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TU Berlin

Inhalt des Dokuments

Aktuelle Publikationen

2013

Li-doped ZnO nanorods with single-crystal quality–non-classical crystallization and self-assembly into mesoporous materials
C Lizandara-Pueyo, S Dilger, MR Wagner, M Gerigk, A Hoffmann, S Polarz
CrystEngComm

Multiphoton resonant excitations and high-harmonic generation in bilayer graphene
HK Avetissian, GF Mkrtchian, KG Batrakov, SA Maksimenko, A Hoffmann
Physical Review B 88 (16), 165411

Carrier dynamics in InAs/GaAs submonolayer stacks coupled to Stranski-Krastanov quantum dots

Thomas Switaiski, Ulrike Woggon, Dorian E Alden Angeles, Axel Hoffmann, Jan-Hindrik Schulze, Tim David Germann, André Strittmatter, Udo W Pohl
Physical Review B 88 (3), 035314

Nitrogen and vacancy clusters in ZnO
Filip Tuomisto, Christian Rauch, Markus R Wagner, Axel Hoffmann, Sebastian Eisermann, Bruno K Meyer, Lukasz Kilanski, Marianne C Tarun, Matthew D McCluskey
Journal of Materials Research 28 (2013), 1977

Identification of electric dipole moments of excitonic complexes in nitride-based quantum dots

Gerald Hönig, Sven Rodt, Gordon Callsen, Irina A Ostapenko, Thomas Kure, Andrei Schliwa, Christian Kindel, Dieter Bimberg, Axel Hoffmann, Satoshi Kako, Yasuhiko Arakawa
Physical Review B 88 (4), 045309

Lasing properties of non-polar GaN quantum dots in cubic aluminum nitride microdisk cavities
M Burger, G Callsen, T Kure, A Hoffmann, A Pawlis, D Reuter, DJ As
Applied Physics Letters 103 (2), 021107-021107-4

Nanoscale imaging of InN segregation and polymorphism in single vertically aligned InGaN/GaN multi quantum well nanorods by tip-enhanced Raman scattering
Emanuele Poliani, Markus Raphael Wagner, Juan Sebastián Reparaz, Martin Mandl, Martin Strassburg, Xiang Kong, Achim Trampert, CM Sotomayor Torres, Axel Hoffmann, Janina Maultzsch
Nano letters 13 (7), 3205-3212

Steering photon statistics in single quantum dots: From one-to two-photon emission
G Callsen, A Carmele, G Hönig, C Kindel, J Brunnmeier, MR Wagner, E Stock, JS Reparaz, A Schliwa, S Reitzenstein, A Knorr, A Hoffmann, S Kako, Y Arakawa
Physical Review B 87 (24), 245314

Spatial mapping of exciton lifetimes in single ZnO nanowires
J. S. Reparaz, G. Callsen, M. R. Wagner, F. Güell, J. R. Morante, C. M. Sotomayor Torres, and A. Hoffmann
APL MATERIALS 1, 012103 (2013)
paper (PDF, 459,8 KB)

Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method
D. Gogova, P. P. Petrov, M. Buegler, M. R. Wagner, C. Nenstiel, G. Callsen, M. Schmidbauer, R. Kucharski, M. Zajac, R. Dwilinski, M. R. Phillips, A. Hoffmann,
and R. Fornari
JOURNAL OF APPLIED PHYSICS 113, 203513 (2013)
paper (PDF, 884,0 KB)

Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering
J S Reparaz, N Peica, R Kirste, A R Goñi, M R Wagner, G Callsen, M I Alonso, M Garriga, I C Marcus, A Ronda, I Berbezier, J Maultzsch, C Thomsen and A Hoffmann
Nanotechnology 24 (2013) 185704 (6pp)

Tip-enhanced Raman scattering of an InGaN/GaN quantum well on a single GaN nanorod
Emanuele Poliani1, Markus Wagner1, Axel Hoffmann1, Janina Maultzsch1, Juan Sebastian Reparaz2, Martin Mandl3, Werner Bergbauer3, Martin Strassburg3
1Technische Universität Berlin, 10623 Berlin, Germany
2Catalan Institute of Nanotechnology, 08193 Bellaterra, Spain
3Osram Opto Semiconductors GmbH, 93055 Regensburg, Germany
Bulletin of the American Physical Society 58 2013 APS

Signature of the two-dimensional phonon dispersion in graphene probed by double-resonant Raman scattering
Patrick May1,*, Michele Lazzeri2, Pedro Venezuela3, Felix Herziger1, Gordon Callsen1, Juan S. Reparaz1,†, Axel Hoffmann1, Francesco Mauri2, and Janina Maultzsch1
1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, D-10623 Berlin, Germany
2IMPMC, Université Pierre et Marie Curie, CNRS, 4 place Jussieu, F-75252 Paris, France
3Instituto de Física da Universidade Federal Fluminense, Campus da Praia Vermelha, Niterói, RJ, Brazil
Phys. Rev. B 87, 075402 (2013) [6 pages]DOI: 10.1103/PhysRevB.87.075402
paper (PDF, 483,7 KB) (PDF, 693,6 KB)

Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire
R Kirste, MR Wagner, C Nenstiel, F Brunner, M Weyers, A Hoffmann
physica status solidi (a) 210, 285

Array of tunneling-coupled quantum dots as a terahertz range quantum nanoantenna
Y Yerchak, GY Slepyan, SA Maksimenko, A Hoffmann, F Bass
Journal of Nanophotonics 7 (1), 073085-073085

Intrinsic bandgap of cleaved ZnO(110) surfaces
A. Sabitova1, Ph. Ebert1, A. Lenz2, S. Schaafhausen1, L. Ivanova2, M. Dähne2, A. Hoffmann2, R. E. Dunin-Borkowski1, A. Förster3, B. Grandidier4, and H. Eisele2
1Peter Grünberg Institut, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
3Institut für Nano- und Biotechnologien (INB), FH Aachen, Heinrich-Mußmann-Str. 1, 52428 Jülich, Germany
4Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN (CNRS, UMR 8520), Département ISEN, 41 bd Vauban, 59046 Lille Cedex, France
Appl. Phys. Lett. 102, 021608 (2013); http://dx.doi.org/10.1063/1.4776674
paper (PDF, 1,0 MB)

2012

Acceptors in ZnO nanocrystals: A reinterpretation
W. Gehlhoff, A. Hoffmann
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
Appl. Phys. Lett. 101, 262106 (2012); doi:10.1063/1.4773524
paper (PDF, 483,7 KB)

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN
Zachary Bryan1,4, Marc Hoffmann1, James Tweedie1, Ronny Kirste1, Gordon Callsen3, Isaac Bryan1, Anthony Rice1, Milena Bobea1, Seiji Mita1, Jinqiao Xie2, Zlatko Sitar1, Ramón Collazo1
1Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
2HexaTech, Inc., 991 Aviation Pkwy., Suite 800, Morrisville, NC, 27560, USA
3Institut für Festkörperphysik, TU-Berlin, Hardenbergstraße 36, 10623, Berlin, Germany
Journal of Electronic Materials 1-5, 1543-186X (2012), DOI:10.1007/s11664-012-2342-9
paper (PDF, 392,8 KB)

Collective spontaneous emission in coupled quantum dots: Physical mechanism of quantum nanoantenna
Salman Mokhlespour* and J. E. M. Haverkort
Eindhoven University of Technology, Physics Department, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Gregory Slepyan and Sergey Maksimenko
Institute for Nuclear Problems, Belarus State University, 11 Bobruiskaya Str., 220050 Minsk, Belarus
A. Hoffmann
Institut für Festkörperphysik, Technische Universität Berlin Hardenbergstr. 36, D-10623 Berlin, Germany
Phys. Rev. B 86, 245322 (2012)
paper (PDF, 4,1 MB)

Effect of TMGa preflow on the properties of high temperature AlN layers grown on sapphire
Ronny Kirste1,*, Markus R. Wagner1, Christian Nenstiel1, Frank Brunner2, Markus Weyers2, Axel Hoffmann1
1 TU Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin, Germany
2 Ferdinand Braun Institut, Gustav-Kirchhoff Str. 4, 12489 Berlin, Germany
phys. stat. sol. (a) 1–6 (2012), DOI 10.1002/pssa.201228506
paper (PDF, 488,5 KB)

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD
Ramazan Atalay, Max Buegler, Sampath Gamage, M. K. I. Senevirathna, A. G. Unil Perera, Nikolaus Dietz
Georgia State Univ. (United States)
Bahadir Küçükgök, Andrew G. Melton, Ian T. Ferguson
The Univ. of North Carolina at Charlotte (United States)
Axel Hoffmann
Technische Univ. Berlin (Germany)
Proc. SPIE 8484, (December 11, 2012), doi:10.1117/12.930199
paper (PDF, 550,2 KB)

Optical signature of Mg-doped GaN: Transfer processes
G. Callsen*, M. R. Wagner, T. Kure, J. S. Reparaz, M. Bügler, J. Brunnmeier, C. Nenstiel, and A. Hoffmann
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
M. Hoffmann, J. Tweedie, Z. Bryan, S. Aygun, R. Kirste, R. Collazo, and Z. Sitar
Material Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States
Phys. Rev. B 86, 075207 (2012)
paper (PDF, 1,4 MB)

Phonon plasmon interaction in ternary group-III-nitrides

Ronny Kirste, Stefan Mohn, Markus R. Wagner, Juan S. Reparaz, and Axel Hoffmann
TU Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin, Germany
Appl. Phys. Lett. 101, 041909 (2012)
paper (PDF, 1,0 MB)

Mixed states in Rabi waves and quantum nanoantennas
G. Ya. Slepyan1, Y. D. Yerchak1,*, S. A. Maksimenko1, A. Hoffmann2, and F. G. Bass3
1Institute for Nuclear Problems, Belarus State University, Bobruiskaya 11, 220050 Minsk, Belarus
2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany
3Department of Physics, Bar-Ilan University, IL-52900 Ramat-Gan, Israel
Phys. Rev. B 85, 245134 (2012)
paper (PDF, 354,8 KB)

Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications
Maurizio Roczen, Martin Schade, Enno Malguth, Gordon Callsen, Thomas Barthel, Orman Gref, Jan A. Töpinger, Andreas Schöpke, Manfred Schmidt, Hartmut S. Leipner, Florian Ruske, Matthew R. Phillips, Axel Hoffmann, Lars Korte, Bernd Rech
Appl. Phys. A (2012), DOI10.1007/s00339-012-6956-9
paper (PDF, 832,9 KB)

The effect of reactor pressure on the electric and structural properties of InN epilayers grown by HPCVD
M. K. I. Senevirathnaa, S. Gamage, R. Atalay, A. R. Acharya, A. G. U. Perera, N. Dietz, M. Buegler, A. Hoffmann, L. Su, A. Melton, I. Ferguson
J. Vac. Sci. Technol. A 3 (2012), 31511
paper (PDF, 1,0 MB)

Electronic properties of asymmetrical quantum dots dressed by laser fields
O.V. Kibis, G. Ya. Slepyan, S. A. Maksimenko, A. Hoffmann 
phys. stat. sol. (b) 249 (2012), 914
paper (PDF, 124,3 KB)

Optical signatures of nitrogen acceptors in ZnO
S. Lautenschlaeger, S. Eisermann, G. Haas, E. A. Zolnowski, M. N. Hofmann, A. Laufer, M. Pinnisch, and B. K. Meyer
I. Physikalisches Institut, Justus-Liebig-University Gießen, Heinrich Buff-Ring-16, 35392 Gießen, Germany
M. R. Wagner, J. S. Reparaz, G. Callsen, and A. Hoffmann
Institute of Solid State Physics, Technical University Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
A. Chernikov, S. Chatterjee, V. Bornwasser, and M. Koch
Faculty of Physics and Materials Sciences Center, Philipps University Marburg, Renthof 5, 35032 Marburg, Germany
Phys. Rev. B 85 (2012), 235204
paper (PDF, 1,1 MB)

Band-Gap Engineering of Zinc Oxide Colloids via Lattice Substitution
with Sulfur Leading to Materials with Advanced Properties for Optical Applications Like Full Inorganic UV Protection

Daniela Lehr, Martin Luka, Markus R. Wagner, Max Bügler, Axel Hoffmann, and SebastianPolarz*
Department of Chemistry, University of Konstanz, D-78457 Konstanz, Germany.
Institute of Solid State Physics, Technical University of Berlin, Hardenbergstrasse 36, D-10623 Berlin, Germany
Chem. Mater. 2012, 24, 1771−1778
paper (PDF, 4,2 MB)

High Si and Ge n-type doping- Limits and impact on stress
S. Fritze, A. Dadgar, H. Witte, M. Bügler, A. Rohrbeck, J. Bläsing, A. Hoffmann, A. Krost
Appl. Phys. Lett. 100, 122104 (2012)
paper (PDF, 1,0 MB)

Lateral positioning of InGaAs quantum dots using a buried stressor
Andre. Strittmatter, Andrei Schliwa, Jan-Hindrik Schulze, Tim Germann, Alexander Dreismann, Ole Hitzemann, Erik Stock, Irina Ostapeko, Sven Rodt, Waldemar Unrau, Udo, Pohl, Axel Hoffmann, Dieter Bimberg, Vladimir Haisler
Appl. Phys. Lett. 100, 093111 (2012)
paper (PDF, 654,1 KB)

Site-controlled quantum dot growth on buried oxide stressor layers
André Strittmatter, André Holzbecher, Andrei Schliwa, Jan-Hindrik Schulze, David Quandt, Tim David Germann, Alexander Dreismann, Ole Hitzemann, Erik Stock, Irina A Ostapenko, Sven Rodt, Waldemar Unrau, Udo W Pohl, Axel Hoffmann, Dieter Bimberg, Vladimir Haisler
physica status solidi (a) 209, 2411

Exciton acoustic-phonon coupling in single GaN/AlN quantum dots
Irina A. Ostapenko, Gerald Hönig, Sven Rodt, Andrei Schliwa, Axel Hoffmann, Dieter Bimberg, Matthias-Rene Dachner, Marten Richter, Andreas Knorr, Satoshi Kako, Yusuhiko Arakawa
Phys. Rew. B 85, 081303 (R) (2012)
paper (PDF, 458,8 KB)

Preface: Phys. Status Solidi C 5/2012
Axel Hoffmann, Jürgen Christen
Phys. Status Solidi C 9, 1223 (2012), doi: 10.1002/pssc.201260139
paper (PDF, 348,7 KB)

Preface: Group III nitrides and their heterostructures for electronics and photonics
Bernard Gil, Axel Hoffmann
Phys. Status Solidi C 9, No. 3–4, 1005–1006 (2012) / DOI 10.1002/pssc.201260136
paper (PDF, 90,7 KB)

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2011

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
Ronny Kirste, Ramon Collazo, Gordon Callsen, Markus M. Wagner, Thomas Kure, Juan Sebastian Reparaz, Seji Mita, Jinqiao XieAnthony, Rice, James Tweedie, Zlatko Sitar, Axel Hoffmann,
J. Appl. Phys. 110  (2011), 09503
paper (PDF, 2,8 MB)

Excitation of terahertz nanoantennas by Rabi waves
G. Ya. Slepyan, Y. D. Yerchak, S.A. Maksimenko, A. Hoffmann, and F. G. Bass
AIP Conf. Proc. 1398 (2011), 183

Titanium-assisted growth of silica nanowires: from surface-matched to free-standing morphologies
G. Callsen,  J. S. Reparaz, M. R. Wagner,A. Vierck, M. R. Phillips, C. Thomsen, A. Hoffmann
Nanotechnology 22 (2011), 035313


Comment on ”Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN” [ Phys. Status Solidi A 205, 1872 (208)]
W. Gehlhoff, B. Salmeh, and A. Hoffmann
Phys. Status Solidi A 208 (2011), 1953

paper (PDF, 1,3 MB)

Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers
M. R. Wagner, G. Callsen, J. S. Reparaz,  J.-H. Schulze, R. Kirste, M.  Cobet, I. A. Ostapenko, S. Rodt, C. Nenstiel, M. Kaiser, A. Hoffmann, A. V. Rodina, M. R. Phillips, S. Lautenschläger, S. Eisermann, B. K. Meyer
Phys. Rev. B 84 (2011), 035313
paper (PDF, 2,0 MB)


Decay dynamics of excitonic polarons in InAs/GaAs quantum dots
S. Werner, J. S. Reparaz, M. R. Wagner, P. Zimmer, N. N. Ledentsov, J.  Kabuss,
M.R. Dachner, M. Richter,   A. Knorr, C. Thomsen, A. Hoffmann
J. Appl. Phys. 110  (2011), 074303
paper (PDF, 1,4 MB)


Acoustic and optical phonon scattering in a single In(Ga)As quantum dot
Erik Stock, Matthias-Rene Dachner, Till Warming, Andrei Schliwa, Anatol Lochmann, Axel Hoffmann, Aleksandr I. Toropov, Askhat K. Kakarov, Ilya A. Derebzov, Marten Richter, Vladimir A. Haisler, Andreas Knorr, Dieter Bimberg,
Phys. Rev. B 83 (2011), 041304(R)
paper (PDF, 263,3 KB)

Anti-phase domains in Cubic GaN
Ricarda Maria Kemper, Thorston Schupp, Maik Häberlen, Thomas Niendorf,
Hans-Jürgen Maier, Anja Dempewolf, Frank Bertram, Jürgen Christen, Ronny Kirste, Axel Hoffmann, Jörg Lindner, Donat Josef As
J. Appl. Phys. 110, 123512 (2011)

Determination of phonon deformation potentials in wurtzite GaN and ZnO by uniaxial pressure dependent Raman measurements
G. Callsen, J. S. Reparaz, M. R. Wagner, R. Kirste, C. Nenstiel, A. Hoffmann, and M. R. Phillips
Appl. Phys. Lett. 98 (2011), 061906
paper (PDF, 574,0 KB)


Assembly of carbon nanotubes and alkylated-fullerenes: nanocarbon-hybrid towards photovoltaic applications
Yanfei Shen, Juan Sebastian Reparaz, Markus R. Wagner, Axel Hoffmann, Christian Thomsen, Yeong O. Lee, Sebastian Heeg, Benjamin Hatting, Stephanie Reich, Sukumaran Santosh Babu, Helmuth Möhwald, Takashi Nakanishi
Chemical Science 2 (2011), 2243
paper (PDF, 377,0 KB)

Raman and photoluminescence spectroscopic detection of surface-bound Li+O2- defect sites in Li-doped ZnO nanocrystals derived from molecular precursors
Ronny  Kirste,  Yilmaz  Aksu, Markus  R.  Wagner, Sevak Khachadorian, Surajit Jana, Matthias Driess, Christian Thomsen, Axel Hoffmann
Chem. Phys. Chem. 12 (2011), 1189

Shape anisotropy influencing functional properties: trigonal prismatic ZnO nanoparticals as an example
Carlos Lizandara Pueyo, Stephan Siroky, Markus R. Wagner, Axel Hoffmann, Juan S. Reparaz, Michael Lehmann, Sebastian Polarz
Advance Functional Materials 21 (2011), 295

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