direkt zum Inhalt springen

direkt zum Hauptnavigationsmenü

Sie sind hier

TU Berlin

Inhalt des Dokuments

Veröffentlichungen 1994 - 1997

  • Low density of states at the epitaxial CaF2/Si(111) interface, M. Dähne-Prietsch, I. Manke, T. Kalka, H.J. Wen, and G. Kaindl, Journal of Physics D: Applied Physics 30, L48 (1997).

  • Growth and electronic structure of epitaxial interfaces of Dy and Er silicides with Si(111),I. Manke, T. Kalka, M. Dähne-Prietsch, H.J. Wen, and G. Kaindl, in: The physics of semiconductors, ed. by M. Scheffler and R. Zimmermann, p. 1071 (World Scientific, Singapore, 1996).

  • Ballistic-electron emission microscopy at Au/Si(111): indication of k||-conservation at non-epitaxial interfaces, T. Kalka, M. Dähne-Prietsch, and G. Kaindl, in: The physics of semiconductors, ed. by M. Scheffler and R. Zimmermann, p. 1015 (World Scientific, Singapore, 1996).

  • Lateral confinement of surface states on stepped Cu(111), O. Sánchez, J.M. García, P. Segovia, J. Alvarez, A.L. Vázquez de Parga, J.E. Ortega, M. Prietsch, and R. Miranda,  Physical Review B 52, 7894 (1995).

  • Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al-induced p+-doping,
    H.J. Wen, M. Dähne-Prietsch, A. Bauer, M.T. Cuberes, I. Manke, and G. Kaindl, Journal of Vacuum Science and Technology A 13, 2399 (1995).

  • Formation of the CeSix/Si(111) interface, I. Manke, H.J. Wen, A. Höhr, A. Bauer, M. Dähne- Prietsch, and G. Kaindl, Journal of Vacuum Science and Technology B 13, 1657 (1995).

     

  • Stability of CaF2/Si(111) and Al/CaF2/Si(111) interface systems studied with photoelectron spectroscopy and scanning-tunneling microscopy,H.J. Wen, M. Dähne-Prietsch, A. Bauer, I. Manke, and G. Kaindl, Journal of Vacuum Science and Technology B 13, 1645 (1995).

  • p+-doping of Si by Al diffusion upon annealing Al/n-Si(111),H.J. Wen, M. Prietsch, A. Bauer, M.T. Cuberes, I. Manke, and G. Kaindl, Applied Physics Letters 66, 3010 (1995).

  • Ballistic-electron emission microscopy (BEEM): studies of metal/semiconductor interfaces with nanometer resolution,Mario Prietsch, Physics Reports 253, 163 (1995).

  • Surface localized states on InAs(110), D.M. Swanston, A.B. McLean, D.N. McIlroy, D. Heskett, R. Ludeke, H. Munekata, M. Prietsch, and N.J. DiNardo, Surface Science 312, 361 (1994).

  • Probing the CaF2 density of states at Au/CaF2/n-Si(111) interfaces with photoelectron spectroscopy and ballistic-electron emission microscopy, M.T. Cuberes, A. Bauer, H.J. Wen, M. Prietsch, and G. Kaindl, Journal of Vacuum Science and Technology B 12, 2646 (1994).

  • Ballistic-electron emission microscopy at the Au/n-Si(111)7×7 interface,M.T. Cuberes, A. Bauer, H.J. Wen, D. Vandré, M. Prietsch, and G. Kaindl,  Journal of Vacuum Science and Technology B 12, 2422 (1994).

  • Ballistic-electron emission microscopy study of the Au/Si(111)7×7 and Au/CaF2/Si(111)7×7 interfaces, M.T. Cuberes, A. Bauer, H.J. Wen, M. Prietsch, and G. Kaindl, Applied Physics Letters 64, 2300 (1994).

  • Hot-electron transport in ballistic-electron emission microscopy: influence of impact ionization,A. Bauer, M.T. Cuberes, M. Prietsch, G. Kaindl, and R. Ludeke, in: Formation of semiconductor interfaces, ed. by B. Lengeler, H. Lüth, W. Mönch, and J. Pollmann, p. 333 (World Scientific, Singapore, 1994).

 

 

 

Zusatzinformationen / Extras

Direktzugang

Schnellnavigation zur Seite über Nummerneingabe