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Silicide thin films
Silicides of the rare earths, such as dysprosium, are known to form a variety of two-dimensional epitaxial layers on Si(111). Such film structures can be prepared using MBE by deposition of thin Dy films on clean Si surfaces and subsequent annealing at temperatures of 500 - 700 °C. Depending on the Dy coverage, submonolayer, monolayer and multilayer silicide structures are formed . The monolayer and multilayer films consist of hexagonal DySi2 and Dy3Si5, respectively, and are characterized by a two-dimensional metallicity .
Typical STM image of the 1x1 reconstructed hexagonal DySi2 monolayer and the √3x√3 reconstructed Dy3Si5 multilayer. The right image shows an atomically resolved detail of the DySi2 monolayer .
ARPES data (left) showing the electron energy dispersion (top) and the Fermi surface (bottom) of the DySi2 monolayer and the respective schematic representations (right) .
 Atomic structure of thin dysprosium-silicide layers on Si(111), I. Engelhardt, C. Preinesberger, S.K. Becker, H. Eisele, and M. Dähne, Surface Science 600, 755 (2006).
 Energy surfaces of rare-earth silicide films on Si(111), M. Wanke, M. Franz, M. Vetterlein, G. Pruskil, B. Höpfner, C. Prohl, I. Engelhardt, P. Stojanov, E. Huwald, J. Riley, and M. Dähne, Surface Science 603, 2808 (2009).