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TU Berlin

Inhalt des Dokuments

Veröffentlichungen 1998 - 2000

  • Growth and electronic structure of lanthanide silicides on Si(111) and Si(001), S. Vandré, Berlin Studies in Solid State Physics 4, (2000).

 

 

  • Hot-electron transport processes in ballistic-electron emission microscopy at Au-Si interfaces, M. Dähne-Prietsch, T. Kalka, Journal of Electron Spectroscopy and Related Phenomena 109, 211 (2000).

 

 

  • The stoichiometry of InAs quantum dots determined by cross-sectional scanning-tunneling microscopy, H. Eisele, O. Flebbe, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, physica status solidi (b) 215, (1999).

 

 

  • Atomic structure of stacked InAs quantum dots grown by metal-organic chemical-vapor depostion, O. Flebbe, H. Eisele, T. Kalka, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, Journal of Vacuum Science and Technology B 17, 1639 (1999).

 

 

  • Finite linewidth in the photoluminescence of In0.4Ga0.6As quantum dots, J.L. Spithoven, J. Lorbacher, I. Manke, F. Heinrichsdorff, A Krost, D. Bimberg, and M. Dähne-Prietsch,  Journal of Vacuum Science and Technology B 17, 1632 (1999).

 

 

  • Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111), S.Vandré, C. Preinesberger, T. Kalka, and M. Dähne-Prietsch,  Journal of Vacuum Science and Technology B 17, 1682 (1999).

 

 

  • Cross-sectional scanning-tunneling miroscopy of stacked InAs quantum dots, H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Dähne-Prietsch, Applied Physics Letters 75, 106 (1999).

 

 

  • Flat-band conditions observed for lanthanide silicide monolayers on n-type Si(111), S. Vandré, T. Kalka, C. Preinesberger, and M. Dähne-Prietsch,  Physical Review Letters 82, 1927 (1999); Erratum, ibid., Physical Review Letters 82, 4370 (1999).

 

 

  • SNOM-induced photoluminescence of individual InGaAs quantum dots using etched metal-coated fiber tips, I. Manke, J. Lorbacher, L. Spithoven, F. Heinrichsdorff, and M. Dähne-Prietsch, Surface and Interface Analysis 27, 491 (1999).

 

 

  • Cross-sectional STM study of InAs quantum dots for laser devices, H. Eisele, O. Flebbe, T. Kalka, and M. Dähne-Prietsch, Surface and Interface Analysis 27, 537 (1999).

 

 

  • Formation of dysprosium silicide wires on Si(001), C. Preinesberger, S. Vandré, T. Kalka, and M. Dähne-Prietsch, Journal of Physics D: Applied Physics 31, L43 (1998).

 

 

  • Interface and bulk effects in the attenuation of low-energy electrons through CaF2 thin films, J.E. Ortega, F.J. García de Abajo, P.M. Echenique, I. Manke, T. Kalka, M. Dähne-Prietsch, D. Ochs, S.L. Molodtsov, and A. Rubio, Physical Review B 58, 2233 (1998).

 

 

  • A low-temperature scanning-nearfield optical microscope for photoluminescence at semiconductor structures, I. Manke, D. Pahlke, J. Lorbacher, W. Busse, T. Kalka, W. Richter, and M. Dähne-Prietsch, Applied Physics A 66, S381 (1998).

 

 

  • STM study of epitaxial Dy silicides on Si(111) and Si(001) using ultra-sharp tips prepared by ion bombardment, T. Kalka, C. Preinesberger, S. Vandré, and M. Dähne-Prietsch, Applied Physics A 66, S1073 (1998).

 

 

  • Photoluminescence of buried InGaAs/GaAs quantum dots spectrally imaged by scanning nearfield optical microscopy, D. Pahlke, I. Manke, F. Heinrichsdorff, M. Dähne-Prietsch, and W. Richter, Applied Surface Science 123/124, 400 (1998).

 

 

  • Growth and electronic structure of Dy silicide on Si(111), S. Vandré, T. Kalka, C. Preinesberger, I. Manke, H. Eisele, M. Dähne-Prietsch, R. Meier, E. Weschke, and G. Kaindl, Applied Surface Science 123/124, 100 (1998).

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