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TU Berlin

Inhalt des Dokuments

Veröffentlichungen 2007 - 2009

  • Adsorbate-induced restructuring of Pb mesas grown on vicinal Si(111) in the quantum regime, A. A. Khajetoorians, W. Zhu, J. Kim, S. Qin, H. Eisele, Z. Zhang, and C. Shih, Physical Review B 80, 245426 (2009).  
  • Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale, J. Grabowski, C. Prohl, B. Höpfner, M. Dähne, and H. Eisele, Applied Physics Letters 95, 233118 (2009).  
  • Formation of InAs/InGaAsP quantum-dashes on InP(001), A. Lenz, F. Genz, H. Eisele, L. Ivanova, R. Timm, D. Franke, H. Künzel, U. W. Pohl, and M. Dähne, Applied Physics Letters 95, 203105 (2009).
  • Erratum: "Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy" [Physica E 26 (2005) 231-235] , H. Eisele, R. Timm, and M. Dähne, Physica E 41, 1886 (2009).  
  • Energy surfaces of rare-earth silicide films on Si(111), M. Wanke, M. Franz, M. Vetterlein, G. Pruskil, B. Höpfner, C. Prohl, I. Engelhardt, P. Stojanov, E. Huwald, J.D. Riley, and M. Dähne, Surface Science 603, 2808-2814 (2009). 
  • Scanning tunneling microscopy on unpinned GaN(1-100) surfaces: Invisibility of valence-band states, Ph. Ebert, L. Ivanova, and H. Eisele, Physical Review B 80, 085316 (2009).
  • Contrast mechanisms in cross-sectional scanning tunneling microscopy of GaSb/GaAs type-II nanostructures, R. Timm, R.M. Feenstra, H. Eisele, A. Lenz, L. Ivanova, E. Lenz, and M. Dähne, Journal of Applied Physics 105, 093718 (2009).
  • Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy, H. Eisele, L. Ivanova, S. Borisova, M. Dähne, M. Winkelnkemper, and Ph. Ebert, Applied Physics Letters 94, 162110 (2009).
  • Structural and electronic properties of rare-earth silicide nanowires on Si(557), M. Wanke, K. Löser, G. Pruskil, and M. Dähne, Physical Review B 79, 155428 (2009).
  • Limits of In(Ga)As/GaAs quantum dot growth, A. Lenz, H. Eisele, R. Timm, L. Ivanova, R.L. Sellin, H.-Y. Liu, M. Hopkinson, U.W. Pohl, D. Bimberg, and M. Dähne, Physica Status Solidi (b) 246, 717 (2009).
  • Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy, Ph. Ebert, L. Ivanova, S. Borisova, H. Eisele, A. Laubsch, and M. Dähne, Applied Physics Letters 94, 062104 (2009).
  • Change of InAs/GaAs quantum dot shape and composition during capping, H. Eisele, A. Lenz, R. Heitz, R. Timm, M. Dähne, Y. Temko, T. Suzuki, and K. Jacobi, Journal of Applied Physics 104, 124301 (2008).
  • Self-organized formation of GaSb/GaAs quantum rings, R. Timm, H. Eisele, A. Lenz, L. Ivanova, G. Balakrishnan, D.L. Huffaker, and M. Dähne, Physical Review Letters 101, 256101 (2008).
  • Surface states and origin of the Fermi level pinning on nonpolar GaN(1100)surfaces, L. Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert, Applied Physics Letters 93, 192110 (2008).
  • Quantum ring formation and antimony segregation in GaSb/GaAs nanostructures, R. Timm, A. Lenz, H. Eisele, L. Ivanova, M. Dähne, G. Balakrishnan, D.L. Huffaker, I. Farrer, and D.A. Ritchie, Journal of Vacuum Science and Technology B 26, 1492 (2008).
  • The atomic structure of quantum dots, Mario Dähne, Holger Eisele, and Karl Jacobi, in: Semiconductor Nanostructures, ed. by D. Bimberg (Springer, Berlin, Heidelberg, 2008), p. 123.
  • Nitrogen-induced intermixing of InAsN quantum dots with the GaAs matrix, L. Ivanova, H. Eisele, A. Lenz, R. Timm, M. Dähne, O. Schumann, L. Geelhaar, and H. Riechert, Applied Physics Letters 92, 203101 (2008).
  • Formation of dysprosium silicide nanowires on Si(557) with two-dimensional electronic structure, M. Wanke, K. Löser, G. Pruskil, and M. Dähne, Journal of Applied Physics 103, 094319 (2008).
  • Structure of InAs quantum dots-in-a-well nanostructures, A. Lenz, H. Eisele, R. Timm, L. Ivanova, H.-Y. Liu, M. Hopkinson, U.W. Pohl, and M. Dähne, Physica E 40, 1988 (2008).
  • Erratum: "Atomically resolved structure of InAs quantum dots" [Appl. Phys. Lett. 78, 2309 (2001)], H. Eisele and K. Jacobi, Applied Physics Letters 90, 129902 (2007).
  • Submonolayer quantum dots for high speed surface emitting lasers, N.N. Ledentsov, D. Bimberg, F. Hopfer, A. Mutig, V.A. Shchukin, A.V. Sava'lev, G. Fiol, E. Stock, H. Eisele, M. Dähne, D. Gerthsen, U. Fischer, D. Litvinov, A. Rosenauer, S.S. Mikhrin, A.R. Kovsh, N.D. Zakharov, and P. Werner, Nanoscale Research Letters 2, 417 (2007).
  • 20 Gb/s 85°C error-free operation of VCSELs based on submonolayer deposition of quantum dots, F. Hopfer, A. Mutig, G. Fiol, M. Kuntz, V.A. Shchukin, V.A. Haisler, T. Warming, E. Stock, S.S. Mikhrin, I.L. Krestnikov, D.A. Livshits, A.R. Kovsh, C. Bornholdt, A. Lenz, H. Eisele, M. Dähne, N.N. Ledentsov, and D. Bimberg, IEEE Journal of Selected Topics in Quantum Electronics 13, 1302 (2007).
  • Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters, N.N. Ledentsov, F. Hopfer, A. Mutig, V.A. Shchukin, A.V. Sava’lev, G. Fiol, M. Kuntz, V.A. Haisler, T. Warming, E. Stock, S.S. Mikhrin, A.R. Kovsh, C. Bornholdt, A. Lenz, H. Eisele, M. Dähne, N.D. Zakharov, P. Werner, and D. Bimberg, Proc. SPIE 6468, 646810 (2007).

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