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TU Berlin

Inhalt des Dokuments

Veröffentlichungen 2013 - 2015

  • Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy, P.H. Weidlich, M. Schnedler, V. Portz, H. Eisele, U. Strauß, R. E. Dunin-Borkowski, and Ph. Ebert, J.  Appl. Phys. 118, 035302 (2015).
  • Tb silicide nanowire growth on planar and vicinal Si(001) surfaces, S. Appelfeller, S. Kuls, and M. Dähne, Surface Science 641, 180 (2015).
  • Strong charge-carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy, D. Quandt, J.-H. Schulze, A. Schliwa, Z. Diemer, C. Prohl, A. Lenz, H. Eisele, A. Strittmatter, U.W. Pohl, M. Gschrey, S. Rodt, S. Reitzenstein, D. Bimberg, M. Lehmann, and M. Weyland, Phys. Rev. B 91, 235418 (2015).
  • Polarity-dependent pinning of a surface state, M. Schnedler, V. Portz, H. Eisele, R.E. Dunin-Borkowski, and P. Ebert, Phys. Rev. B 91, 205309 (2015).
  • Terbium induced nanostructures on Si(111), M. Franz, J. Große, R. Kohlhaas, and M. Dähne, Surface Science 637-638, 149 (2015).
  • Self-organized formation and XSTM-characterization of GaSb/GaAs quantum rings, A. Lenz and H. Eisele, in: Physics of quantum rings, edited by V.M. Fomin, p. 123 (Springer, Berlin 2014).
  • Tuning the Au-Free InSb Nanocrystal Morphologies Grown by Patterned Metal-Organic Chemical Vapor Deposition, A. Lin, J. N. Shapiro, H. Eisele, and D. L. Huffaker, Adv. Funct. Mater. 24, 4311 (2014).
  • Meandering of overgrown v-shaped defects in epitaxial GaN layers, P. H. Weidlich, M. Schnedler, V. Portz, H. Eisele, R. E. Dunin-Borkowski, and Ph. Ebert, Appl. Phys. Lett. 105, 012105 (2014).
  • Hidden surface states at non-polar GaN(10 -10) facets: Intrinsic pinning of nanowires, L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.-P. Nys, B. Grandidier, D. Stiévenard, R.E. Dunin-Borkowski, J. Neugebauer, and Ph. Ebert, Appl. Phys. Lett. 103, 152101 (2013).
  • Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers, P.H. Weidlich, M. Schnedler, H. Eisele, R.E. Dunin-Borkowski, and Ph. Ebert, Appl. Phys. Lett. 103, 142105 (2013).
  • Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers, P.H. Weidlich, M. Schnedler, H. Eisele, U. Strauß, R.E. Dunin-Borkowski, and Ph. Ebert, Appl. Phys. Lett. 103, 062101 (2013).
  • Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale, C. Prohl, A. Lenz, D. Roy, J. Schuppang, G. Stracke, A. Strittmatter, U. W. Pohl, D. Bimberg, H. Eisele, and M. Dähne, Appl. Phys. Lett. 102, 123102 (2013).
  • Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures, A. Lenz, E. Tournie, J. Schuppang, M. Dähne, and H. Eisele, Appl. Phys. Lett. 102, 102105 (2013).
  • Intrinsic bandgap of cleaved ZnO(11-20) surfaces, A. Sabitova, Ph. Ebert, A. Lenz, S. Schaafhausen, L. Ivanova, M. Dähne, A. Hoffmann, R. E. Dunin-Borkowski, A. Förster, B. Grandidier, and H. Eisele, Appl. Phys. Lett. 102, 021608 (2013).
  • Formation and atomic structure of self-assembled Dy silicide clusters on the Si(111)7×7 surface, M. Franz, S. Appelfeller, M. Rychetsky, and M. Dähne, Surface Science 609, 215 (2013). 
  • Antimony induced cluster formation on the Si(111)7×7 surface, S. Appelfeller, M. Franz, and M. Dähne, Surface Science 608, 109 (2013).
  • Metallic rare-earth silicide nanowires on silicon surfaces, M. Dähne, and M. Wanke, J. Phys.: Condens. Matter 25, 014012 (2013).

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