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Inhalt des Dokuments

2001

  1. Michael Kneissl, William S. Wong, David W. Treat, Mark Teepe, Naoko Myiashita, Noble M. Johnson, CW INGaN multiple-quantum-well laser diodes on copper substrates, Physica Status Solidi A, Vol. 18 (1), 23 (2001)
  2. P. Kiesel, F. Renner, M. Kneissl, N.M. Johnson, G. Doehler, Electroabsorption spectroscopy - direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes, Physica Status Solidi A, Vol. 188, 131 (2001)
  3. L.T. Romano, M. Kneissl, J.E. Northrup, C.G. Van de Walle, D.W. Treat, Influence of microstructure on the carrier concentration of Mg-doped GaN films, Appl. Phys. Lett. 79, 2734 (2001)
  4. Wong, W.S., Kneissl, M., Mei, P., Treat, D.W., Teepe, M., Johnson, N.M., Integration of InxGa1-xN laser diodes with dissimilar substrates by laser lift-off, Mat. Res. Soc. Symp. Proc. Vol. 639, G12.2.1 (2001)
  5. H.D. Summers, P.M. Smowton, P. Blood, M. Dineen, R.M. Perks, D.P. Bour, M Kneissl, Spatially and spectrally resolved measurement of optical loss in InGaN laser structures, Journal of Crystal Growth, Vol. 230, 517 (2001)
  6. P.M. Sweeney, C.M. Harder, M.C. Cheung, A.N. Cartwright, D.P. Bour, M. Kneissl, F.H. Long, M.E. Aumer, S.F. LeBoeuf, S.M. Bedair, Optimizing light emission from nitride quantum wells, Proceedings of 2001 International Conference on Compound Semiconductor Manufacturing Technology, 159 (2001)
  7. Sweeney, P.M., Cheung, M.C., Chen, F., Cartwright, A.N., Bour, D.P., Kneissl, M., Spectroscopy and modeling of carrier recombination in III-N heterostructures, Physica Status Solidi B, Vol 228, 115, (2001)
  8. Michael Kneissl, William S. Wong, David W. Treat, Mark Teepe, Naoko Myiashita, Noble M. Johnson, Continuous-wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates obtained by Laser Lift-of, IEEE Journal of Selected Topics in Quantum Electronics Vol. 7, 188 (2001)
  9. Michael Kneissl, William S. Wong, Chris. G. Van de Walle, John E. Northrup, David W. Treat, Mark Teepe, Naoko Miyashita, Peter Kiesel and Noble M. Johnson, Performance Characteristics of CW InGaN Multiple-Quantum-Well Laser Diodes, Mat. Res. Soc. Symp. Proc. Vol. 639, G10.6 (2001)
  10. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrate, Appl. Phys. Lett. 78, 1198 (2001)
  11. William S. Wong, Michael Kneissl, David W. Treat, Mark Teepe, Naoko Miyashita and Noble M. Johnson, Continuous-wave InGaN MQW laser diodes on copper and diamond substrate, Compound Semiconductor, Vol. 7 (2), 47 (2001)
  12. M. Pristovsek, S. Tsukamoto, N. Koguchi, B. Han, K. Haberland, J.T. Zettler, W. Richter, M. Zorn, M. Weyers, In-situ determination of the carrier concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy, Phys. Stat. Solidi A 188, 1423 (2001)

2000

  1. W.S. Wong, M. Kneissl, P. Mei, D.W. Treat, M. Teepe, N.M. Johnson, The integration of InxGa1-xN multiple quantum well laser diodes on Copper substrates laser lift-off, Jpn. J. Appl. Phys. , Part 2, Vol 39, L1203 (2000)
  2. M. Kneissl, D.P. Bour, L.T. Romano, C.G. van de Walle, J.E. Northrup, W.S. Wong, D.W. Treat, M. Teepe, T. Schmidt, N.M. Johnson , Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates , Appl. Phys. Lett. 77 (13), 1931 (2000)
  3. D.P. Bour, M. Kneissl, C.G. van de Walle, J.E. Northrup, L.T. Romano, M. Teepe, R. Wood, T. Schmidt, N.M. Johnson , CW operation of InGaN MQW laser diodes , Physica Status Solidi A, Vol. 180, 139 (2000)
  4. W.S. Wong, T. Sands, N.W. Cheung, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, N.M. Johnson, InGaN light-emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off, Appl. Phys. Lett. 77, 2822 (2000)
  5. D.P. Bour, N.M. Nickel, C.G. Van de Walle, M. Kneissl, B.S. Krusor, P. Mei, N.M. Johnson, Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates, Appl. Phys. Lett. 76, 2182 (2000)
  6. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off, Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors, 125 (2000)
  7. M. Kneissl, L.T. Romano, C.G. van de Walle, J.E. Nortrup, W.S. Wong, D.W. Treat, M. Teepe, N. Miyashita and Noble M. Johnson, Advances in blue laser diode development for high resolution printin, Proceedings of International Workshop on Nitride Semiconductors, 903 (2000)
  8. William S. Wong, Michael Kneissl, Ping Mei, David W. Treat, Mark Teepe, and Noble M. Johnson, Fabrication of InGaN multiple-quantum-well laser diodes on copper substrates by laser lift-off, Proceedings of International Workshop on Nitride Semiconductors, 883 (2000)
  9. L.L. Goddard, M. Kneissl, D.P. Bour, N.M. Johnson, Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing, J. Appl. Phys. 88 (7), 3820 (2000)
  10. Michael Kneissl, David P. Bour and Noble M. Johnson, Advances in laser diode development for high resolution and high speed printing, SPIE Proc. Vol. 3947, 174 (2000)
  11. D. Hofstetter, L.T. Romano, T.L. Paoli, D.P. Bour, M. Kneissl, Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed feedback laser diodes, Appl. Phys. Lett. 76 (17), 2337 (2000)
  12. Michael Kneissl, Chris G. Van de Walle, David P. Bour, Linda T. Romano, Cyrus P. Master, John E. Northrup, Noble M. Johnson, Performance and optical gain characteristic of InGaN MQW laser diodes, Journal of Luminescence 87-89, 135 (2000)
  13. N.B. Rex, R.K. Chang, L.J. Guido, D.P. Bour, M. Kneissl, Directional laser emission from chaotic modes in quadrupole-deformed GaN microdisks, Conference on Lasers and Electro-Optics (CLEO 2000), Technical Digest, Vol. 39, 178 (2000)
  14. D.P. Bour, M. Kneissl, C.G. Van de Walle, G.A. Evans, L.T. Romano, J.E. Northrup, M. Teepe, R.M. Wood, N.M. Johnson, Design and Performance of Asymmetric Waveguide Nitride Laser Diodes, IEEE Journal of QE, vol 36 (2), 184 (2000)
  15. M. Pristovsek, T. Trepk, M. Klein, J.-T. Zettler, W. Richter, Dynamic study of the surfaces of (001)GaAs in MOVPE during arsenic desorption, J. Appl. Phys., 87, (2000), 1245
  16. P. Vogt, A.M. Frisch, Th. Hannappel, S. Visbeck, F. Willig, Ch. Jung, R. Follath, W. Braun, W. Richter, N. Esser, Atomic structure and composition of the P-rich InP(001) surfaces, Appl. Surf. Sci. 166, 190 (2000)
  17. A.M. Frisch, P. Vogt, S. Visbeck, Th. Hannappel, F. Willig, W. Braun, W. Richter, J. Bernholc, W.G. Schmidt, N. Esser, Angle Resolved Photoemission Spectroscopy of the InP(001) Surface, Appl. Surf. Sci.166, 224 (2000)
  18. N. Esser, A.M. Frisch, W. Richter, P. Vogt, W. Braun, R. Follath, Ch. Jung, High-resolution core level photoelectron spectroscopy on InP(110) , Sol. Stat. Com. 113, 443 (2000)
  19. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Atomic Structure and composition of the (2x4) reconstruction on InGaP(001), PCSI-27 Salt-Lake City (2000), J. Vac. Sci. Technol. B, 18 (4), 2210 (2000)
  20. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Atomic structure and Composition of the (2x4) reconstruction of InGaP(001), J. Vac. Sci. Technol B18, 2210 (2000)
  21. K. Lüdge, P. Vogt, O. Pulci, N. Esser, F. Bechstedt, W. Richter, Clarification of the GaP(001)(2x4) Ga-rich reconstruction by scanning tunneling microscopy and ab initio theory, Phys. Rev. B 62, 11046 (2000),
  22. K. Lüdge, P. Vogt, O. Pulci, N. Esser, F. Bechstedt, W. Richter, Atomic structure of GaP(001) and InP(001) reconstructions: scanning tunneling microscopy and ab initio theory, Proc. 25th Int. Conf. Phys. Semicond., Osaka 2000, Springer Proceedings in Physics 87 (Eds. N. Miura and T. Ando), p. 445, Springer Verlag Heidelberg (2001)
  23. P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser, Surface structure of ordered InGaP(001): The (2x4) reconstruction, Phys Rev B 62, 12601 (2000)
  24. M. Pristovsek, B. Han, J.-T. Zettler, W. Richter, In situ investigation of GaAs(001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy, J. Crys. Growth 221, 149 (2000)

1999

  1. Michael Kneissl, David P. Bour, Chris G. Van de Walle, Linda T. Romano, John E. Northrup, Rose M. Wood, Mark Teepe, Tanya Schmidt, Noble M. Johnson, Room-temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure, phys. status sol. (a) 176, 49 (1999)
  2. M.D. McCluskey, C.G. Van de Walle, N.M. Johnson, D.P. Bour, M. Kneissl, DX Centers in AlGaN, Int. Journal of Modern Physics B, Vol. 13, No. 11, 1363 (1999)
  3. Michael Kneissl, David P. Bour, Chris G. Van de Walle, Linda T. Romano, John E. Northrup, Rose M. Wood, Mark Teepe, Noble M. Johnson, Room-temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure, Appl. Phys. Lett. Vol. 75, No. 4, 581 (1999)
  4. M.D. McCluskey, L.T. Romano, C.G. van de Walle, J.E. Nortrup, D.P. Bour, M. Kneissl, T. Suski, J. Jun, Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures, Appl. Phys. Lett. Vol. 75, No. 25, 3950 (1999)
  5. W.S. Wong, T. Sands, N.W. Cheung, M. Kneissl, D.P. Bour, P. Mei, L.T. Romano, N.M. Johnson, Fabrication of thin film InGaN light-emitting diode membranes by laser liftoff, Appl. Phys. Lett., Vol. 75, No. 10, 1360 (1999)
  6. William S. Wong, Tim Sands, Nathan Chung, Michael Kneissl, David Bour, Ping Mei, Linda Romano and Noble Johnson, Ubiquitous blue LEDs: the integration of GaN thin films with dissimilar substrate materials by wafer bonding and laser lift-off, Compound Semiconductor, Vol. 5(9), 54 (1999)
  7. M. Kneissl, D.P. Bour, L.T. Romano, D. Hofstetter, M. McCluskey, C. Dunnrowicz, R.M. Wood, N.M. Johnson, Characterization of InGaN/AlGaN Multiple Quantum Well Laser Diodes, SPIE Proceedings 3625-01 (1999)
  8. D.P. Bour, M. Kneissl, D. Hofstetter, L.T. Romano, M. McCluskey, C.G. Van de Walle, B.S. Krusor, C. Dunnrowicz, R. Donaldson, J. Walker, N.M. Johnson, MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, Materials Science & Engineering B, Vol 59, 33 (1999)
  9. M.D. McCluskey, L.T. Romano, B.S. Krusor, D. Hofstetter, D.P. Bour, M. Kneissl, N.M. Johnson, T. Suski, J. Jun, Disordering of InGaN/GaN Superlattices after High-Pressure Annealing, MRS Internet J. Nitride Semicond. Res. 4S1, G3.42 (1999)
  10. D. Hofstetter, R.L. Thornton, L.T. Romano, D.P. Bour, M. Kneissl, R.M. Donaldson, C. Dunnrowicz, Characterization of InGaN/GaN-based multiple-quantum-well distributed feedback lasers, MRS Internet J. Nitride Semicond. Res. 4S1, G2.2 (1999)
  11. A.N. Cartwright, P.M. Sweeney, T. Prunty, D.P. Bour, M. Kneissl, R.M. Donaldson, C. Dunnrowicz, Electric field distribution in p-i-n GaN/InGaN multiple-quantum-well structures, MRS Internet J. Nitride Semicond. Res. 4S1, (1999)
  12. D. Streb,M. Vitzethum, P. Kiesel, G.H. Dohler, M. Kneissl, Extremely fast ambipolar diffusion in n-i-p-i doping superlattices investigated by an all-optical pump-and-probe technique, Superlattices and Microstructures, Vol. 25, 21 (1999)
  13. D.P. Bour, M. Kneissl, C. Dunnrowicz, R. Donaldson, N.M. Johnson, G. Evans, Stripe width dependence of threshold current for gain-guided AlGaInN laser diodes, Appl. Phys. Lett., Vol. 74, No. 3, 404 (1999)
  14. P. Vogt, A.M. Frisch, Th. Hannappel, S. Visbeck, F. Willig, Ch. Jung, N. Esser, W. Braun, W. Richter, Atomic Surface Structure of MOVPE-grown InP(001) , Phys. stat. sol. (b) 215, 737 (1999)
  15. Th. Hannappel, S. Visbeck, J. Mahrt, K. Knorr, P. Vogt, N. Esser, A.M. Frisch, M. Zorn, W. Richter, F. Willig , Characterization of clean P-rich MOCVD-grown InP(001)-films, Proc. 8th European Workshop on Metal-Organic Vapour Phase Epitaxy and Related Growth Techniques, June (1999), Prague, T2M 1, Edited by V. Gregor and K. Zaveta, ISBN 80-238-3551-3
  16. N. Esser, W.G. Schmidt, J. Bernholc, A:M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, Th. Hannappel, S. Visbeck, GaP(001) and InP(001): Reflectance Anisotropy and Surface Geometry, J. Vac. Sci. Technol. B 17, 1691 (1999)
  17. P. Vogt, Th. Hannappel, S. Visbeck, K. Knorr, N. Esser, W. Richter, Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE, Phys. Rev. B60, R5117 (1999)

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