direkt zum Inhalt springen

direkt zum Hauptnavigationsmenü

Sie sind hier

TU Berlin

Inhalt des Dokuments

Publikationen 2010 - 2008

2010

Excited state properties of donor bound excitons in ZnO
Bruno. K. Meyer, Joachim Sann, Sebastian Eisermann, Stefan Lautenschlaeger,
Markus R. Wagner, Martin Kaiser, Gordon Callsen, Juan S. Reparaz A. Hoffmann
Phys. Rev. B 82 (2010), 115207
paper (PDF, 494,1 KB)

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD
M. Buegler, S. Gamage, R. Atalay, J. Wang, I. Senevirathna, R. Kirste, T. Xu, M. Jamil,
I. Ferguson, J. Tweedie, R. Collazo, A. Hoffmann, Z. Sitar, N. Dietz 
Proc. SPIE 7784 (2010),  77840F
paper (PDF, 657,3 KB)

The influence of group V/III molar precursor ratio on the structural properties of InGaN layers grown by HPCVD
G. Durkaya, M. Buegler, R. Atalay, I. Senevirathna, M. Alevli, O. Hitzemann, M. Kaiser,
R. Kirste, A. Hoffmann, N. Dietz 
phys. stat. sol. (a) 207 (2010), 1379

Large internal dipole moment in InGaN/GaN quantum dots
Irina A. Ostapenko, Gerald Hönig, Christian Kindel, Sven Rodt, Andre Strittmatter,
Axel Hoffmann, Dieter Bimberg 
Appl. Phys. Lett. 97 (2010), 063103
paper (PDF, 535,6 KB)

Optical properties of InN grown on templates with controlled surface polarities
Ronny Kirste, Markus R. Wagner, Jan H. Schulze, Andre Strittmatter, Ramon Colazzo, Zlatko Sitar, Mustafa Alevli, Nikolaus Dietz, Axel Hoffmann 
phys. stat sol. (a) 207 (2010), 2351

Molecular precursor route to a metastable from of zinc oxide
Carlos Lizandara Pueyo, Stephan Siroky, Steve Landsmann, Maurits W. E. van den Berg, Markus R. Wagner, Juan S. Reparaz, Axel Hoffmann, Sebastian Polarz
Chem. Mater. 22 (2010), 4263
paper (PDF, 983,4 KB)

Exciton fine-structure splitting in GaN/AlN quantum dots
C. Kindel, S. Kako, T. Kawano, H. Oiishi, Y. Arakawa, G. Hönig, M. Winkelnkemper, A. Schliwa,  A. Hoffmann, D. Bimberg
Physical Review B 81 (2010), 241309 (R)
paper (PDF, 334,4 KB)

Reduction of the transverse effective charge of optical phonons in ZnO
under pressure
J. S. Reparaz,1 L. R. Muniz,2 M. R. Wagner,1 A. R. Goñi,2 M. I. Alonso,2 A. Hoffmann,1and B. K. Meyer3
1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
2Institut de Ciència de Materials de Barcelona–CSIC, Esfera UAB, 08193 Bellaterra, Spain
3I. Physics Institute, Justus Liebig University, Heinrich-Buff-Ring 16, 35592 Giessen, Germany
Appl. Phys. Lett.  96, 231906 (2010)
paper (PDF, 115,0 KB)

Spectral identification of impurities and native defects in ZnO
B.K. Meyer, D.M. Meyer, J. Stehr, A. Hoffmann
Wiley-VCH Buch über ZnO ed. C. Litton (2010)

Recombination dynamics in ZnO nanowires: Surfaces states versus mode quality factor
J. S. Reparaz1, F. Güell2, M. R. Wagner1, G. Callsen1, R. Kirste1, S. Claramunt2, J. R. Morante2,3, and A. Hoffmann1
1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
2Departament d’Electrònica, M-2E, IN2UB, Universitat de Barcelona, C/Martí i Franquès 1, 08028 Barcelona, Catalunya, Spain
3Institut de Recerca en Energia de Catalunya (IREC), C/Josep Pla 2, 08019 Barcelona, Catalunya, Spain
Appl. Phys. Lett. 97 (2010), 133116
paper (PDF, 644,3 KB)

Zinc Oxide- From fundamental properties towards novel application: Influence of external fields
Markus R. Wagner and Axel Hoffmann
Chapter 8: Springer series in materials sciences 120 (2010), p 201
ed. Claus Franz Klingshirn, Bruno K. Meyer, Andreas Waag, Axel Hoffmann, Jean Geurts

E-MRS 2009 Spring Meeting, Symposium J: Groupe III Nitride Semiconductors
Strassburg, France, Proceedings, Guest editors: Olivier Briot, Axel Hoffmann, Yasushi Nanishi, Fernando A. Ponce
phys. stat. sol (c) 7, (2010), Wiley-VCH

Strong electron-photon coupling in one-dimensional quantum dot chain:
Rabi waves and Rabi wavepackets
G. Ya. Slepyan,1 Y. D. Yerchak,1 A. Hoffmann,2 and F. G. Bass3
1Institute for Nuclear Problems, Belarus State University, Bobruiskaya 11, 220050 Minsk, Belarus
2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
3Department of Physics, Bar-Ilan University, 52900 Ramat-Gan, Israel
Phys. Rev. B 81, 085115 (2010)
paper (PDF, 1,9 MB)


Clebsch–Gordan coefficients for scattering tensors in ZnO and other wurtzite semiconductors
Herbert W. Kunert1, Markus R. Wagner2, Augusto G. J. Machatine1, Prime Niyongabo1,
Johan B. Malherbe2, Axel Hoffmann2, Jozef Barnas3, and Wojciech Florek3
1 Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
2 Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
3 Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznan,
Poland
Phys. Stat. Sol. B 247, No. 7, 1802–1806 (2010) / DOI 10.1002/pssb.200945583
paper (PDF, 126,7 KB)


Growth temperature - phase stability relation in In1-xGaxN epilayers
grown by high-pressure CVD
G. Durkaya1, M. Alevli1, M. Buegler1,2, R. Atalay1, S. Gamage1, M. Kaiser2, R. Kirste2, A. Hoffmann2, M. Jamil3, I. Ferguson3 and N. Dietz1
1 Department of Physics & Astronomy, Georgia State University, Atlanta, GA 30303
2 Technical University Berlin, Institute of Solid State Physics, Berlin, Germany
3 School of ECE, University of North Carolina at Charlotte, Charlotte, NC 28223
Mater. Res. Soc. Symp. Proc. Vol. 1202 © 2010 Materials Research Society
paper (PDF, 2,4 MB)

Theory of time-resolved Raman scattering and fluorescence emission
from semiconductor quantum dots
Julia Kabuß,1 Stefan Werner,2 Axel Hoffmann,2 Peter Hildebrandt,3 Andreas Knorr,1 and Marten Richter1
1Institut für Theoretische Physik, Nichtlineare Optik und Quantenelektronik, Technische Universität Berlin, Hardenbergstraße 36, EW 7-1,
D-10623 Berlin, Germany
2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, EW 5-1, D-10623 Berlin, Germany
3Max-Volmer-Laboratorium für Biophysikalische Chemie, Institut für Chemie, PC14, Technische Universität Berlin, Berlin, Germany
Phys. Rev. B 81, 075314 (2010)
paper (PDF, 751,4 KB)

Identification of a donor-related recombination channel in ZnO thin films
Matthias Brandt, Holger von Wenckstern, Gabriele Benndorf, Martin Lange, Christof P. Dietrich, Christian Kranert, Chris Sturm, Rüdiger SchmidtGrund, Holger Hochmuth, Michael Lorenz, and Marius Grundmann
Universität Leipzig, Institut für Experimentelle Physik II, Linnèstr. 5, 04103 Leipzig, Germany
Markus R. Wagner, Miran Alic, Christian Nenstiel, and Axel Hoffmann
Institute of Solid State Physics, TU Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
Phys. Rev. B 81, 073306 (2010)
paper (PDF, 188,5 KB)

Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals
C. Rauch,1 W. Gehlhoff,1 M. R. Wagner,1 E. Malguth,1 G. Callsen,1 R. Kirste,1
B. Salameh,1,2 A. Hoffmann,1 S. Polarz,3 Y. Aksu,4 and M. Driess4
1Institute of Solid State Physics, TU Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany
2Department of Applied Physics, Tafila Technical University, Tafila 66110, Jordan
3Department of Chemistry, University of Konstanz, D-78457 Konstanz, Germany
4Institute of Chemistry, Metalorganics and Inorganic Materials, TU Berlin, Straße des 17. Juni 135,
D-10623 Berlin, Germany
JOURNAL OF APPLIED PHYSICS 107, 024311 (2010)
paper (PDF, 627,5 KB)

Size-dependent recombination dynamics in ZnO nanowires
J. S. Reparaz,1 F. Güell,2 M. R. Wagner,1 A. Hoffmann,1 A. Cornet,3 and
J. R. Morante2,4
1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
2M-2E, IN2UB, Departament d’Electrònica, Universitat de Barcelona, C/Martí i Franquès 1,
Catalunya, 08028 Barcelona, Spain
3MIND, IN2UB, Departament d’Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, Catalunya,
08028 Barcelona, Spain
4Institut de la Recerca de l’Energia de Catalunya (IREC), C/Josep Pla 2, 08019 Barcelona,
Catalunya, Spain
Appl. Phys. Lett. 96, 053105 (2010)
paper (PDF, 286,7 KB)

Optical spectra of ZnO in the far ultraviolet: First-principles calculations and ellipsometric measurements
Paola Gori,1,2,6 Munise Rakel,3 Christoph Cobet,4 Wolfgang Richter,5 Norbert Esser,3,4 Axel Hoffmann,3 Rudolfo Del Sole,2,5,6 Antonio Cricenti,1,6 and Olivia Pulci,2,5,6
1 Consiglio Nazionale delle Ricerche, Istituto di Struttura della Materia, via Fosso del Cavaliere 100, 00133 Rome, Italy
2 European Theoretical Spectroscopy Facility (ETSF), Rome, Italy
3 Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany
4 Department Berlin, Institute for Analytical Sciences (ISAS), 12489 Berlin, Germany
5 CNR-INFM-SMC, Dipartimento di Fisica, Università di "Tor Vergata," via della Ricerca Scientifica 1, 00133 Rome, Italy
6 NAST, Rome, Italy
Phys. Rev. B 81, 125207 (2010)
paper (PDF, 199,0 KB)

Light-matter coupling in nanostructures without an inversion center
O.V. Kibis, G. Ya Slepyan, S. A. Maksimenko, A. Hoffmann
Superlattice and Microstructures 47 (2010), 216
Polariton effects in the dielectric function of ZnO excitons obtained
by ellipsometry
Munise Cobet,1 Christoph Cobet,2 Markus R. Wagner,1 Norbert Esser,2
Christian Thomsen,1 and Axel Hoffmann1
1Institute for Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany
2ISAS-Institute for Analytical Sciences, 12489 Berlin, Germany
Appl. Phys. Lett. 96, 031904 (2010)
paper (PDF, 169,9 KB)

Light-matter coupling in nanostructures without an inversion center
O.V. Kibis, G. Ya Slepyan, S. A. Maksimenko, A. Hoffmann
Superlattice and Microstructures 47 (2010), 216

Nach oben

2009

EPR identification of intrinsic and transition metal-related defects in ZnGeP2 and other II–IV–V2 compounds
W. Gehlhoff  A. Hoffmann
Institute for Solid State Physics, Technical University Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
Physica B 404 (2009) 4942–4948
paper (PDF, 229,9 KB)

T7 valence band symmetry related hole fine splitting of bound excitons in ZnO observed in magneto-optical studies
Markus R. Wagner, Jan-Hindrik Schulze, Ronny Kirste, Munise Cobet, and Axel Hoffmann
Institute of Solid State Physics, TU Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
Christian Rauch
Department of Applied Physics, Helsinki University of Technology, P.O. Box 1100, Helsinki FIN-02015 TKK, Finland
Anna V. Rodina
A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia
Bruno K. Meyer
I. Physics Institute, Justus Liebig University, Heinrich-Buff-Ring 16, 35592 Giessen, Germany
Uwe Röder and Klaus Thonke
Institut für Halbleiterphysik, Universität Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany
Phys. Rev. B 80, 205203 (2009)
paper (PDF, 368,1 KB)

Strong coupling of light with one-dimensional quantum dot chain: from
Rabi oscillations to Rabi waves
G. Ya. Slepyan,1 Y. D. Yerchak,1, S. A. Maksimenko,1 and A. Hoffmann2
1Institute for Nuclear Problems, Belarus State University, Bobruiskaya 11, 220050 Minsk, Belarus
2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
PACS numbers: 32.80.Bx, 42.65.Sf, 71.10.Li, 71.36.+c, 73.21.La, 78.67.Lt
paper (PDF, 1,0 MB)

Nitrogen incorporation in homoepitaxial ZnO CVD epilayers
Stefan Lautenschlaeger1, Sebastian Eisermann1, Bruno K. Meyer1, Gordon Callison2, Markus R. Wagner2, and Axel Hoffmann2
1I. Physics Institute, Justus Liebig University Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany
2Institute of Solid State Physics, TU Berlin, Hardenbergstraße 38, 10623 Berlin, Germany
Phys. Status Solidi RRL 3, No. 1, 16–18 (2009) / DOI 10.1002/pssr.200802215
paper (PDF, 290,2 KB)

Magnetic and structural properties
of transition metal doped zinc-oxide nanostructures
Amélia O. Ankiewicz 1, Wolfgang Gehlhoff2, Joana S. Martins1, Ângela S. Pereira3, Sérgio Pereira3,
Axel Hoffmann2, Evgeni M. Kaidashev4, Andreas Rahm4, Michael Lorenz4, Marius Grundmann4,
Maria C. Carmo1, Tito Trindade3, and Nikolai A. Sobolev1
1I3N and Departamento de Física, Universidade de Aveiro, Campus de Santiago, 3810-193 Aveiro, Portugal
2Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany
3CICECO, Universidade de Aveiro, Campus de Santiago, 3810-193 Aveiro, Portugal
4Institut für Experimentelle Physik II, Universität Leipzig, 04103 Leipzig, Germany
phys. stat. sol. B 246, No. 4, 766–770 (2009) / DOI 10.1002/pssb.200880581
paper (PDF, 388,7 KB)

Matter Coupling to Strong Electromagnetic Fields in Two-Level Quantum Systems
with Broken Inversion Symmetry
O.V. Kibis,1 G.Ya. Slepyan,2 S. A. Maksimenko,2 and A. Hoffmann3
1Department of Applied and Theoretical Physics, Novosibirsk State Technical University,
Karl Marx Avenue 20, 630092 Novosibirsk, Russia
2Institute for Nuclear Problems, Belarus State University, Bobruyskaya St. 11, 220050 Minsk, Belarus
3Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany
Phys. Rev. Lett. 102, 023601 (2009)
paper (PDF, 119,6 KB)

Wave propagation of Rabi oscillations in one-dimensional quantum dot chain
G.Ya. Slepyan a, Y.D. Yerchak a, S.A. Maksimenko a, A. Hoffmann b
a Institute for Nuclear Problems, Belarus State University, Bobruiskaya 11, 220050 Minsk, Belarus
b Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
Phys. Lett. A 373 (2009) 1374–1378
paper (PDF, 377,9 KB)

A Systematic Study on Zinc Oxide Materials Containing Group I Metals
(Li, Na, K)-Synthesis from Organometallic Precursors,
Characterization, and Properties

S. Polarz, A. Orlov, A. Hoffmann, M. R. Wagner, C. Rauch, R. Kirste,
W. Gehlhoff, Y. Aksu, M. Driess,§ M. W. E. van den Berg,^ and M. Lehmann#
Department for Chemistry, University of Konstanz, D-78457 Konstanz, Germany, Institute for Solid-State
Physics, Technical University Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany., §Institute of
Chemistry: Metalorganics and Inorganic Materials, Technical University Berlin, Sekr. C2, Straße des 17.
Juni 135, 10623 Berlin, Germany,
^Department for Chemistry, Ruhr-Universitaet Bochum, Universitaetsstrasse
150, 44780 Bochum, Germany, and
#Institute for Optics and Atomic Physics, Technical University
Berlin, Straße des 17. Juni 135, 10623 Berlin, Germany
Chem. Mater. 2009, 21, 3889–3897 3889
DOI:10.1021/cm9014223
paper (PDF, 2,9 MB)

Influence of substrate surface polarity on homoepitaxial
growth of ZnO layers by chemical vapor deposition
Markus R. Wagner, Til P. Bartel, Ronny Kirste, and Axel Hoffmann
Institute of Solid State Physics, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
Joachim Sann, Stefan Lautenschläger, and Bruno K. Meyer
I. Physics Institute, Justus Liebig University, Heinrich-Buff-Ring 16, 35592 Giessen, Germany
C. Kisielowski
National Center for Electron Microscopy, Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road,
Berkeley, California 94720, USA
Phys. Rev. B 79, 035307 (2009)
paper (PDF, 350,2 KB)

Bound and free excitons in ZnO. Optical selection rules in the absence
and presence of time reversal symmetry
M.R.Wagner a, H.W. Kunert b, A.G.J. Machatine b, A. Hoffmann a, P. Niyongabo b, J. Malherbe b, J. Barnas c
a Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
b Department of Physics, University of Pretoria, 0002, South Africa
c Department of Physics, Adam Mickiewicz University, ul. Ulmutowska 85, 61-614 Poznan, Poland
Microelectronics Journal 40 (2009) 289–292
paper (PDF, 229,6 KB)

Nach oben

2008

Optical characterization of InN layers grown by high-pressure chemical
vapor deposition

M. Alevli, R. Atalay, G. Durkaya, A. Weesekara, A. G. U. Perera, and N. Dietz
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303
R. Kirste and A. Hoffmann
Technische Universität Berlin, Germany
paper (PDF, 476,7 KB)

Structural and optical inhomogeneities of Fe doped GaN grown by hydride
vapor phase epitaxy

E. Malguth 1, A. Hoffmann 1, and M. R. Phillips 2
1 Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2 Microstructural Analysis Unit, University of Technology, Sydney, Broadway, New South Wales 2007,
Australia
Journal of Applied Physics 104, 123712 (2008)
paper (PDF, 509,2 KB)

GaN/AlN Quantum Dots for Single Qubit Emitters
M. Winkelnkemper∗,† R. Seguin, S. Rodt, A. Hoffmann, and D. Bimberg
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany
paper (PDF, 966,4 KB)

Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films

S. Lautenschlaeger, J. Sann, N. Volbers, and B. K. Meyer
Physics Institute, Justus-Liebig University Giessen, Heinrich Buff Ring 16, 35392 Giessen, Germany
A. Hoffmann, U. Haboeck, and M. R. Wagner
Institute of Solid State Physics, TU Berlin, Hardenbergstrasse 38, 10623 Berlin, Germany
Phys. Rev. B 77, 144108 (2008)
paper (PDF, 316,9 KB)

Mn charge states in GaMnN as a function of Mn concentration and co-doping

Enno Malguth1,2, Axel Hoffmann1, Wolfgang Gehlhoff1, Matthew H. Kane3, and Ian T.Ferguson3
1Institut für Festkörperphysik, Technische Universität Berlin, Berlin, 10623, Germany
2Microstructural Analysis Unit, University of Technology Sydney, Sydney, 2007, Australia
3School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA,
30332-0245
Mater. Res. Soc. Symp. Proc. Vol. 1040 © 2008 Materials Research Society
paper (PDF, 177,0 KB)

Mn- and Fe- doped GaN for spintronic applications
Enno Malguth1,2, Axel Hoffmann1, Stefan Werner1, Matthew H. Kane3, and Ian T. Ferguson3
1Institut für Festkörperphysik, Technische Universität Berlin, Berlin, 10623, Germany
2Microstructural Analysis Unit, University of Technology Sydney, Sydney, 2007, Australia
3School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA,
30332-0245
Mater. Res. Soc. Symp. Proc. Vol. 1040 © 2008 Materials Research Society
paper (PDF, 215,4 KB)

Phonon Interaction in InGaAs/GaAs Quantum Dots

Stefan Werner, Patrick Zimmer, André Strittmatter, and Axel Hoffmann
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, Berlin,
10623, Germany
Mater. Res. Soc. Symp. Proc. Vol. 1053 © 2008 Materials Research Society
paper (PDF, 232,8 KB)

Decay dynamics of neutral and charged excitonic complexes in single In/As Ga/As quantum dots

M. Feucker, R. Seguin, S. Rodt, A. Hoffmann, and D. Bimberg
Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany
Appl. Phys. Lett. 92, 063116 (2008)
paper (PDF, 307,3 KB)

Fe in III–V and II–VI semiconductors
Enno Malguth1, 2, Axel Hoffmann1, and Matthew R. Phillips2
1 Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2 Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, Australia
phys. stat. sol. (b), 1–26 (2008) / DOI 10.1002/pssb.200743315
paper (PDF, 2,1 MB)

Energy transfer in close-packed PbS nanocrystal films
V. Rinnerbauer, H.-J. Egelhaaf, and K. Hingerl
Christian Doppler Laboratory of Surface Optics, Institute of Semiconductor and Solid State Physics, University Linz,
Altenbergerstrasse 69, A-4040 Linz, Austria

P. Zimmer, S. Werner, T. Warming, and A. Hoffmann
Institute of Solid State Physics, Technical University Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany

M. Kovalenko, W. Heiss, G. Hesser, and F. Schaffler
Institute of Semiconductor and Solid State Physics, University Linz, Altenbergerstrasse 69, A-4040 Linz, Austria
Physical Review B 77, 085322 (2008)
paper (PDF, 936,5 KB)

Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides
M. Winkelnkemper, R. Seguin, S. Rodt, A. Schliwa, L. Reißmann, A. Strittmatter, A. Hoffmann, D. Bimberg
Physica E 40 (2008) 2217–2219
paper (PDF, 194,6 KB)

Optical and structural properties of homoepitaxial ZnO
T. P. Bartela, M. R. Wagner a, U. Haboecka, A. Hoffmanna
C. Neumannb, S. Lautenschlägerb, J. Sannb, B. K. Meyerb
aInstitut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36,
10623 Berlin, Germany;
bI. Physikalisches Institut, Justus Liebig Universität Giessen, Heinrich-Buff-Ring 16,
35392 Gießen, Germany
paper (PDF, 426,5 KB)

Nach oben

Zusatzinformationen / Extras

Direktzugang

Schnellnavigation zur Seite über Nummerneingabe