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TU Berlin

Inhalt des Dokuments

Veröffentlichungen 2001 - 2003

  • Photoluminescence of individual InGaAs quantum dots, K. Hodeck, I. Manke, M. Geller, J.L. Spithoven, J. Lorbacher, R. Heitz, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne, Institute of Physics Conference Series, 171, P226 (2003)

 

 

  • Atomic Structure of InAs and InGaAsQuantum Dots Studied by Cross-Sectional Scanning Tunneling Microscopy, H. Eisele, A. Lenz, R. Timm, Ch. Hennig, M. Ternes, F. Heinrichsdorff, A. Krost, R. Sellin, U. W. Pohl, D. Bimberg, T. Wehnert, E.Steimetz, W. Richter, and M. Dähne, Institute of Physics Conference Series, 171, P199 (2003
    No abstract online

 

 

  • Self-assembled structures of Dy silicides on Si(001) and Si(111) surfaces, S.K. Becker, C. Preinesberger, I. Engelhardt, M. Wanke, S. Vandré, H. Eisele, and M. Dähne, Institute of Physics Conference Series, 171, D9 (2003)

 

 

  • Multiline photoluminescence of single InGaAs quantum dots K. Hodeck, I. Manke, M. Geller, R. Heitz, F. Heinrichsdorff, A. Krost, D. Bimberg, H. Eiseleand M. Dähne, physica status solidi (c), 4, 1209 (2003)

 

 

  • An STM Study of the 2×7 Dysprosium-Silicide Nanowire Superstructure on Si(001) C. Preinesberger, S. K. Becker, and M. Dähne, Proceedings of 12th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques 696, 837 (2003)

 

 

  • Room-Temperature Observation of Standing Electron Waves on GaAs(110) at Surface Steps O. Flebbe, H. Eisele, R. Timm, and M. Dähne, Proceedings of 12th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques 696, 699 (2003)

     

 

 

  • Low budget UHV STM built by physics students for use in a laboratory exercise course S. K. Becker, J. Grabowski, T.-Y. Kim, L. Amsel, F. Bechtel, N. Tschirner, I. Mantouvalou, A. Lenz, R. Timm, K. Hodeck, F. Streicher, G. Pruskil, H. Eisele and M. Dähne, Proceedings of 12th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques 696, 216 (2003)

     

 

 

  • Queuing atoms: Self-Assembly of Silicide Nanowires C. Preinesberger, D. V. Vyalikh, S. L. Molodtsov, F. Schiller, G. Pruskil, S. K. Becker, C. Laubschat and M. Dähne, BESSY Highlights 2003, 22 (2003)

 

 

  • Segregation effects during GaAs overgrowth of InAs and InGaAs quantum dots studied by cross-sectional scanning tunneling microscopy H. Eisele, R. Timm, A. Lenz, M. Ternes, S. K. Becker, and M. Dähne, physica status solidi (c), 4, 1129 (2003)

     

 

 

  • Atomic Structure of InAs and InGaAs Quantum Dots Determined by Cross-Sectional Scanning Tunneling Microscopy, H. Eisele, A. Lenz, Ch. Hennig, R. Timm, M. Ternes, and M. Dähne, Journal of Crystal Growth 248, 322 (2003).

 

 

  • Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix, A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S.K. Becker, R.L. Sellin, U.W. Pohl, D. Bimberg, and M. Dähne, Applied Physics Letters 81, 5150 (2002)

     

 

 

  • Rasternahfeldmikroskopie an einzelnen In0,4Ga0,6AS/GaAS-Quantenpunkten, Ingo Stamatis Manke, Berlin Studies in Solid State Physics 11, (2002).

 

 

  • Cross-Sectional Scanning Tunneling Microscopy at InAs Quantum Dots, Mario Dähne und Holger Eisele, in Nano-Optoelectronics, ed. by M. Grundmann, Springer-Verlag, (2002), chap. 5.

 

 

  • Structure of DySi2 nanowires on Si(001), C. Preinesberger, S. K. Becker, S. Vandré, T. Kalka, and M. Dähne, Journal of Applied Physics 91, p.1695 (2002).

 

 

  • Cross-Sectional Scanning Tunneling Microscopy of InAs/GaAs Quantum Dots,Holger Eisele, Berlin Studies in Solid State Physics 10, (2002).

 

 

  • Ringlike emission profiles in scanning near-field photoluminescence images of single InGaAs quantum dots, M. Geller, I. Manke, K. Hodeck, R. Heitz, M. Dähne,  Physical Review B 64, 233312 (2001).

 

 

  • Lanthanide-Silicide Films on Silicon Surfaces,M. Dähne, S. Vandré, C. Preinesberger, S. K. Becker, W. Busse, and T. Kalka Adv. in Solid State Physics 41, 227 (2001).

 

 

  • Conservation of flatband conditions for DySi2 monolayers on n-type Si(111), S. Vandré, C. Preinesberger, W. Busse, and M. Dähne,  Applied Physics Letters 78, 2012(2001).

 

 

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