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Development of quantum dots for future applications in quantum communications

Schematic of the (111)-plane in a GaAs crystal.
Lupe

The project is dedicated to the fabrication and investigation of InGaAs quantum dots on GaAs(111) substrates. Theoretical investigations have shown that such quantum dots are promising candidates for the generation of entangled photon pairs for, e.g., quantum communication schemes. The project will advance the nontrivial growth of such quantum dots.

Partner:

Prof. Dr. V. Haisler, Institute of Semiconductor Physics in Novosibirsk, Russia

Finished: 30.6.2015

Funded by:

Federal Ministry of Education and Research, Grant-No.: 01DJ12097

References:

A. Schliwa et al., “(111)‐Grown In(Ga)As/GaAs Quantum dots as ideal source of entangled photon pairs”, Phys. Rev. B 80, 161307(2009).

E. Stock et al., „Single‐photon emission from InGaAs quantum dots grown on (111) GaAs”, Appl. Phys. Lett.96, 93112 (2010).

 

 

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