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TU Berlin

Inhalt des Dokuments

Veröffentlichungen 2004 - 2006

  • Structural investigation of hierarchically self-assembled GaAs/AlGaAs quantum dots, A. Lenz, R. Timm, H. Eisele, L. Ivanova, D. Martin, V. Voßebürger, A. Rastelli, O.G. Schmidt, and M. Dähne, Physica Status Solidi (b) 243, 3976 (2006).
  • Onset of GaSb/GaAs quantum dot formation, R. Timm, A. Lenz, H. Eisele, L. Ivanova, K. Pötschke, U.W. Pohl, D. Bimberg, G. Balakrishnan, D.L. Huffaker, and M. Dähne, Physica Status Solidi (c) 3, 3971 (2006).
  • A cross-sectional scanning tunneling microscopy study of GaSb/GaAs nanostructures, R. Timm, A. Lenz, J. Grabowski, H. Eisele, and M. Dähne, Proceedings of MSM 14, ed. by A.G. Cullis and J.L. Hutchison (Springer Proceedings in Physics, Vol. 107, 2006), p. 479.
  • Structure of InAs/GaAs quantum dots grown with Sb surfactant, R. Timm, H. Eisele, A. Lenz, T.-Y. Kim, F. Streicher, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne, Physica E 32, 25 (2006).
  • Atomic structure of thin dysprosium-silicide layers on Si(111), I. Engelhardt, C. Preinesberger, S.K. Becker, H. Eisele, and M. Dähne, Surface Science 600, 755 (2006).
  • Formation and atomic structure of GaSb quantum dots in GaAs studied by cross-sectional scanning tunneling microscopy, R. Timm, A. Lenz, J. Grabowski, H. Eisele, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne, in: Proceedings of EW-MOVPE XI, ed. by E. Kapon and A. Rudra (Lausanne 2005), p. 39.
  • Limits of InGaAs/GaAs quantum dot growth studied by cross-sectional scanning tunneling microscopy, A. Lenz, H. Eisele, R. Timm, S.K. Becker, R.L. Sellin, U.W. Pohl, D. Bimberg, and M. Dähne, in: Proceedings of EW-MOVPE XI, ed. by E. Kapon and A. Rudra (Lausanne 2005), p. 31.
  • Structure and electronic properties of dysprosium silicide nanowires on vicinal Si(001), C. Preinesberger, G. Pruskil, S.K. Becker, M. Dähne, D.V. Vyalikh, S.L. Molodtsov, C. Laubschat, and F. Schiller, Applied Physics Letters 87, 083107 (2005)
  • Effects of strain and confinement on the emission wavelength of InAs quantum dots due to a GaAs1-xNx capping layer, O. Schumann, S. Birner, M. Baudach, L. Geelhaar, H. Eisele, L. Ivanova, R. Timm, A. Lenz, S.K. Becker, M. Povolotskyi, M. Dähne, G. Abstreiter, and H. Riechert, Physical Review B 71, 245316 (2005).
  • Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy, R. Timm, J. Grabowski, H. Eisele, A. Lenz, S.K. Becker, L. Müller-Kirsch, K. Pötschke, U.W. Pohl, D. Bimberg, and M. Dähne, Physica E 26, 231 (2005).
  • Queuing atoms: Self-Assembly of Silicide Nanowires, C.Preinesberger, D. V. Vyalikh, S. L. Molodtsov, F. Schiller, G. Pruskil, S. K. Becker, C. Laubschat, and M. Dähne, BESSY Highlights 2003, 22 (2004)
  • Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy, A. Lenz, H. Eisele, R. Timm, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg , and M. Dähne, Applied Physics Letters, 85, 3848 (2004)
  • Structure and intermixing of GaSb/GaAs quantum dots, R. Timm, H. Eisele, A. Lenz, S. K. Becker, J. Grabowski, T.-Y. Kim, L. Müller-Kirsch, K. Pötschke, U. W. Pohl, D. Bimberg, and M. Dähne, Applied Physics Letters, 85, 5890 (2004)

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