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Inhalt des Dokuments

1996

  1. S.U. Dankowski, D. Streb, M. Ruff, P. Kiesel, M. Kneissl, B. Knupfer, and G.H. Dohler, U.D. Keil, A.K. Verma, Above Band Gap Absorption Spectra of the Arsenic Antisite Defect in Low Temperature Grown GaAs and AlGaAs, Appl. Phys. Lett., Vol. 68, 37 (1996)
  2. U. Pfeiffer, M. Kneissl, B. Knupfer, N. Muller, P. Kiesel, and G.H. Dohler, J.S. Smith, Dynamical switching behaviour of n-i-p-i modulator structures, Appl. Phys. Lett. 68 (13), 1838-1840 (1996)
  3. M. Ruff, D. Streb, S.U. Dankowski, S. Tautz, P. Kiesel, B. Knupfer, M. Kneissl, N. Linder, G.H. Dohler, U.D. Keil, Polarisation dependence of the electro-absorption in low-temperature grown GaAs for above band gap energies, Appl. Phys. Lett. 68 (21), 2968-2970 (1996)
  4. U. Hilburger, M. Kneissl, P. Kiesel, B. Knupfer, H. Grothe, and G.H. Dohler, Monoltihic waveguide smart pixel for high--contrast and high--gain all-optical switching, Appl. Phys. Lett. 69 (6), 818-820 (1996)
  5. R. Windisch, M. Kneissl, P. Kiesel, B. Knüpfer, and G.H. Döhler, Low voltage high contrast n-i-p-i based waveguide modulators with alloyed selective contacts , IEEE Photonics Technology Letters, Vol. 8, 1325-1327 (1996)
  6. S. Tautz, S.U. Dankowski, M. Ruff, D. Streb, P. Kiesel, M. Kneissl, U.D. Keil and G.H. Döhler, Metal-semiconductor-metal-modulator structures based on electroabsorption in low temperature grown (Al)GaAs , CLEO Europe Technical Digest, 215 (1996)
  7. R. Windisch, M. Kneissl, P. Kiesel, and G.H. Döhler, Low voltage, high contrast n-i-p-i based waveguide modulator, CLEO Europe Technical Digest, (1996)
  8. S.U. Dankowski, P. Kiesel, D. Streb, M. Ruff, S. Tautz, B. Knüpfer, M. Kneissl, S. Malzer, U.D. Keil, J.B. Ibbetson, A.C. Gossard and G.H. Döhler, Polarization Dependent Electroabsorption in Non-Stochiometric GaAs and AlGaAs Grown at Low Substrate Temperatures, Proceedings of the 23rd ICPS, World Scientific, Singapore, M. Scheffler and R. Zimmermann, Eds., 1051-1054 (1996)
  9. M. Kneissl, P. Kiesel, N. Linder, H. Grothe, G.H. Dohler, Fast MSM modulators based on the two-dimensional Franz-Keldysh effect in MQW structures, SPIE Proceedings 2694, 165-173 (1996)
  10. U. Pfeiffer, M. Kneissl, P. Kiesel, J.S. Smith, G.H. Dohler, Fast electro-optic modulation with selectively contacted n-i-p-i structures, SPIE Proceedings 2694, 157-164(1996)
  11. B. Knupfer, P. Kiesel, M. Kneissl, N. Muller, U. Hilburger, S. Dankowski, A. Forster, G.H. Dohler, A novel monolithic waveguide-based smart pixel for high contrast, high gain and high speed all-optical switching, SPIE Proceedings 2695, 266-277 (1996)
  12. S. Malzer, M. Kneissl, P. Kiesel, K.H. Gulden, J.S. Smith, and G.H. Dohler, Properties and Applications of the Epitaxial shadow mask (ESM) MBE- Technique, Journal of Vacuum Science & Technology B, Vol.14, (no.3), 2175-2179 (1996)
  13. D. Streb, M. Ruff, S.U. Dankowski, P. Kiesel, M. Kneissl, S. Malzer, U.D. Keil, G.H. Dohler,, Optical characterization of low temperature grown GaAs by transmission measurements above band gap, Journal of Vacuum Science & Technology B, Vol.14, (no.3), 2275-2277 (1996)
  14. J. Schultz, S. Malzer, M. Kneissl, J.S. Smith, and G.H. Dohler, Many Body Effects and Charge Carrier Kinetics studied by Electro-optic experiments in Type-I Hetero n-i-p-i Structures with Selective Contacts, Sol. State Electron. 40, 683-686 (1996)

1998

  1. L.T. Romano, D. Hofstetter, M.D. McCluskey, D.P. Bour, M. Kneissl, Structural and optical properties of epitaxially overgrown 3rd order gratings for InGaN/GaN-based DFB lasers, Appl. Phys. Lett., Vol. 73, No. 19, 2706 (1998)
  2. D.P. Bour, M. Kneissl, D. Hofstetter, L.T. Romano, M.D. McCluskey, C. Van de Walle, B. Krusor, C. Dunnrowicz, R. Donaldson, J. Walker, N.M. Johnson, MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, Proceedings of the European MRS Meeting (1998)
  3. D. Hofstetter, R.L. Thornton, L.T. Romano, D.P. Bour, M. Kneissl, R.M. Donaldson, Room temperature pulsed operation of an InGaN/GaN-based electrically injected multiquantum well DFB laser, Appl. Phys. Lett., Vol. 73, No. 15, 2158 (1998)
  4. M.D. McCluskey, N.M. Johnson, C.G. van de Walle, D.P. Bour, M. Kneissl, W. Walukiewicz, Evidence for oxygen DX centers in AlGaN, Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, 531 (1998)
  5. S.M. Donovan, B. Gila, J.D. MacKenzie, C.G. Van de Walle, D.P. Bour, M. Kneissl, W. Walukiewicz, The role of the In source in InN growth from molecular beams, Symposium on Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, 525 (1998)
  6. D. Hofstetter, R.L. Thornton, M. Kneissl, D.P. Bour, C. Dunnrowicz, Demonstration of an InGaN/GaN-based optically pumped MQW DFB laser using holographically defined 3rd order gratings, Appl. Phys. Lett., Vol. 73, No. 14, 1928 (1998)
  7. D. Hofstetter, D. Sun, C. Dunnrowicz, M. Kneissl, D.W. Treat, Multi-wavelength light emitters for scanning applications fabricated by flipchip bonding, IEEE Photonics Technology Letters, Vol. 10, No. 10, 1371 (1998)
  8. D.P. Bour, M. Kneissl, L.T. Romano, M. McCluskey, C.G. Van deWalle, B.S. Krusor, R. Donaldson, J. Walker, C. Dunnrovicz, N.M. Johnson, Characteristics of InGaN/GaN Multiple Quantum Well Laser Diodes, IEEE Journal on Selected Topics in Quantum Electronics, Vol. 4, No. 3, 498 (1998)
  9. M. Kneissl, D.P. Bour, N.M. Johnson, L.T. Romano, B.S. Krusor, R. Donaldson, J. Walker, C. Dunnrovicz, Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching, Appl. Phys. Lett. 72 (13), 1539 (1998)
  10. M. Kneissl, D.P. Bour, B.S. Krusor, L.T. Romano, N.M. Johnson, M. McCluskey, W. Goetz, R.D. Bringans, Material characterization for III-nitride based light emitters, SPIE Proceedings 3279-10, 69-76 (1998)
  11. D.P. Bour, M. Kneissl, N.M. Johnson, L.T. Romano, B.S. Krusor, M. McCluskey, W. Goetz, R.D. Bringans, Characterization of AlGaInN heterostructures and laser diodes, SPIE Proceedings 3284-14, 94-102 (1998)
  12. M. Vitzethum, D. Streb, P. Kiesel, M. Kneissl, G.H. Dohler, New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices, Proceedings of the Second International Conference on Advanced Semiconductor Devices and Microsystems, 279 (1998)
  13. C.L. Chua, R.L. Thornton, D. Treat, M. Kneissl, C. Dunnrowicz, Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts, Appl. Phys. Lett., Vol. .9, 1001 (1998)
  14. M. McCluskey, N.M. Johnson, J. Boyce, M .Kneissl, Metastability of Oxygen Donors in AlGaN, Phys. Rev. Lett., Vol.80 (No. 18), 4008-4011 (1998)
  15. M. Kneissl, D. Hofstetter, D.P. Bour, R. Donaldson, J. Walker, N.M. Johnson, Dry-etching and characterization of mirros on III-nitride laser diodes from chemically assisted ion beam etching, Journal of Crystal Growth 189/190, 846-849 (1998)

1997

  1. B. Knüpfer, N. Müller, M. Welker, S.U. Dankowski, P. Kiesel, M. Kneissl, G.H. Döhler, Monolithic waveguide-based smart pixel operating at 120 Mb/s, IEEE Photonics Technology Letters 9 (no. 1), 97-99 (1997)
  2. S. Malzer, W. Geißelbrecht, U. Hilburger, M. Kneissl, P. Kiesel, R. Mayer and G.H. Döhler, Waveguide Modulator Structures with Soft Optical Confinement grown by the Epitaxial Shadow Mask (ESM) MBE-Technique , Journal of Crystal Growth, Vol.175-1762, 960-963 (1997)
  3. S.U. Dankowski, P. Kiesel, M. Ruff, D. Streb, S. Tautz, U.D. Keil, B. Knüpfer, M. Kneissl and G.H. Döhler, Optical and Electro-Optical Investigations of Low Temperature Grown GaAs and AlGaAs, Materials Science and Engineering B, Vol. 44, (no.1-3), 316-319 (1997)

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