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Inhalt des Dokuments

Publikationen 1998 - 1996

1998

Bound excitons in wide-gap II-VI and nitride semiconductors- comparison of optical studies of shallow dopants in these material
A. Hoffmann, V. Kutzer, A. Göldner
phys. stat. sol (b) 210 (1998), 327
paper (PDF, 257,9 KB)

Direct imaging of In-rich nanoclusters in InGaN correlating highly spatially resolved cathodoluminescence microscopy, transmission electron microscopy and micro-Raman spectroscopy
F. Bertram, J. Christen, A. Hoffmann, S. Selke, S. Einfeldt, D. Hommel
Journal of Electronic Materials 27 (1998), 35
paper (PDF, 122,9 KB)

Stimulated emission and optical gain of InGaN heterostructures grown by MOVPE production scale reactors
J. Holst, A. Hoffmann, M. Heuken, M. Schwamberra, O. Schön
Ohmsha Ltd. IOS Press Inc., 2 nd International Symposium on Blue
Laser and Light Emitting Diodes, eds. K. Onabe, 1998, p. 544
paper (PDF, 410,7 KB)

Optical properties of trions in ZnSe/ZnMgSe quantum wells
V. Kutzer, H. Born, A. Hoffmann, A. Schätz, H.-P. Wagner
Proceedings ICPS24, Jerusalem, August 2-7, (1998) (World Scientific, 1998).
paper (PDF, 125,8 KB)

Vertical coupling of quantum islands in CdSe/ZnSe submonolayer superlattices
I.L. Krestnikov, P.S. Kop'ev, Zh.I. Alferov, M. Straßburg, N.N. Ledentsov, A. Hoffmann, D.Bimberg, and C.M. Sotomayor Torres
Proceedings of the 6th International Symposium "Nanostructures: Physics and Technology", Ioffe Institute,
St. Petersburg, Russia, June 22-26, (1998), p. 187-190 (1998).
paper (PDF, 111,2 KB)

Lasing in structures with InAs submonolayer insertions in an AlGaAs matrix without external optical confinement
B.V. Volovik, A.Yu. Egorov, P.S. Kop'ev, A.R. Kovsh, I.E. Kozin, I.L. Krestnikov, M.V. Maximov, A.V. Sakharov, A.F. Tsatsul'nikov, V.M. Ustinov, A.E. Zhukov, Zh.I. Alferov, N.N. Ledentsov, M. Strassburg, A. Hoffmann, D. Bimberg, I.P. Soshnikov, P. Werner
Proceedings ICPS24, Jerusalem, August 2-7, (1998) (World Scientific, 1998).
paper (PDF, 1,3 MB)

Vertical arrangement and wavefunction control in structures with 2D quantum dots
I.L. Krestnikov, M. Strassburg, M. Caesar, V.A. Shchukin, A. Hoffmann, U.W. Pohl, D. Bimberg, N.N. Ledentsov, V.G. Malyshkin, P.S. Kop'ev, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen.
Proceedings ICPS24, Jerusalem, August 2-7, (1998) (World Scientific Publishing, 1998) E1.
paper (PDF, 1,0 MB)

Excitonic gain in CdSe/ZnSe quantum dot structures
M. Strassburg, I.L. Krestnikov, A. Göldner, V. Kutzer, A. Hoffmann, N.N. Ledentsov, Zh.I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen.
Proceedings ICPS24, Jerusalem, August 2-7, (1998) (World Scientific Publishing, 1998).
paper (PDF, 64,9 KB)

Optical properties and lasing in CdSe-submonolayers in a (Zn,Mg)(S,Se) matrix
I.L. Krestnikov, N.N. Ledentsov, A. Hoffmann, D. Bimberg, S.V. Ivanov, M.V. Maximov, A.V.
Sakharov, S.V. Sorokin, P.S. Kopev, Zh.I. Alferov, C.M. Sotomayor Torres
phys. stat. sol.(a) 168, 309-315 (1998).
paper (PDF, 195,2 KB)

Radiative and nonradiative relaxation mechanisms of group-III Nitrides
A. Goeldner, M. Strassburg, A. Hoffmann, B. Gil
Proceedings ICPS24, Jerusalem, August 2-7, 1998 (World Scientific Publishing, 1998).
paper (PDF, 54,6 KB)

Fine structure and Jahn-Teller effect of transition metals in GaN and AlN
P. Thurian and A. Hoffmann
XIV Int. Symposium on Electron-Phonon Dynamics and Jahn-Teller-Effect, Erice, Italy, July 7-13, 1998, eds.
G. Bevilacqua, L. Martinelli, N. Terzi, World Scientific Publishing (1998), 216-229
paper (PDF, 1,4 MB)

Excitons and phonons in GaN - magnetooptical and spatially resolved investigations
A. Hoffmann, L. Eckey, H. Siegle, A. Kaschner, J. Christen, F. Bertram, Q.K.K. Liu
Acta Physica Polonica A 94 (1998), 125
paper (PDF, 979,1 KB)

Properties of the intermediately bound α -, β- and γ-excitons in ZnO: Cu
P. Dahan; V. Fleurov, P. Thurian, R. Heitz, A. Hoffmann, and I. Broser
J. Phys.: Condens. Matr. 10 (1998), 2007
paper (PDF, 935,7 KB)

Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers
L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, A. Kaschner, H. Siegle, C Thomsen, B. Schineller, K. Heime, M. Heuken, O. Schön, R. Beccard
J. Appl. Phys. 84 (1998), 5828
paper (PDF, 79,4 KB)

Isotope shift in semiconductors with transition metal impurities. Experiments and theory applied to ZnO: Cu
P. Dahan, V. Fleurov, P. Thurian, R. Heitz, A. Hoffmann, I. Broser
Phys. Rev. B 57 (1998), 9690
paper (PDF, 132,5 KB)

Fine structure and Magnetooptics of excitonic levels in wurtzite GaN
L. Eckey, A. Hoffmann, P. Thurian, I. Broser, B.K. Meyer, K. Hiramatsu
Material Research Soc. Symp. Boston (1998), eds. F. A. Ponce, J. A. Edmund, B.K. Meyer Vol. 482, p. 637
paper (PDF, 671,8 KB)

Radiative and nonradiative relaxation of excitons in GaN
A. Göldner, L. Eckey, A. Hoffmann, I. Broser, A. Alemu, B. Gil, S. Ruffenach-Clur, R.L Aulombard, O. Briot
Material Research Soc. Symp. Boston (1998), eds. F. A. Ponce, J. A. Edmund, B.K. Meyer Vol. 482, p. 555
paper (PDF, 651,4 KB)

Mechanisms of optical gain in cubic GaN
J. Holst, L. Eckey, A. Hoffmann, I. Broser, B. Schöttker, D.J. As, D. Schikora, K. Lischka
Appl. Phys. Lett. 72 (1998), 1439
paper (PDF, 58,1 KB)

Gain studies of (Cd,Zn) Se quantum islands in a ZnSe matrix
M. Straßburg, V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I.L. Krestnikov, M.V. Maximov, P.S. Kop'ev, Zh.I. Alferov
Appl. Phys. Lett. 72 (1998), 942
paper (PDF, 131,2 KB)

The V3+-center in AlN
P. Thurian, I. Loa, P. Maxim, A. Hoffmann, C. Thomsen, K. Pressel
Appl. Phys. Lett. 71 (1998), 2993
paper (PDF, 79,4 KB)

Excited states and energy relaxation in stacked InAs/GaAs quantum dots
R. Heitz, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, A. Hoffmann, A. Madhukar, D. Bimberg
Phys. Rev. B 57 (1998), 9050
paper (PDF, 264,0 KB)

Excitonic quantum efficiency of GaN
A. Göldner, L. Eckey, B. Gil, and O. Briot
Mater. Sci. Forum 264-268 (1998), 1259
paper (PDF, 339,4 KB)

Excitonic fine structure and high density effects in GaN
A. Hoffmann, L. Eckey
Mater. Sci. Forum 264-268 (1998), 1283
paper (PDF, 601,4 KB)

Gain studies and lasing in excitonic waveguides of II-VI submonolayer structures
M. Straßburg, N.N. Ledentsov, A. Hoffmann, U. W. Pohl, D. Bimberg, I.L. Krestnikov,S.V. Ivanov, M.V. Maximov, S.V. Sorokin, P.S. Kop'ev, Zh.I. Alferov
J. Physica E 2, (1998), 542
paper (PDF, 101,2 KB)

Lasing and gain mechanisms in AlGaN-GaN-double heterostructures: correlation with structural properties
J. Holst, M. Straßburg, N.N. Ledentsov, L. Eckey, A. Göldner, A. Hoffmann, T. Hempel, D. Rudloff, F. Bertram, J. Christen, A.V. Sakharov, M.V. Maximov, A.S. Usikov, W.V. Lundin, B.V. Pushnyl, and Zh. I. Alferov
Mater. Sci. Forum 264-268 (1998), 1291
paper (PDF, 573,1 KB)

On the nature of the 3.42 eV luminescence in hexagonal GaN
S. Fischer, G. Steude, D.M. Hofmann, F. Kurth, F. Anders, M. Topf, B.K. Meyer, F. Bertram, M. Schmidt, J. Christen, L. Eckey, J. Holst, A. Hoffmann
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 396 special issue
of Journal of Crystal Growth189/190 (1998), 630
paper (PDF, 156,7 KB)

The influence of the Al-content on the optical gain in AlGaN
J. Holst, L. Eckey, A. Hoffmann, O. Ambacher, M. Stutzmann
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 56 special issue
of Journal of Crystal Growth 189/190 (1998), 692
paper (PDF, 109,2 KB)

Compensation effects in Mg -doped GaN epilayers
L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, B. Schineller, K. Heime, M. Heuken, O. Schön, R. Beccard
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 58 special issue
of Journal of Crystal Growth 189/190 (1998), 523
paper (PDF, 132,5 KB)

The  exciton-polariton effect on the fluorescence of GaN on sapphire
B. Gil, A. Hoffmann, S. Clur, L. Eckey, O. Briot, R.L. Aulombard
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 428 special issue
of Journal of Crystal Growth 189/190 (1998), 639
paper (PDF, 142,8 KB)

Nach oben

1997

Photoluminescence dynamics of Co doped ZnCdSe and ZnSSe crystals
H. Born, P. Thurian, T. Surkova, V. Kutzer, A. Hoffmann, W. Busse, H.-E. Gumlich, I. Broser, W.W. Giriat
J. Cryst. Growth 184/185 (1997), 1132
paper (PDF, 259,1 KB)

Local strain distribution of hexagonal GaN

A. Hoffmann, J. Christen, H. Siegle, F. Bertram, M. Schmidt, L. Eckey, A. Kaschner, C. Thomsen, K. Hiramatsu, S. Kitamura, N. Sawaki
Proc. ICNS'97,Tokushima, Japan, ed. K. Hiramatsu, (1997), 422 special issue of Journal of Crystal Growth
paper (PDF, 153,8 KB)

Gain to absorption conversion by increasing excitation densities in excitonic waveguides

V. Kutzer, M. Straßburg, A. Hoffmann, I. Broser, N.N. Ledentsov, U.W. Pohl, D. Bimberg, S.V. Ivanov, I.L. Krestnikov
J. Cryst. Growth 184/185 (1997), 632
paper (PDF, 223,2 KB)

Vertical strain and doping gradients in thick GaN layers

H. Siegle, A. Hoffmann, L. Eckey, C. Thomsen, J. Christen, F. Bertram, D. Schmidt, D. Rudloff, K. Hiramatsu
Appl. Phys. Lett. 71 (1997), 2490
paper (PDF, 95,4 KB)

Local vibrational modes at transition metal impurities in hexagonal AlN and GaN crystals

C. Göbel, C. Schrepel, U. Scherz, P. Thurian, G. Kaczmarczyk, and A. Hoffmann
Material Science Forum 258-263 (1997), 1173
paper (PDF, 526,5 KB)

Raman scattering from defects in GaN

H. Siegle, A. Kaschner, P. Thurian, A. Hoffmann, I. Broser, C. Thomsen,
Material Science Forum 258-263 (1997), 1197
paper (PDF, 462,8 KB)

Zeeman studies of the 0.9 eV emission in AlN and GaN

P. Thurian, I. Loa, P. Maxim, K. Pressel, A. Hoffmann, C. Thomsen
Material Science Forum 258-263 (1997), 1131
paper (PDF, 530,3 KB)

Hot carrier relaxation in InAs/GaAs quantum dots

R. Heitz, M. Veit, A. Kalburge, Q. Xie, M. Grundmann, P. Chen, N.N. Ledentsov, A. Hoffmann, A. Madhukar, D. Bimberg, V.M. Ustinov, P. S. Kop'ev, Zh. I. Alferov
J. Physica E 2, (1998), 578
paper (PDF, 115,8 KB)

Carrier capture and relaxation processes in InAs/GaAs quantum dots

R. Heitz, M. Veit, M. Grundmann, N.N. Ledentsov, A. Hoffmann, D. Bimberg, A. Kalburge, Q. Xie, P. Chen, A. Madhukar, V.M. Ustinov, P. S. Kop'ev, Zh. I. Alferov
Superlattices and Microstructures xx (1997), xxx
paper (PDF, 721,2 KB)

Photoluminescence of Co-doped ZnCdSe and ZnSSe alloys

T. P. Surkova, H. Born, P. Thurian, A. Hoffmann, W. Busse, H.-E. Gumlich, I. Broser, W. Giriat
Acta Physica Polonica A 92 (1997), 1013
paper (PDF, 235,5 KB)

Optical gain measurements of GaN and AlxGa1-xN heterostructures

L. Eckey, V. Kutzer, J. Holst, A. Hoffmann, I. Broser, O. Ambacher, M. Stutzmann, H. Amano, I. Akasaki
GaN and Related Materials, Material Research Soc. Symposium, San Francisco,
eds. C. Abernathy, H. Amano J. Zolper, Pittsburgh, Vol. 486 (1997), 237
paper (PDF, 809,9 KB)

Properties of the biexciton and the electron-hole plasma in highly excited GaN

J. Holst, L. Eckey, A. Hoffmann, I. Broser, H. Amano, I. Akasaki
2nd European GaN Workshop, Material Research Soc. Internet Journal of Nitride
Semiconductor Research, Walbronn (France) (1997), Vol. 2. Article 25
paper (PDF, 144,8 KB)

Spatially resolved investigations of the excitonic luminescence in GaN

A. Hoffmann, J. Christen, H. Siegle, F. Bertram, D. Schmidt, L. Eckey, C. Thomsen, K. Hiramatsu
Mat. Science & Engineering B 50 (1997), 192
paper (PDF, 377,1 KB)

Defect spectroscopy in the nitrides

B.K. Meyer, A. Hoffmann, P. Thurian
Physics and Applications of Group III Nitride Semiconductor Compounds, copyright
by Oxford University Press, ed. B. Gil, (1997), p. 242

Photoluminescence of Fe-complexes in GaN

P. Thurian, A. Hoffmann, P. Maxim, L. Eckey, R. Heitz, I. Broser, K. Pressel, B. K. Meyer, J. Schneider, J. Baur, M. Kunzer
Material Research Soc. Symp. Boston (1997), eds. F. A. Ponce, J. A. Edmund Vol. 449, p. 707
paper (PDF, 691,5 KB)

Depth-profile of the excitonic luminescence in gallium-nitride layers

H. Siegle, A. Hoffmann L. Eckey, C. Thomsen, T. Detchprohm, K. Hiramatsu, T. Davis, J. W. Steeds
Material Research Soc. Symp. Boston (1997), eds. F. A. Ponce, J. A. Edmund, Vol. 449, p. 677
paper (PDF, 515,3 KB)

Comment on: shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transition

H. Siegle, I. Loa, P. Thurian, L. Eckey, A. Hoffmann, I. Broser, and C. Thomsen
Appl. Phys. Lett. 70 (1997), 909
paper (PDF, 34,9 KB)

Isotope shift of local vibrational modes at transition-metal impurities in semiconductors

C. Schrepel, C. Göbel, U. Scherz, P. Thurian, G. Kaczmarczyk, A. Hoffmann
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems
(Jahn-Teller Effect), Berlin, Germany (1996), ed. H.-J. Schulz, special
issue of Zeitschrift für Physikalische Chemie, Bd. 201 (1997), 295
paper (PDF, 572,2 KB)

Defect modes and disorder-induced Raman scattering in GaN

H. Siegle, I. Loa, P. Thurian, G. Kaczmarczyk, L. Filippides, A. Hoffmann, C. Thomsen, D. Schikora, D. Hankeln, K. Lischka
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems
(Jahn-Teller Effect), Berlin, Germany (1996), ed. H.-J. Schulz, special
issue of Zeitschrift für Physikalische Chemie, Bd. 201 (1997), 187
paper (PDF, 393,3 KB)

Jahn-Teller effect of Cu2+ in II-VI compounds

P. Thurian, R. Heitz, G. Kaczmarczyk, A. Hoffmann, I. Broser
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems
(Jahn-Teller Effect), Berlin, Germany (1996), ed. H.-J. Schulz, special
issue of Zeitschrift für Physikalische Chemie, Bd. 201 (1997), 411
paper (PDF, 805,5 KB)

Jahn-Teller Effect: Isotope splitting and nonradiative recombination

A. Hoffmann and R. Heitz
XIII Int. Symposium on Electrons and Vibrations in Solids and Finite Systems
(Jahn-Teller Effect), Berlin, Germany (1996), ed. H.-J. Schulz, special
issue of Zeitschrift für Physikalische Chemie, Bd 201 (1997), 277
paper (PDF, 1,1 MB)

Photoluminescence and optical gain in highly excited GaN

L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu
J. Lumin. 72-74 (1997), 59
paper (PDF, 213,9 KB)

Energy  relaxation by multiphonon processes recombination in InAs/GaAs quantum dots

R. Heitz, M. Veit, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, P.S. Kop'ev, Zh. I. Alferov
Phys. Rev. B 56 (1997), 10435
paper (PDF, 1,3 MB)

Time-resolved Raman scattering in gallium nitride

H. Siegle, V. Kutzer. B. Lummer, A. Hoffmann, C. Thomsen
23rd Int. Conf. on the Phys. of Semicond. copyright by World Scientific
Publishing eds. M. Scheffler, R. Zimmermann, (1996), p. 533
paper (PDF, 428,3 KB)

Zone-boundary phonons in hexagonal and cubic GaN

H. Siegle, G. Kaczmarczyk, L. Philippidis, A.P. Litvinchuk, A. Hoffmann, C. Thomsen
Phys. Rev. B 55 (1997), 7000
paper (PDF, 117,2 KB)
Excited states of Fe3+ in GaN
R. Heitz, P. Maxim, L. Eckey, P. Thurian, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer
Phys. Rev. B 55 (1997), 4382
paper (PDF, 121,9 KB)

Intensity-dependent hot-phonon relaxation in ZnSe

V. Kutzer, H. Siegle, C. Thomsen, A. Hoffmann, I. Broser
Mat. Science & Engineering B 43 (1997), 46
paper (PDF, 230,4 KB)

Nach oben

1996

1996

Gain spectroscopy of HVPE-grown GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, T. Detchprohm, K. Hiramatsu
1st European GaN Workshop, Material Research Soc. Internet Journal of Nitride
Semiconductor Research, Rigi (Switzerland) (1996), 125
paper (PDF, 113,5 KB)

Raman frequency and angular dispersion of polar modes in aluminum nitride and gallium nitride
I. Filippides, H. Siegle, A. Hoffmann, C. Thomsen, K. Karch, and F. Bechstedt
phys. stat. sol. (b) 198 (1996), 621
paper (PDF, 547,0 KB)

Optical properties of highly excited GaN
L. Eckey, J. Holst, A. Hoffmann, I. Broser, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu
23 rd Int. Conf. on the Phys. of Semicond., Berlin, Germany, copyright by
World Scientific Publishing, eds. M. Scheffler, R. Zimmermann, (1996), p. 2861
paper (PDF, 340,5 KB)

Magneto-optical properties of the I1d bound exciton emission center in ZnSe
U. Pohl, A. Göldner, R. Heitz, A. Hoffmann
23rd Int. Conf. on the Phys. of Semicond., Berlin, Germany, copyright by
World Scientific Publishing, eds. M. Scheffler, R. Zimmermann, (1996), p. 369
paper (PDF, 421,7 KB)

Fe related defects in GaN epilayers
P. Thurian, R. Heitz, L. Eckey, P. Maxim, V. Kutzer, A. Hoffmann, I. Broser, K. Pressel, B.K. Meyer
23rd Int. Conf. on the Phys. of Semicond., Berlin, Germany, copyright by
World Scientific Publishing, eds. M. Scheffler, R. Zimmermann, (1996), p. 2897
paper (PDF, 430,4 KB)

Acoustic and optical zone-boundary phonons in gallium nitride
H. Siegle, L. Philippides, G. Kaczmarczyk, A. P. Litvinchuk, A. Hoffmann, C. Thomsen
23rd Int. Conf. on the Phys. of Semicond., Berlin, Germany, copyright by
World Scientific Publishing, eds. M. Scheffler, R. Zimmermann, (1996), p. 537
paper (PDF, 320,0 KB)

Dynamics of excited states in GaN
A. Hoffmann
Mat. Science & Engineering B 43 (1996), 185
paper (PDF, 952,7 KB)

Optical properties of GaN
A. Hoffmann
Festkörperprobleme 36, Advances in Solid State Physics (1996), ed. R. Helbig,p. 33

Micro-Raman-scattering experiments of GaN layers deposited on sapphire and SiC substrates
H. Siegle, P. Thurian, L. Eckey, G. Kaczmarczyk, L. Pilipides, A. Hoffmann, I. Broser, C. Thomsen, T. Detchprohm, K. Hiramatsu
Ohmsha Ltd. IOS Press Inc., International Symposium on Blue Laser and Light
Emitting Diodes, eds. A. Yoshikawa, K. Kishino, T. Yasuda (1996), p. 488
paper (PDF, 509,5 KB)

Defects in cubic and hexagonal GaN epilayers
P. Thurian, L. Eckey, J.-C. Holst, R. Heitz, A. Hoffmann, C. Thomsen, I. Broser, K. Pressel, I. Akasaki, H. Amano, D. Schikora, M. Hankeln, K. Lischka
Ohmsha Ltd. IOS Press Inc., International Symposium on Blue Laser and Light Emitting
Diodes, eds. A. Yoshikawa, K. Kishino, T. Yasuda (1996), p. 180
paper (PDF, 584,1 KB)

Spatially-resolved photoluminescence and Raman scattering experiments on GaN/substrate interface
H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, B.K. Meyer ,H. Amano,I. Akasaki
Appl. Phys. Lett. 68 (1996), 1265
paper (PDF, 1,6 MB)

Excitonic fine structure of GaN epilayers
D. Volm, B. K. Meyer, L. Eckey, A. Hoffmann ,T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki,
Phys. Rev. B 53, (1996), 16543
paper (PDF, 166,5 KB)

Raman and photoluminescence imaging of the GaN/substrate interface
H. Siegle, P. Thurian, L. Eckey, A. Hoffmann, C. Thomsen, B.K. Meyer, T. Detchprohm, K. Hiramatsu, H. Amano, I. Akasaki,
Inst. Phys. 149 (1996), 97
paper (PDF, 587,4 KB)

Dynamical study of the yellow luminescence band in GaN
A. Hoffmann, L. Eckey, P. Maxim, J.-Chr. Holst, R. Heitz, D. M. Hofmann, D. Kovalev, G. Steude, D. Volm, B.K. Meyer, T. Detchprohm, H. Amano, I. Akasaki
Proc. Topical Workshop on III-V Nitrides, TWN'95, Nagoya, (1995) Solid State Electronics 41 (1997), 275
paper (PDF, 233,0 KB)

Excitonic structure in GaN epilayers grown by hydride vapor phase epitaxy
L. Eckey, L. Podlowski, A. Göldner, A. Hoffmann, I. Broser, B.K. Meyer, D. Volm, T. Strehl, K. Hiramatsu , T. Detchprohm, H. Amano, I. Akasaki
IOP Publishing Ltd., Inst. Phys. Conf. Ser. No. 142: Chap. 5 (1996), p. 943
paper (PDF, 198,3 KB)

Relaxation and recombination dynamics of excitons in GaN/Al 2 O3 epilayers
L. Eckey, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, K. Hiramatsu, T. Detchprohm, H. Amano, I. Akasaki,
IOP Publishing Ltd., Inst. Phys. Conf. Ser. No. 142: Chap. 5 (1996), p. 927
paper (PDF, 285,5 KB)

Pulse propagation-induced higher orders of diffraction in degenerate four-wave mixing
B. Lummer, J.-M. Wagner, R. Heitz, A. Hoffmann, I. Broser, R. Zimmermann
Phys. Rev. B 54. (1996), 16727
paper (PDF, 125,1 KB)

Photoluminescence study of the 1.047 eV Emission in GaN
K. Pressel, S. Nilsson, R. Heitz, A. Hoffmann, B.K. Meyer
J. Appl. Phys. 79 (1996), 3214
paper (PDF, 104,1 KB)

Nonlinear Zeeman behavior of Cu2+centers in ZnS and CdS explained by a Jahn-Teller effect
T. Telahun, U. Scherz, P. Thurian, R. Heitz, A. Hoffmann, I. Broser
Phys. Rev. B 53 (1996), 1274
paper (PDF, 260,2 KB)

Dynamics of bound exciton luminescence from epitaxial GaN
L. Eckey, J.-Ch. Holst, P. Maxim, R. Heitz, A. Hoffmann, I. Broser, B.K. Meyer, C. Wetzel, E. N. Mokhov, P. G. Baranov
Appl. Phys. Lett. 68 (1996), 415
paper (PDF, 74,5 KB)
 
Influence of compensation on the luminescence of nitrogen-doped ZnSe-epilayers grown by MOVPE
R. Heitz, E. Moll, V. Kutzer, D. Wiesmann, B. Lummer, A. Hoffmann, I. Broser, P. Bäume, W. Taudt, J. Söllner, M. Heuken
J. Cryst. Growth 159 (1996), 307
paper (PDF, 288,2 KB)

Strain-dependent Zeeman effect of the nitrogen acceptor bound exciton in ZnSe-epilayers
A. Hoffmann, D. Wiesmann, I. Loa, R. Heitz, W. Pohl, I. Broser, L. Worschech, E. Kurtz, D. Hommel, G. Landwehr, D. Hofmann, B.K. Meyer
J. Cryst. Growth 159 (1996), 302
paper (PDF, 277,3 KB)

Acceptor bound biexcitons in ZnSe and CdS
V. Kutzer, B. Lummer, R. Heitz, A. Hoffmann, I. Broser, E. Kurtz, D. Hommel
J. Cryst. Growth 159 (1996),776
paper (PDF, 275,2 KB)

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