Johnson, L. Schowalter, Successors to Sapphire in the GaN Market, III - Vs Review, Vol. 15, No 7 (2002).
  10. J.C. Rojo, L. Schowalter, S. Schujman, S. Biswas, G. Slack, K. Morgan, J. Barani, B. Raghothamachar, M. Dudley, M. Shur, R. Gaska, N.M Johnson, M. Kneissl, Progress in the preparation of aluminum nitride substrates from bulk crystals, Mat. Res. Soc. Symp. Proc. Vol. 722, K1.1.1 (2002)
  11. E.A. Stach, W.S. Wong, M. Kneissl, T.Sands, Defect Formation via thermal decomposition in GaN,P roceedings of the 4th Symposium on Non-Stoichiometric III-V Compounds published in the series "Physics of Microstructered Semiconductors", 151 (2002)
  12. P. Kiesel, F. Renner, M. Kneissl, C.G. Van de Walle, G. Doehler, N.M. Johnson, Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells, physica status solidi (b) 234, 742 (2002)
  13. M.D. McCluskey, Y.M. Gupta, C.G. Van de Walle, D.P. Bour, M. Kneissl, N.M. Johnson, Band gap changes of GaN shocked to 13 Gpa, Appl. Phys. Lett. 80, 1912 (2002)
  14. K. Haberland, A. Kaluza, M. Zorn M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter, Real-time calibration of wafer temperature, growth rate and composition by opitcal in-situ techniques during AlxGa1-xAs growth in MOVPE, Journ. Crys. Growth, 240, 87, 2002
  15. K. Lüdge, B. D. Schultz, P. Vogt, M. M. R. Evans, W. Braun, C.J. Palmstrom, W. Richter and N. Esser, Structure and Interface Composition of Co layers grown on As-rich GaAs(001) c(4x4) surfaces, J. Vac. Sci. Technol. B20, 1591 (2002)

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