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TU Berlin

Inhalt des Dokuments

Dr. Andrea Lenz

Lupe

TU Berlin
Institut für Festkörperphysik
EW 4-1, Room 415
Hardenbergstr. 36
10623 Berlin

e-mail:
phone: 0049-(0)30-314-22057
fax: 0049-(0)30-314-26181

Research

I am principal investigator of the project scanning tunneling microscopy and -spectroscopy of GaP layers on Si(001) supported by the German Research Foundation DFG, Project LE 3317/1-2. In this project the structural and electronic properties of antiphase boundaries and their influence on nano-structured samples will be investigated. The goal is to achieve a physical understanding of the growth processes at the GaP/Si(001) interface as well as of the structural and electronical properties of defects within the GaP layer.

My main research backgrounds are the structural and electronic properties of III-V semiconductor surfaces, interfaces and nanostructures as well as nitride semiconductors. Using cross-sectional scanning tunneling microscopy and -spectroscopy these material systems can be investigated on the atomic scale. This leads to a fundamental understanding of growth and formation processes resulting in an optimization of optoelectronic devices.

Scientific Visits

  • 2014, July to October
    Postdoctoral Fellow with Prof. Minjoo Larry Lee
    Department of Electrical Engineering
    Yale University (New Haven, USA)

Publications (selection)

Publication list (last updated: 02/2017) (PDF, 62,9 KB)

C. Prohl, H. Döscher, P. Kleinschmidt, T. Hannappel, and A. Lenz,
Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001),
J. Vac. Sci. Technol. A 34, 031102 (2016).
http://dx.doi.org/10.1116/1.4945992

C.S. Schulze, X. Huang, C. Prohl, V. Füllert, S. Rybank, S.J. Maddox, S.D. March, S.R. Bank, M.L. Lee, and A. Lenz,
Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate,
Appl. Phys. Lett. 108, 143101 (2016).
http://dx.doi.org/10.1063/1.4945598

D. Quandt, J.-H. Schulze, A. Schliwa, Z. Diemer, C. Prohl, A. Lenz, H. Eisele, A. Strittmatter, U.W. Pohl, M. Gschrey, S. Rodt, S. Reitzenstein, and D. Bimberg, M. Lehmann, M. Weyland,
Strong charge carrier localization in InAs/GaAs submonolayer stacks prepared by Sb-assisted metalorganic vapor-phase epitaxy,
Phys. Rev. B 91, 235418 (2015).
http://dx.doi.org/10.1103/PhysRevB.91.235418

A. Lenz and H. Eisele
Self-organized Formation and XSTM-Characterization of GaSb/GaAs Quantum Rings
in PHYSICS OF QUANTUM RINGS, Springer-Series: NanoScience and Technology
Fomin, Vladimir M. (Ed.), ISBN: 978-3-642-39196-5 (Print) 978-3-642-39197-2 (Online) (2014)
http://www.springer.com/us/book/9783642391965

A. Lenz, E. Tournie, J. Schuppang, M. Dähne, and H. Eisele,
Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures,
Appl. Phys. Lett. 102, 102105 (2013)
http://dx.doi.org/10.1063/1.4795020

A. Lenz, F. Genz, H. Eisele, L. Ivanova, R. Timm, D. Franke, H. Künzel, U. W. Pohl, and M. Dähne,
Formation of InAs/InGaAsP quantum-dashes on InP(001),
Appl. Phys. Lett. 95, 203105 (2009)
http://dx.doi.org/10.1063/1.3265733

A. Lenz, Dr. rer. nat. (Ph.D.)
Atomic structure of capped In(Ga)As and GaAs quantum dots for optoelectronic devices,
Dissertation (2008)

A. Lenz, H. Eisele, R. Timm, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, and M. Dähne,
Nanovoids in InGaAs/GaAs quantum dots observed by cross-sectional scanning tunneling microscopy,
Appl. Phys. Lett. 85, 3848 (2004)
http://dx.doi.org/10.1063/1.1808884

A. Lenz, R. Timm, H. Eisele, Ch. Hennig, S. K. Becker, R. L. Sellin, U. W. Pohl, D. Bimberg, and M. Dähne,
Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix,
Appl. Phys. Lett. 81, 5150 (2002)
http://dx.doi.org/10.1063/1.1533109

Conferences (selection)

2017

  • SPIE Photonics West
    January 28 - February 26, San Francisco (USA)
    Structural and electronical properties of antiphase domains in GaP layers grown on Si(001) for integration in optoelectronics (invited)

2016

  • 1st Workshop on Electronic Materials: Growth and Characterization at the Atomic Scale,
    January 21-22, Santa Barbara (USA)
    Atomic structure and electronic properties of anti-phase boundaries in GaP layers grown on Si(001) (invited)
  • 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces,
    January 17-21, Palm Springs (USA)
    Atomic Structure of III-V layers grown on GaP/Si(001) (oral, poster)

2015

  • 5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    September 6–11, Hsinchu (Taiwan)
    Scanning tunneling microscopy and -spectroscopy of III-V layers on GaP/Si(001) substrates (invited)
                 
  • 8th International Conference on Materials for Advanced Technology (ICMAT 2015)
    June 28 - July 3, Singapore (Singapore)
    InGaAs/GaP quantum dots for integration into silicon devices (oral)

2014

  • Frühjahrstagung der Deutschen Physikalischen Gesellschaft
    March 30 - April 4, Dresden (Germany)
    Self-organized formation and XSTM characterization of GaSb/GaAs Quantum rings (invited)

2013

  • EMN Open Access Week, Energy, Materials and Nanotechnology
    October 21-27, Chengdu (China)
    Atomic structure and electronic properties of GaSb/GaAs(001) quantum rings (invited)
  • 4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    September 29 - October 4, Lake Arrowhead (USA)
    Cross-sectional STM on III-V semiconductor nanostructures (invited)
  • 40th Conference on the Physics and Chemistry of Surfaces and Interfaces
    (PCSI-40)
    January 20-24, Hawaii (USA)
    Atomic structure and stoichiometry of tensile-strained GaAs/GaSb(001) nanostructures (oral, poster)

2012

  • 2nd Annual Nano-S&T-2012
    October 26-28, Qingdao (China)
    Submonolayer InAs/GaAs Depositions for High-Speed High-Temperature Stable Vertical-Cavity Surface-Emitting Lasers Studied by Cross-Sectional Scanning Tunneling Microscopy (invited)
  • Energy, Materials and Nanotechnology (EMN 2012 workshop)
    October 22-26, Chengdu (China)
    Atomic structure and stoichiometry of InGaAs/GaAs quantum dots on GaP(001) (invited)
  • 39th International Symposium on Compound Semiconductors (ISCS, CSWeek 2012)
    August 26-30, Santa Barbara (USA)
    Comparison of GaAs/GaSb(001) and GaSb/GaAs(001) nanostructures at the
    atomic scale
    (invited)
  • Center for High Technology Materials (CHTM)
    August 21-25, Albuquerque (USA)
    Tensile-strained GaAs/GaSb nanostructures studied by cross-sectional
    scanning tunneling microscopy
    (invited)
  • International Materials Research Congress (IMRC) 2012
    August 12-17, Cancun (Mexico)
    Atomic structure of tensile-strained GaAs/GaSb(001) nanostructures (oral)
  • 5th International Conference on Optical, Optoelectronic and Photonic
    Materials and Applications (ICOOPMA)
    June 3-7, Nara (Japan)
    Atomic structure of InAs/GaAs submonolayer depositions for vertical-cavity surface-emitting lasers (oral)
  • 16th International Conference on Metal Organic Vapor Phase Epitaxy
    (ICMOVPE-XVI)
    May 20-25, Busan (Korea)
    Properties of buried InAs/GaAs submonolayer depositions studied on the
    atomic scale
    (oral),
    and
    Phase separation effects of lattice matched InxGa1-xAsyP1-y layers on InP(001) (oral)
  • Université Montpellier 2
    April 22-25, Montpellier (France)
    Characterization of tensile-strained GaAs/GaSb nanostructures studied by
    cross-sectional scanning tunneling microscopy
    (invited)
  • Sfb 787 Blockseminar
    May 14-15, Graal-Müritz (Germany)
    Characterization of nanostructures using cross-sectional scanning tunneling microscopy (invited)
  • Frühjahrstagung der Deutschen Physikalischen Gesellschaft
    March 25-30, Berlin (Germany)
    Atomic imaging of binary and quaternary semiconductor nanostructures by
    cross-sectional STM
    (invited),
    and
    Characterization of tensile-strained GaAs/GaSb nanostructures (poster)
  • SPIE Photonics West
    January 21-26, San Francisco (USA)
    Atomic structure of submonolayer InAs/GaAs depositions for high-speed
    direct electro-optical data transmission in VCSELs
    (invited)

2011

  • 3rd International Workshop on: Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    September 11-16, Traunkirchen (Austria)
    Atomic structure of InAs/GaAs submonolayer depositions (poster, poster award)
  • Electronic Materials Conference (EMC) 2011
    June 22-24, Santa Barbara (USA)
    Atomic structure and optical properties of submonolayer InAs/GaAs depositions (oral), and
    Atomic structure of InAs/InGaAsP/InP(001) quantum dashes and decomposition of the InGaAsP matrix material (oral)
  • 23rd International Conference on Indium Phosphide and Related Materials (IPRM-23)
    May 22-26, Berlin (Germany)
    Atomic ordering and decomposition of lattice matched InxGa1-xAsyP1-y on InP(001) (oral)
  • 11th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN-11)
    April 4-8, Berlin (Germany)
    Atomic structure of InAs quantum dashes and the InGaAsP matrix on InP(001) (poster), and
    Atomic structure of submonolayer grown InAs depositions in GaAs (oral)
  • 38th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-38)
    January 16-20, San Diego (USA)
    Atomic structure of submonolayer grown InAs/GaAs quantum dots (oral, upgraded poster)

2010

  • Sfb 787 Doktorandenseminar
    November 5, Berlin (Germany)
    Atomic structure of submonolayer grown InAs/GaAs nanostructures (oral)
  • 18th International Vacuum Congress (IVC-18)
    August 23-27, Beijing (China)
    Atomic structure of submonolayer grown InAs/GaAs quantum dots (oral)
  • 30th International Conference on the Physics of Semiconductors (ICPS-30)
    July 25-30, Seoul (Korea)
    Formation of InAs/InGaAsP quantum dashes (poster)
  • 22nd International Conference on Indium Phosphide and Related Materials
    May 31-June 4, Takamatsu (Japan)
    InAs/InGaAsP/InP(001) nanostructures: A cross-sectional scanning tunneling microscopy study (poster)
  • 37th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-37)
    January 10-14, Santa Fe (USA)
    Decomposition of InGaAsP grown on InP(001) (oral, poster)
  • Sfb 787 Doktorandenseminar
    January 8, Berlin (Germany)
    Formation of InAs/InGaAsP Quantum-Dashes on InP(001) (oral)

2009

  • La Trobe University - Department of Physics
    September 29, Melbourne (Australia)
    Structural investigation of III-V semiconductor heterostructures and magic clusters on Si(111)-(7x7) (oral)
  • International Nano-Optoelectronics Workshop 2009 (i-NOW)
    August 2-15, Stockholm (Sweden) and Berlin (Germany)
    InAs/InGaAsP Nanostructures on InP(001) (oral, poster)

2008

  • 5th International Conference on Semiconductor Quantum Dots (QD 2008)
    May 11-16, Gyeongju (Korea)
    Limits of In(Ga)As/GaAs quantum dot growth (poster, student award), and
    Formation, atomic structure, and electronic properties of GaSb/GaAs quantum rings (oral) 
  • Frühjahrstagung der Deutschen Physikalischen Gesellschaft
    February 25-29 2008, Berlin (Germany)
    Limits of In(Ga)As/GaAs quantum dot growth (oral)
  • 35th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-35)
    January 13-17, 2008, Santa Fe (USA)
    Limits of quantum dot growth: nanovoids in the In(Ga)As/GaAs system (oral, poster)

2007

  • 13th International Conference on Modulated Semiconductor Structures (MSS-13) 
    July 15-20 2007, Genoa (Italy)
    Structure of InAs quantum dots-in-a-well nanostructures (poster)
  • International Workshop on Long Wavelength Quantum Dots: Growth and Applications
    July 5-6 2007, Rennes (France)
    Cross sectional scanning tunnelling microscopy investigation of InAs/InGaAs dots-in-a-well nanostructures (poster)
  • Microscopy of Semiconducting Materials Conference XV (MSM-XV)
    April 2-5 2007,Cambridge (United Kingdom)
    Change of quantum dot structure observed by a comparison of top-view and cross-sectional scanning tunnelling microscopy (oral)
  • One Day Quantum Dot Meeting
    January 19th 2007, Nottingham (United Kingdom)
    Structural changes of InAs/GaAs quantum dots during capping studied by cross-sectional scanning tunneling microscopy (poster)

2006

  • 28th International Conference on the Physics of Semiconductors (ICPS-28)
    July 24-28 2006, Vienna (Austria)
    Structure of In(Ga)As quantum dots for devices (poster) and InAs/GaAs quantum dots grown with Sb impurities (poster)
  • 4th International Conference on Semiconductor Quantum Dots
    May 1-5 2006, Chamonix-Mont Blanc (France)
    Structural investigation of GaAs/AlGaAs quantum dots (poster)
  • Frühjahrstagung der Deutschen Physikalischen Gesellschaft and 21st General Conference of the Condensed Matter Division of the European Physical Society
    March 26–31 2006, Dresden (Germany)
    Atomic structure of unstrained GaAs / AlGaAs quantum dots (oral)

2005

  • SANDiE Workshop: Structural characterization and modelling of self-assembled nanostructures
    November 23-24 2005, Eindhoven (Netherlands)
  • 23rd European Conference on Surface Science (ECOSS 23)
    September 4-9 2005, Berlin (Germany)
    Structural changes of InAs / GaAs quantum dots studied by cross-sectional scanning tunnelling microscopy (oral)
  • 10th International Conference on the Formation of Semiconductor Interfaces (ICFSI-10)
    July 3-8 2005, Aix-en-Provence (France)
    Limits of InGaAs/GaAs quantum dot growth studied by cross-sectional scanning tunneling microscopy (poster) and Change of InAs/GaAs quantum dot structures during capping (poster)
  • Workshop on growth, electronic and optical properties of Semiconductor Nanostructures
    June 9-12 2005, Kühlungsborn (Germany)
    Top-view and cross-sectional scanning tunneling microscopy of uncovered and buried InAs quantum dots (poster)
  • 11th European Workshop on Metalorganic Vapor Phase Epitaxy
    June 5-8 2005, Lausanne (Switzerland)
    Limits of InGaAs/GaAs quantum dot growth studied by cross-sectional scanning tunneling microscopy (poster)

2004

  • 14th International Conference on Crystal Growth and 12th International Conference on Vapor Growth and Epitaxy (ICCG-14 and ICVGE-12)
    August 9-13 2004, Grenoble (France)
    Structural change of InAs quantum dots upon GaAs overgrowth studied by (cross-sectional) STM (poster) and InGaAs nanovoids observed by cross-sectional scanning tunneling microscopy (oral)

2003

  • 12th International Conference on Scanning Tunneling Microscopy/Spectroscopy and Related Techniques
    July 21-25 2003, Eindhoven (Netherlands)
    Reversed truncated cone indium distribution of InGaAs quantum dots and quantum volcanoes observed by cross-sectional STM (poster)
  • Frühjahrstagung der Deutschen Physikalischen Gesellschaft
    March 24-28 2003, Dresden (Germany)
    Strukturveränderung von InAs/GaAs-Quantenpunkten beim Überwachsen (oral)
  • Workshop on Growth, electronic and optical properties of low-dimensional semiconductor quantum structures
    February 12-15, Schloß Ringberg Rottach-Egern (Germany)
    Indium composition distribution and volcano like structure of InGaAs quantum dots observed by XSTM ((poster)

1999 - 2002

  • Frühjahrstagung der Deutschen Physikalischen Gesellschaft
    March 11-15 2002, Regensburg (Germany)
    Die atomare Struktur von In0.8Ga0.2As Quantenpunkten untersucht mittels Rastertunnelmikroskopie an Querschnittsflächen (oral)
  • Frühjahrstagung der Deutschen Physikalischen Gesellschaft
    April 3-7 2001, Hamburg (Germany)
  • Frühjahrstagung der Deutschen Physikalischen Gesellschaft
    March 26-30 2000, Bonn (Germany)
  • Wilhelm und Else Heraeus-Ferienkurs für Physik:
    Festkörperspektroskopie: Grundlagen und aktuelle Anwendungen
    September 27 - October 8 1999, Dresden (Germany)

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