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TU Berlin

Inhalt des Dokuments

Publikationen 2004 - 2002

2004

On the composition dependence ZnO1-xSx
Bruno K. Meyer, A.Polyty, B. Farangis, Y. He, D. Hasselkamp, T. Krämer, C. Wang, U. Haboeck, and A. Hoffmann
phys. stat. sol. (c), 694 (2004)
paper (PDF, 211,6 KB)

Investigation of molecular co-doping for low ionization energy p-type centers in (Ga,Al)N
Z.C. Feng, A.M. Payne, D.N. Paul, D. Helm, I. Ferguson, J. Senawiratne, M. Strassburg, N. Dietz, Ch. Hums, A. Hoffmann
ed. H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean;
Mat. Res. Soc. Symp. Proc. 798, (2004) 545-550
paper (PDF, 202,7 KB)

Optical properties of Mn-doped GaN
O. Gelhausen, E. Malguth, M.R. Phillips, E.M. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, and M. Stutzmann
ed. H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean;
Mat. Res. Soc. Symp. Proc. 798, (2004) 569-574
paper (PDF, 578,9 KB)

Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN
O. Gelhausen, M.R. Phillips, E.M. Goldys, T. Paskova, B. Monemar, M. Strassburg, A. Hoffmann
ed. H.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean;
Mat. Res. Soc. Symp. Proc. 798, (2004) 497-502
paper (PDF, 520,4 KB)

Nitrogen doping in bulk and epitaxial ZnO
A. Zeuner, H. Alves, J. Sann, W. Kriegseis, C. Neumann, D.M. Hofmann, B.K. Meyer, A. Hoffmann, U. Haboeck, M. Straßburg, and A. Kaschner
phys. stat. sol. (c) 1, (2004) 731
paper (PDF, 268,1 KB)

Recombination dynamics in self-assembled InP/GaP quantum dots under high pressure
C. Kristukat, M. Dworzak, A.R. Goi, P. Zimmer, F. Hatami, S. Dreßler, A. Hoffmann<
High Pressure Conference, phys. stat. sol. (b) 241, (2004) 3263
paper (PDF, 2,6 MB)

The growth and optical properties of large, high-quality AlN single crystals
M. Strassburg, J. Senawiratne, N. Dietz, U. Haboeck, A. Hoffmann, V. Noveski, R. Dalmau, R. Schlesser, Z. Sitar
J. of Appl. Phys. 96, (2004) 5870
paper (PDF, 150,3 KB)

Recombination dynamics of localized excitons in InGaN quantum dots
T. Bartel, M. Dworzak, M. Strassburg, A. Hoffmann, A. Strittmatter, D. Bimberg<
Appl. Phys. Lett. 85, (2004) 1946
paper (PDF, 58,9 KB)

Rabi oscillations in a semiconductor quantum dot: Influence of local fields
G.Ya. Slepyan, A. Magyarov, S.A. Maksimenko, A. Hoffmann, D. Bimberg
Phys. Rev. B 70, (2004) 45320
paper (PDF, 91,3 KB)

Doping-level-dependent optical properties of GaN : Mn
O. Gelhausen, E. Malguth, M.R. Phillips, E.M. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic, M. Stutzmann
Appl. Phys. Lett. 84, (2004) 4514
paper (PDF, 70,6 KB)

Dissociation of H-related defect complexes in Mg-doped GaN
O. Gelhausen, M.R. Phillips, E.M. Goldys, T. Paskova, B. Monemar, M. Strassburg, A. Hoffmann
Phys. Rev. B. 69, (2004) 125210
paper (PDF, 537,6 KB)

Multi-excitonic complexes in single InGaN quantum dots
R. Seguin, S. Rodt, A. Strittmatter, L. Reissmann, T. Bartel, A. Hoffmann, D. Bimberg, E. Hahn, D. Gerthsen
Appl. Phys. Lett. 84, (2004) 4023
paper (PDF, 244,2 KB)

Identification of bound exciton complexes in ZnO
M. Strassburg, A. Rodina, M. Dworzak, U. Haboeck, I.L. Krestnikov, A. Hoffmann, O. Gelhausen, M.R. Phillips, H.R. Alves, A. Zeuner, D.M. Hofmann, B.K. Meyer
phys. stat. sol. (b) 241, (2004) 607
paper

Magneto-optical properties of bound excitons in ZnO
A.V. Rodina, M. Straßburg, M. Dworzak, U. Haboeck, A. Hoffmann, A. Zeuner, H.R. Alves, D.M. Hofmann, B.K. Meyer
Phys. Rev. B 69, (2004) 125206

Bound exciton and donor-acceptor pair recombination in ZnO
B.K. Meyer, H.R. Alves, D.M. Hofmann, W. Kriegeis, D. Foerster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, A.V. Rodina
phys. stat. sol. (b) 241, (2004) 231
paper (PDF, 602,2 KB)

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2003

Exciton-phonon coupling of localized quasi-2D excitons in semiconductor quantum well heterostructures
I.V. Bondarev, S.A. Maksimenko, G.Ya. Slepyan, I.L. Krestnikov, A. Hoffmann
Physics, Chemistry and  Application of Nanostructures, eds. V.E. Borisenko, S.V. Gaponenko, and V.S. Gurin, World Scientific Singapore , (2003) 302
paper (PDF, 3,3 MB)

Structure and energy level of native defects in as-grown and electron-irradiated zinc germanium diphosphide studied by EPR and photo-EPR
W. Gehlhoff, D. Azamat, A. Hoffmann, N. Dietz
J. of Physics and Chemistry of Solids 64, (2003) 1923
paper (PDF, 150,9 KB)

5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May 2003
A. Hoffmann
phys. stat. sol (b) 239, (2003) 273
paper (PDF, 681,9 KB)

5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May 2003
A. Hoffmann
phys. stat. sol (a) 199, (2003) 157
paper (PDF, 731,0 KB)

Optically detected magnetic resonance experiments on native defects in ZnGeP2
D.M. Hofmann, N.G. Romanov, W. Gehlhoff, D. Pfisterer, B.K. Meyer, D. Azamat, A. Hoffmann
Physica B 340-342, (2003) 978
paper (PDF, 218,6 KB)

EPR and electrical studies of native point defects in ZnSiP2 semiconductors
W. Gehlhoff, D. Azamat, A. Krtschil, A. Hoffmann, A. Krost
Physica B 340-342, (2003) 933
paper (PDF, 385,0 KB)

Exciton-phonon interactions and exciton pure dephasing in lens-shaped quantum dots
I.V. Bondarev, S.A. Maksimenko, G.Ya. Slepyan, I.L. Krestnikov, A. Hoffmann
Materials Science & Engineering C 23, (2003) 1107

Lateral carrier transfer in CdxZn1-xSe/ZnSySe1-y quantum dot layers
S. Rodt, V. Türck, R. Heitz, F. Guffarth, R. Engelhardt, U.W. Pohl, M. Strassburg, M. Dworzak, A. Hoffmann, D. Bimberg
Phys. Rev. B 67, (2003) 235327
paper (PDF, 764,2 KB)

Inherent nature of localized states in highly-planar monolayer InAs/GaAsN pseudo-alloys
I.L. Krestnikov, R. Heitz, N.N. Ledentsov, A. Hoffmann, A.M. Mintarov, T.H. Kosel, J.L. Merz, I.P. Shoshnikov, V.M. Ustinov
Appl. Phys. Lett. 83, (2003) 3728
paper (PDF, 209,6 KB)

Stress analysis of AlxGa1-xN films with microcracks
D. Rudloff, T. Riemann, J. Christen, Q.K.K. Liu, K. Vogeler, S. Einfeldt, D. Hommel, A. Kaschner, A. Hoffmann, C. Thomsen
Appl. Phys. Lett. 82, (2003) 367
paper (PDF, 148,3 KB)

Direct evidence for nanoscale carrier localization in InGaN/GaN structures grown on Si substrates
I.L.Krestnikov, M. Strassburg, A. Strittmatter, N.N. Ledentsov, A. Hoffmann, D. Bimberg, J. Christen
Jpn. J. Appl. Phys. 42, (2003) L 1057
paper (PDF, 153,9 KB)

Exciton-phonon interactions and exciton dephasing in semiconductor quantum well heterostructures
I.V. Bondarev, S.A. Maksimenko, G.Ya. Slepyan, I.L. Krestnikov, A. Hoffmann
Phys. Rev. B 68, (2003) 73310
paper (PDF, 411,2 KB)

EPR studies of native and impurity defects in II-IV-V2 semiconductors
W. Gehlhoff, D. Azamat, A. Hoffmann
Mat. Sci. Semicond. Processing 6, (2003) 379
paper (PDF, 6,9 MB)

Excitonic composites
G.A. Slepyan, S.A. Maksimenko, A. Hoffmann, D. Bimberg
Advances in Electromagnetics of Complex Media and Metamaterials, S. Zouhdi et al. (eds.), Netherlands, (2003) 385-402
paper (PDF, 828,4 KB)

The origin of the photoluminescence Stokes shift in ternary group-III nitrides : Field effects and localization
M. Straßburg, A. Hoffmann J. Holst, J. Christen, T. Riemann, F. Bertram, P. Fischer
phys. stat. sol. (c) 0, (2003) 1835
paper (PDF, 483,1 KB)

Lattice dynamics in GaN and AlN probed with first- and second-order Raman spectroscopy
U. Haboeck, H. Siegle, A. Hoffmann, C. Thomsen
phys. stat. sol. (c) 0, (2003) 1710
paper (PDF, 1,1 MB)

Local vibrational modes and compensation effects in Mg-doped GaN
A. Hoffmann, A. Kaschner, C. Thomsen
phys. stat. sol. (c) 0, (2003) 1783
paper (PDF, 808,0 KB)

Optical micro-characterization of group-III nitrides: Correlation of structural, electronic and optical properties
J. Christen, T. Riemann, F. Bertram, D. Rudloff, P. Fischer. A. Kaschner, U. Haboeck, A. Hoffmann, C. Thomsen
phys. stat. sol. (c) 0, (2003) 1795
paper (PDF, 1,3 MB)

Radiation hardness of InGaAs/GaAs quantum dots
F. Guffarth, R. Heitz, M. Geller, C. Kapteyn, H. Born, R. Sellin, A. Hoffmann, D. Bimberg, N.A. Sobolev, M.C. Carmo
Appl. Phys. Lett. 82, (2003) 1941
paper (PDF, 70,8 KB)

Carrier dynamics in particle-irradiated InGaAs/GaAs quantum dots
A. Cavaco, N.A. Sobolev, M.C. Carmo, F. Guffarth, H. Born, R. Heitz, A. Hoffmann, D. Bimberg
phys. stat. sol. (c) 0, (2003) 1177
paper (PDF, 834,8 KB)

Donor centers in Zinc Germanium Diphosphide produced by electron irradiation
W. Gehlhoff, D. Azamat, A. Hoffmann
phys. stat. sol. (b) 235, (2003) 151
paper (PDF, 132,4 KB)

Growth and p-type doping of ZnSeTe on InP
Matthias Strassburg, Martin Strassburg, O. Schulz, U.W. Pohl, A. Hoffmann, D. Bimberg, A.G. Kontos, Y.S. Raptis
J. Cryst. Growth 248, (2003) 50
paper (PDF, 347,6 KB)

Light emitters fabricated on bulk GaN substrates: Challenges and achievements
Piotr Perlin, M.  Leszczynki, P. Prystavko, R. Czernecki, G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, I. Grzegory, S. Porowski, V.Yu. Ivanov, M. Godlewski, J. Holst, A. Hoffmann
Mat. Res. Soc. Symp. Proc. Vol. 693, (2003) 303

Local field effects in quantum optics of quantum dots
G. Ya Slepyan, S.A. Maksimenko, A. Hoffmann, D. Bimberg
Proceedings of 26th Conf. Phys. Semicond., Edinburgh 2002, Institute of Phys., Conf. Ser. 171, ed. by A.R. Long and J.H. Davis , (2003) D 154

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2002

Properties of the nitrogen acceptor in ZnO
Martin Straßburg, U. Haboeck, A. Kaschner, Mathias Straßburg, A. Rodnina,
A. Hoffmann, C. Thomsen, A. Zeuner, H.R. Alves, D.M. Hofmann, B.K. Meyer
Proceedings of 26th Conf. Phys. Semicond., Edinburgh 2002
paper (PDF, 101,3 KB)

Evidence of quantum dots in "quantum well" InGaN/GaN structures
I.L. Krestnikov, A. Strittmatter, A.V. Sakharov, W.V. Lundin, A.F. Tsatsul'nikov,
Yu.G. Musikhin, D. Gerthsen, N.N. Ledentsov, A. Hoffmann, D. Bimberg
Proceedings of 26th Conf. Phys. Semicond., Edinburgh 2002

Optical properties of the nitrogen acceptor in epitaxial ZnO
A. Zeuner, H.R. Alves, D.M. Hofmann, B.K. Meyer, A. Hoffmann U. Haboeck,
M. Straßburg,M. Dworzak
phys. stat. sol. (b) 234 (2002), R 7

Correlation of surface potential, free carrier concentration and light emission in ELO GaN growth domains
U. Haboeck, A. Kaschner, A. Hoffmann, C. Thomsen, T. Riemann, A. Krtschil, J. Christen, A. Krost,M. Seyboth, F. Habel
pdf</button> phys. stat. sol. (b) 234 (2002), 911
paper (PDF, 743,9 KB)

Quantum optics of a quantum dot: local-field effects
G. Ya Slepyan, S.A. Maksimenko, A. Hoffmann, D. Bimberg
Phys. Rev. A 66 (2002), 063804
paper (PDF, 178,7 KB)

Time-resolved studies of InGaN/GaN quantum dots
I.L. Krestnikov, A.V. Sakharov, W.V. Lundin, A.S. Usikov, A.F. Tsatsul'nikov,
Yu.G. Musikhin, D. Gerthsen, N.N. Ledentsov, A. Hoffmann, and D. Bimberg
phys. stat. sol. (b) 192 (2002), 49
paper (PDF, 143,6 KB)

Quantum dot semiconductor lasers
N.N. Ledentsov, A. Hoffmann, I.L. Krestnikov, V.M. Ustinov, D. Bimberg, Zh. I. Alferov
Proc. Of Commemorative Int. Symp. For the 40th Anniversary of the Foundation of the Osaka
Electro-Communication University (2002), 567

Effect of annealing on the In and N distribution in InGaAsN quantum wells
M. Albrecht, V. Grillo, Th. Remmle, H.P. Strunk, A. Yu. Egorov, A. Kaschner, R. Heitz, A. Hoffmann
Appl. Phys. Lett. 81 (2002), 2719
paper (PDF, 195,6 KB)

ZnCdSe quantum structures- growth, optical properties, and applications
Martin Strassburg, O. Schulz, Mathias Strassburg, U.W. Pohl, R. Heitz, A. Hoffmann, D. Bimberg, M. Klude, D. Hommel, K. Lischka, D. Schikorra
Festkörperprobleme 42, Advances in Solid State Physics (2002), ed. by B. Kramer, 27
paper (PDF, 317,2 KB)

Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaN/sapphire substrates
T. Riemann, J. Christen, A. Kaschner, A. Laades, A. Hoffmann, C. Thomsen, M. Iwaya, S. Kamyama, H. Amano, I. Akasaki
Appl. Phys. Lett. 80 (2002), 3093
paper (PDF, 359,2 KB)
 
Effect of the (OH) surface capping on ZnO quantum dots
H. Zhou, H. Alves, D.M. Hofmann, B.K. Meyer, G. Kaczmarczyk, A. Hoffmann, C. Thomsen
phys. stat. sol. (b) 229 (2002), 825
paper (PDF, 78,5 KB)

Heteroepitaxy of ZnO on GaN templates
A. Zeuner, H. Alves, D.M. Hofmann; B.K. Meyer, A. Hoffmann, G. Kaczmarczyk, M. Heuken, A. Krost, J. Bläsing
phys. stat. sol. (b) 229 (2002), 907
paper (PDF, 94,8 KB)

Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn(OH)2core-shell structure
H. Zhou, H. Alves, D.M. Hofmann, W. Kriegeis, B.K. Meyer, G. Kaczmarczyk, A. Hoffmann
Appl. Phys. Lett. 80 (2002), 210
paper (PDF, 59,0 KB)
 
Nitrogen-related local vibrational modes in ZnO:N
A. Kaschner, U. Haboeck, Martin Straßburg, Matthias Straßburg, G. Kaczmarczyk, A. Hoffmann, C. Thomsen, A. Zeuner, H. R. Alves, D. M. Hofmann, and B. K. Meyer
Appl. Phys. Lett. 80 (2002), 1909
paper (PDF, 53,1 KB)

Local field effects in an isolated quantum dot: self-consistent microscopic approach
S.A. Maksimenko, G. Ya Slepyan, A. Hoffmann, D. Bimberg
phys. stat. sol. (a) 190 (2002), 555
paper (PDF, 71,5 KB)

Shape-dependent exciton dynamics in InGaAs/GaAs quantum dots
R. Heitz, H. Born, F. Guffarth, O. Stier, A. Schliwa, A. Hoffmann, D. Bimberg
phys. stat. sol. (a) 190 (2002), 499
paper (PDF, 91,0 KB)

Localization effects in InGaN multi-quantum well structures
A. Hoffmann, R. Heitz, A. Kaschner, T. Lüttgert, H. Born, A.Y. Egorov, H. Riechert
Materials Science and Engineering B 93 (2002), 55
paper (PDF, 142,4 KB)

Lateral redistribution of excitons in CdSe/ZnSe quantum dots
M. Straßburg*, M. Dworzak, H. Born, R. Heitz, A. Hoffmann,
M. Bartels, K. Lischka, D. Schikora, J. Christen
Appl. Phys. Lett. 80 (2002), 473
paper (PDF, 315,3 KB)
 
Tuned exciton kinetics in self-organized InGaAs/GaAs quantum dots
H. Born, R. Heitz, A. Hoffmann, D. Bimberg
J. Physica E 13, (2002), 233
paper (PDF, 338,3 KB)

Microscopic analysis of high quality thick ZnO CVD layers: imaging of growth domains, strain relaxation, and impurity incorporation
T. Riemann, J. Christen, G. Kaczmarczyk, A. Kaschner, A. Hoffmann, A. Zeuner, D. Hofmann, B.K. Meyer
phys. stat. sol. (b) 229 (2002), 891
paper (PDF, 474,1 KB)

Analysis of quantum dot formation and exciton localisation in the (Zn,Cd)(S,Se) system
M. Straßburg, J. Christen, M. Dwororzak, A. Hoffmann, M. Bartels, K. Lischka, D. Schikora
phys. stat. sol. (b) 229 (2002), 529
paper (PDF, 124,4 KB)

A quantitative analysis of two-colour pump and probe spectra from bound excitons in compensated II-VI semiconductors
I. Broser, A. Hoffmann, V. Kutzer
phys. stat. sol. (b) 229 (2002), 617
paper (PDF, 86,1 KB)

Quantum dot origin of luminescence in InGaN/GaN structures
I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, B. Bimberg, A.V. Sakharov, W.V. Lundin, A.F. Tsatsul’nikov, A.S. Usikov, Zh.I. Alferov, Yu. G. Musikhin, D. Gerthsen
Phys. Rev. B 66 (2002), 155310
paper (PDF, 231,6 KB)

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